Injo Ok

Person

Loudonville, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Wrap-around projection liner for AI device
- Patent number 12,010,930
- Issue date Jun 11, 2024
- International Business Machines Corporation
- Injo Ok
Information Patent Grant
Confined bridge cell phase change memory
- Patent number 11,980,111
- Issue date May 7, 2024
- International Business Machines Corporation
- Injo Ok
Information Patent Grant
Contact resistance of a metal liner in a phase change memory cell
- Patent number 11,957,069
- Issue date Apr 9, 2024
- International Business Machines Corporation
- Injo Ok
Information Patent Grant
Phase change memory cell spacer
- Patent number 11,930,724
- Issue date Mar 12, 2024
- International Business Machines Corporation
- Injo Ok
Information Patent Grant
Multi-layer phase change memory device
- Patent number 11,889,773
- Issue date Jan 30, 2024
- International Business Machines Corporation
- Kevin W. Brew
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Phase change memory cell galvanic corrosion prevention
- Patent number 11,800,817
- Issue date Oct 24, 2023
- International Business Machines Corporation
- Injo Ok
Information Patent Grant
Antenna assisted ReRAM formation
- Patent number 11,737,379
- Issue date Aug 22, 2023
- International Business Machines Corporation
- Youngseok Kim
Information Patent Grant
Phase change memory
- Patent number 11,711,989
- Issue date Jul 25, 2023
- International Business Machines Corporation
- Injo Ok
Information Patent Grant
Phase change memory structure with efficient heating system
- Patent number 11,659,780
- Issue date May 23, 2023
- International Business Machines Corporation
- Injo Ok
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-layer phase change memory device
- Patent number 11,621,394
- Issue date Apr 4, 2023
- International Business Machines Corporation
- Kevin W. Brew
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Mixed conducting volatile memory element for accelerated writing of...
- Patent number 11,615,842
- Issue date Mar 28, 2023
- International Business Machines Corporation
- Kevin W. Brew
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory array
- Patent number 11,588,103
- Issue date Feb 21, 2023
- International Business Machines Corporation
- Youngseok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures including middle-of-line (MOL) capacitance...
- Patent number 11,522,045
- Issue date Dec 6, 2022
- TESSERA LLC
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory cell with a projection liner
- Patent number 11,476,418
- Issue date Oct 18, 2022
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated phase change memory cell projection liner and etch stop...
- Patent number 11,456,417
- Issue date Sep 27, 2022
- International Business Machines Corporation
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory cell with a wrap around and ring type of electr...
- Patent number 11,456,415
- Issue date Sep 27, 2022
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Setting an upper bound on RRAM resistance
- Patent number 11,430,514
- Issue date Aug 30, 2022
- International Business Machines Corporation
- Youngseok Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Bi metal subtractive etch for trench and via formation
- Patent number 11,328,954
- Issue date May 10, 2022
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with a silicon oxide layer on a s...
- Patent number 11,282,947
- Issue date Mar 22, 2022
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory using multiple phase change layers and multiple...
- Patent number 11,271,151
- Issue date Mar 8, 2022
- International Business Machines Corporation
- Injo Ok
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory device
- Patent number 11,264,569
- Issue date Mar 1, 2022
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate last vertical transport field effect transistor
- Patent number 11,245,025
- Issue date Feb 8, 2022
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Maskless top source/drain epitaxial growth on vertical transport fi...
- Patent number 11,244,870
- Issue date Feb 8, 2022
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate channel length control in VFET
- Patent number 11,201,092
- Issue date Dec 14, 2021
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low forming voltage non-volatile memory (NVM)
- Patent number 11,196,000
- Issue date Dec 7, 2021
- International Business Machines Corporation
- Youngseok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Alignment through topography on intermediate component for memory d...
- Patent number 11,177,437
- Issue date Nov 16, 2021
- International Business Machines Corporation
- Hao Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposition and physical vapor deposition bilayer for a...
- Patent number 11,158,788
- Issue date Oct 26, 2021
- International Business Machines Corporation
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical fin-type bipolar junction transistor with self-aligned bas...
- Patent number 11,139,380
- Issue date Oct 5, 2021
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for enhancing vertical gate-all-around FET performance
- Patent number 11,069,686
- Issue date Jul 20, 2021
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Confined phase change memory with double air gap
