Hsing-Huang Tseng

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
In-situ nitridation of high-k dielectrics
- Patent number 7,704,821
- Issue date Apr 27, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Dina H. Triyoso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a nitrided gate dielectric
- Patent number 7,402,472
- Issue date Jul 22, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Sangwoo Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transitional dielectric layer to improve reliability and performanc...
- Patent number 7,235,502
- Issue date Jun 26, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Sriram S. Kalpat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an electronic device
- Patent number 7,214,590
- Issue date May 8, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Sangwoo Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer dielectric containing diffusion barrier material
- Patent number 7,144,825
- Issue date Dec 5, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Olubunmi O. Adetutu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a layer using a purging gas in a semiconductor p...
- Patent number 7,015,153
- Issue date Mar 21, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Dina H. Triyoso
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of making a high quality thin dielectric layer
- Patent number 7,001,852
- Issue date Feb 21, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Tien-Ying Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming dual metal gate structures
- Patent number 6,902,969
- Issue date Jun 7, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Olubunmi O. Adetutu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radical oxidation and/or nitridation during metal oxide layer depos...
- Patent number 6,884,685
- Issue date Apr 26, 2005
- Freescale Semiconductors, Inc.
- Tien Ying Luo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming a dual gate oxide device using a metal oxide and...
- Patent number 6,787,421
- Issue date Sep 7, 2004
- FREESCALE SEMICONDUCTOR, INC.
- David C. Gilmer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with layered high-K gate dielectric and method therefor
- Patent number 6,717,226
- Issue date Apr 6, 2004
- Motorola, Inc.
- Rama I. Hegde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plated metal transistor gate and method of formation
- Patent number 6,686,282
- Issue date Feb 3, 2004
- Motorola, Inc.
- Cindy Simpson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a semiconductor device
- Patent number 6,297,173
- Issue date Oct 2, 2001
- Motorola, Inc.
- Philip J. Tobin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a thin oxide for use in semiconductor inte...
- Patent number 6,146,948
- Issue date Nov 14, 2000
- Motorola Inc.
- Wei Edwin Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a high dielectric constant gate oxide for...
- Patent number 6,063,698
- Issue date May 16, 2000
- Motorola, Inc.
- Hsing-Huang Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a semiconductor device
- Patent number 5,972,804
- Issue date Oct 26, 1999
- Motorola, Inc.
- Philip J. Tobin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a dual-thickness gate oxide layer using a nitride...
- Patent number 5,960,289
- Issue date Sep 28, 1999
- Motorola, Inc.
- Paul G. Y. Tsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for reducing halogen concentration in a material layer duri...
- Patent number 5,830,802
- Issue date Nov 3, 1998
- Motorola Inc.
- Hsing-Huang Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having a jet vapor deposition silicon nitride fi...
- Patent number 5,731,238
- Issue date Mar 24, 1998
- Motorola Inc.
- Craig Allan Cavins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of formation of semiconductor gate dielectric
- Patent number 5,726,087
- Issue date Mar 10, 1998
- Motorola, Inc.
- Hsing-Huang Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a reverse dielectric stack
- Patent number 5,712,177
- Issue date Jan 27, 1998
- Motorola, Inc.
- Vidya S. Kaushik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of formation of semiconductor composite gate dielectric hav...
- Patent number 5,712,208
- Issue date Jan 27, 1998
- Motorola, Inc.
- Hsing-Huang Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming field isolation
- Patent number 5,707,889
- Issue date Jan 13, 1998
- Motorola Inc.
- Ting Chen Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming field isolation and a structure over a semicond...
- Patent number 5,580,815
- Issue date Dec 3, 1996
- Motorola Inc.
- Ting C. Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a fluorinated nitrogen containing dielectric
- Patent number 5,571,734
- Issue date Nov 5, 1996
- Motorola, Inc.
- Hsing-Huang Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating a MOSFET device having reduced reverse shor...
- Patent number 5,552,332
- Issue date Sep 3, 1996
- Motorola, Inc.
- Hsing-Huang Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to incorporate nitrogen at an interface of a dielectric lay...
- Patent number 5,464,792
- Issue date Nov 7, 1995
- Motorola, Inc.
- Hsing-Huang Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolator structure in an integrated circuit
- Patent number 5,436,488
- Issue date Jul 25, 1995
- Motorola Inc.
- Stephen S. Poon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming trench isolation structure in an integrated circuit
- Patent number 5,387,540
- Issue date Feb 7, 1995
- Motorola Inc.
- Stephen S. Poon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating paired MOS transistors having a current-gain...
- Patent number 5,371,026
- Issue date Dec 6, 1994
- Motorola Inc.
- James D. Hayden
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
In-situ nitridation of high-k dielectrics
- Publication number 20060273411
- Publication date Dec 7, 2006
- Freescale Semiconductor, Inc.
- Dina H. Triyoso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a semiconductor device having a high-k dielectric
- Publication number 20060234436
- Publication date Oct 19, 2006
- Hsing H. Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming an electronic device
- Publication number 20060223266
- Publication date Oct 5, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Sangwoo Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transitional dielectric layer to improve reliability and performanc...
- Publication number 20060220157
- Publication date Oct 5, 2006
- Freescale Semiconductor, Inc.
- Sriram S. Kalpat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of making a nitrided gate dielectric
- Publication number 20060194423
- Publication date Aug 31, 2006
- Sangwoo Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming gas anneal process for high dielectric constant gate dielec...
- Publication number 20060094259
- Publication date May 4, 2006
- Freescale Semiconductor, Inc.
- David C. Gilmer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma impurification of a metal gate in a semiconductor fabricatio...
- Publication number 20060084217
- Publication date Apr 20, 2006
- Freescale Semiconductor, Inc.
- Tien Ying Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High quality thin dielectric layer and method of making same
- Publication number 20050245019
- Publication date Nov 3, 2005
- Tien-Ying Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-layer dielectric containing diffusion barrier material
- Publication number 20050085092
- Publication date Apr 21, 2005
- Olubunmi O. Adetutu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR FORMING DUAL METAL GATE STRUCTURES
- Publication number 20050026345
- Publication date Feb 3, 2005
- Olubunmi O. Adetutu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Radical oxidation and/or nitridation during metal oxide layer depos...
- Publication number 20040161899
- Publication date Aug 19, 2004
- Tien Ying Luo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for forming a dual gate oxide device using a metal oxide and...
- Publication number 20040032001
- Publication date Feb 19, 2004
- David C. Gilmer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate dielectric and method therefor
- Publication number 20030176049
- Publication date Sep 18, 2003
- Rama I. Hegde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for making a semiconductor device
- Publication number 20020187651
- Publication date Dec 12, 2002
- Kimberly G. Reid
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO LOCATE PARTICLES OF A PREDETERMINED SPECIES WITHIN A SOLI...
- Publication number 20010003381
- Publication date Jun 14, 2001
- MARIUS ORLOWSKI
- H01 - BASIC ELECTRIC ELEMENTS

