The invention may be understood by reference to the following description taken in conjunction with the accompanying drawings, in which like reference numerals identify like elements, and in which:
a-1c schematically illustrate a conventional transistor element during various manufacturing stages in forming a strained channel region on the basis of a re-crystallization process with a stressed overlying layer resulting in a moderate strain in the channel region according to conventional techniques;
a-2e schematically illustrate cross-sectional views of a transistor element during various manufacturing stages according to illustrative embodiments of the present invention; and
f-2h schematically illustrate cross-sectional views of transistor elements of different conductivity type during various manufacturing stages in accordance with still other illustrative embodiments of the present invention.
Number | Date | Country | Kind |
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10 2006 009 272.4 | Feb 2006 | DE | national |