David B. Spratt

Person

Plano, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a high gain bipolar junction transistor wit...
- Patent number 6,548,337
- Issue date Apr 15, 2003
- Instruments Incorporated
- Chi-Cheong Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
On-chip ESD protection in dual voltage CMOS
- Patent number 6,143,594
- Issue date Nov 7, 2000
- Texas Instruments Incorporated
- Alwin J. Tsao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
On-chip ESD protection in dual voltage CMOS
- Patent number 6,137,144
- Issue date Oct 24, 2000
- Texas Instruments Incorporated
- Alwin J. Tsao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Antifuse device for controlling current in a circuit using an antifuse
- Patent number 5,434,432
- Issue date Jul 18, 1995
- Texas Instruments Incorporated
- David B. Spratt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a recessed contact bipolar transistor
- Patent number 5,316,957
- Issue date May 31, 1994
- Texas Instruments Incorporated
- David B. Spratt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for controlling current in a circuit
- Patent number 5,284,788
- Issue date Feb 8, 1994
- Texas Instruments Incorporated
- David B. Spratt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a recessed contact bipolar transistor and field e...
- Patent number 5,075,241
- Issue date Dec 24, 1991
- Texas Instruments Incorporated
- David B. Spratt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor fabrication utilizing CMOS techniques
- Patent number 5,065,209
- Issue date Nov 12, 1991
- Texas Instruments Incorporated
- David Spratt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming protective barrier on silicided regions
- Patent number 5,041,394
- Issue date Aug 20, 1991
- Texas Instruments Incorporated
- David B. Spratt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a horizontal self-aligned transistor
- Patent number 5,019,525
- Issue date May 28, 1991
- Texas Instruments Incorporated
- Robert L. Virkus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a recessed contact bipolar transistor and field...
- Patent number 4,985,744
- Issue date Jan 15, 1991
- Texas Instruments Incorporated
- David B. Spratt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anodizable strain layer for SOI semiconductor structures
- Patent number 4,982,263
- Issue date Jan 1, 1991
- Texas Instruments Incorporated
- David B. Spratt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor fabrication utilizing CMOS techniques
- Patent number 4,962,053
- Issue date Oct 9, 1990
- Texas Instruments Incorporated
- David Spratt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed contact bipolar transistor and method
- Patent number 4,897,703
- Issue date Jan 30, 1990
- Texas Instruments Incorporated
- David B. Spratt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal structure thin film transistor
- Patent number 4,897,698
- Issue date Jan 30, 1990
- Texas Instruments Incorporated
- Eldon J. Zorinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anadization system with remote voltage sensing and active feedback...
- Patent number 4,891,103
- Issue date Jan 2, 1990
- Texas Instruments Incorporated
- Eldon J. Zorinsky
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Anodizable strain layer for SOI semiconductor structures
- Patent number 4,849,370
- Issue date Jul 18, 1989
- Texas Instruments Incorporated
- David B. Spratt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric isolation using isolated silicon by limited anodization...
- Patent number 4,810,667
- Issue date Mar 7, 1989
- Texas Instruments Incorporated
- Eldon J. Zorinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for obtaining full oxide isolation of epitaxial islands in s...
- Patent number 4,628,591
- Issue date Dec 16, 1986
- Texas Instruments Incorporated
- Eldon J. Zorinsky
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
High gain bipolar junction transistor with counterdoped base in CMO...
- Publication number 20020058373
- Publication date May 16, 2002
- Chi-Cheong Shen
- H01 - BASIC ELECTRIC ELEMENTS

David B. Spratt

Person

Patents Grantslast 30 patents

Method of manufacturing a high gain bipolar junction transistor wit...

On-chip ESD protection in dual voltage CMOS

On-chip ESD protection in dual voltage CMOS

Antifuse device for controlling current in a circuit using an antifuse

Method of forming a recessed contact bipolar transistor

Method and device for controlling current in a circuit

Method of forming a recessed contact bipolar transistor and field e...

Bipolar transistor fabrication utilizing CMOS techniques

Method for forming protective barrier on silicided regions

Method for forming a horizontal self-aligned transistor

Method for forming a recessed contact bipolar transistor and field...

Anodizable strain layer for SOI semiconductor structures

Bipolar transistor fabrication utilizing CMOS techniques

Recessed contact bipolar transistor and method

Horizontal structure thin film transistor

Anadization system with remote voltage sensing and active feedback...

Anodizable strain layer for SOI semiconductor structures

Dielectric isolation using isolated silicon by limited anodization...

Method for obtaining full oxide isolation of epitaxial islands in s...

Patents Applicationslast 30 patents

High gain bipolar junction transistor with counterdoped base in CMO...