Davide Chiola

Person

Marina del Rey, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Merged P-i-N Schottky structure
- Patent number 9,865,749
- Issue date Jan 9, 2018
- Siliconix Technology C.V.
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench schottky barrier diode with differential oxide thickness
- Patent number 8,143,655
- Issue date Mar 27, 2012
- International Rectifier Corporation
- Davide Chiola
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Thick field oxide termination for trench schottky device
- Patent number 7,973,381
- Issue date Jul 5, 2011
- International Rectifier Corporation
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Merged P-i-N Schottky structure
- Patent number 7,858,456
- Issue date Dec 28, 2010
- Siliconix Technology C.V.
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming thick oxides on Si or SiC for semiconductor dev...
- Patent number 7,754,550
- Issue date Jul 13, 2010
- International Rectifier Corporation
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench IGBT for highly capacitive loads
- Patent number 7,655,977
- Issue date Feb 2, 2010
- International Rectifier Corporation
- Chiu Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated fet and schottky device
- Patent number 7,510,953
- Issue date Mar 31, 2009
- International Rectifier Corporation
- Donald He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed termination for trench schottky device without junction cu...
- Patent number 7,466,005
- Issue date Dec 16, 2008
- International Rectifier Corporation
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench Schottky barrier diode with differential oxide thickness
- Patent number 7,323,402
- Issue date Jan 29, 2008
- International Rectifier Corporation
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination design with multiple spiral trench rings
- Patent number 7,196,397
- Issue date Mar 27, 2007
- International Rectifier Corporation
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fast recovery diode with a single large area p/n junction
- Patent number 7,091,572
- Issue date Aug 15, 2006
- International Rectifier Corporation
- Kohji Andoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Merged P-i-N schottky structure
- Patent number 7,071,525
- Issue date Jul 4, 2006
- International Rectifier Corporation
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for preparation of semiconductor wafer surface
- Patent number 6,991,943
- Issue date Jan 31, 2006
- International Rectifier Corporation
- Kohji Andoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated FET and schottky device
- Patent number 6,987,305
- Issue date Jan 17, 2006
- International Rectifier Corporation
- Donald He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky with thick trench bottom and termination oxide and process...
- Patent number 6,977,208
- Issue date Dec 20, 2005
- International Rectifier Corporation
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Temperature-sensing diode
- Patent number 6,930,371
- Issue date Aug 16, 2005
- International Rectifier Corporation
- Fabio Necco
- G01 - MEASURING TESTING
Information Patent Grant
Process for forming fast recovery diode with a single large area P/...
- Patent number 6,927,141
- Issue date Aug 9, 2005
- International Rectifier Corporation
- Kohji Andoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench Schottky barrier diode
- Patent number 6,855,593
- Issue date Feb 15, 2005
- International Rectifier Corporation
- Kohji Andoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for counter doping N-type silicon in Schottky device Ti sil...
- Patent number 6,846,729
- Issue date Jan 25, 2005
- International Rectifier Corporation
- Kohji Andoh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Trench Schottky barrier diode with differential oxide thickness
- Publication number 20080087896
- Publication date Apr 17, 2008
- International Rectifier Corporation
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench IGBT for highly capacitive loads
- Publication number 20070085148
- Publication date Apr 19, 2007
- International Rectifier Corp.
- Chiu Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Merged P-i-N Schottky structure
- Publication number 20060189107
- Publication date Aug 24, 2006
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated pet and schottky device
- Publication number 20060035422
- Publication date Feb 16, 2006
- International Rectifier Corporation
- Donald He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fast recovery diode with a single large area P/N junction
- Publication number 20060017130
- Publication date Jan 26, 2006
- International Rectifier Corporation
- Kohji Andoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Termination design with multiple spiral trench rings
- Publication number 20050230777
- Publication date Oct 20, 2005
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Recessed termination for trench schottky device without junction cu...
- Publication number 20050202637
- Publication date Sep 15, 2005
- International Rectifier Corp.
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Merged P-i-N schottky structure
- Publication number 20050161759
- Publication date Jul 28, 2005
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky with thick trench bottom and termination oxide and process...
- Publication number 20050161758
- Publication date Jul 28, 2005
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench schottky barrier diode with differential oxide thickness
- Publication number 20050127465
- Publication date Jun 16, 2005
- International Rectifier Corporation
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for preparation of semiconductor wafer surface
- Publication number 20050124085
- Publication date Jun 9, 2005
- International Rectifier Corporation
- Kohji Andoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thick field oxide termination for trench schottky device and proces...
- Publication number 20050062124
- Publication date Mar 24, 2005
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated fet and schottky device
- Publication number 20050029585
- Publication date Feb 10, 2005
- Donald He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for forming thick oxides on Si or SiC for semiconductor dev...
- Publication number 20050009255
- Publication date Jan 13, 2005
- International Rectifier Corp.
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Temperature-sensing diode
- Publication number 20040222430
- Publication date Nov 11, 2004
- International Rectifier Corporation
- Fabio Necco
- G01 - MEASURING TESTING
Information Patent Application
Process for forming fast recovery diode with a single large area P/...
- Publication number 20040077305
- Publication date Apr 22, 2004
- International Rectifier Corporation
- Kohji Andoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench schottky barrier diode
- Publication number 20040007723
- Publication date Jan 15, 2004
- International Rectifier Corp.
- Kohji Andoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for counter doping N-type silicon in Schottky device with T...
- Publication number 20030062585
- Publication date Apr 3, 2003
- International Rectifier Corp.
- Kohji Andoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low cost fast recovery diode and process of its manufacture
- Publication number 20020195613
- Publication date Dec 26, 2002
- International Rectifier Corp.
- Kohji Andoh
- H01 - BASIC ELECTRIC ELEMENTS

Davide Chiola

Person

Patents Grantslast 30 patents

Merged P-i-N Schottky structure

Trench schottky barrier diode with differential oxide thickness

Thick field oxide termination for trench schottky device

Merged P-i-N Schottky structure

Process for forming thick oxides on Si or SiC for semiconductor dev...

Trench IGBT for highly capacitive loads

Integrated fet and schottky device

Recessed termination for trench schottky device without junction cu...

Trench Schottky barrier diode with differential oxide thickness

Termination design with multiple spiral trench rings

Fast recovery diode with a single large area p/n junction

Merged P-i-N schottky structure

Process for preparation of semiconductor wafer surface

Integrated FET and schottky device

Schottky with thick trench bottom and termination oxide and process...

Temperature-sensing diode

Process for forming fast recovery diode with a single large area P/...

Trench Schottky barrier diode

Process for counter doping N-type silicon in Schottky device Ti sil...

Patents Applicationslast 30 patents

Trench Schottky barrier diode with differential oxide thickness

Trench IGBT for highly capacitive loads

Merged P-i-N Schottky structure

Integrated pet and schottky device

Fast recovery diode with a single large area P/N junction

Termination design with multiple spiral trench rings

Recessed termination for trench schottky device without junction cu...

Merged P-i-N schottky structure

Schottky with thick trench bottom and termination oxide and process...

Trench schottky barrier diode with differential oxide thickness

Process for preparation of semiconductor wafer surface

Thick field oxide termination for trench schottky device and proces...

Integrated fet and schottky device

Process for forming thick oxides on Si or SiC for semiconductor dev...

Temperature-sensing diode

Process for forming fast recovery diode with a single large area P/...

Trench schottky barrier diode

Process for counter doping N-type silicon in Schottky device with T...

Low cost fast recovery diode and process of its manufacture