Han Wui Then

Person

Hillsboro, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Tunnel polarization junction III-N transistors
- Patent number 11,942,378
- Issue date Mar 26, 2024
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep gate-all-around semiconductor device having germanium or group...
- Patent number 11,894,465
- Issue date Feb 6, 2024
- Google LLC
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superlattice FINFET with tunable drive current capability
- Patent number 11,881,511
- Issue date Jan 23, 2024
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N transistors with contacts of modified widths
- Patent number 11,848,362
- Issue date Dec 19, 2023
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride light emitting devices including a polarization j...
- Patent number 11,799,057
- Issue date Oct 24, 2023
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of III-N transistors and semiconductor layer transfer
- Patent number 11,791,221
- Issue date Oct 17, 2023
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors including first and second semiconductor materials betw...
- Patent number 11,777,022
- Issue date Oct 3, 2023
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
E-D mode 2DEG FET with gate spacer to locally tune VT and improve b...
- Patent number 11,757,027
- Issue date Sep 12, 2023
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride (III-N) devices with reduced contact resistance a...
- Patent number 11,728,346
- Issue date Aug 15, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-Nitride devices on SOI substrates having a compliant layer
- Patent number 11,715,791
- Issue date Aug 1, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-induced threshold voltage tuning in III-N transistors
- Patent number 11,715,790
- Issue date Aug 1, 2023
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus to form silicon-based transistors on group II...
- Patent number 11,715,799
- Issue date Aug 1, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High aspect ratio non-planar capacitors formed via cavity fill
- Patent number 11,710,765
- Issue date Jul 25, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Acoustic resonator structure
- Patent number 11,705,882
- Issue date Jul 18, 2023
- Intel Corporation
- Paul Fischer
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Monolithic integration of a thin film transistor over a complimenta...
- Patent number 11,699,704
- Issue date Jul 11, 2023
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate structure with hybrid stacks of dielectric material
- Patent number 11,688,788
- Issue date Jun 27, 2023
- Intel Corporation
- Johann C. Rode
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N transistors with local stressors for threshold voltage control
- Patent number 11,670,709
- Issue date Jun 6, 2023
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Logic circuit with indium nitride quantum well
- Patent number 11,670,637
- Issue date Jun 6, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N nanostructures formed via cavity fill
- Patent number 11,670,686
- Issue date Jun 6, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Film bulk acoustic resonator (FBAR) devices for high frequency RF f...
- Patent number 11,671,075
- Issue date Jun 6, 2023
- Intel Corporation
- Sansaptak Dasgupta
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
III-N metal-insulator-semiconductor field effect transistors with m...
- Patent number 11,664,417
- Issue date May 30, 2023
- Intel Corporation
- Walid Hafez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with ion- or fixed charge-based field plate structures
- Patent number 11,658,217
- Issue date May 23, 2023
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N transistors integrated with thin-film transistors having grad...
- Patent number 11,652,143
- Issue date May 16, 2023
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Antenna gate field plate on 2DEG planar FET
- Patent number 11,626,513
- Issue date Apr 11, 2023
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FBAR devices having multiple epitaxial layers stacked on a same sub...
- Patent number 11,616,488
- Issue date Mar 28, 2023
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Side-by-side integration of III-n transistors and thin-film transis...
- Patent number 11,610,887
- Issue date Mar 21, 2023
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cap layer on a polarization layer to preserve channel sheet resistance
- Patent number 11,610,971
- Issue date Mar 21, 2023
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar transistors with wrap-around gates and wrap-around source an...
- Patent number 11,588,037
- Issue date Feb 21, 2023
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microelectronic devices having air gap structures integrated with i...
- Patent number 11,587,862
- Issue date Feb 21, 2023
- Tahoe Research, LTD.
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of passive components in III-N devices
- Patent number 11,587,924
- Issue date Feb 21, 2023
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GALLIUM NITRIDE (GAN) TRANSISTORS WITH LATERAL DRAIN DEPLETION
- Publication number 20240021725
- Publication date Jan 18, 2024
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN 3D POWER BLOCK
- Publication number 20230307441
- Publication date Sep 28, 2023
- Intel Corporation
