Guowei Xu

Person

Ballston Lake, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Middle of line structures
- Patent number 10,978,566
- Issue date Apr 13, 2021
- GLOBALFOUNDRIES U.S. INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical resistor adjacent inactive gate over trench isolation
- Patent number 10,923,469
- Issue date Feb 16, 2021
- GLOBALFOUNDRIES U.S. INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with etch-selective spacer and self-aligned contact capping...
- Patent number 10,879,180
- Issue date Dec 29, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer structures for a transistor device
- Patent number 10,872,979
- Issue date Dec 22, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET having upper spacers adjacent gate and source/drain contacts
- Patent number 10,818,659
- Issue date Oct 27, 2020
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing FinFET with reduced parasitic capacitance a...
- Patent number 10,811,409
- Issue date Oct 20, 2020
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structure with dielectric bar containing gate to reduce effe...
- Patent number 10,797,049
- Issue date Oct 6, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation preservation during transistor fabrication
- Patent number 10,784,143
- Issue date Sep 22, 2020
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with high-k spacer and self-aligned contact capping layer
- Patent number 10,734,233
- Issue date Aug 4, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC structure with air gap adjacent to gate structure and methods of...
- Patent number 10,692,987
- Issue date Jun 23, 2020
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus, and manufacturing system for self-aligned patte...
- Patent number 10,685,881
- Issue date Jun 16, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut inside replacement metal gate trench to mitigate N-P proximity...
- Patent number 10,658,363
- Issue date May 19, 2020
- GLOBALFOUNDRIES Inc.
- Balaji Kannan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single diffusion cut for gate structures
- Patent number 10,651,173
- Issue date May 12, 2020
- GLOBALFOUNDRIES Inc.
- Guowei Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement metal gate with reduced shorting and uniform chamfering
- Patent number 10,636,893
- Issue date Apr 28, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chamfered replacement gate structures
- Patent number 10,636,890
- Issue date Apr 28, 2020
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming spacers adjacent gate structures of a transistor...
- Patent number 10,629,739
- Issue date Apr 21, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for chamfering work function material layers in gate caviti...
- Patent number 10,600,876
- Issue date Mar 24, 2020
- GLOBALFOUNDRIES Inc.
- Guowei Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Middle of line structures
- Patent number 10,580,875
- Issue date Mar 3, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using source/drain contact cap during gate cut
- Patent number 10,522,538
- Issue date Dec 31, 2019
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Different upper and lower spacers for contact
- Patent number 10,522,644
- Issue date Dec 31, 2019
- GLOBALFOUNDRIES Inc.
- Guowei Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut inside replacement metal gate trench to mitigate N-P proximity...
- Patent number 10,446,550
- Issue date Oct 15, 2019
- GLOBALFOUNDRIES Inc.
- Balaji Kannan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulating gate separation structure
- Patent number 10,431,499
- Issue date Oct 1, 2019
- GLOBALFOUNDRIES Inc.
- Guowei Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement metal gate patterning for nanosheet devices
- Patent number 10,410,933
- Issue date Sep 10, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Methods of forming source/drain contact structures on integrated ci...
- Patent number 10,373,877
- Issue date Aug 6, 2019
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulating gate separation structure and methods of making same
- Patent number 10,153,209
- Issue date Dec 11, 2018
- GLOBALFOUNDRIES Inc.
- Guowei Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure incorporating non-planar field effect...
- Patent number 10,068,902
- Issue date Sep 4, 2018
- GLOBALFOUNDRIES Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LATERAL ETCHING PROCESS TO REMOVE METAL GATE FOOT STRUCTURES
- Publication number 20250087530
- Publication date Mar 13, 2025
- Intel Corporation
- Chiao-Ti Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH-GATE STRUCTURE WITH AN AIRGAP SPACER IN A SEMICONDUCTOR DEVICE
- Publication number 20250089310
- Publication date Mar 13, 2025
- Intel Corporation
- Ting-Hsiang Hung
Information Patent Application
