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Gang Bai
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San Jose, CA, US
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Patents Grants
last 30 patents
Information
Patent Grant
Multi-layer gate dielectric
Patent number
9,412,860
Issue date
Aug 9, 2016
Intel Corporation
Gang Bai
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Multi-layer gate dielectric
Patent number
8,581,353
Issue date
Nov 12, 2013
Intel Corporation
Gang Bai
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Multi-layer gate dielectric
Patent number
8,193,593
Issue date
Jun 5, 2012
Intel Corporation
Gang Bai
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Complementary metal gate electrode technology
Patent number
7,187,044
Issue date
Mar 6, 2007
Intel Corporation
Chunlin Liang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
High dielectric constant metal oxide gate dielectrics
Patent number
6,998,357
Issue date
Feb 14, 2006
Intel Corporation
Gang Bai
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of making MOSFET gate electrodes with tuned work function
Patent number
6,794,232
Issue date
Sep 21, 2004
Intel Corporation
Jun-Fei Zheng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for tuning a work function for MOSFET gate electrodes
Patent number
6,790,731
Issue date
Sep 14, 2004
Intel Corporation
Jun-Fei Zheng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Transistor structure having silicide source/drain extensions
Patent number
6,737,710
Issue date
May 18, 2004
Intel Corporation
Peng Cheng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
High dielectric constant metal oxide gate dielectrics
Patent number
6,689,702
Issue date
Feb 10, 2004
Intel Corporation
Gang Bai
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device
Patent number
6,534,837
Issue date
Mar 18, 2003
Intel Corporation
Gang Bai
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
High dielectric constant metal oxide gate dielectrics
Patent number
6,528,856
Issue date
Mar 4, 2003
Intel Corporation
Gang Bai
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Complementary metal gates and a process for implementation
Patent number
6,492,217
Issue date
Dec 10, 2002
Intel Corporation
Gang Bai
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Work function tuning for MOSFET gate electrodes
Patent number
6,373,111
Issue date
Apr 16, 2002
Intel Corporation
Jun-Fei Zheng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Unlanded vias with a low dielectric constant material as an intrali...
Patent number
6,365,971
Issue date
Apr 2, 2002
Intel Corporation
Gang Bai
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for making a complementary metal gate electrode technology
Patent number
6,265,258
Issue date
Jul 24, 2001
Intel Corporation
Chunlin Liang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Process to make complementary silicide metal gates for CMOS technology
Patent number
6,204,103
Issue date
Mar 20, 2001
Intel Corporation
Gang Bai
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Complementary metal gates and a process for implementation
Patent number
6,166,417
Issue date
Dec 26, 2000
Intel Corporation
Gang Bai
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for making a complementary metal gate electrode technology
Patent number
6,130,123
Issue date
Oct 10, 2000
Intel Corporation
Chunlin Liang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Low resistance gate electrode layer and method of making same
Patent number
6,025,254
Issue date
Feb 15, 2000
Intel Corporation
Brian Doyle
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Diffusion barrier for electrical interconnects in an integrated cir...
Patent number
5,977,634
Issue date
Nov 2, 1999
Intel Corporation
Gang Bai
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method to fabricate unlanded vias with a low dielectric constant ma...
Patent number
5,960,316
Issue date
Sep 28, 1999
Intel Corporation
Gang Bai
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Silicide for achieving low sheet resistance on poly-Si and low Si c...
Patent number
5,889,331
Issue date
Mar 30, 1999
Intel Corporation
Gang Bai
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of forming a polycide film
Patent number
5,861,340
Issue date
Jan 19, 1999
Intel Corporation
Gang Bai
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Polycide film
Patent number
5,818,092
Issue date
Oct 6, 1998
Intel Corporation
Gang Bai
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Diffusion barrier for electrical interconnects in an integrated cir...
Patent number
5,714,418
Issue date
Feb 3, 1998
Intel Corporation
Gang Bai
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
MULTI-LAYER GATE DIELECTRIC
Publication number
20140042560
Publication date
Feb 13, 2014
GANG BAI
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
MULTI-LAYER GATE DIELECTRIC
Publication number
20110089502
Publication date
Apr 21, 2011
GANG BAI
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Multi-Layer Gate Dielectric
Publication number
20100052078
Publication date
Mar 4, 2010
GANG BAI
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
High dielectric constant metal oxide gate dielectrics
Publication number
20050087820
Publication date
Apr 28, 2005
Gang Bai
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Work function tuning for mosfet gate electrodes
Publication number
20030151074
Publication date
Aug 14, 2003
Jun-Fei Zheng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
High dielectric constant metal oxide gate dielectrics
Publication number
20030075740
Publication date
Apr 24, 2003
Gang Bai
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Work function tuning for MOSFET gate electrodes
Publication number
20020106858
Publication date
Aug 8, 2002
Jun-Fei Zheng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Complementary metal gate electrode technology
Publication number
20020096724
Publication date
Jul 25, 2002
Chunlin Liang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
TRANSISTOR STRUCTURE HAVING SILICIDE SOURE/DRAIN EXTENSIONS
Publication number
20020086505
Publication date
Jul 4, 2002
Peng Cheng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method for making transistor structure having silicide source/drain...
Publication number
20020060346
Publication date
May 23, 2002
Peng Cheng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
MULTI-LAYER GATE DIELECTRIC
Publication number
20010013629
Publication date
Aug 16, 2001
GANG BAI
H01 - BASIC ELECTRIC ELEMENTS