Gheorghe Samachisa

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
EEPROM with split gate source side injection
- Patent number 7,449,746
- Issue date Nov 11, 2008
- SanDisk Corporation
- Daniel C. Guterman
- G11 - INFORMATION STORAGE
Information Patent Grant
EEPROM with split gate source side infection with sidewall spacers
- Patent number 7,071,060
- Issue date Jul 4, 2006
- SanDisk Corporation
- Daniel C. Guterman
- G11 - INFORMATION STORAGE
Information Patent Grant
EEPROM with split gate source side injection with sidewall spacers
- Patent number 6,954,381
- Issue date Oct 11, 2005
- SanDisk Corporation
- Daniel C. Guterman
- G11 - INFORMATION STORAGE
Information Patent Grant
Eeprom with split gate source side injection
- Patent number 6,861,700
- Issue date Mar 1, 2005
- SanDisk Corporation
- Daniel C. Guterman
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-state operation of dual floating gate array
- Patent number 6,704,222
- Issue date Mar 9, 2004
- SanDisk Corporation
- Daniel C. Guterman
- G11 - INFORMATION STORAGE
Information Patent Grant
EEPROM cell array structure with specific floating gate shape
- Patent number 6,664,587
- Issue date Dec 16, 2003
- SanDisk Corporation
- Daniel C. Guterman
- G11 - INFORMATION STORAGE
Information Patent Grant
EEPROM with split gate source side injection with sidewall spacers
- Patent number 6,002,152
- Issue date Dec 14, 1999
- SanDisk Corporation
- Daniel C. Guterman
- G11 - INFORMATION STORAGE
Information Patent Grant
Dense vertical programmable read only memory cell structures and pr...
- Patent number 5,965,913
- Issue date Oct 12, 1999
- SanDisk Corporation
- Jack H. Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
EEPROM with split gate source side injection
- Patent number 5,910,925
- Issue date Jun 8, 1999
- SanDisk Corporation
- Daniel C. Guterman
- G11 - INFORMATION STORAGE
Information Patent Grant
EEPROM with split gate source side injection
- Patent number 5,910,915
- Issue date Jun 8, 1999
- SanDisk Corporation
- Daniel C. Guterman
- G11 - INFORMATION STORAGE
Information Patent Grant
EEPROM with split gate source side injection
- Patent number 5,883,409
- Issue date Mar 16, 1999
- SanDisk Corporation
- Daniel C. Guterman
- G11 - INFORMATION STORAGE
Information Patent Grant
Eeprom with split gate source side injection
- Patent number 5,847,996
- Issue date Dec 8, 1998
- SanDisk Corporation
- Daniel C. Guterman
- G11 - INFORMATION STORAGE
Information Patent Grant
Dense vertical programmable read only memory cell structures and pr...
- Patent number 5,847,425
- Issue date Dec 8, 1998
- SanDisk Corporation
- Jack H. Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming EEPROM with split gate source side injection
- Patent number 5,776,810
- Issue date Jul 7, 1998
- SanDisk Corporation
- Daniel C. Guterman
- G11 - INFORMATION STORAGE
Information Patent Grant
Dense flash EEPROM cell array and peripheral supporting circuits fo...
- Patent number 5,756,385
- Issue date May 26, 1998
- SanDisk Corporation
- Jack H. Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of patterning polysilicon layers on substrate
- Patent number 5,747,359
- Issue date May 5, 1998
- SanDisk Corporation
- Jack H. Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
EEPROM with split gate source side injection
- Patent number 5,712,180
- Issue date Jan 27, 1998
- SunDisk Corporation
- Daniel C. Guterman
- G11 - INFORMATION STORAGE
Information Patent Grant
Dense flash EEPROM cell array and peripheral supporting circuits fo...
- Patent number 5,654,217
- Issue date Aug 5, 1997
- SanDisk Corporation
- Jack H. Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique of forming over an irregular surface a polysilicon layer...
- Patent number 5,595,924
- Issue date Jan 21, 1997
- SanDisk Corporation
- Jack H. Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making dense flash EEPROM cell array and peripheral suppo...
- Patent number 5,534,456
- Issue date Jul 9, 1996
- SanDisk Corporation
- Jack H. Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making dense vertical programmable read only memory cell...
- Patent number 5,512,505
- Issue date Apr 30, 1996
- SanDisk Corporation
- Jack H. Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dense vertical programmable read only memory cell structures and pr...
- Patent number 5,380,672
- Issue date Jan 10, 1995
- SunDisk Corporation
- Jack H. Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dense vertical programmable read only memory cell structure and pro...
- Patent number 5,343,063
- Issue date Aug 30, 1994
- SunDisk Corporation
- Jack H. Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
EEPROM with split gate source side injection
- Patent number 5,313,421
- Issue date May 17, 1994
- SunDisk Corporation
- Daniel C. Guterman
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and structure for programming floating gate memory cells
- Patent number 5,272,669
- Issue date Dec 21, 1993
- SunDisk Corporation
- Gheorghe Samachisa
- G11 - INFORMATION STORAGE
Information Patent Grant
Block electrically erasable EEPROM
- Patent number 4,783,766
- Issue date Nov 8, 1988
- Seeq Technology, Inc.
- Gheorghe Samachisa
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
EEPROM With Split Gate Source Side Injection
- Publication number 20060163645
- Publication date Jul 27, 2006
- Daniel C. Guterman
- G11 - INFORMATION STORAGE
Information Patent Application
Eeprom with split gate source side injection
- Publication number 20040063283
- Publication date Apr 1, 2004
- Daniel C. Guterman
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-state operation of dual floating gate array
- Publication number 20030132478
- Publication date Jul 17, 2003
- Daniel C. Guterman
- G11 - INFORMATION STORAGE
Information Patent Application
Eeprom cell array structure with specific floating gate shape
- Publication number 20030111702
- Publication date Jun 19, 2003
- Daniel C. Guterman
- G11 - INFORMATION STORAGE
Information Patent Application
EEPROM with split gate source side injection with sidewall spacers
- Publication number 20030052360
- Publication date Mar 20, 2003
- Daniel C. Guterman
- H01 - BASIC ELECTRIC ELEMENTS