- Ahmed ABOU-ALFOTOUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DEVICES HAVING AIR GAP STRUCTURES INTEGRATED WITH I...
- Publication number 20230207446
- Publication date Jun 29, 2023
- Tahoe Research, Ltd.
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR THERMOELECTRIC-ENHANCED COOLING
- Publication number 20230207421
- Publication date Jun 29, 2023
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED GROUP III-NITROGEN AND SILICON TRANSISTORS ON THE SAME DIE
- Publication number 20230197732
- Publication date Jun 22, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTORS WITH RELIABILITY ENHANCEMENTS
- Publication number 20230108072
- Publication date Apr 6, 2023
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE SEMICONDUCTOR ARRAY WITH HETEROGENEOUS ELECTRODES...
- Publication number 20230102318
- Publication date Mar 30, 2023
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEX FIELD-SHAPING BY FINE VARIATION OF LOCAL MATERIAL DENSITY O...
- Publication number 20230097805
- Publication date Mar 30, 2023
- Intel Corporation
- Samuel James BADER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) LAYER TRANSFER FOR INTEGRATED CIRCUIT TECHNOLOGY
- Publication number 20230090106
- Publication date Mar 23, 2023
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY WITH OPTICAL CO...
- Publication number 20230081460
- Publication date Mar 16, 2023
- Intel Corporation
- Han Wui THEN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MICROELECTRONIC ASSEMBLIES HAVING BACKSIDE DIE-TO-PACKAGE INTERCONN...
- Publication number 20230073026
- Publication date Mar 9, 2023
- Intel Corporation
- Adel A. Elsherbini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) EPITAXY ON PATTERNED SUBSTRATE FOR INTEGRATED...
- Publication number 20230066336
- Publication date Mar 2, 2023
- Intel Corporation
- Pratik KOIRALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY WITH MULTI-LAYE...
- Publication number 20230069054
- Publication date Mar 2, 2023
- Intel Corporation
- Souvik GHOSH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) SELECTIVE EPITAXIAL WINDOWS FOR INTEGRATED CI...
- Publication number 20230062922
- Publication date Mar 2, 2023
- Intel Corporation
- Samuel James BADER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N DIODES WITH N-DOPED WELLS AND CAPPING LAYERS
- Publication number 20230068318
- Publication date Mar 2, 2023
- Intel Corporation
- Richard Geiger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY WITH RESONATORS
- Publication number 20230057992
- Publication date Feb 23, 2023
- Intel Corporation
- Tanay GOSAVI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) LAYER TRANSFER AND REGROWTH FOR INTEGRATED CI...
- Publication number 20230054719
- Publication date Feb 23, 2023
- Intel Corporation
- Pratik KOIRALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY
- Publication number 20230047449
- Publication date Feb 16, 2023
- Intel Corporation
- Nicole K. THOMAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE METAL INSULATOR METAL (MIM) CAPACITOR
- Publication number 20230050491
- Publication date Feb 16, 2023
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTIGUOUS SHIELD STRUCTURES IN MICROELECTRONIC ASSEMBLIES HAVING H...
- Publication number 20220399305
- Publication date Dec 15, 2022
- Intel Corporation
- Beomseok Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ACTIVE DEVICE LAYER AT INTERCONNECT INTERFACES
- Publication number 20220399324
- Publication date Dec 15, 2022
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE CAPACITANCE DEVICE WITH MULTIPLE TWO-DIMENSIONAL ELECTRON...
- Publication number 20220320350
- Publication date Oct 6, 2022
- Intel Corporation
- Harald Gossner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICIDE FOR GROUP III-NITRIDE DEVICES AND METHODS OF FABRICATION
- Publication number 20220293738
- Publication date Sep 15, 2022
- Intel Corporation
- Sansaptak DASGUPTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ASPECT RATIO NON-PLANAR CAPACITORS FORMED VIA CAVITY FILL
- Publication number 20220246717
- Publication date Aug 4, 2022
- Intel Corporation
- MARKO RADOSAVLJEVIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELD STRUCTURES IN MICROELECTRONIC ASSEMBLIES HAVING DIRECT BONDING
- Publication number 20220199546
- Publication date Jun 23, 2022
- Intel Corporation
- Adel A. Elsherbini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNEL POLARIZATION JUNCTION III-N TRANSISTORS
- Publication number 20220172996
- Publication date Jun 2, 2022
- Intel Corporation
- HAN WUI THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY
- Publication number 20220102339
- Publication date Mar 31, 2022
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY
- Publication number 20220102344
- Publication date Mar 31, 2022
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC ASSEMBLIES WITH INDUCTORS IN DIRECT BONDING REGIONS
- Publication number 20220093546
- Publication date Mar 24, 2022
- Intel Corporation
- Adel A. Elsherbini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIRECT BONDING IN MICROELECTRONIC ASSEMBLIES
- Publication number 20220093492
- Publication date Mar 24, 2022
- Intel Corporation
- Adel A. Elsherbini
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR

Han Wui Then

Person

Patents Grantslast 30 patents

Tunnel polarization junction III-N transistors

Deep gate-all-around semiconductor device having germanium or group...

