Gangadhara S. Mathad

Person

Poughkeepsie, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method to achieve increased trench depth, independent of CD as defi...
- Patent number 7,144,769
- Issue date Dec 5, 2006
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for dry etching deep trenches in a substrate
- Patent number 6,821,900
- Issue date Nov 23, 2004
- Infineon Technologies AG
- Satish Athavale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to achieve increased trench depth, independent of CD as defi...
- Patent number 6,821,864
- Issue date Nov 23, 2004
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to fill deep trench structures with void-free polysilicon or...
- Patent number 6,809,005
- Issue date Oct 26, 2004
- Infineon Technologies AG
- Rajiv Ranade
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of etching high aspect ratio openings
- Patent number 6,743,727
- Issue date Jun 1, 2004
- International Business Machines Corporation
- Gangadhara S. Mathad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to increase the etch rate and depth in high aspect ratio str...
- Patent number 6,709,917
- Issue date Mar 23, 2004
- International Business Machines Corporation
- Siddhartha Panda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of deep trench formation with improved profile control and s...
- Patent number 6,544,838
- Issue date Apr 8, 2003
- Infineon Technologies AG
- Rajiv Ranade
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Elimination/reduction of black silicon in DT etch
- Patent number 6,489,249
- Issue date Dec 3, 2002
- Infineon Technologies AG
- Gangadhara S. Mathad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing RIE lag for deep trench silicon etching
- Patent number 6,284,666
- Issue date Sep 4, 2001
- International Business Machines Corporation
- Munir D. Naeem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flip-Chip interconnections using lead-free solders
- Patent number 6,224,690
- Issue date May 1, 2001
- International Business Machines Corporation
- Panayotis Constantinou Andricacos
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Etching of Ti-W for C4 rework
- Patent number 5,759,437
- Issue date Jun 2, 1998
- International Business Machines Corporation
- Madhav Datta
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Formation of self-aligned metal gate FETs using a benignant removab...
- Patent number 5,391,510
- Issue date Feb 21, 1995
- International Business Machines Corporation
- Louis L. Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming a dual overhang collimated lift-off stencil with...
- Patent number 5,258,264
- Issue date Nov 2, 1993
- International Business Machines Corporation
- Gangadhara S. Mathad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Collimated metal deposition
- Patent number 5,024,896
- Issue date Jun 18, 1991
- International Business Machines Corporation
- Gangadhara S. Mathad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anisotropic silicon etching in fluorinated plasma
- Patent number 4,741,799
- Issue date May 3, 1988
- International Business Machines Corporation
- Lee Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for control of etch profile
- Patent number 4,671,849
- Issue date Jun 9, 1987
- International Business Machines Corporation
- Lee Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a chip interposer
- Patent number 4,617,730
- Issue date Oct 21, 1986
- International Business Machines Corporation
- Pieter Geldermans
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monitoring technique for plasma etching
- Patent number 4,602,981
- Issue date Jul 29, 1986
- International Business Machines Corporation
- Lee Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single wafer plasma etch reactor
- Patent number 4,534,816
- Issue date Aug 13, 1985
- International Business Machines Corporation
- Lee Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control of etch rate ratio of SiO.sub.2 /photoresist for quartz pla...
- Patent number 4,511,430
- Issue date Apr 16, 1985
- International Business Machines Corporation
- Lee Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser induced dry chemical etching of metals
- Patent number 4,490,210
- Issue date Dec 25, 1984
- International Business Machines Corporation
- Lee Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Laser induced chemical etching of metals with excimer lasers
- Patent number 4,490,211
- Issue date Dec 25, 1984
- International Business Machines Corporation
- Lee Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Laser induced dry etching of vias in glass with non-contact masking
- Patent number 4,478,677
- Issue date Oct 23, 1984
- International Business Machines Corporation
- Lee Chen
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR

Patents Applicationslast 30 patents

Information Patent Application
Novel method to achieve increased trench depth, independent of CD a...
- Publication number 20050009295
- Publication date Jan 13, 2005
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FILL DEEP TRENCH STRUCTURES WITH VOID-FREE POLYSILICON OR...
- Publication number 20040180510
- Publication date Sep 16, 2004
- Infineon Technologies North America Corp.
- Rajiv Ranade
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel method to achieve increased trench depth, independent of CD a...
- Publication number 20030170951
- Publication date Sep 11, 2003
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of etching high aspect ratio openings
- Publication number 20020179570
- Publication date Dec 5, 2002
- International Business Machines Corporation
- Gangadhara S. Mathad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of deep trench formation with improved profile control and s...
- Publication number 20020132422
- Publication date Sep 19, 2002
- Infineon Technologies North America Corp.
- Rajiv Ranade
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for dry etching deep trenches in a substrate
- Publication number 20020094690
- Publication date Jul 18, 2002
- Satish Athavale
- H01 - BASIC ELECTRIC ELEMENTS

Gangadhara S. Mathad

Person

Patents Grantslast 30 patents

Method to achieve increased trench depth, independent of CD as defi...

Method for dry etching deep trenches in a substrate

Method to achieve increased trench depth, independent of CD as defi...

Method to fill deep trench structures with void-free polysilicon or...

Method of etching high aspect ratio openings

Method to increase the etch rate and depth in high aspect ratio str...

Method of deep trench formation with improved profile control and s...

Elimination/reduction of black silicon in DT etch

Method of reducing RIE lag for deep trench silicon etching

Flip-Chip interconnections using lead-free solders

Etching of Ti-W for C4 rework

Formation of self-aligned metal gate FETs using a benignant removab...

Process of forming a dual overhang collimated lift-off stencil with...

Collimated metal deposition

Anisotropic silicon etching in fluorinated plasma

Method for control of etch profile

Method of fabricating a chip interposer

Monitoring technique for plasma etching

Single wafer plasma etch reactor

Control of etch rate ratio of SiO.sub.2 /photoresist for quartz pla...

Laser induced dry chemical etching of metals

Laser induced chemical etching of metals with excimer lasers

Laser induced dry etching of vias in glass with non-contact masking

Patents Applicationslast 30 patents

Novel method to achieve increased trench depth, independent of CD a...

METHOD TO FILL DEEP TRENCH STRUCTURES WITH VOID-FREE POLYSILICON OR...

Novel method to achieve increased trench depth, independent of CD a...

Method of etching high aspect ratio openings

Method of deep trench formation with improved profile control and s...

Method for dry etching deep trenches in a substrate