Claims
- 1. A semiconductor device comprising:
- an insulator in which there is formed a plurality of groove portions, each of which is kept separate one from the other and having a predetermined shape; and
- single-crystal electrode interconnections, filled in the groove portions, each of which differs in crystal orientation thereof.
- 2. A semiconductor device comprising:
- an insulator in which there is formed a groove portion having a predetermined pattern shape; and
- an electrode interconnection made of a single-crystal metal which is filled in the groove portion, and a wettability improving layer of polycrystalline or amorphous material is formed between the insulator and the single-crystal metal.
- 3. A semiconductor device comprising:
- a first insulator in which there is formed a groove portion having a predetermined pattern shape;
- a second insulator in which there is formed a groove portion having a predetermined pattern shape;
- a first electrode interconnection made of a single-crystal metal which is filled in the groove portion in the first insulator; and
- a second electrode interconnection made of a single-crystal metal which is filled in the groove portion in the second insulator, and the first and second electrode interconnections are connected with a single-crystal metal which has a same crystal orientation as the first and second electrode interconnections.
Priority Claims (5)
Number |
Date |
Country |
Kind |
4-065781 |
Mar 1992 |
JPX |
|
4-192733 |
Jun 1992 |
JPX |
|
4-212380 |
Jul 1992 |
JPX |
|
4-269202 |
Sep 1992 |
JPX |
|
5-067410 |
Mar 1993 |
JPX |
|
Parent Case Info
This is a division of application Ser. No. 08/035,208 filed Mar. 22, 1993, now U.S. Pat. No. 5,409,862.
US Referenced Citations (5)
Foreign Referenced Citations (1)
Number |
Date |
Country |
407133 |
Jan 1990 |
EPX |
Divisions (1)
|
Number |
Date |
Country |
Parent |
35208 |
Mar 1993 |
|