Superlattice FINFET with tunable drive current capability

III-N transistors with contacts of modified widths

Group III-nitride light emitting devices including a polarization j...

Integration of III-N transistors and semiconductor layer transfer

Transistors including first and second semiconductor materials betw...

E-D mode 2DEG FET with gate spacer to locally tune VT and improve b...

Group III-nitride (III-N) devices with reduced contact resistance a...

Group III-Nitride devices on SOI substrates having a compliant layer

Charge-induced threshold voltage tuning in III-N transistors

Methods and apparatus to form silicon-based transistors on group II...

High aspect ratio non-planar capacitors formed via cavity fill

Acoustic resonator structure

Monolithic integration of a thin film transistor over a complimenta...

Transistor gate structure with hybrid stacks of dielectric material

III-N transistors with local stressors for threshold voltage control

Logic circuit with indium nitride quantum well

III-N nanostructures formed via cavity fill

Film bulk acoustic resonator (FBAR) devices for high frequency RF f...

III-N metal-insulator-semiconductor field effect transistors with m...

Transistors with ion- or fixed charge-based field plate structures

III-N transistors integrated with thin-film transistors having grad...

Antenna gate field plate on 2DEG planar FET

FBAR devices having multiple epitaxial layers stacked on a same sub...

Side-by-side integration of III-n transistors and thin-film transis...

Cap layer on a polarization layer to preserve channel sheet resistance

Planar transistors with wrap-around gates and wrap-around source an...

Microelectronic devices having air gap structures integrated with i...

Integration of passive components in III-N devices

Patents Applicationslast 30 patents

GALLIUM NITRIDE (GAN) TRANSISTORS WITH LATERAL DRAIN DEPLETION

GAN 3D POWER BLOCK

MICROELECTRONIC DEVICES HAVING AIR GAP STRUCTURES INTEGRATED WITH I...

TECHNOLOGIES FOR THERMOELECTRIC-ENHANCED COOLING

INTEGRATED GROUP III-NITROGEN AND SILICON TRANSISTORS ON THE SAME DIE

GALLIUM NITRIDE TRANSISTORS WITH RELIABILITY ENHANCEMENTS

GROUP III-NITRIDE SEMICONDUCTOR ARRAY WITH HETEROGENEOUS ELECTRODES...

COMPLEX FIELD-SHAPING BY FINE VARIATION OF LOCAL MATERIAL DENSITY O...

GALLIUM NITRIDE (GAN) LAYER TRANSFER FOR INTEGRATED CIRCUIT TECHNOLOGY

GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY WITH OPTICAL CO...

MICROELECTRONIC ASSEMBLIES HAVING BACKSIDE DIE-TO-PACKAGE INTERCONN...

GALLIUM NITRIDE (GAN) EPITAXY ON PATTERNED SUBSTRATE FOR INTEGRATED...

GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY WITH MULTI-LAYE...

GALLIUM NITRIDE (GAN) SELECTIVE EPITAXIAL WINDOWS FOR INTEGRATED CI...

III-N DIODES WITH N-DOPED WELLS AND CAPPING LAYERS

GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY WITH RESONATORS

GALLIUM NITRIDE (GAN) LAYER TRANSFER AND REGROWTH FOR INTEGRATED CI...

GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY

HIGH VOLTAGE METAL INSULATOR METAL (MIM) CAPACITOR

CONTIGUOUS SHIELD STRUCTURES IN MICROELECTRONIC ASSEMBLIES HAVING H...

ACTIVE DEVICE LAYER AT INTERCONNECT INTERFACES

VARIABLE CAPACITANCE DEVICE WITH MULTIPLE TWO-DIMENSIONAL ELECTRON...

SILICIDE FOR GROUP III-NITRIDE DEVICES AND METHODS OF FABRICATION

HIGH ASPECT RATIO NON-PLANAR CAPACITORS FORMED VIA CAVITY FILL

SHIELD STRUCTURES IN MICROELECTRONIC ASSEMBLIES HAVING DIRECT BONDING

TUNNEL POLARIZATION JUNCTION III-N TRANSISTORS

GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY

GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY

MICROELECTRONIC ASSEMBLIES WITH INDUCTORS IN DIRECT BONDING REGIONS

DIRECT BONDING IN MICROELECTRONIC ASSEMBLIES