Feng Zhang

Person

Hillsboro, OR, US

People

Patents Applicationslast 30 patents

Information Patent Application
METAL-ALL-AROUND CONTACT STRUCTURE COUPLED WITH A SOURCE OR DRAIN R...
- Publication number 20250212463
- Publication date Jun 26, 2025
- Intel Corporation
- Robin Chao
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH BACKSIDE ISOLATON REGION
- Publication number 20250212470
- Publication date Jun 26, 2025
- Intel Corporation
- Feng Zhang
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH SEMICONDUCTOR STRUCTURE EXTENDING AC...
- Publication number 20250203975
- Publication date Jun 19, 2025
- Guowei Xu
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH CO-METALIZED ELECTRICAL CONTACT
- Publication number 20250204000
- Publication date Jun 19, 2025
- Intel Corporation
- Kan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH DIELECTRIC CUT AT N-P BOUNDARY
- Publication number 20250204035
- Publication date Jun 19, 2025
- Intel Corporation
- Yang Zhang
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH BACKSIDE CONTACTS AND ASYMMETRIC...
- Publication number 20250194179
- Publication date Jun 12, 2025
- Tao Chu
Information Patent Application
CONDUCTIVE VIA WITH FRONT-SIDE AND BACK-SIDE CONNECTIONS WITH A SOU...
- Publication number 20250194211
- Publication date Jun 12, 2025
- Intel Corporation
- Ting-Hsiang Hung
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH TRANSISTOR GATE-CHANNEL ARRANGEM...
- Publication number 20250194070
- Publication date Jun 12, 2025
- Tao Chu
Information Patent Application
BACK-SIDE NANORIBBON REMOVAL
- Publication number 20250176255
- Publication date May 29, 2025
- Intel Corporation
- Chiao-Ti Huang
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH DIFFERENT NANORIBBON THICKNESSES
- Publication number 20250169130
- Publication date May 22, 2025
- Intel Corporation
- Tao Chu
Information Patent Application
INTEGRATED CIRCUIT DEVICES WITH SELF-ALIGNED VIA-TO-JUMPER CONNECTIONS
- Publication number 20250142948
- Publication date May 1, 2025
- Intel Corporation
- Robin Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES WITH BACKSIDE SEMICONDUCTOR STRUCTURES
- Publication number 20250140649
- Publication date May 1, 2025
- Intel Corporation
- Feng Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE WITH DEEP VIA BAR WIDTH TUNING
- Publication number 20250112120
- Publication date Apr 3, 2025
- Intel Corporation
- Tao CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH INTERNAL SPACERS FOR 2D CHANNEL...
- Publication number 20250113547
- Publication date Apr 3, 2025
- Intel Corporation
- Chia-Ching LIN
Information Patent Application
MULTIPLE VOLTAGE THRESHOLD INTEGRATED CIRCUIT STRUCTURE WITH LOCAL...
- Publication number 20250113595
- Publication date Apr 3, 2025
- Intel Corporation
- Tao CHU
Information Patent Application
TRENCH CONTACT STRUCTURE WITH ETCH-STOP LAYER
- Publication number 20250113559
- Publication date Apr 3, 2025
- Intel Corporation
- Guowei XU
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING REDUCED LOCAL LAYOUT EFFECTS
- Publication number 20250107175
- Publication date Mar 27, 2025
- Intel Corporation
- Tao CHU
Information Patent Application
DIELECTRIC ISOLATION BETWEEN EPITAXIAL REGIONS AND SUBFIN REGIONS
- Publication number 20250107156
- Publication date Mar 27, 2025
- Intel Corporation
- Chiao-Ti Huang
Information Patent Application
AIRGAP SPACER BETWEEN GATE ELECTRODE AND SOURCE OR DRAIN CONTACT
- Publication number 20250107212
- Publication date Mar 27, 2025
- Intel Corporation
- Yang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VIA STRUCTURE WITH IMPROVED SUBSTRATE GROUNDING
- Publication number 20250096114
- Publication date Mar 20, 2025
- Intel Corporation
- Robin Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH PATCH SPACERS
- Publication number 20250098260
- Publication date Mar 20, 2025
- Intel Corporation
- Guowei XU
Information Patent Application
LATERAL ETCHING PROCESS TO REMOVE METAL GATE FOOT STRUCTURES
- Publication number 20250087530
- Publication date Mar 13, 2025
- Intel Corporation
- Chiao-Ti Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH-GATE STRUCTURE WITH AN AIRGAP SPACER IN A SEMICONDUCTOR DEVICE
- Publication number 20250089310
- Publication date Mar 13, 2025
- Intel Corporation
- Ting-Hsiang Hung
Information Patent Application
PERFORMANCE OPTIMIZATION OF TRANSISTORS SHARING CHANNEL STRUCTURES...
- Publication number 20250006734
- Publication date Jan 2, 2025
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ROUNDED NANORIBBONS WITH REGROWN CAPS
- Publication number 20240321962
- Publication date Sep 26, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH REDUCED N-P BOUNDARY EFFECT
- Publication number 20240321887
- Publication date Sep 26, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH PERFORMANCE-ENHANCING LAYOUT
- Publication number 20240321859
- Publication date Sep 26, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LONG CHANNEL FIN TRANSISTORS IN NANORIBBON-BASED DEVICES
- Publication number 20240321987
- Publication date Sep 26, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH BACKSIDE FIN TRIM ISOLATION
- Publication number 20240304619
- Publication date Sep 12, 2024
- Guowei Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF NANORIBBON-BASED TRANSISTORS USING PATTERNED FOUNDATION
- Publication number 20240304621
- Publication date Sep 12, 2024
- Intel Corporation
- Chiao-Ti Huang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Applicationslast 30 patents