- Patent number 11,063,216
- Issue date Jul 13, 2021
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL MAGNETIC TUNNEL JUNCTION DEVICE
- Publication number 20240237544
- Publication date Jul 11, 2024
- International Business Machines Corporation
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL WITH A VARIABLE ELEMENT AND A PHASE CHANGE MEMORY
- Publication number 20240215462
- Publication date Jun 27, 2024
- International Business Machines Corporation
- Ning Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROXIMITY HEATER TO LOWER RRAM FORMING VOLTAGE
- Publication number 20240188455
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Timothy Mathew Philip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICE
- Publication number 20240130243
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Timothy Mathew Philip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEATER FOR PHASE CHANGE MATERIAL MEMORY CELL
- Publication number 20240114807
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Victor W.C. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MULTILAYER HETEROSTRUCTURE WITH MULTIPLE HEATERS
- Publication number 20240081159
- Publication date Mar 7, 2024
- International Business Machines Corporation
- Ching-Tzu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED PATTERNED PROJECTION LINER FOR SIDEWALL ELECTRODE PCM
- Publication number 20240074336
- Publication date Feb 29, 2024
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL ULTRA-THIN PCM CELL
- Publication number 20240008374
- Publication date Jan 4, 2024
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTENNA ASSISTED RERAM FORMATION
- Publication number 20230309421
- Publication date Sep 28, 2023
- International Business Machines Corporation
- Youngseok Kim
Information Patent Application
LATERAL PHASE CHANGE MEMORY CELL
- Publication number 20230309425
- Publication date Sep 28, 2023
- International Business Machines Corporation
- Timothy Mathew Philip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES INCLUDING MIDDLE-OF-LINE (MOL) CAPACITANCE...
- Publication number 20230299134
- Publication date Sep 21, 2023
- TESSERA LLC
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL WITH DOUBLE ACTIVE VOLUME
- Publication number 20230284541
- Publication date Sep 7, 2023
- International Business Machines Corporation
- Timothy Mathew Philip
- G11 - INFORMATION STORAGE
Information Patent Application
SELECTIVE ENCAPSULATION OF MEMRISTIVE ELEMENT
- Publication number 20230200265
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER PHASE CHANGE MEMORY DEVICE
- Publication number 20230200267
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Kevin W. Brew
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Programming Current Control for Artificial Intelligence (AI) Devices
- Publication number 20230189536
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY PROGRAMMING CURRENT LEAKAGE REDUCTION
- Publication number 20230180639
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORMLY PATTERNED TWO-TERMINAL DEVICES
- Publication number 20230180485
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY GAPS
- Publication number 20230157185
- Publication date May 18, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT RESISTANCE OF A METAL LINER IN A PHASE CHANGE MEMORY CELL
- Publication number 20230129619
- Publication date Apr 27, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARTIFICIAL INTELLIGENCE (AI) DEVICES WITH IMPROVED THERMAL STABILIT...
- Publication number 20230105007
- Publication date Apr 6, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARTIFICIAL INTELLIGENCE DEVICE CELL WITH IMPROVED PHASE CHANGE MATE...
- Publication number 20230099419
- Publication date Mar 30, 2023
- International Business Machines Corporation
- Injo OK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL SIDEWALL PROJECTION LINER
- Publication number 20230098562
- Publication date Mar 30, 2023
- International Business Machines Corporation
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY WITH EMBEDDED AIR GAP
- Publication number 20230093604
- Publication date Mar 23, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICALLY INSULATED PROJECTION LINER FOR AI DEVICE
- Publication number 20230085288
- Publication date Mar 16, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAP-AROUND PROJECTION LINER FOR AI DEVICE
- Publication number 20230070462
- Publication date Mar 9, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFINED BRIDGE CELL PHASE CHANGE MEMORY
- Publication number 20230075622
- Publication date Mar 9, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INDIVIDUALLY PLASMA-INDUCED MEMORY UNIT CELLS FOR A CROSSBAR ARRAY
- Publication number 20230067357
- Publication date Mar 2, 2023
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL SPACER
- Publication number 20230058218
- Publication date Feb 23, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK END OF LINE EMBEDDED RRAM STRUCTURE WITH GRAIN GROWTH ENHANCEMENT
- Publication number 20230051017
- Publication date Feb 16, 2023
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK END OF LINE EMBEDDED RRAM STRUCTURE WITH LOW FORMING VOLTAGE
- Publication number 20230051052
- Publication date Feb 16, 2023
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Wrap-around projection liner for AI device

