Ing-Ruey Liaw

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor ROM device and manufacturing method thereof
- Patent number 7,589,990
- Issue date Sep 15, 2009
- Taiwan Imagingtek Corporation
- Chih-Ta Star Sung
- G11 - INFORMATION STORAGE
Information Patent Grant
Fabrication method for flash memory source line and flash memory
- Patent number 7,129,134
- Issue date Oct 31, 2006
- Vanguard International Semiconductor Corporation
- Jui-Hsiang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a polysilicon spacer with a vertical profile
- Patent number 6,762,096
- Issue date Jul 13, 2004
- Vanguard International Semiconductor Corporation
- Fsien-Fu Meng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacture of a crown or stack capacitor with a monolith...
- Patent number 6,555,433
- Issue date Apr 29, 2003
- Vanguard International Semiconductor Corporation
- Ing-Ruey Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crown or stack capacitor with a monolithic fin structure
- Patent number 6,476,437
- Issue date Nov 5, 2002
- Vanguard International Semiconductor Corp.
- Ing-Ruey Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making polycide-to-polycide low contact resistance conta...
- Patent number 6,351,037
- Issue date Feb 26, 2002
- Vanguard International Semiconductor Corporation
- Ing-Ruey Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacture of crown or stack capacitor with a monolithi...
- Patent number 6,344,392
- Issue date Feb 5, 2002
- Vanguard International Semiconductor Corporation
- Ing-Ruey Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a low resistance Poly-Si/metal gate
- Patent number 6,277,719
- Issue date Aug 21, 2001
- Vanguard International Semiconductor Corporation
- Jin-Dong Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method to approach the conducting structure of a DRAM c...
- Patent number 6,249,018
- Issue date Jun 19, 2001
- Vanguard International Semiconductor Corporation
- Ing-Ruey Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tungsten bit line structure featuring a sandwich capping layer
- Patent number 6,239,014
- Issue date May 29, 2001
- Vanguard International Semiconductor Corporation
- Ing-Ruey Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolator via non-critical chemical mechanical polishing
- Patent number 6,171,929
- Issue date Jan 9, 2001
- Vanguard International Semiconductor Corporation
- Fu-Liang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating crown-shaped capacitor structures
- Patent number 6,168,987
- Issue date Jan 2, 2001
- Vanguard International Semiconductor Corp.
- Erik S. Jeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making polycide-to-polycide low contact resistance conta...
- Patent number 6,150,247
- Issue date Nov 21, 2000
- Vanguard International Semiconductor Corporation
- Ing-Ruey Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating capacitor-over-bit-line dynamic random acces...
- Patent number 6,136,643
- Issue date Oct 24, 2000
- Vanguard International Semiconductor Company
- Erik S. Jeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Design and a novel process for formation of DRAM bit line and capac...
- Patent number 6,133,599
- Issue date Oct 17, 2000
- Vanguard International Semiconductor Corporation
- Jan Mye Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming landing plugs for PMOS and NMOS
- Patent number 6,087,253
- Issue date Jul 11, 2000
- Vanguard International Semiconductor Corporation
- Ing-Ruey Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma-enhanced chemical vapor deposited SIO.sub.2 /SI.sub.3 N.sub....
- Patent number 6,017,614
- Issue date Jan 25, 2000
- Vanguard International Semiconductor Corporation
- Kwong-Jr Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Design and a novel process for formation of DRAM bit line and capac...
- Patent number 6,008,085
- Issue date Dec 28, 1999
- Vanguard International Semiconductor Corporation
- Janmye Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for simultaneous formation of contacts between metal layers...
- Patent number 6,008,075
- Issue date Dec 28, 1999
- Vanguard International Semiconductor Corporation
- Wah-Yih Lien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacture of a shallow trench isolation device by exposing negati...
- Patent number 5,998,279
- Issue date Dec 7, 1999
- Vanguard International Semiconductor Corporation
- Ing-Ruey Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for crown type capacitor in dynamic random access memory
- Patent number 5,956,587
- Issue date Sep 21, 1999
- Vanguard International Semiconductor Corporation
- Li Yeat Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making greek letter psi shaped capacitor for DRAM circuits
- Patent number 5,923,973
- Issue date Jul 13, 1999
- Vanguard International Semiconductor Corporation
- Li Yeat Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDD spacers in MOS devices with double spacers
- Patent number 5,905,293
- Issue date May 18, 1999
- Vanguard International Semiconductor Corporation
- Erik S. Jeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Small contacts for ultra large scale integration semiconductor devi...
- Patent number 5,874,359
- Issue date Feb 23, 1999
- Industrial Technology Research Institute
- Ing-Ruey Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a plasma-enhanced chemical vapor deposited SiO.su...
- Patent number 5,851,603
- Issue date Dec 22, 1998
- Vanguard International Semiconductor Corporation
- Kwong-Jr Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a capacitor using a silicon oxynitride etching s...
- Patent number 5,837,576
- Issue date Nov 17, 1998
- Vanguard International Semiconductor Corporation
- Li-Yeat Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating high density integrated circuits using oxide...
- Patent number 5,792,687
- Issue date Aug 11, 1998
- Vanguard International Semiconductor Corporation
- Erik S. Jeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating LDD spacers in MOS devices with double spacer...
- Patent number 5,763,312
- Issue date Jun 9, 1998
- Vanguard International Semiconductor Corporation
- Erik S. Jeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a multiple walled crown capacitor of a semic...
- Patent number 5,712,202
- Issue date Jan 27, 1998
- Vanguard International Semiconductor Corporation
- Ing-Ruey Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming interconnections and conductors for high density...
- Patent number 5,710,073
- Issue date Jan 20, 1998
- Vanguard International Semiconductor Corporation
- Erik S. Jeng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Non-volatile memory and method of fabricating the same
- Publication number 20080135915
- Publication date Jun 12, 2008
- Vanguard International Semiconductor Corporation
- Ing-Ruey Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor ROM device and manufacturing method thereof
- Publication number 20060120133
- Publication date Jun 8, 2006
- Chih-Ta Star Sung
- G11 - INFORMATION STORAGE
Information Patent Application
Fabrication method for flash memory source line and flash memory
- Publication number 20050181563
- Publication date Aug 18, 2005
- Vanguard International Semiconductor Corporation
- Jui-Hsiang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a self-align contact with a disposable spacer
- Publication number 20020132403
- Publication date Sep 19, 2002
- Cheng-Yu Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacture of a crown or stack capacitor with a monolith...
- Publication number 20010034114
- Publication date Oct 25, 2001
- Vanguard International Semiconductor Corporation
- Ing-Ruey Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Crown or stack capacitor with a monolithic fin structure
- Publication number 20010031531
- Publication date Oct 18, 2001
- Vanguard International Semiconductor Corporation
- Ing-Ruey Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD TO APPROACH THE CONDUCTING STRUCTURE OF A DRAM C...
- Publication number 20010010958
- Publication date Aug 2, 2001
- Vanguard International Semiconductor Corporation
- Ing-Ruey Liaw
- H01 - BASIC ELECTRIC ELEMENTS