METAL-ALL-AROUND CONTACT STRUCTURE COUPLED WITH A SOURCE OR DRAIN R...

INTEGRATED CIRCUIT DEVICE WITH BACKSIDE ISOLATON REGION

INTEGRATED CIRCUIT DEVICE WITH SEMICONDUCTOR STRUCTURE EXTENDING AC...

INTEGRATED CIRCUIT DEVICE WITH CO-METALIZED ELECTRICAL CONTACT

INTEGRATED CIRCUIT DEVICE WITH DIELECTRIC CUT AT N-P BOUNDARY

INTEGRATED CIRCUIT STRUCTURES WITH BACKSIDE CONTACTS AND ASYMMETRIC...

CONDUCTIVE VIA WITH FRONT-SIDE AND BACK-SIDE CONNECTIONS WITH A SOU...

INTEGRATED CIRCUIT STRUCTURES WITH TRANSISTOR GATE-CHANNEL ARRANGEM...

BACK-SIDE NANORIBBON REMOVAL

INTEGRATED CIRCUIT STRUCTURES WITH DIFFERENT NANORIBBON THICKNESSES

INTEGRATED CIRCUIT DEVICES WITH SELF-ALIGNED VIA-TO-JUMPER CONNECTIONS

INTEGRATED CIRCUIT DEVICES WITH BACKSIDE SEMICONDUCTOR STRUCTURES

INTEGRATED CIRCUIT STRUCTURE WITH DEEP VIA BAR WIDTH TUNING

INTEGRATED CIRCUIT STRUCTURES WITH INTERNAL SPACERS FOR 2D CHANNEL...

MULTIPLE VOLTAGE THRESHOLD INTEGRATED CIRCUIT STRUCTURE WITH LOCAL...

TRENCH CONTACT STRUCTURE WITH ETCH-STOP LAYER

INTEGRATED CIRCUIT STRUCTURES HAVING REDUCED LOCAL LAYOUT EFFECTS

DIELECTRIC ISOLATION BETWEEN EPITAXIAL REGIONS AND SUBFIN REGIONS

AIRGAP SPACER BETWEEN GATE ELECTRODE AND SOURCE OR DRAIN CONTACT

VIA STRUCTURE WITH IMPROVED SUBSTRATE GROUNDING

INTEGRATED CIRCUIT STRUCTURES WITH PATCH SPACERS

LATERAL ETCHING PROCESS TO REMOVE METAL GATE FOOT STRUCTURES

THROUGH-GATE STRUCTURE WITH AN AIRGAP SPACER IN A SEMICONDUCTOR DEVICE

PERFORMANCE OPTIMIZATION OF TRANSISTORS SHARING CHANNEL STRUCTURES...

ROUNDED NANORIBBONS WITH REGROWN CAPS

INTEGRATED CIRCUIT DEVICE WITH REDUCED N-P BOUNDARY EFFECT

INTEGRATED CIRCUIT DEVICE WITH PERFORMANCE-ENHANCING LAYOUT

LONG CHANNEL FIN TRANSISTORS IN NANORIBBON-BASED DEVICES

INTEGRATED CIRCUIT DEVICE WITH BACKSIDE FIN TRIM ISOLATION

FABRICATION OF NANORIBBON-BASED TRANSISTORS USING PATTERNED FOUNDATION