Han Wui Then

Person

Hillsboro, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Microelectronic devices having air gap structures integrated with i...
- Patent number 12,148,690
- Issue date Nov 19, 2024
- Tahoe Research, LTD.
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of Si-based transistors with non-Si technologies by sem...
- Patent number 12,148,757
- Issue date Nov 19, 2024
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride (GAN) three-dimensional integrated circuit technology
- Patent number 12,148,747
- Issue date Nov 19, 2024
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride (III-N) devices with reduced contact resistance a...
- Patent number 12,125,888
- Issue date Oct 22, 2024
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microelectronic assemblies with inductors in direct bonding regions
- Patent number 12,107,060
- Issue date Oct 1, 2024
- Intel Corproation
- Adel A. Elsherbini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide for group III-nitride devices and methods of fabrication
- Patent number 12,080,763
- Issue date Sep 3, 2024
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microelectronic assemblies with inductors in direct bonding regions
- Patent number 12,062,631
- Issue date Aug 13, 2024
- Intel Corporation
- Adel A Elsherbini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable capacitance device with multiple two-dimensional electron...
- Patent number 12,034,085
- Issue date Jul 9, 2024
- Intel Corporation
- Harald Gossner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N transistor arrangements for reducing nonlinearity of off-stat...
- Patent number 12,027,613
- Issue date Jul 2, 2024
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel polarization junction III-N transistors
- Patent number 11,942,378
- Issue date Mar 26, 2024
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep gate-all-around semiconductor device having germanium or group...
- Patent number 11,894,465
- Issue date Feb 6, 2024
- Google LLC
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superlattice FINFET with tunable drive current capability
- Patent number 11,881,511
- Issue date Jan 23, 2024
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N transistors with contacts of modified widths
- Patent number 11,848,362
- Issue date Dec 19, 2023
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride light emitting devices including a polarization j...
- Patent number 11,799,057
- Issue date Oct 24, 2023
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of III-N transistors and semiconductor layer transfer
- Patent number 11,791,221
- Issue date Oct 17, 2023
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors including first and second semiconductor materials betw...
- Patent number 11,777,022
- Issue date Oct 3, 2023
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
E-D mode 2DEG FET with gate spacer to locally tune VT and improve b...
- Patent number 11,757,027
- Issue date Sep 12, 2023
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride (III-N) devices with reduced contact resistance a...
- Patent number 11,728,346
- Issue date Aug 15, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-Nitride devices on SOI substrates having a compliant layer
- Patent number 11,715,791
- Issue date Aug 1, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-induced threshold voltage tuning in III-N transistors
- Patent number 11,715,790
- Issue date Aug 1, 2023
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus to form silicon-based transistors on group II...
- Patent number 11,715,799
- Issue date Aug 1, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High aspect ratio non-planar capacitors formed via cavity fill
- Patent number 11,710,765
- Issue date Jul 25, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Acoustic resonator structure
- Patent number 11,705,882
- Issue date Jul 18, 2023
- Intel Corporation
- Paul Fischer
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Monolithic integration of a thin film transistor over a complimenta...
- Patent number 11,699,704
- Issue date Jul 11, 2023
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate structure with hybrid stacks of dielectric material
- Patent number 11,688,788
- Issue date Jun 27, 2023
- Intel Corporation
- Johann C. Rode
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N transistors with local stressors for threshold voltage control
- Patent number 11,670,709
- Issue date Jun 6, 2023
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Logic circuit with indium nitride quantum well
- Patent number 11,670,637
- Issue date Jun 6, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N nanostructures formed via cavity fill
- Patent number 11,670,686
- Issue date Jun 6, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Film bulk acoustic resonator (FBAR) devices for high frequency RF f...
- Patent number 11,671,075
- Issue date Jun 6, 2023
- Intel Corporation
- Sansaptak Dasgupta
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
III-N metal-insulator-semiconductor field effect transistors with m...
- Patent number 11,664,417
- Issue date May 30, 2023
- Intel Corporation
- Walid Hafez
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MICROELECTRONIC ASSEMBLIES WITH INDUCTORS IN DIRECT BONDING REGIONS
- Publication number 20240355768
- Publication date Oct 24, 2024
- Intel Corporation
- Adel A. Elsherbini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR INCLUDING WIDE BAND GAP MATERIALS
- Publication number 20240222438
- Publication date Jul 4, 2024