PERFORMANCE OPTIMIZATION OF TRANSISTORS SHARING CHANNEL STRUCTURES...
- Publication number 20250006734
- Publication date Jan 2, 2025
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ROUNDED NANORIBBONS WITH REGROWN CAPS
- Publication number 20240321962
- Publication date Sep 26, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH REDUCED N-P BOUNDARY EFFECT
- Publication number 20240321887
- Publication date Sep 26, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH PERFORMANCE-ENHANCING LAYOUT
- Publication number 20240321859
- Publication date Sep 26, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LONG CHANNEL FIN TRANSISTORS IN NANORIBBON-BASED DEVICES
- Publication number 20240321987
- Publication date Sep 26, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH BACKSIDE FIN TRIM ISOLATION
- Publication number 20240304619
- Publication date Sep 12, 2024
- Guowei Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF NANORIBBON-BASED TRANSISTORS USING PATTERNED FOUNDATION
- Publication number 20240304621
- Publication date Sep 12, 2024
- Intel Corporation
- Chiao-Ti Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANORIBBON-BASED TRANSISTORS WITH ETCH STOP LAYER TO ASSIST SUBFIN...
- Publication number 20240290835
- Publication date Aug 29, 2024
- Intel Corporation
- Chiao-Ti Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE FABRICATION FOR NANORIBBON-BASED TRANSISTORS
- Publication number 20240290788
- Publication date Aug 29, 2024
- Intel Corporation
- Guowei Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL...
- Publication number 20240222484
- Publication date Jul 4, 2024
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH SOURCE OR DRAIN CONTACTS HAVING...
- Publication number 20240178273
- Publication date May 30, 2024
- Intel Corporation
- Chiao-Ti HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE WITH RECESSED TRENCH CONTACT AND DEEP...
- Publication number 20240178101
- Publication date May 30, 2024
- Intel Corporation
- Tao CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NECKED RIBBON FOR BETTER N WORKFUNCTION FILLING AND DEVICE PERFORMANCE
- Publication number 20240105770
- Publication date Mar 28, 2024
- Intel Corporation
- Tao CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES WITH PROTECTION LINER BETWEEN DOPED SEMI...
- Publication number 20240105718
- Publication date Mar 28, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BARRIER LAYER FOR DIELECTRIC RECESS MITIGATION
- Publication number 20240088217
- Publication date Mar 14, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL REGIONS EXTENDING BETWEEN INNER GATE SPACERS
- Publication number 20240088265
- Publication date Mar 14, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATION PRESERVATION DURING TRANSISTOR FABRICATION
- Publication number 20200251377
- Publication date Aug 6, 2020
- GLOBALFOUNDRIES INC.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL RESISTOR ADJACENT INACTIVE GATE OVER TRENCH ISOLATION
- Publication number 20200227404
- Publication date Jul 16, 2020
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE DIFFUSION CUT FOR GATE STRUCTURES
- Publication number 20200176444
- Publication date Jun 4, 2020
- GLOBALFOUNDRIES INC.
- Guowei XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL SPACER STRUCTURES FOR A TRANSISTOR DEVICE
- Publication number 20200168731
- Publication date May 28, 2020
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIDDLE OF LINE STRUCTURES
- Publication number 20200152749
- Publication date May 14, 2020
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET STRUCTURE WITH DIELECTRIC BAR CONTAINING GATE TO REDUCE EFFE...
- Publication number 20200135723
- Publication date Apr 30, 2020
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC STRUCTURE WITH AIR GAP ADJACENT TO GATE STRUCTURE AND METHODS OF...
- Publication number 20200127109
- Publication date Apr 23, 2020
- GLOBALFOUNDRIES INC.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING FINFET WITH REDUCED PARASITIC CAPACITANCE A...
- Publication number 20200119001
- Publication date Apr 16, 2020
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET HAVING UPPER SPACERS ADJACENT GATE AND SOURCE/DRAIN CONTACTS
- Publication number 20200119000
- Publication date Apr 16, 2020
- GLOBALFOUNDRIES INC.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT METAL GATE WITH REDUCED SHORTING AND UNIFORM CHAMFERING
- Publication number 20200066879
- Publication date Feb 27, 2020
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUS, AND MANUFACTURING SYSTEM FOR SELF-ALIGNED PATTE...
- Publication number 20200066588
- Publication date Feb 27, 2020
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SPACERS ADJACENT GATE STRUCTURES OF A TRANSISTOR...
- Publication number 20200027979
- Publication date Jan 23, 2020
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Middle of line structures

