Gert Burbach

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Temperature monitoring in a semiconductor device by using a PN junc...
- Patent number 8,796,807
- Issue date Aug 5, 2014
- Advanced Micro Devices, Inc.
- Rolf Stephan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having stressed etch stop layers of different...
- Patent number 7,732,291
- Issue date Jun 8, 2010
- GLOBALFOUNDRIES Inc.
- Joe Bloomquist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and a transistor having asymmetric spacer elements a...
- Patent number 7,354,839
- Issue date Apr 8, 2008
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for forming a strained transistor by a late amorphization...
- Patent number 7,354,836
- Issue date Apr 8, 2008
- Advanced Micro Devices, Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor structure comprising transistor e...
- Patent number 7,238,578
- Issue date Jul 3, 2007
- Advanced Micro Devices, Inc.
- Gert Burbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Simultaneous formation of device and backside contacts on wafers ha...
- Patent number 7,005,380
- Issue date Feb 28, 2006
- Advanced Micro Devices, Inc.
- Massud Aminpur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a trench isolation structure for a semicond...
- Patent number 6,943,088
- Issue date Sep 13, 2005
- Advanced Micro Devices, Inc.
- Ralf van Bentum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structure for SOI circuits
- Patent number 6,905,924
- Issue date Jun 14, 2005
- Advanced Micro Devices, Inc.
- Gert Burbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a field effect transistor and a pass...
- Patent number 6,821,840
- Issue date Nov 23, 2004
- Advanced Micro Devices, Inc.
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a substrate contact in a field effect transistor...
- Patent number 6,720,242
- Issue date Apr 13, 2004
- Advanced Micro Devices, Inc.
- Gert Burbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an improved local interconnect structur...
- Patent number 6,656,825
- Issue date Dec 2, 2003
- Advanced Micro Devices, Inc.
- Gert Burbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a reduced signal processing time and a...
- Patent number 6,541,863
- Issue date Apr 1, 2003
- Advanced Micro Devices, Inc.
- Manfred Horstmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of compensating for material loss in a metal silicone layer...
- Patent number 6,271,122
- Issue date Aug 7, 2001
- Advanced Micro Devices, Inc.
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TEMPERATURE MONITORING IN A SEMICONDUCTOR DEVICE BY USING A PN JUNC...
- Publication number 20120025276
- Publication date Feb 2, 2012
- Advanced Micro Devices, Inc.
- Rolf Stephan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEMPERATURE MONITORING IN A SEMICONDUCTOR DEVICE BY USING AN PN JUN...
- Publication number 20090218601
- Publication date Sep 3, 2009
- Rolf Stephan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A SEMICONDUCTOR DEVICE HAVING STRESSED ETCH STOP LAYERS OF DIFFEREN...
- Publication number 20070254444
- Publication date Nov 1, 2007
- Joe Bloomquist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR STRUCTURE COMPRISING TRANSISTOR E...
- Publication number 20070207583
- Publication date Sep 6, 2007
- Advanced Micro Devices, Inc.
- Gert Burbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR FORMING A STRAINED TRANSISTOR BY A LATE AMORPHIZATION...
- Publication number 20070202653
- Publication date Aug 30, 2007
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate structure and a transistor having asymmetric spacer elements a...
- Publication number 20060194381
- Publication date Aug 31, 2006
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a semiconductor structure comprising transistor e...
- Publication number 20060046400
- Publication date Mar 2, 2006
- Gert Burbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Technique for evaluating local electrical characteristics in semico...
- Publication number 20060022197
- Publication date Feb 2, 2006
- Frank Wirbeleit
- G01 - MEASURING TESTING
Information Patent Application
Method of forming local interconnect barrier layers
- Publication number 20050101120
- Publication date May 12, 2005
- Fred Hause
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI field effect transistor element having an ohmic substrate contact
- Publication number 20040217421
- Publication date Nov 4, 2004
- Massud Aminpur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode structure for SOI circuits
- Publication number 20040188768
- Publication date Sep 30, 2004
- Gert Burbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench isolation structure for a semiconductor device with a differ...
- Publication number 20040119135
- Publication date Jun 24, 2004
- Ralf van Bentum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Simultaneous formation of device and backside contacts on wafers ha...
- Publication number 20040121599
- Publication date Jun 24, 2004
- Massud Aminpur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device including a field effect transistor and a pass...
- Publication number 20040043558
- Publication date Mar 4, 2004
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING AN IMPROVED LOCAL INTERCONNECT STRUCTUR...
- Publication number 20030201490
- Publication date Oct 30, 2003
- Gert Burbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI transistor element having an improved backside contact and meth...
- Publication number 20030203546
- Publication date Oct 30, 2003
- Gert Burbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a substrate contact in a field effect transistor...
- Publication number 20020055244
- Publication date May 9, 2002
- Gert Burbach
- H01 - BASIC ELECTRIC ELEMENTS

Gert Burbach

Person

Patents Grantslast 30 patents

Temperature monitoring in a semiconductor device by using a PN junc...

Semiconductor device having stressed etch stop layers of different...

Gate structure and a transistor having asymmetric spacer elements a...

Technique for forming a strained transistor by a late amorphization...

Method of forming a semiconductor structure comprising transistor e...

Simultaneous formation of device and backside contacts on wafers ha...

Method of manufacturing a trench isolation structure for a semicond...

Diode structure for SOI circuits

Semiconductor device including a field effect transistor and a pass...

Method of forming a substrate contact in a field effect transistor...

Semiconductor device having an improved local interconnect structur...

Semiconductor device having a reduced signal processing time and a...

Method of compensating for material loss in a metal silicone layer...

Patents Applicationslast 30 patents

TEMPERATURE MONITORING IN A SEMICONDUCTOR DEVICE BY USING A PN JUNC...

TEMPERATURE MONITORING IN A SEMICONDUCTOR DEVICE BY USING AN PN JUN...

A SEMICONDUCTOR DEVICE HAVING STRESSED ETCH STOP LAYERS OF DIFFEREN...

METHOD OF FORMING A SEMICONDUCTOR STRUCTURE COMPRISING TRANSISTOR E...

TECHNIQUE FOR FORMING A STRAINED TRANSISTOR BY A LATE AMORPHIZATION...

Gate structure and a transistor having asymmetric spacer elements a...

Method of forming a semiconductor structure comprising transistor e...

Technique for evaluating local electrical characteristics in semico...

Method of forming local interconnect barrier layers

SOI field effect transistor element having an ohmic substrate contact

Diode structure for SOI circuits

Trench isolation structure for a semiconductor device with a differ...

Simultaneous formation of device and backside contacts on wafers ha...

Semiconductor device including a field effect transistor and a pass...

SEMICONDUCTOR DEVICE HAVING AN IMPROVED LOCAL INTERCONNECT STRUCTUR...

SOI transistor element having an improved backside contact and meth...

Method of forming a substrate contact in a field effect transistor...