Dim-Lee Kwong

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Schottky barrier source/drain n-mosfet using ytterbium silicide
- Patent number 7,504,328
- Issue date Mar 17, 2009
- National University of Singapore
- Shiyang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultrathin high-K gate dielectric with favorable interface propertie...
- Patent number 6,911,707
- Issue date Jun 28, 2005
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High charge storage density integrated circuit capacitor
- Patent number 6,468,856
- Issue date Oct 22, 2002
- Texas Instruments Incorporated
- Robert M. Wallace
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon oxynitride film
- Patent number 6,303,520
- Issue date Oct 16, 2001
- Mattson Technology, Inc.
- Dim-Lee Kwong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device and method of making the same using chemi...
- Patent number 6,284,586
- Issue date Sep 4, 2001
- LSI Logic Corporation
- John J. Seliskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS transistor design for shared N+/P+ electrode w...
- Patent number 6,252,283
- Issue date Jun 26, 2001
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming ultra thin gate dielectric for high performance s...
- Patent number 6,245,652
- Issue date Jun 12, 2001
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra thin oxynitride and nitride/oxide stacked gate dielectrics fa...
- Patent number 6,228,779
- Issue date May 8, 2001
- Novellus Systems, Inc.
- John A. Bloom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having metal gate electrode and titanium or ta...
- Patent number 6,225,168
- Issue date May 1, 2001
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor topography employing a nitrogenated shallow trench is...
- Patent number 6,218,720
- Issue date Apr 17, 2001
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable dielectric constant oxide and method of manufacture
- Patent number 6,211,096
- Issue date Apr 3, 2001
- LSI Logic Corporation
- Derryl D. J. Allman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High K integration of gate dielectric with integrated spacer format...
- Patent number 6,207,995
- Issue date Mar 27, 2001
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device having a capacitor with the dielectric pe...
- Patent number 6,115,233
- Issue date Sep 5, 2000
- LSI Logic Corporation
- John J. Seliskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making gate dielectric for sub-half micron MOS transistor...
- Patent number 6,015,739
- Issue date Jan 18, 2000
- Advanced Micro Devices
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming metal silicide on a semiconductor surface with m...
- Patent number 5,679,585
- Issue date Oct 21, 1997
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming high pressure silicon oxynitride gate dielectrics
- Patent number 5,674,788
- Issue date Oct 7, 1997
- Advanced Micro Devices, Inc.
- Dirk J. Wristers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for achieving a highly reliable oxide film
- Patent number 5,591,681
- Issue date Jan 7, 1997
- Advanced Micro Devices, Inc.
- Dirk J. Wristers
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Ultra thin dielectric for electronic devices and method of making same
- Patent number 5,578,848
- Issue date Nov 26, 1996
- Regents of the University of Texas System
- Dim-Lee Kwong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor having improved oxynitride dielectric
- Patent number 5,541,436
- Issue date Jul 30, 1996
- The Regents of the University of Texas System
- Dim-Lee Kwong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making an ultra thin dielectric for electronic devices
- Patent number 5,478,765
- Issue date Dec 26, 1995
- Regents of the University of Texas System
- Dim-Lee Kwong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making MOS transistor having improved oxynitride dielectric
- Patent number 5,397,720
- Issue date Mar 14, 1995
- The Regents of the University of Texas System
- Dim-Lee Kwong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a bipolar transistor using doped SOG
- Patent number 5,340,752
- Issue date Aug 23, 1994
- NCR Corporation
- Derryl D. J. Allman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a shallow junction by using first and second SOG l...
- Patent number 5,340,770
- Issue date Aug 23, 1994
- NCR Corporation
- Derryl D. J. Allman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming epitaxial silicon on insulator structures using...
- Patent number 4,910,165
- Issue date Mar 20, 1990
- NCR Corporation
- Steven S. Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Schottky barrier source/drain N-MOSFET using ytterbium silicide
- Publication number 20090179281
- Publication date Jul 16, 2009
- Shiyang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky barrier source/drain N-MOSFET using ytterbium silicide
- Publication number 20090163005
- Publication date Jun 25, 2009
- National University of Singapore
- Shiyang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE ELECTRODE FOR SEMICONDUCTOR DEVICES
- Publication number 20080224236
- Publication date Sep 18, 2008
- National University of Singapore
- Chi Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Photodetector
- Publication number 20060260676
- Publication date Nov 23, 2006
- Fei Gao
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Metal gate electrode for semiconductor devices
- Publication number 20050285208
- Publication date Dec 29, 2005
- Chi Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky barrier source/drain N-MOSFET using ytterbium silicide
- Publication number 20050275033
- Publication date Dec 15, 2005
- Shiyang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thermal robust semiconductor device using HfN as metal gate electro...
- Publication number 20050205947
- Publication date Sep 22, 2005
- National University of Singapore
- Hong Yu Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRATHIN HIGH-K GATE DIELECTRIC WITH FAVORABLE INTERFACE PROPERTIE...
- Publication number 20030057432
- Publication date Mar 27, 2003
- MARK I. GARDNER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High charge storage density integrated circuit capacitor
- Publication number 20010024853
- Publication date Sep 27, 2001
- Robert M. Wallace
- H01 - BASIC ELECTRIC ELEMENTS

Dim-Lee Kwong

Person

Patents Grantslast 30 patents

Schottky barrier source/drain n-mosfet using ytterbium silicide

Ultrathin high-K gate dielectric with favorable interface propertie...

High charge storage density integrated circuit capacitor

Silicon oxynitride film

Integrated circuit device and method of making the same using chemi...

CMOS transistor design for shared N&#x0002B;/P&#x0002B; electrode w...

Method of forming ultra thin gate dielectric for high performance s...

Ultra thin oxynitride and nitride/oxide stacked gate dielectrics fa...

Semiconductor device having metal gate electrode and titanium or ta...

Semiconductor topography employing a nitrogenated shallow trench is...

Tunable dielectric constant oxide and method of manufacture

High K integration of gate dielectric with integrated spacer format...

Integrated circuit device having a capacitor with the dielectric pe...

Method of making gate dielectric for sub-half micron MOS transistor...

Method for forming metal silicide on a semiconductor surface with m...

Method of forming high pressure silicon oxynitride gate dielectrics

Method for achieving a highly reliable oxide film

Ultra thin dielectric for electronic devices and method of making same

MOS transistor having improved oxynitride dielectric

Method of making an ultra thin dielectric for electronic devices

Method of making MOS transistor having improved oxynitride dielectric

Method for forming a bipolar transistor using doped SOG

Method of making a shallow junction by using first and second SOG l...

Method for forming epitaxial silicon on insulator structures using...

Patents Applicationslast 30 patents

Schottky barrier source/drain N-MOSFET using ytterbium silicide

Schottky barrier source/drain N-MOSFET using ytterbium silicide

METAL GATE ELECTRODE FOR SEMICONDUCTOR DEVICES

Photodetector

Metal gate electrode for semiconductor devices

Schottky barrier source/drain N-MOSFET using ytterbium silicide

Thermal robust semiconductor device using HfN as metal gate electro...

ULTRATHIN HIGH-K GATE DIELECTRIC WITH FAVORABLE INTERFACE PROPERTIE...

High charge storage density integrated circuit capacitor

CMOS transistor design for shared N+/P+ electrode w...