Vertical resistor adjacent inactive gate over trench isolation

FinFET with etch-selective spacer and self-aligned contact capping...

Spacer structures for a transistor device

FinFET having upper spacers adjacent gate and source/drain contacts

Method of manufacturing FinFET with reduced parasitic capacitance a...

FinFET structure with dielectric bar containing gate to reduce effe...

Trench isolation preservation during transistor fabrication

FinFET with high-k spacer and self-aligned contact capping layer

IC structure with air gap adjacent to gate structure and methods of...

Methods, apparatus, and manufacturing system for self-aligned patte...

Cut inside replacement metal gate trench to mitigate N-P proximity...

Single diffusion cut for gate structures

Replacement metal gate with reduced shorting and uniform chamfering

Chamfered replacement gate structures

Methods of forming spacers adjacent gate structures of a transistor...

Methods for chamfering work function material layers in gate caviti...

Middle of line structures

Using source/drain contact cap during gate cut

Different upper and lower spacers for contact

Cut inside replacement metal gate trench to mitigate N-P proximity...

Insulating gate separation structure

Replacement metal gate patterning for nanosheet devices

Methods of forming source/drain contact structures on integrated ci...

Insulating gate separation structure and methods of making same

Integrated circuit structure incorporating non-planar field effect...

Patents Applicationslast 30 patents

LATERAL ETCHING PROCESS TO REMOVE METAL GATE FOOT STRUCTURES

THROUGH-GATE STRUCTURE WITH AN AIRGAP SPACER IN A SEMICONDUCTOR DEVICE

PERFORMANCE OPTIMIZATION OF TRANSISTORS SHARING CHANNEL STRUCTURES...

ROUNDED NANORIBBONS WITH REGROWN CAPS

INTEGRATED CIRCUIT DEVICE WITH REDUCED N-P BOUNDARY EFFECT

INTEGRATED CIRCUIT DEVICE WITH PERFORMANCE-ENHANCING LAYOUT

LONG CHANNEL FIN TRANSISTORS IN NANORIBBON-BASED DEVICES

INTEGRATED CIRCUIT DEVICE WITH BACKSIDE FIN TRIM ISOLATION

FABRICATION OF NANORIBBON-BASED TRANSISTORS USING PATTERNED FOUNDATION

NANORIBBON-BASED TRANSISTORS WITH ETCH STOP LAYER TO ASSIST SUBFIN...

METAL GATE FABRICATION FOR NANORIBBON-BASED TRANSISTORS

TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL...

INTEGRATED CIRCUIT STRUCTURES WITH SOURCE OR DRAIN CONTACTS HAVING...

INTEGRATED CIRCUIT STRUCTURE WITH RECESSED TRENCH CONTACT AND DEEP...

NECKED RIBBON FOR BETTER N WORKFUNCTION FILLING AND DEVICE PERFORMANCE

INTEGRATED CIRCUIT DEVICES WITH PROTECTION LINER BETWEEN DOPED SEMI...

BARRIER LAYER FOR DIELECTRIC RECESS MITIGATION

EPITAXIAL REGIONS EXTENDING BETWEEN INNER GATE SPACERS

TRENCH ISOLATION PRESERVATION DURING TRANSISTOR FABRICATION

VERTICAL RESISTOR ADJACENT INACTIVE GATE OVER TRENCH ISOLATION

SINGLE DIFFUSION CUT FOR GATE STRUCTURES

NOVEL SPACER STRUCTURES FOR A TRANSISTOR DEVICE

MIDDLE OF LINE STRUCTURES

FINFET STRUCTURE WITH DIELECTRIC BAR CONTAINING GATE TO REDUCE EFFE...

IC STRUCTURE WITH AIR GAP ADJACENT TO GATE STRUCTURE AND METHODS OF...

METHOD OF MANUFACTURING FINFET WITH REDUCED PARASITIC CAPACITANCE A...

FINFET HAVING UPPER SPACERS ADJACENT GATE AND SOURCE/DRAIN CONTACTS

REPLACEMENT METAL GATE WITH REDUCED SHORTING AND UNIFORM CHAMFERING

METHODS, APPARATUS, AND MANUFACTURING SYSTEM FOR SELF-ALIGNED PATTE...

METHODS OF FORMING SPACERS ADJACENT GATE STRUCTURES OF A TRANSISTOR...