Erwin Hammerl

Person

Emerting, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Method of controllably forming a LOCOS oxide layer over a portion o...
- Patent number 6,153,474
- Issue date Nov 28, 2000
- International Business Machines Corporation
- Herbert Lei Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation (STI) with bilayer of oxide-nitride for VL...
- Patent number 6,140,208
- Issue date Oct 31, 2000
- International Business Machines Corporation
- Farid Agahi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation with oxide-nitride/oxynitride liner
- Patent number 6,046,487
- Issue date Apr 4, 2000
- International Business Machines Corporation
- John Preston Benedict
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional device layout with sub-groundrule features
- Patent number 5,893,735
- Issue date Apr 13, 1999
- Siemens Aktiengesellschaft
- Reinhard J. Stengl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional device layout having a trench capacitor
- Patent number 5,792,685
- Issue date Aug 11, 1998
- Siemens Aktiengesellschaft
- Erwin Hammerl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation with oxide-nitride/oxynitride liner
- Patent number 5,763,315
- Issue date Jun 9, 1998
- International Business Machines Corporation
- John Preston Benedict
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming deep trench DRAMs with sub-groundrule gates
- Patent number 5,674,769
- Issue date Oct 7, 1997
- Siemens Aktiengesellschaft
- Johann Alsmeier
- H01 - BASIC ELECTRIC ELEMENTS

Erwin Hammerl

Person

Patents Grantslast 30 patents

Method of controllably forming a LOCOS oxide layer over a portion o...

Shallow trench isolation (STI) with bilayer of oxide-nitride for VL...

Shallow trench isolation with oxide-nitride/oxynitride liner

Three-dimensional device layout with sub-groundrule features

Three-dimensional device layout having a trench capacitor

Shallow trench isolation with oxide-nitride/oxynitride liner

Process for forming deep trench DRAMs with sub-groundrule gates