- Intel Corporation
- Abhishek Anil SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR IN A SILICON CARBIDE LAYER AND A TRANSISTOR IN A GALLIUM...
- Publication number 20240222469
- Publication date Jul 4, 2024
- Intel Corporation
- Abhishek Anil SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COUPLING A LAYER OF SILICON CARBIDE WITH AN ADJACENT LAYER
- Publication number 20240222435
- Publication date Jul 4, 2024
- Intel Corporation
- Abhishek Anil SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH A BODY AND BACK GATE STRUCTURE IN DIFFERENT MATERIA...
- Publication number 20240222440
- Publication date Jul 4, 2024
- Intel Corporation
- Samuel James BADER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DYNAMIC RANDOM-ACCESS MEMORY USING WIDE BAND GAP MATERIALS
- Publication number 20240224504
- Publication date Jul 4, 2024
- Intel Corporation
- Abhishek Anil SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES IN A SILICON CARBIDE LAYER COUPLED WITH DEVICES IN A GALLIU...
- Publication number 20240222228
- Publication date Jul 4, 2024
- Intel Corporation
- Abhishek Anil SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE HIGH
- Publication number 20240213140
- Publication date Jun 27, 2024
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) LAYER ON SUBSTRATE CARBURIZATION FOR INTEGRAT...
- Publication number 20240213331
- Publication date Jun 27, 2024
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) DEVICES WITH THROUGH-SILICON VIAS
- Publication number 20240213118
- Publication date Jun 27, 2024
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYER TRANSFER DIODE OR THIN-FILM RESISTOR FOR GALLIUM NITRIDE (GAN...
- Publication number 20240203815
- Publication date Jun 20, 2024
- Intel Corporation
- Samuel James BADER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYER TRANSFER CLAMP FOR GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT T...
- Publication number 20240203978
- Publication date Jun 20, 2024
- Intel Corporation
- Samuel James BADER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW ALUMINUM CONCENTRATION ALUMINUM GALLIUM NITRIDE INTERLAYER FOR...
- Publication number 20240204091
- Publication date Jun 20, 2024
- Intel Corporation
- Heli Vora
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYER TRANSFER TRANSISTOR FOR GALLIUM NITRIDE (GAN) INTEGRATED CIRC...
- Publication number 20240203979
- Publication date Jun 20, 2024
- Intel Corporation
- Samuel James BADER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) WITH INTERLAYERS FOR INTEGRATED CIRCUIT TECHN...
- Publication number 20240204059
- Publication date Jun 20, 2024
- Intel Corporation
- Pratik KOIRALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) TRANSISTORS WITH LATERAL DRAIN DEPLETION
- Publication number 20240021725
- Publication date Jan 18, 2024
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN 3D POWER BLOCK
- Publication number 20230307441
- Publication date Sep 28, 2023
- Intel Corporation
- Ahmed ABOU-ALFOTOUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DEVICES HAVING AIR GAP STRUCTURES INTEGRATED WITH I...
- Publication number 20230207446
- Publication date Jun 29, 2023
- Tahoe Research, Ltd.
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR THERMOELECTRIC-ENHANCED COOLING
- Publication number 20230207421
- Publication date Jun 29, 2023
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED GROUP III-NITROGEN AND SILICON TRANSISTORS ON THE SAME DIE
- Publication number 20230197732
- Publication date Jun 22, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTORS WITH RELIABILITY ENHANCEMENTS
- Publication number 20230108072
- Publication date Apr 6, 2023
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE SEMICONDUCTOR ARRAY WITH HETEROGENEOUS ELECTRODES...
- Publication number 20230102318
- Publication date Mar 30, 2023
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEX FIELD-SHAPING BY FINE VARIATION OF LOCAL MATERIAL DENSITY O...
- Publication number 20230097805
- Publication date Mar 30, 2023
- Intel Corporation
- Samuel James BADER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) LAYER TRANSFER FOR INTEGRATED CIRCUIT TECHNOLOGY
- Publication number 20230090106
- Publication date Mar 23, 2023
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY WITH OPTICAL CO...
- Publication number 20230081460
- Publication date Mar 16, 2023
- Intel Corporation
- Han Wui THEN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MICROELECTRONIC ASSEMBLIES HAVING BACKSIDE DIE-TO-PACKAGE INTERCONN...
- Publication number 20230073026
- Publication date Mar 9, 2023
- Intel Corporation
- Adel A. Elsherbini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY WITH MULTI-LAYE...
- Publication number 20230069054
- Publication date Mar 2, 2023
- Intel Corporation
- Souvik GHOSH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) EPITAXY ON PATTERNED SUBSTRATE FOR INTEGRATED...
- Publication number 20230066336
- Publication date Mar 2, 2023
- Intel Corporation
- Pratik KOIRALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) SELECTIVE EPITAXIAL WINDOWS FOR INTEGRATED CI...
- Publication number 20230062922
- Publication date Mar 2, 2023
- Intel Corporation
- Samuel James BADER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N DIODES WITH N-DOPED WELLS AND CAPPING LAYERS
- Publication number 20230068318
- Publication date Mar 2, 2023
- Intel Corporation
- Richard Geiger
- H01 - BASIC ELECTRIC ELEMENTS

Han Wui Then

Person

Patents Grantslast 30 patents

Microelectronic devices having air gap structures integrated with i...

