Ho-Yuan Yu

Person

Saratoga, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Deep trench MOS barrier junction all around rectifier and MOSFET
- Patent number 10,770,599
- Issue date Sep 8, 2020
- Champion Microelectronic Corp.
- Haiping Dun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High speed Schottky rectifier
- Patent number 10,304,971
- Issue date May 28, 2019
- Champion Microelectronic Corp.
- Ho-Yuan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET having a JFET embedded as a body diode
- Patent number 8,916,929
- Issue date Dec 23, 2014
- Power Integrations, Inc.
- Jian Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for chip thermal stress relief
- Patent number 8,836,104
- Issue date Sep 16, 2014
- Ho-Yuan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fast recovery reduced p-n junction rectifier
- Patent number 8,669,554
- Issue date Mar 11, 2014
- Ho-Yuan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET having a JFET embedded as a body diode
- Patent number 8,097,512
- Issue date Jan 17, 2012
- Power Integrations, Inc.
- Jian Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for dynamic modulation
- Patent number 8,085,106
- Issue date Dec 27, 2011
- Muzahid Bin Huda
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Bipolar transistor with depleted emitter
- Patent number 7,911,033
- Issue date Mar 22, 2011
- Ho-Yuan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fast recovery reduced p-n junction rectifier
- Patent number 7,880,166
- Issue date Feb 1, 2011
- Ho-Yuan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistors with depleted emitter
- Patent number 7,795,103
- Issue date Sep 14, 2010
- Ho-Yuan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable junction field effect transistor and method for progra...
- Patent number 7,655,964
- Issue date Feb 2, 2010
- Qspeed Semiconductor Inc.
- Chong-Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 7,608,888
- Issue date Oct 27, 2009
- Qspeed Semiconductor Inc.
- Jian Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for a junction field effect transistor with reduced gate cap...
- Patent number 7,452,763
- Issue date Nov 18, 2008
- Qspeed Semiconductor Inc.
- Ho-Yuan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET having a JFET embedded as a body diode
- Patent number 7,417,266
- Issue date Aug 26, 2008
- Qspeed Semiconductor Inc.
- Jian Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for reduced gate capacitance in a JFET
- Patent number 7,268,378
- Issue date Sep 11, 2007
- Qspeed Semiconductor Inc.
- Ho-Yuan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for composite trench fill
- Patent number 7,265,398
- Issue date Sep 4, 2007
- Qspeed Semiconductor Inc.
- Ho-Yuan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
JFET and MESFET structures for low voltage, high current and high f...
- Patent number 7,262,461
- Issue date Aug 28, 2007
- Qspeed Semiconductor Inc.
- Ho-Yuan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier rectifier and method of manufacturing the same
- Patent number 7,238,976
- Issue date Jul 3, 2007
- Qspeed Semiconductor Inc.
- Ho-Yuan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for enhanced performance in semiconductor subs...
- Patent number 7,227,242
- Issue date Jun 5, 2007
- Qspeed Semiconductor Inc.
- Chong Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a Schottky barrier rectifier
- Patent number 7,220,661
- Issue date May 22, 2007
- Qspeed Semiconductor Inc.
- Ho-Yuan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple doped channel in a multiple doped gate junction field effe...
- Patent number 7,211,845
- Issue date May 1, 2007
- Qspeed Semiconductor, Inc.
- Ho-Yuan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buck-boost circuit with normally off JFET
- Patent number 7,098,634
- Issue date Aug 29, 2006
- Lovoltech, Inc.
- Ho-Yuan Yu
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Programmable junction field effect transistor and method for progra...
- Patent number 7,075,132
- Issue date Jul 11, 2006
- Lovoltech, Inc.
- Chong Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
JFET and MESFET structures for low voltage high current and high fr...
- Patent number 7,045,397
- Issue date May 16, 2006
- Lovoltech, Inc.
- Ho-Yuan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual gate structure for a FET and method for fabricating same
- Patent number 7,038,260
- Issue date May 2, 2006
- Lovoltech, Incorporated
- Ho-Yuan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Guard ring structure and method for fabricating same
- Patent number 7,009,228
- Issue date Mar 7, 2006
- Lovoltech, Incorporated
- Ho-Yuan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge protection device for integrated circuits
- Patent number 7,009,229
- Issue date Mar 7, 2006
- Lovoltech, Incorporated
- Chong Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for double dose gate in a JFET
- Patent number 6,995,052
- Issue date Feb 7, 2006
- Lovoltech, Inc.
- Ho-Yuan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Starter device for normally off JFETs
- Patent number 6,975,157
- Issue date Dec 13, 2005
- Lovoltech, Inc.
- Ho-Yuan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
JFET and MESFET structures for low voltage, high current and high f...
- Patent number 6,921,932
- Issue date Jul 26, 2005
- Lovoltech, Inc.
- Ho-Yuan Yu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Deep Trench Surrounded MOSFET with Planar MOS Gate
- Publication number 20200373438
- Publication date Nov 26, 2020
- Champion Microelectronic Corp.
- Haiping Dun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double Trench MOSFET With Trench Gate
- Publication number 20200373439
- Publication date Nov 26, 2020
- Champion Microelectronic Corp.
- Haiping Dun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deep Trench MOS Barrier Junction All Around Rectifier and MOSFET
- Publication number 20180138322
- Publication date May 17, 2018
- Yutechnix, Inc.
- Haiping Dun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Speed Schottky Rectifier
- Publication number 20180019348
- Publication date Jan 18, 2018
- Yutechnix, Inc.
- Ho-Yuan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus for Chip Thermal Stress Relief
- Publication number 20130228912
- Publication date Sep 5, 2013
- Ho-Yuan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fast Recovery Reduced P-N Junction Rectifier
- Publication number 20120104456
- Publication date May 3, 2012
- Ho-Yuan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET having a JFET embedded as a body diode
- Publication number 20110298016
- Publication date Dec 8, 2011
- Power Integrations, Inc.
- Jian Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Fast Recovery Rectifier
- Publication number 20110076840
- Publication date Mar 31, 2011
- Ho-Yuan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar Transistor with Depleted Emitter
- Publication number 20100283082
- Publication date Nov 11, 2010
- Ho-Yuan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LED Dimming Techniques Using Spread Spectrum Modulation
- Publication number 20100109550
- Publication date May 6, 2010
- Muzahid Bin Huda
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
Method and Apparatus for Dynamic Modulation
- Publication number 20100090775
- Publication date Apr 15, 2010
- Muzahid Bin Huda
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
MOSFET Having a JFET Embedded as a Body Diode
- Publication number 20080277695
- Publication date Nov 13, 2008
- Jian Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar transistors with depleted emitter
- Publication number 20070267656
- Publication date Nov 22, 2007
- Ho-Yuan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DMOSFET with current injection
- Publication number 20070267690
- Publication date Nov 22, 2007
- Ho-Yuan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fast recovery rectifier
- Publication number 20070262304
- Publication date Nov 15, 2007
- Ho-Yuan Yu
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Deep trench MOS barrier junction all around rectifier and MOSFET

