Hiroji Kawai

Person

Yokohama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Hetero-junction bipolar transistor and electric device
- Patent number 10,014,399
- Issue date Jul 3, 2018
- Powdec K.K.
- Hiroji Kawai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a polarization super junction field eff...
- Patent number 9,991,335
- Issue date Jun 5, 2018
- POWDEC K.K.
- Shoko Echigoya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polarization super-junction low-loss gallium nitride semiconductor...
- Patent number 8,785,976
- Issue date Jul 22, 2014
- The University of Sheffield
- Akira Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and its manufacturing method
- Patent number 6,903,392
- Issue date Jun 7, 2005
- Sony Corporation
- Hiroji Kawai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing a nitride compound semiconductor
- Patent number RE38613
- Issue date Oct 5, 2004
- Sony Corporation
- Hiroji Kawai
- 438 - Semiconductor device manufacturing: process
Information Patent Grant
Semiconductor laminated substrate, semiconductor crystal substrate...
- Patent number 6,750,481
- Issue date Jun 15, 2004
- Sony Corporation
- Hiroji Kawai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate made of a nitride III-V compound semiconduc...
- Patent number 6,501,154
- Issue date Dec 31, 2002
- Sony Corporation
- Etsuo Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and its manufacturing method
- Patent number 6,468,902
- Issue date Oct 22, 2002
- Sony Corporation
- Hiroji Kawai
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of manufacturing a semiconductor laminated substrate, semico...
- Patent number 6,426,264
- Issue date Jul 30, 2002
- Sony Corporation
- Hiroji Kawai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing a nitride compound semiconductor
- Patent number 6,413,312
- Issue date Jul 2, 2002
- Sony Corporation
- Hiroji Kawai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor light emitting device
- Patent number 6,362,016
- Issue date Mar 26, 2002
- Sony Corporation
- Kenji Funato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for nitride III-V compound semiconductor devic...
- Patent number 6,281,032
- Issue date Aug 28, 2001
- Sony Corporation
- Osamu Matsuda
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Manufacturing method of semiconductor device
- Patent number 6,239,033
- Issue date May 29, 2001
- Sony Corporation
- Hiroji Kawai
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and its manufacturing method
- Patent number 6,235,617
- Issue date May 22, 2001
- Sony Corporation
- Hiroji Kawai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing field effect transistor
- Patent number 6,140,169
- Issue date Oct 31, 2000
- Sony Corporation
- Hiroji Kawai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device
- Patent number 6,121,636
- Issue date Sep 19, 2000
- Sony Corporation
- Etsuo Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and its manufacturing method
- Patent number 6,111,273
- Issue date Aug 29, 2000
- Sony Corporation
- Hiroji Kawai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacture of cleaved light emitting semiconductor device
- Patent number 6,107,162
- Issue date Aug 22, 2000
- Sony Corporation
- Etsuo Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor light emitting device
- Patent number 6,081,001
- Issue date Jun 27, 2000
- Sony Corporation
- Kenji Funato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction field effect transistor
- Patent number 6,064,082
- Issue date May 16, 2000
- Sony Corporation
- Hiroji Kawai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing a nitride compound semiconductor
- Patent number 6,043,140
- Issue date Mar 28, 2000
- Sony Corporation
- Hiroji Kawai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor laminating structure
- Patent number 5,981,980
- Issue date Nov 9, 1999
- Sony Corporation
- Takao Miyajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with nitride compound
- Patent number 5,929,467
- Issue date Jul 27, 1999
- Sony Corporation
- Hiroji Kawai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing single crystal III-V compound semiconductor laye...
- Patent number 5,863,811
- Issue date Jan 26, 1999
- Sony Corporation
- Hiroji Kawai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cleaved semiconductor device with {11-20} plane
- Patent number 5,821,568
- Issue date Oct 13, 1998
- Sony Corporation
- Etsuo Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with cleaved surface
- Patent number 5,753,966
- Issue date May 19, 1998
- Sony Corporation
- Etsuo Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for vapor deposition
- Patent number 5,200,021
- Issue date Apr 6, 1993
- Sony Corporation
- Hiroji Kawai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Heterojunction bipolar transistor and the manufacturing method thereof
- Patent number 5,140,399
- Issue date Aug 18, 1992
- Sony Corporation
- Hiroji Kawai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the combustion treatment of toxic gas-containing waste gas
- Patent number 5,123,836
- Issue date Jun 23, 1992
- Chiyoda Corporation
- Noriyuki Yoneda
- F23 - COMBUSTION APPARATUS COMBUSTION PROCESSES
Information Patent Grant
Semiconductor device
- Patent number 5,124,771
- Issue date Jun 23, 1992
- Sony Corporation
- Kenichi Taira
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DIODE, POWER RECEPTION DEVICE AND POWER TRANSMISSION SYSTEM
- Publication number 20240194798
- Publication date Jun 13, 2024
- POWDEC K.K.
- Hiroji KAWAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-OFF MODE POLARIZATION SUPER JUNCTION GaN-BASED FIELD EFFEC...
- Publication number 20240120404
- Publication date Apr 11, 2024
- POWDEC K.K.
- Hiroji KAWAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELEMENT AND DEVICE
- Publication number 20230352573
- Publication date Nov 2, 2023
- Toyoda Gosei Co., Ltd.
- Hisao SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-OFF MODE POLARIZATION SUPER JUNCTION GaN-BASED FIELD EFFEC...
- Publication number 20230170407
- Publication date Jun 1, 2023
- POWDEC K.K.
- Hiroji KAWAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE, METHOD FOR PRODUCING DIODE, AND ELECTRONIC DEVICE
- Publication number 20220238728
- Publication date Jul 28, 2022
- POWDEC K.K.
- Hiroji KAWAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRIC STORAGE MODULE AND ELECTRIC STORAGE MODULE RAPID CHARGING...
- Publication number 20200185930
- Publication date Jun 11, 2020
- KUWATA CO., LTD.
- Tsutomu Kuwata
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
HETERO-JUNCTION BIPOLAR TRANSISTOR AND ELECTRIC DEVICE
- Publication number 20180175182
- Publication date Jun 21, 2018
- POWDEK K.K.
- Hiroji KAWAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELEMENT, ELECTRIC EQUIPMENT, BIDIRECTIONAL FIELD EFFE...
- Publication number 20170263710
- Publication date Sep 14, 2017
- POWDEC K.K.
- Souta MATSUMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, ELECTRIC EQUIPMENT, BIDIRECTIONAL FIELD EFFEC...
- Publication number 20160093691
- Publication date Mar 31, 2016
- POWDEC K.K.
- Shoko ECHIGOYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20130126942
- Publication date May 23, 2013
- POWDEC K. K.
- Akira Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF
- Publication number 20120280363
- Publication date Nov 8, 2012
- POWDEC K. K.
- Yasunobu Sumida
- C30 - CRYSTAL GROWTH
Information Patent Application
Insulating nitride layer and process for its forming, and semicondu...
- Publication number 20050087751
- Publication date Apr 28, 2005
- Fumihiko Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulating nitirde layer and process for its forming, and semicondu...
- Publication number 20020096692
- Publication date Jul 25, 2002
- Fumihiko Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor laminated substrate, semiconductor crystal substrate...
- Publication number 20020088979
- Publication date Jul 11, 2002
- Hiroji Kawai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE
- Publication number 20010048114
- Publication date Dec 6, 2001
- ETSUO MORITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and its manufacturing method
- Publication number 20010040245
- Publication date Nov 15, 2001
- Hiroji Kawai
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor device and its manufacturing method
- Publication number 20010035580
- Publication date Nov 1, 2001
- Hiroji Kawai
- B82 - NANO-TECHNOLOGY