Hsing-Huang Tseng

Person

Patents Grantslast 30 patents

In-situ nitridation of high-k dielectrics

Method of making a nitrided gate dielectric

Transitional dielectric layer to improve reliability and performanc...

Method of forming an electronic device

Multi-layer dielectric containing diffusion barrier material

Method for forming a layer using a purging gas in a semiconductor p...

Method of making a high quality thin dielectric layer

Process for forming dual metal gate structures

Radical oxidation and/or nitridation during metal oxide layer depos...

Method for forming a dual gate oxide device using a metal oxide and...

Transistor with layered high-K gate dielectric and method therefor

Plated metal transistor gate and method of formation

Process for forming a semiconductor device

Method for manufacturing a thin oxide for use in semiconductor inte...

Method for manufacturing a high dielectric constant gate oxide for...

Process for forming a semiconductor device

Method for making a dual-thickness gate oxide layer using a nitride...

Process for reducing halogen concentration in a material layer duri...

Integrated circuit having a jet vapor deposition silicon nitride fi...

Method of formation of semiconductor gate dielectric

Method for forming a reverse dielectric stack

Methods of formation of semiconductor composite gate dielectric hav...

Process for forming field isolation

Process for forming field isolation and a structure over a semicond...

Method for forming a fluorinated nitrogen containing dielectric

Process for fabricating a MOSFET device having reduced reverse shor...

Process to incorporate nitrogen at an interface of a dielectric lay...

Trench isolator structure in an integrated circuit

Method of forming trench isolation structure in an integrated circuit

Method for fabricating paired MOS transistors having a current-gain...

Patents Applicationslast 30 patents

In-situ nitridation of high-k dielectrics

Method of forming a semiconductor device having a high-k dielectric

Method of forming an electronic device

Transitional dielectric layer to improve reliability and performanc...

Method of making a nitrided gate dielectric

Forming gas anneal process for high dielectric constant gate dielec...

Plasma impurification of a metal gate in a semiconductor fabricatio...

High quality thin dielectric layer and method of making same

Multi-layer dielectric containing diffusion barrier material

PROCESS FOR FORMING DUAL METAL GATE STRUCTURES

Radical oxidation and/or nitridation during metal oxide layer depos...

Method for forming a dual gate oxide device using a metal oxide and...

Gate dielectric and method therefor

Method for making a semiconductor device

METHOD TO LOCATE PARTICLES OF A PREDETERMINED SPECIES WITHIN A SOLI...