Claims
- 1. A semiconductor device comprising:
- an insulating film formed on a substrate and having a groove;
- a first film formed on a side surface and a bottom surface in said groove;
- a wiring layer formed on said first film; and
- a second film formed on an upper surface of said wiring layer,
- wherein .theta. satisfies a condition 0<.theta.<90.degree., wherein .theta. represents an angle between said side surface of said first film and a tangent line of said upper surface at a contact point between said upper surface of said wiring layer and said side surface of said first film.
- 2. The device according to claim 1, wherein .theta. and .theta.' satisfy the condition .theta.<.theta.', wherein .theta.' represents an angle between said upper surface and a tangent line at the vertex of said upper surface.
- 3. The device according to claim 1, wherein an edge portion of said upper surface close to said contact point in section includes a curvature portion.
- 4. The device according to claim 1, wherein said first film is made of a material selected from the group consisting of Ti, Nb, W, Mo, Cr, V, Ta, Zr, Hf, and nitrides thereof.
- 5. The device according to claim 1, wherein said second film is made of a material selected from the group consisting of Ti, Nb, W, Mo, Cr, V, Ta, Zr, Hf, and nitrides thereof.
- 6. The device according to claim 1, wherein said wiring layer is made of Cu and Ag.
- 7. A semiconductor device comprising:
- insulating film formed on a substrate and having a groove;
- a first film, containing a metal, formed on a side surface and a bottom surface in said groove;
- an oxide film made of an oxide of said metal formed at crystal boundary of said metal;
- a wiring layer formed on said first film.
- 8. The device according to claim 7, wherein an edge portion of said upper surface close to a contact point between said upper surface of said wiring layer and said side surface of said first film in section includes a curvature portion.
- 9. The device according to claim 7, wherein said first film is made of a material selected from the group consisting of Ti, Nb, W, Mo, Cr, V, Ta, Zr, Hf, and nitrides thereof.
- 10. The device according to claim 7, wherein said wiring layer is made of Cu and Ag.
- 11. The device according to claim 7, further comprising a second film formed on an upper surface of said wiring layer.
- 12. The device according to claim 11, wherein said second film is made of a material selected from the group consisting of Ti, Nb, W, Mo, Cr, V, Ta, Zr, Hf, and nitrides thereof.
- 13. The device according to claim 7, wherein .theta. satisfies a condition 0<.theta.<90.degree., wherein .theta. represents an angle between said side surface of said first film and a tangent line of said upper surface at a contact point between said upper surface of said wiring layer and said side surface of said first film.
- 14. A device according to claim 7, wherein .theta. and .theta.' satisfy a condition .theta.<.theta.', wherein .theta.' represents an angle between said upper surface and a tangent line at the vertex of said upper surface.
Priority Claims (2)
Number |
Date |
Country |
Kind |
4-205579 |
Jul 1992 |
JPX |
|
5-183880 |
Jul 1993 |
JPX |
|
CROSS-REFERENCES TO THE RELATED APPLICATIONS
This is a Continuation, of application Ser. No. 08/405,948 filed on Mar. 17, 1995, now patented (U.S. Pat. No. 5,561,082) which is a Continuation-in-Part of application Ser. No. 08/099,695 filed on Jul. 30, 1993, now patented (U.S. Pat. No. 5,424,246).
US Referenced Citations (4)
Continuations (1)
|
Number |
Date |
Country |
Parent |
405948 |
Mar 1995 |
|
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
99695 |
Jul 1993 |
|