Frederick P. Giles

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Trench-gated MIS device having thick polysilicon insulation layer a...
- Patent number 7,494,876
- Issue date Feb 24, 2009
- Vishay Siliconix
- Frederick Perry Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned differential oxidation in trenches by ion implantation
- Patent number 7,012,005
- Issue date Mar 14, 2006
- Siliconix Incorporated
- Karl Lichtenberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making trench MIS device with reduced gate-to-drain capa...
- Patent number 6,921,697
- Issue date Jul 26, 2005
- Siliconix Incorporated
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MIS device with graduated gate oxide layer
- Patent number 6,903,412
- Issue date Jun 7, 2005
- Siliconix Incorporated
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MIS device with reduced gate-to-drain capacitance
- Patent number 6,882,000
- Issue date Apr 19, 2005
- Siliconix Incorporated
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating trench MIS device with graduated gate oxide l...
- Patent number 6,875,657
- Issue date Apr 5, 2005
- Siliconix Incorporated
- Christiana Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MIS device with active trench corners and thick bottom oxide
- Patent number 6,849,898
- Issue date Feb 1, 2005
- Siliconix Incorporated
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thicker oxide formation at the trench bottom by selective oxide dep...
- Patent number 6,709,930
- Issue date Mar 23, 2004
- Siliconix Incorporated
- Ben Chan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CMOS COMPATIBLE LOW GATE CHARGE HIGH VOLTAGE PMOS
- Publication number 20180286860
- Publication date Oct 4, 2018
- Maxim Integrated Products, Inc.
- Frederick Perry Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOSFET HAVING A BRIDGE REGION FORMED BETWEEN TWO GATE ELECTRODES
- Publication number 20150061008
- Publication date Mar 5, 2015
- Maxim Integrated Products, Inc.
- Joel M. McGregor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS COMPATIBLE LOW GATE CHARGE LATERAL MOSFET
- Publication number 20110115019
- Publication date May 19, 2011
- MAXIM INTEGRATED PRODUCTS, INC.
- Frederick Perry Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned differential oxidation in trenches by ion implantation
- Publication number 20030235959
- Publication date Dec 25, 2003
- Siliconix Incorporated
- Karl Lichtenberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THICKER OXIDE FORMATION AT THE TRENCH BOTTOM BY SELECTIVE OXIDE DEP...
- Publication number 20030235958
- Publication date Dec 25, 2003
- Siliconix Incorporated
- Ben Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for making trench MIS device with reduced gate-to-drain capa...
- Publication number 20030062570
- Publication date Apr 3, 2003
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench MIS device with graduated gate oxide layer
- Publication number 20030030104
- Publication date Feb 13, 2003
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating trench MIS device with graduated gate oxide l...
- Publication number 20030032248
- Publication date Feb 13, 2003
- Christiana Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench MIS device with reduced gate-to-drain capacitance
- Publication number 20030030092
- Publication date Feb 13, 2003
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench MIS device with active trench corners and thick bottom oxide...
- Publication number 20030032247
- Publication date Feb 13, 2003
- Siliconix inorporated
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS

Frederick P. Giles

Person

Patents Grantslast 30 patents

Trench-gated MIS device having thick polysilicon insulation layer a...

Self-aligned differential oxidation in trenches by ion implantation

Method for making trench MIS device with reduced gate-to-drain capa...

Trench MIS device with graduated gate oxide layer

Trench MIS device with reduced gate-to-drain capacitance

Method of fabricating trench MIS device with graduated gate oxide l...

Trench MIS device with active trench corners and thick bottom oxide

Thicker oxide formation at the trench bottom by selective oxide dep...

Patents Applicationslast 30 patents

CMOS COMPATIBLE LOW GATE CHARGE HIGH VOLTAGE PMOS

LDMOSFET HAVING A BRIDGE REGION FORMED BETWEEN TWO GATE ELECTRODES

CMOS COMPATIBLE LOW GATE CHARGE LATERAL MOSFET

Self-aligned differential oxidation in trenches by ion implantation

THICKER OXIDE FORMATION AT THE TRENCH BOTTOM BY SELECTIVE OXIDE DEP...

Method for making trench MIS device with reduced gate-to-drain capa...

Trench MIS device with graduated gate oxide layer

Method of fabricating trench MIS device with graduated gate oxide l...

Trench MIS device with reduced gate-to-drain capacitance

Trench MIS device with active trench corners and thick bottom oxide...