Ing-Ruey Liaw

Person

Patents Grantslast 30 patents

Semiconductor ROM device and manufacturing method thereof

Fabrication method for flash memory source line and flash memory

Method for forming a polysilicon spacer with a vertical profile

Method of manufacture of a crown or stack capacitor with a monolith...

Crown or stack capacitor with a monolithic fin structure

Method for making polycide-to-polycide low contact resistance conta...

Methods of manufacture of crown or stack capacitor with a monolithi...

Method for fabricating a low resistance Poly-Si/metal gate

Fabrication method to approach the conducting structure of a DRAM c...

Tungsten bit line structure featuring a sandwich capping layer

Shallow trench isolator via non-critical chemical mechanical polishing

Method for fabricating crown-shaped capacitor structures

Method for making polycide-to-polycide low contact resistance conta...

Method for fabricating capacitor-over-bit-line dynamic random acces...

Design and a novel process for formation of DRAM bit line and capac...

Method of forming landing plugs for PMOS and NMOS

Plasma-enhanced chemical vapor deposited SIO.sub.2 /SI.sub.3 N.sub....

Design and a novel process for formation of DRAM bit line and capac...

Method for simultaneous formation of contacts between metal layers...

Manufacture of a shallow trench isolation device by exposing negati...

Method for crown type capacitor in dynamic random access memory

Method of making greek letter psi shaped capacitor for DRAM circuits

LDD spacers in MOS devices with double spacers

Small contacts for ultra large scale integration semiconductor devi...

Method for making a plasma-enhanced chemical vapor deposited SiO.su...

Method for forming a capacitor using a silicon oxynitride etching s...

Method for fabricating high density integrated circuits using oxide...

Method of fabricating LDD spacers in MOS devices with double spacer...

Method for fabricating a multiple walled crown capacitor of a semic...

Method for forming interconnections and conductors for high density...

Patents Applicationslast 30 patents

Non-volatile memory and method of fabricating the same

Semiconductor ROM device and manufacturing method thereof

Fabrication method for flash memory source line and flash memory

Method of fabricating a self-align contact with a disposable spacer

Method of manufacture of a crown or stack capacitor with a monolith...

Crown or stack capacitor with a monolithic fin structure

FABRICATION METHOD TO APPROACH THE CONDUCTING STRUCTURE OF A DRAM C...