Hisayo Momose

Person

Yokohama-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Oxide semiconductor, semiconductor device, semiconductor memory dev...
- Patent number 10,446,651
- Issue date Oct 15, 2019
- Kabushiki Kaisha Toshiba
- Nobuki Kanrei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating semiconductor device
- Patent number 9,318,615
- Issue date Apr 19, 2016
- Kabushiki Kaisha Toshiba
- Tatsuya Ohguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a gate dielectric film which is thinner...
- Patent number 9,196,698
- Issue date Nov 24, 2015
- Kabushiki Kaisha Toshiba
- Kazuya Fukase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid-state imaging device
- Patent number 8,941,158
- Issue date Jan 27, 2015
- Kabushiki Kaisha Toshiba
- Yoshinori Iida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with a thin gate insulating film
- Patent number 7,282,752
- Issue date Oct 16, 2007
- Kabushiki Kaisha Toshiba
- Hisayo Momose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with a thin gate insulating film
- Patent number 6,929,990
- Issue date Aug 16, 2005
- Kabushiki Kaisha Toshiba
- Hisayo Momose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,670,694
- Issue date Dec 30, 2003
- Kabushiki Kaisha Toshiba
- Hisayo Momose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with a thin gate insulating film
- Patent number 6,642,560
- Issue date Nov 4, 2003
- Kabushiki Kaisha Toshiba
- Hisayo Momose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with a thin gate insulating film
- Patent number 6,410,952
- Issue date Jun 25, 2002
- Kabushiki Kaisha Toshiba
- Hisayo Momose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with a thin gate insulating film
- Patent number 6,229,164
- Issue date May 8, 2001
- Kabushiki Kaisha Toshiba
- Hisayo Momose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with a thin gate insulating film
- Patent number 5,990,516
- Issue date Nov 23, 1999
- Kabushiki Kaisha Toshiba
- Hisayo Momose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 5,955,761
- Issue date Sep 21, 1999
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with solid phase diffusion source
- Patent number 5,903,027
- Issue date May 11, 1999
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having solid phase diffusion sources
- Patent number 5,898,203
- Issue date Apr 27, 1999
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with side wall conductor film
- Patent number 5,780,901
- Issue date Jul 14, 1998
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,766,965
- Issue date Jun 16, 1998
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with solid phase diffusion source
- Patent number 5,698,881
- Issue date Dec 16, 1997
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device in which threshold volt...
- Patent number 5,489,542
- Issue date Feb 6, 1996
- Kabushiki Kaisha Toshiba
- Hiroshi Iwai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,434,440
- Issue date Jul 18, 1995
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with nitrided gate insulating film
- Patent number 5,237,188
- Issue date Aug 17, 1993
- Kabushiki Kaisha Toshiba
- Hiroshi Iwai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having a ferroelectric substance as a m...
- Patent number 5,227,855
- Issue date Jul 13, 1993
- Kabushiki Kaisha Toshiba
- Hisayo S. Momose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including bipolar transistor with step impurit...
- Patent number 5,198,692
- Issue date Mar 30, 1993
- Kabushiki Kaisha Toshiba
- Hisayo Momose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 5,106,782
- Issue date Apr 21, 1992
- Kabushiki Kaisha Toshiba
- Tadashi Matsuno
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
OXIDE SEMICONDUCTOR, SEMICONDUCTOR DEVICE, SEMICONDUCTOR MEMORY DEV...
- Publication number 20180076292
- Publication date Mar 15, 2018
- KABUSHIKI KAISHA TOSHIBA
- Nobuki KANREI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM TRANSISTOR, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACT...
- Publication number 20160380115
- Publication date Dec 29, 2016
- KABUSHIKI KAISHA TOSHIBA
- Shintaro NAKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20160284746
- Publication date Sep 29, 2016
- Kabushiki Kaisha Toshiba
- Kazuya FUKASE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20160093742
- Publication date Mar 31, 2016
- Kabushiki Kaisha Toshiba
- Hisayo MOMOSE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20150249156
- Publication date Sep 3, 2015
- Kabushiki Kaisha Toshiba
- Tatsuya OHGURO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20150048359
- Publication date Feb 19, 2015
- Kabushiki Kaisha Toshiba
- Kazuya FUKASE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20140246666
- Publication date Sep 4, 2014
- Kabushiki Kaisha Toshiba
- Tetsu MOROOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20140239289
- Publication date Aug 28, 2014
- EPAS
- Tetsu MOROOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOLID-STATE IMAGE SENSING DEVICE
- Publication number 20120235271
- Publication date Sep 20, 2012
- Kabushiki Kaisha Toshiba
- Hisayo MOMOSE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOLID-STATE IMAGING DEVICE
- Publication number 20110220976
- Publication date Sep 15, 2011
- Kabushiki Kaisha Toshiba
- Yoshinori IIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH A THIN GATE INSULATING FILM
- Publication number 20080048250
- Publication date Feb 28, 2008
- Kabushiki Kaisha Toshiba
- Hisayo Momose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET with a thin gate insulating film
- Publication number 20050224898
- Publication date Oct 13, 2005
- Kabushiki Kaisha Toshiba
- Hisayo Momose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET with a thin gate insulating film
- Publication number 20040070024
- Publication date Apr 15, 2004
- Kabushiki Kaisha Toshiba
- Hisayo Momose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20020185676
- Publication date Dec 12, 2002
- Hisayo Momose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mosfet with a thin gate insulating film
- Publication number 20020145157
- Publication date Oct 10, 2002
- Kabushiki Kaisha Toshiba
- Hisayo Momose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mosfet with a thin gate insulating film
- Publication number 20010042873
- Publication date Nov 22, 2001
- Hisayo Momose
- H01 - BASIC ELECTRIC ELEMENTS

Hisayo Momose

Person

Patents Grantslast 30 patents

Oxide semiconductor, semiconductor device, semiconductor memory dev...

Semiconductor device and method for fabricating semiconductor device

Semiconductor device having a gate dielectric film which is thinner...

Solid-state imaging device

MOSFET with a thin gate insulating film

MOSFET with a thin gate insulating film

Semiconductor device

MOSFET with a thin gate insulating film

MOSFET with a thin gate insulating film

MOSFET with a thin gate insulating film

MOSFET with a thin gate insulating film

Semiconductor device and manufacturing method thereof

MOSFET with solid phase diffusion source

Semiconductor device having solid phase diffusion sources

Semiconductor device with side wall conductor film

Semiconductor device and method of manufacturing the same

MOSFET with solid phase diffusion source

Method for fabricating semiconductor device in which threshold volt...

Semiconductor device and method of manufacturing the same

Semiconductor device with nitrided gate insulating film

Semiconductor memory device having a ferroelectric substance as a m...

Semiconductor device including bipolar transistor with step impurit...

Method of manufacturing a semiconductor device

Patents Applicationslast 30 patents

OXIDE SEMICONDUCTOR, SEMICONDUCTOR DEVICE, SEMICONDUCTOR MEMORY DEV...

THIN FILM TRANSISTOR, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACT...

SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SOLID-STATE IMAGE SENSING DEVICE

SOLID-STATE IMAGING DEVICE

MOSFET WITH A THIN GATE INSULATING FILM

MOSFET with a thin gate insulating film

MOSFET with a thin gate insulating film

Semiconductor device

Mosfet with a thin gate insulating film

Mosfet with a thin gate insulating film