Integration of Si-based transistors with non-Si technologies by sem...

Gallium nitride (GAN) three-dimensional integrated circuit technology

Group III-nitride (III-N) devices with reduced contact resistance a...

Microelectronic assemblies with inductors in direct bonding regions

Silicide for group III-nitride devices and methods of fabrication

Microelectronic assemblies with inductors in direct bonding regions

Variable capacitance device with multiple two-dimensional electron...

III-N transistor arrangements for reducing nonlinearity of off-stat...

Tunnel polarization junction III-N transistors

Deep gate-all-around semiconductor device having germanium or group...

Superlattice FINFET with tunable drive current capability

III-N transistors with contacts of modified widths

Group III-nitride light emitting devices including a polarization j...

Integration of III-N transistors and semiconductor layer transfer

Transistors including first and second semiconductor materials betw...

E-D mode 2DEG FET with gate spacer to locally tune VT and improve b...

Group III-nitride (III-N) devices with reduced contact resistance a...

Group III-Nitride devices on SOI substrates having a compliant layer

Charge-induced threshold voltage tuning in III-N transistors

Methods and apparatus to form silicon-based transistors on group II...

High aspect ratio non-planar capacitors formed via cavity fill

Acoustic resonator structure

Monolithic integration of a thin film transistor over a complimenta...

Transistor gate structure with hybrid stacks of dielectric material

III-N transistors with local stressors for threshold voltage control

Logic circuit with indium nitride quantum well

III-N nanostructures formed via cavity fill

Film bulk acoustic resonator (FBAR) devices for high frequency RF f...

III-N metal-insulator-semiconductor field effect transistors with m...

Patents Applicationslast 30 patents

MICROELECTRONIC ASSEMBLIES WITH INDUCTORS IN DIRECT BONDING REGIONS

TRANSISTOR INCLUDING WIDE BAND GAP MATERIALS

TRANSISTOR IN A SILICON CARBIDE LAYER AND A TRANSISTOR IN A GALLIUM...

COUPLING A LAYER OF SILICON CARBIDE WITH AN ADJACENT LAYER

TRANSISTOR WITH A BODY AND BACK GATE STRUCTURE IN DIFFERENT MATERIA...

DYNAMIC RANDOM-ACCESS MEMORY USING WIDE BAND GAP MATERIALS

DEVICES IN A SILICON CARBIDE LAYER COUPLED WITH DEVICES IN A GALLIU...

INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE HIGH

GALLIUM NITRIDE (GAN) LAYER ON SUBSTRATE CARBURIZATION FOR INTEGRAT...

GALLIUM NITRIDE (GAN) DEVICES WITH THROUGH-SILICON VIAS

LAYER TRANSFER DIODE OR THIN-FILM RESISTOR FOR GALLIUM NITRIDE (GAN...

LAYER TRANSFER CLAMP FOR GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT T...

LOW ALUMINUM CONCENTRATION ALUMINUM GALLIUM NITRIDE INTERLAYER FOR...

LAYER TRANSFER TRANSISTOR FOR GALLIUM NITRIDE (GAN) INTEGRATED CIRC...

GALLIUM NITRIDE (GAN) WITH INTERLAYERS FOR INTEGRATED CIRCUIT TECHN...

GALLIUM NITRIDE (GAN) TRANSISTORS WITH LATERAL DRAIN DEPLETION

GAN 3D POWER BLOCK

MICROELECTRONIC DEVICES HAVING AIR GAP STRUCTURES INTEGRATED WITH I...

TECHNOLOGIES FOR THERMOELECTRIC-ENHANCED COOLING

INTEGRATED GROUP III-NITROGEN AND SILICON TRANSISTORS ON THE SAME DIE

GALLIUM NITRIDE TRANSISTORS WITH RELIABILITY ENHANCEMENTS

GROUP III-NITRIDE SEMICONDUCTOR ARRAY WITH HETEROGENEOUS ELECTRODES...

COMPLEX FIELD-SHAPING BY FINE VARIATION OF LOCAL MATERIAL DENSITY O...

GALLIUM NITRIDE (GAN) LAYER TRANSFER FOR INTEGRATED CIRCUIT TECHNOLOGY

GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY WITH OPTICAL CO...

MICROELECTRONIC ASSEMBLIES HAVING BACKSIDE DIE-TO-PACKAGE INTERCONN...

GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY WITH MULTI-LAYE...

GALLIUM NITRIDE (GAN) EPITAXY ON PATTERNED SUBSTRATE FOR INTEGRATED...

GALLIUM NITRIDE (GAN) SELECTIVE EPITAXIAL WINDOWS FOR INTEGRATED CI...

III-N DIODES WITH N-DOPED WELLS AND CAPPING LAYERS