Hideharu Egawa

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having a metal silicide layer connecting two s...
- Patent number 5,061,983
- Issue date Oct 29, 1991
- Tokyo Shibaura Denki Kabushiki Kaisha
- Hideharu Egawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor circuit
- Patent number 5,017,994
- Issue date May 21, 1991
- Tokyo Shibaura Denki Kabushiki Kaisha
- Hideharu Egawa
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Complementary semiconductor device
- Patent number 4,975,757
- Issue date Dec 4, 1990
- Kabushiki Kaisha Toshiba
- Hideharu Egawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density semiconductor circuit using CMOS transistors
- Patent number 4,883,986
- Issue date Nov 28, 1989
- Tokyo Shibaura Denki Kabushiki Kaisha
- Hideharu Egawa
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method of wire bonding with applied insulative coating
- Patent number 4,678,114
- Issue date Jul 7, 1987
- Kabushiki Kaisha Toshiba
- Hideharu Egawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having contacting but electrically isolated re...
- Patent number 4,547,681
- Issue date Oct 15, 1985
- Tokyo Shibaura Denki Kabushiki Kaisha
- Hideharu Egawa
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device having contacting but electrically isolated re...
- Patent number 4,547,790
- Issue date Oct 15, 1985
- Tokyo Shibaura Denki Kabushiki Kaisha
- Hideharu Egawa
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device having contacting but electrically isolated se...
- Patent number 4,491,856
- Issue date Jan 1, 1985
- Tokyo Shibaura Denki Kabushiki Kaisha
- Hideharu Egawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonding wire, semiconductor device having the same, and bonding met...
- Patent number 4,488,674
- Issue date Dec 18, 1984
- Tokyo Shibaura Denki Kabushiki Kaisha
- Hideharu Egawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing complementary semiconductor device
- Patent number 4,280,272
- Issue date Jul 28, 1981
- Tokyo Shibaura Denki Kabushiki Kaisha
- Hideharu Egawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fine object having position and direction sensing mark and a system...
- Patent number 4,209,830
- Issue date Jun 24, 1980
- Tokyo Shibaura Electric Co., Ltd.
- Yoshiaki Arimura
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Complementary semiconductor device
- Patent number 4,209,797
- Issue date Jun 24, 1980
- Tokyo Shibaura Denki Kabushiki Kaisha
- Hideharu Egawa
- H01 - BASIC ELECTRIC ELEMENTS

Hideharu Egawa

Person

Patents Grantslast 30 patents

Semiconductor device having a metal silicide layer connecting two s...

Semiconductor circuit

Complementary semiconductor device

High density semiconductor circuit using CMOS transistors

Method of wire bonding with applied insulative coating

Semiconductor device having contacting but electrically isolated re...

Semiconductor device having contacting but electrically isolated re...

Semiconductor device having contacting but electrically isolated se...

Bonding wire, semiconductor device having the same, and bonding met...

Method for preparing complementary semiconductor device

Fine object having position and direction sensing mark and a system...

Complementary semiconductor device