Gheorghe Samachisa

Person

Patents Grantslast 30 patents

EEPROM with split gate source side injection

EEPROM with split gate source side infection with sidewall spacers

EEPROM with split gate source side injection with sidewall spacers

Eeprom with split gate source side injection

Multi-state operation of dual floating gate array

EEPROM cell array structure with specific floating gate shape

EEPROM with split gate source side injection with sidewall spacers

Dense vertical programmable read only memory cell structures and pr...

EEPROM with split gate source side injection

EEPROM with split gate source side injection

EEPROM with split gate source side injection

Eeprom with split gate source side injection

Dense vertical programmable read only memory cell structures and pr...

Method for forming EEPROM with split gate source side injection

Dense flash EEPROM cell array and peripheral supporting circuits fo...

Method of patterning polysilicon layers on substrate

EEPROM with split gate source side injection

Dense flash EEPROM cell array and peripheral supporting circuits fo...

Technique of forming over an irregular surface a polysilicon layer...

Method of making dense flash EEPROM cell array and peripheral suppo...

Method of making dense vertical programmable read only memory cell...

Dense vertical programmable read only memory cell structures and pr...

Dense vertical programmable read only memory cell structure and pro...

EEPROM with split gate source side injection

Method and structure for programming floating gate memory cells

Block electrically erasable EEPROM

Patents Applicationslast 30 patents

EEPROM With Split Gate Source Side Injection

Eeprom with split gate source side injection

Multi-state operation of dual floating gate array

Eeprom cell array structure with specific floating gate shape

EEPROM with split gate source side injection with sidewall spacers