HEIMANU NIEBOJEWSKI

Person

Papeete, FR

People

Patents Grantslast 30 patents

Information Patent Grant
Method for germanium enrichment around the channel of a transistor
- Patent number 11,646,196
- Issue date May 9, 2023
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Heimanu Niebojewski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a microelectronic device
- Patent number 11,631,609
- Issue date Apr 18, 2023
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Heimanu Niebojewski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a mixed substrate
- Patent number 11,387,100
- Issue date Jul 12, 2022
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Heimanu Niebojewski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a transistor
- Patent number 9,978,602
- Issue date May 22, 2018
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Heimanu Niebojewski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with MIS connections and fabricating process
- Patent number 9,831,319
- Issue date Nov 28, 2017
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Julien Borrel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making an integrated circuit
- Patent number 9,240,325
- Issue date Jan 19, 2016
- STMicroelectronics S.A.
- Sébastien Barnola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air-spacer MOS transistor
- Patent number 9,117,805
- Issue date Aug 25, 2015
- STMicroelectronics S.A.
- Heimanu Niebojewski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a transistor
- Patent number 8,980,702
- Issue date Mar 17, 2015
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Heimanu Niebojewski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor layer having at least two differen...
- Patent number 8,962,399
- Issue date Feb 24, 2015
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Maud Vinet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming gate, source, and drain contacts on a MOS transi...
- Patent number 8,822,332
- Issue date Sep 2, 2014
- STMicroelectronics S.A.
- Heimanu Niebojewski
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
EXCHANGE ELECTRODES FOR NETWORK OF QUANTUM DOTS
- Publication number 20240222474
- Publication date Jul 4, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Heimanu NIEBOJEWSKI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FABRICATING OF A QUANTUM DEVICE WITH AUTOALIGNMENT OF THE GATES ON...
- Publication number 20230170402
- Publication date Jun 1, 2023
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Heimanu NIEBOJEWSKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A QUANTUM ELECTRONIC CIRCUIT
- Publication number 20230105807
- Publication date Apr 6, 2023
- COMMISSARIA À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Heimanu NIEBOJEWSKI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
QUANTUM DEVICE INTEGRATING A BURIED METALLIC ELECTRODE
- Publication number 20230063360
- Publication date Mar 2, 2023
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Heimanu NIEBOJEWSKI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD FOR MANUFACTURING SELF-ALIGNED EXCHANGE GATES AND ASSOCIATED...
- Publication number 20220231132
- Publication date Jul 21, 2022
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Heimanu NIEBOJEWSKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR GERMANIUM ENRICHMENT AROUND THE CHANNEL OF A TRANSISTOR
- Publication number 20220068638
- Publication date Mar 3, 2022
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Heimanu NIEBOJEWSKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A MICROELECTRONIC DEVICE
- Publication number 20220028728
- Publication date Jan 27, 2022
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Heimanu NIEBOJEWSKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A MIXED SUBSTRATE
- Publication number 20210090884
- Publication date Mar 25, 2021
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Heimanu NIEBOJEWSKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH MIS CONNECTIONS AND FABRICATING PROCESS
- Publication number 20160260819
- Publication date Sep 8, 2016
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Julien BORREL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING AN INTEGRATED CIRCUIT
- Publication number 20160099326
- Publication date Apr 7, 2016
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- SÉBASTIEN BARNOLA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A TRANSISTOR
- Publication number 20160042955
- Publication date Feb 11, 2016
- COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE. ALT.
- Heimanu NIEBOJEWSKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR-SPACER MOS TRANSISTOR
- Publication number 20150091089
- Publication date Apr 2, 2015
- STMicroelectronics (Crolles 2) SAS
- Heimanu Niebojewski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING AN INTEGRATED CIRCUIT
- Publication number 20150091106
- Publication date Apr 2, 2015
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- SÉBASTIEN BARNOLA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A SEMICONDUCTOR LAYER HAVING AT LEAST TWO DIFFEREN...
- Publication number 20140370666
- Publication date Dec 18, 2014
- COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE. ALT.
- Maud VINET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A TRANSITOR
- Publication number 20140370668
- Publication date Dec 18, 2014
- COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE. ALT.
- Heimanu Niebojewski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A TRANSITOR
- Publication number 20140335663
- Publication date Nov 13, 2014
- COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE. ALT.
- Heimanu NIEBOJEWSKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR-SPACER MOS TRANSISTOR
- Publication number 20140217520
- Publication date Aug 7, 2014
- STMicroelectronics S.A.
- Heimanu Niebojewski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING GATE, SOURCE, AND DRAIN CONTACTS ON A MOS TRANSI...
- Publication number 20130295734
- Publication date Nov 7, 2013
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Heimanu Niebojewski
- H01 - BASIC ELECTRIC ELEMENTS

HEIMANU NIEBOJEWSKI

Person

Patents Grantslast 30 patents

Method for germanium enrichment around the channel of a transistor

Method for manufacturing a microelectronic device

Method for manufacturing a mixed substrate

Method of making a transistor

Transistor with MIS connections and fabricating process

Method for making an integrated circuit

Air-spacer MOS transistor

Method of making a transistor

Method of making a semiconductor layer having at least two differen...

Method for forming gate, source, and drain contacts on a MOS transi...

Patents Applicationslast 30 patents

EXCHANGE ELECTRODES FOR NETWORK OF QUANTUM DOTS

FABRICATING OF A QUANTUM DEVICE WITH AUTOALIGNMENT OF THE GATES ON...

METHOD FOR MANUFACTURING A QUANTUM ELECTRONIC CIRCUIT

QUANTUM DEVICE INTEGRATING A BURIED METALLIC ELECTRODE

METHOD FOR MANUFACTURING SELF-ALIGNED EXCHANGE GATES AND ASSOCIATED...

METHOD FOR GERMANIUM ENRICHMENT AROUND THE CHANNEL OF A TRANSISTOR

METHOD FOR MANUFACTURING A MICROELECTRONIC DEVICE

METHOD FOR MANUFACTURING A MIXED SUBSTRATE

TRANSISTOR WITH MIS CONNECTIONS AND FABRICATING PROCESS

METHOD FOR MAKING AN INTEGRATED CIRCUIT

METHOD OF MAKING A TRANSISTOR

AIR-SPACER MOS TRANSISTOR

METHOD FOR MAKING AN INTEGRATED CIRCUIT

METHOD OF MAKING A SEMICONDUCTOR LAYER HAVING AT LEAST TWO DIFFEREN...

METHOD OF MAKING A TRANSITOR

METHOD OF MAKING A TRANSITOR

AIR-SPACER MOS TRANSISTOR

METHOD FOR FORMING GATE, SOURCE, AND DRAIN CONTACTS ON A MOS TRANSI...