Hasan Munir Nayfeh

Person

Poughkeepsie, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Butted SOI junction isolation structures and devices and method of...
- Patent number 9,105,718
- Issue date Aug 11, 2015
- International Business Machines Corporation
- Jeffrey B. Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having undercut-gate-oxide gate stack enclo...
- Patent number 8,754,446
- Issue date Jun 17, 2014
- International Business Machines Corporation
- Xiaomeng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Butted SOI junction isolation structures and devices and method of...
- Patent number 8,741,725
- Issue date Jun 3, 2014
- International Business Machines Corporation
- Jeffrey B. Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement metal gate structure and methods of manufacture
- Patent number 8,642,424
- Issue date Feb 4, 2014
- International Business Machines Corporation
- Sameer H. Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for manufacturing asymmetric devices
- Patent number 8,482,075
- Issue date Jul 9, 2013
- International Business Machines Corporation
- Hasan M. Nayfeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for manufacturing asymmetric devices
- Patent number 8,232,151
- Issue date Jul 31, 2012
- International Business Machines Corporation
- Hasan M. Nayfeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming source and drain of a field-effect-transistor and...
- Patent number 8,084,788
- Issue date Dec 27, 2011
- International Business Machines Corporation
- Judson Robert Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for manufacturing asymmetric devices
- Patent number 8,034,692
- Issue date Oct 11, 2011
- International Business Machines Corporation
- Hasan M. Nayfeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of creating asymmetric field-effect-transistors
- Patent number 8,017,483
- Issue date Sep 13, 2011
- International Business Machines Corporation
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for reducing miller capacitance in field effec...
- Patent number 7,659,172
- Issue date Feb 9, 2010
- International Business Machines Corporation
- Hasan M. Nayfeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor structure
- Patent number 7,491,623
- Issue date Feb 17, 2009
- International Business Machines Corporation
- Xiaomeng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate MOSFET by full semiconductor metal alloy conversion
- Patent number 7,151,023
- Issue date Dec 19, 2006
- International Business Machines Corporation
- Hasan M. Nayfeh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
BUTTED SOI JUNCTION ISOLATION STRUCTURES AND DEVICES AND METHOD OF...
- Publication number 20140203359
- Publication date Jul 24, 2014
- International Business Machines Corporation
- Jeffrey B. Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT METAL GATE STRUCTURE AND METHODS OF MANUFACTURE
- Publication number 20130015580
- Publication date Jan 17, 2013
- International Business Machines Corporation
- SAMEER H JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method for Manufacturing Asymmetric Devices
- Publication number 20120217585
- Publication date Aug 30, 2012
- International Business Machines Corporation
- Hasan M. Nayfeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUTTED SOI JUNCTION ISOLATION STRUCTURES AND DEVICES AND METHOD OF...
- Publication number 20120112280
- Publication date May 10, 2012
- International Business Machines Corporation
- Jeffrey B. Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR MANUFACTURING ASYMMETRIC DEVICES
- Publication number 20110254059
- Publication date Oct 20, 2011
- International Business Machines Corporation
- Hasan M. Nayfeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR MANUFACTURING ASYMMETRIC DEVICES
- Publication number 20110089499
- Publication date Apr 21, 2011
- International Business Machines Corporation
- Hasan M. Nayfeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CREATING ASYMMETRIC FIELD-EFFECT-TRANSISTORS
- Publication number 20100330763
- Publication date Dec 30, 2010
- International Business Machines Corporation
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SOURCE AND DRAIN OF A FIELD-EFFECT-TRANSISTOR AND...
- Publication number 20100090288
- Publication date Apr 15, 2010
- International Business Machines Corporation
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS LINER SURROUNDED FACETLESS EMBEDDED STRESSOR MOSFET
- Publication number 20080157200
- Publication date Jul 3, 2008
- International Business Machines Corporation
- Byeong Y. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MAKING SAME
- Publication number 20080121931
- Publication date May 29, 2008
- International Business Machines Corporation
- Xiaomeng CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MAKING SAME
- Publication number 20080057673
- Publication date Mar 6, 2008
- International Business Machines Corporation
- Xiaomeng CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR REDUCING MILLER CAPACITANCE IN FIELD EFFEC...
- Publication number 20070117334
- Publication date May 24, 2007
- International Business Machines Corporation
- Hasan M. Nayfeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE MOSFET BY FULL SEMICONDUCTOR METAL ALLOY CONVERSION
- Publication number 20070034967
- Publication date Feb 15, 2007
- International Business Machines Corporation
- Hasan M. Nayfeh
- H01 - BASIC ELECTRIC ELEMENTS

Hasan Munir Nayfeh

Person

Patents Grantslast 30 patents

Butted SOI junction isolation structures and devices and method of...

Semiconductor structure having undercut-gate-oxide gate stack enclo...

Butted SOI junction isolation structures and devices and method of...

Replacement metal gate structure and methods of manufacture

Structure and method for manufacturing asymmetric devices

Structure and method for manufacturing asymmetric devices

Method of forming source and drain of a field-effect-transistor and...

Structure and method for manufacturing asymmetric devices

Method of creating asymmetric field-effect-transistors

Structure and method for reducing miller capacitance in field effec...

Method of making a semiconductor structure

Metal gate MOSFET by full semiconductor metal alloy conversion

Patents Applicationslast 30 patents

BUTTED SOI JUNCTION ISOLATION STRUCTURES AND DEVICES AND METHOD OF...

REPLACEMENT METAL GATE STRUCTURE AND METHODS OF MANUFACTURE

Structure and Method for Manufacturing Asymmetric Devices

BUTTED SOI JUNCTION ISOLATION STRUCTURES AND DEVICES AND METHOD OF...

STRUCTURE AND METHOD FOR MANUFACTURING ASYMMETRIC DEVICES

STRUCTURE AND METHOD FOR MANUFACTURING ASYMMETRIC DEVICES

METHOD OF CREATING ASYMMETRIC FIELD-EFFECT-TRANSISTORS

METHOD OF FORMING SOURCE AND DRAIN OF A FIELD-EFFECT-TRANSISTOR AND...

STRESS LINER SURROUNDED FACETLESS EMBEDDED STRESSOR MOSFET

SEMICONDUCTOR STRUCTURE AND METHOD OF MAKING SAME

SEMICONDUCTOR STRUCTURE AND METHOD OF MAKING SAME

STRUCTURE AND METHOD FOR REDUCING MILLER CAPACITANCE IN FIELD EFFEC...

METAL GATE MOSFET BY FULL SEMICONDUCTOR METAL ALLOY CONVERSION