High speed Schottky rectifier

MOSFET having a JFET embedded as a body diode

Apparatus for chip thermal stress relief

Fast recovery reduced p-n junction rectifier

MOSFET having a JFET embedded as a body diode

Method and apparatus for dynamic modulation

Bipolar transistor with depleted emitter

Fast recovery reduced p-n junction rectifier

Bipolar transistors with depleted emitter

Programmable junction field effect transistor and method for progra...

Field effect transistor

Method for a junction field effect transistor with reduced gate cap...

MOSFET having a JFET embedded as a body diode

Structure for reduced gate capacitance in a JFET

Method and structure for composite trench fill

JFET and MESFET structures for low voltage, high current and high f...

Schottky barrier rectifier and method of manufacturing the same

Structure and method for enhanced performance in semiconductor subs...

Method of manufacturing a Schottky barrier rectifier

Multiple doped channel in a multiple doped gate junction field effe...

Buck-boost circuit with normally off JFET

Programmable junction field effect transistor and method for progra...

JFET and MESFET structures for low voltage high current and high fr...

Dual gate structure for a FET and method for fabricating same

Guard ring structure and method for fabricating same

Electrostatic discharge protection device for integrated circuits

Method and structure for double dose gate in a JFET

Starter device for normally off JFETs

JFET and MESFET structures for low voltage, high current and high f...

Patents Applicationslast 30 patents

Deep Trench Surrounded MOSFET with Planar MOS Gate

Double Trench MOSFET With Trench Gate

Deep Trench MOS Barrier Junction All Around Rectifier and MOSFET

High Speed Schottky Rectifier

Apparatus for Chip Thermal Stress Relief

Fast Recovery Reduced P-N Junction Rectifier

MOSFET having a JFET embedded as a body diode

Method of Manufacturing a Fast Recovery Rectifier

Bipolar Transistor with Depleted Emitter

LED Dimming Techniques Using Spread Spectrum Modulation

Method and Apparatus for Dynamic Modulation

MOSFET Having a JFET Embedded as a Body Diode

Bipolar transistors with depleted emitter

DMOSFET with current injection

Fast recovery rectifier