Haruo Okano

Person

Narita, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for production of semiconductor device
- Patent number 6,306,756
- Issue date Oct 23, 2001
- Kabushiki Kaisha Toshiba
- Masahiko Hasunuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method, manufacturing apparatus,...
- Patent number 6,185,472
- Issue date Feb 6, 2001
- Kabushiki Kaisha Toshiba
- Shinji Onga
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Inductive RF plasma reactor with overhead coil and conductive lamin...
- Patent number 6,132,551
- Issue date Oct 17, 2000
- Applied Materials, Inc.
- Keiji Horioka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and its fabricating method
- Patent number 6,093,243
- Issue date Jul 25, 2000
- Kabushiki Kaisha Toshiba
- Takako Okada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for production of semiconductor device
- Patent number 6,090,701
- Issue date Jul 18, 2000
- Kabushiki Kaisha Toshiba
- Masahiko Hasunuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and its fabricating method
- Patent number 6,066,872
- Issue date May 23, 2000
- Kabushiki Kaisha Toshiba
- Takako Okada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polishing apparatus and method for planarizing layer on a semicondu...
- Patent number 5,948,205
- Issue date Sep 7, 1999
- Kabushiki Kaisha Toshiba
- Masako Kodera
- B24 - GRINDING POLISHING
Information Patent Grant
Polishing apparatus and method for planarizing layer on a semicondu...
- Patent number 5,914,275
- Issue date Jun 22, 1999
- Kabushiki Kaisha Toshiba
- Masako Kodera
- B24 - GRINDING POLISHING
Information Patent Grant
Magnetron plasma processing apparatus and processing method
- Patent number 5,888,338
- Issue date Mar 30, 1999
- Tokyo Electron Limited
- Hiromi Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and its fabricating method
- Patent number 5,879,447
- Issue date Mar 9, 1999
- Kabushiki Kaisha Toshiba
- Takako Okada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polishing method and polishing apparatus
- Patent number 5,775,980
- Issue date Jul 7, 1998
- Kabushiki Kaisha Toshiba
- Yasutaka Sasaki
- B24 - GRINDING POLISHING
Information Patent Grant
Method for forming a film on a substrate by activating a reactive gas
- Patent number 5,776,557
- Issue date Jul 7, 1998
- Kabushiki Kaisha Toshiba
- Haruo Okano
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 5,733,713
- Issue date Mar 31, 1998
- Kabushiki Kaisha Toshiba
- Hiroyuki Yano
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Semiconductor device having a metal film formed in a groove in an i...
- Patent number 5,731,634
- Issue date Mar 24, 1998
- Kabushiki Kaisha Toshiba
- Mie Matsuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 5,707,487
- Issue date Jan 13, 1998
- Kabushiki Kaisha Toshiba
- Masaru Hori
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method of forming a metal oxide film
- Patent number 5,686,151
- Issue date Nov 11, 1997
- Kabushiki Kaisha Toshiba
- Keitaro Imai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Exposure mask, exposure mask substrate, method for fabricating the...
- Patent number 5,679,484
- Issue date Oct 21, 1997
- Kabushiki Kaisha Toshiba
- Shinichi Ito
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Plasma generating apparatus and surface processing apparatus
- Patent number 5,660,744
- Issue date Aug 26, 1997
- Kabushiki Kaisha Toshiba
- Makoto Sekine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a single-crystal metal wiring
- Patent number 5,661,345
- Issue date Aug 26, 1997
- Kabushiki Kaisha Toshiba
- Junichi Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetron plasma processing apparatus and processing method
- Patent number 5,660,671
- Issue date Aug 26, 1997
- Tokyo Electron Limited
- Hiromi Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film forming method and apparatus
- Patent number 5,658,389
- Issue date Aug 19, 1997
- Kabushiki Kaisha Toshiba
- Tetsuo Matsuda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 5,654,237
- Issue date Aug 5, 1997
- Kabushiki Kaisha Toshiba
- Kyoichi Suguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 5,641,581
- Issue date Jun 24, 1997
- Kabushiki Kaisha Toshiba
- Yukio Nishiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making semiconductor integrated-circuit capacitor
- Patent number 5,641,702
- Issue date Jun 24, 1997
- Kabushiki Kaisha Toshiba
- Keitaro Imai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Focused ion beam deposition using TMCTS
- Patent number 5,639,699
- Issue date Jun 17, 1997
- Kabushiki Kaisha Toshiba
- Hiroko Nakamura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Exposure mask, exposure mask substrate, method for fabricating the...
- Patent number 5,620,815
- Issue date Apr 15, 1997
- Kabushiki Kaisha Toshiba
- Shinichi Ito
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Polishing method and polishing apparatus
- Patent number 5,607,718
- Issue date Mar 4, 1997
- Kabushiki Kaisha Toshiba
- Yasutaka Sasaki
- B24 - GRINDING POLISHING
Information Patent Grant
Semiconductor planarizing apparatus
- Patent number 5,597,341
- Issue date Jan 28, 1997
- Kabushiki Kaisha Toshiba
- Masako Kodera
- B24 - GRINDING POLISHING
Information Patent Grant
Method for forming a film on a substrate by activating a reactive gas
- Patent number 5,591,486
- Issue date Jan 7, 1997
- Kabushiki Kaisha Toshiba
- Haruo Okano
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device and its fabricating method
- Patent number 5,582,640
- Issue date Dec 10, 1996
- Kabushiki Kaisha Toshiba
- Takako Okada
- H01 - BASIC ELECTRIC ELEMENTS

Haruo Okano

Person

Patents Grantslast 30 patents

Method for production of semiconductor device

Semiconductor device manufacturing method, manufacturing apparatus,...

Inductive RF plasma reactor with overhead coil and conductive lamin...

Semiconductor device and its fabricating method

Method for production of semiconductor device

Semiconductor device and its fabricating method

Polishing apparatus and method for planarizing layer on a semicondu...

Polishing apparatus and method for planarizing layer on a semicondu...

Magnetron plasma processing apparatus and processing method

Semiconductor device and its fabricating method

Polishing method and polishing apparatus

Method for forming a film on a substrate by activating a reactive gas

Method of manufacturing semiconductor device

Semiconductor device having a metal film formed in a groove in an i...

Method of manufacturing semiconductor device

Method of forming a metal oxide film

Exposure mask, exposure mask substrate, method for fabricating the...

Plasma generating apparatus and surface processing apparatus

Semiconductor device having a single-crystal metal wiring

Magnetron plasma processing apparatus and processing method

Thin film forming method and apparatus

Method of manufacturing semiconductor device

Semiconductor device

Method of making semiconductor integrated-circuit capacitor

Focused ion beam deposition using TMCTS

Exposure mask, exposure mask substrate, method for fabricating the...

Polishing method and polishing apparatus

Semiconductor planarizing apparatus

Method for forming a film on a substrate by activating a reactive gas

Semiconductor device and its fabricating method