Hiroji Kawai

Person

Patents Grantslast 30 patents

Hetero-junction bipolar transistor and electric device

Semiconductor device having a polarization super junction field eff...

Polarization super-junction low-loss gallium nitride semiconductor...

Semiconductor device and its manufacturing method

Method for growing a nitride compound semiconductor

Semiconductor laminated substrate, semiconductor crystal substrate...

Semiconductor substrate made of a nitride III-V compound semiconduc...

Semiconductor device and its manufacturing method

Method of manufacturing a semiconductor laminated substrate, semico...

Method for growing a nitride compound semiconductor

Semiconductor light emitting device

Manufacturing method for nitride III-V compound semiconductor devic...

Manufacturing method of semiconductor device

Semiconductor device and its manufacturing method

Method for manufacturing field effect transistor

Semiconductor light emitting device

Semiconductor device and its manufacturing method

Method for manufacture of cleaved light emitting semiconductor device

Nitride semiconductor light emitting device

Heterojunction field effect transistor

Method for growing a nitride compound semiconductor

Semiconductor laminating structure

Field effect transistor with nitride compound

Method for growing single crystal III-V compound semiconductor laye...

Cleaved semiconductor device with {11-20} plane

Semiconductor device with cleaved surface

Method and apparatus for vapor deposition

Heterojunction bipolar transistor and the manufacturing method thereof

Method for the combustion treatment of toxic gas-containing waste gas

Semiconductor device

Patents Applicationslast 30 patents

DIODE, POWER RECEPTION DEVICE AND POWER TRANSMISSION SYSTEM

NORMALLY-OFF MODE POLARIZATION SUPER JUNCTION GaN-BASED FIELD EFFEC...

SEMICONDUCTOR ELEMENT AND DEVICE

NORMALLY-OFF MODE POLARIZATION SUPER JUNCTION GaN-BASED FIELD EFFEC...

DIODE, METHOD FOR PRODUCING DIODE, AND ELECTRONIC DEVICE

ELECTRIC STORAGE MODULE AND ELECTRIC STORAGE MODULE RAPID CHARGING...

HETERO-JUNCTION BIPOLAR TRANSISTOR AND ELECTRIC DEVICE

SEMICONDUCTOR ELEMENT, ELECTRIC EQUIPMENT, BIDIRECTIONAL FIELD EFFE...

SEMICONDUCTOR DEVICE, ELECTRIC EQUIPMENT, BIDIRECTIONAL FIELD EFFEC...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF

Insulating nitride layer and process for its forming, and semicondu...

Insulating nitirde layer and process for its forming, and semicondu...

Semiconductor laminated substrate, semiconductor crystal substrate...

SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE

Semiconductor device and its manufacturing method

Semiconductor device and its manufacturing method