Confined bridge cell phase change memory

Contact resistance of a metal liner in a phase change memory cell

Phase change memory cell spacer

Multi-layer phase change memory device

Phase change memory cell galvanic corrosion prevention

Antenna assisted ReRAM formation

Phase change memory

Phase change memory structure with efficient heating system

Multi-layer phase change memory device

Mixed conducting volatile memory element for accelerated writing of...

Resistive memory array

Semiconductor structures including middle-of-line (MOL) capacitance...

Phase change memory cell with a projection liner

Integrated phase change memory cell projection liner and etch stop...

Phase change memory cell with a wrap around and ring type of electr...

Setting an upper bound on RRAM resistance

Bi metal subtractive etch for trench and via formation

Heterojunction bipolar transistor with a silicon oxide layer on a s...

Phase change memory using multiple phase change layers and multiple...

Phase change memory device

Gate last vertical transport field effect transistor

Maskless top source/drain epitaxial growth on vertical transport fi...

Gate channel length control in VFET

Low forming voltage non-volatile memory (NVM)

Alignment through topography on intermediate component for memory d...

Atomic layer deposition and physical vapor deposition bilayer for a...

Vertical fin-type bipolar junction transistor with self-aligned bas...

Techniques for enhancing vertical gate-all-around FET performance

Confined phase change memory with double air gap

Patents Applicationslast 30 patents

VERTICAL MAGNETIC TUNNEL JUNCTION DEVICE

MEMORY CELL WITH A VARIABLE ELEMENT AND A PHASE CHANGE MEMORY

PROXIMITY HEATER TO LOWER RRAM FORMING VOLTAGE

MAGNETIC TUNNEL JUNCTION DEVICE

HEATER FOR PHASE CHANGE MATERIAL MEMORY CELL

PHASE CHANGE MULTILAYER HETEROSTRUCTURE WITH MULTIPLE HEATERS

SELF-ALIGNED PATTERNED PROJECTION LINER FOR SIDEWALL ELECTRODE PCM

VERTICAL ULTRA-THIN PCM CELL

ANTENNA ASSISTED RERAM FORMATION

LATERAL PHASE CHANGE MEMORY CELL

SEMICONDUCTOR STRUCTURES INCLUDING MIDDLE-OF-LINE (MOL) CAPACITANCE...

PHASE CHANGE MEMORY CELL WITH DOUBLE ACTIVE VOLUME

SELECTIVE ENCAPSULATION OF MEMRISTIVE ELEMENT

MULTI-LAYER PHASE CHANGE MEMORY DEVICE

Programming Current Control for Artificial Intelligence (AI) Devices

PHASE CHANGE MEMORY PROGRAMMING CURRENT LEAKAGE REDUCTION

UNIFORMLY PATTERNED TWO-TERMINAL DEVICES

PHASE CHANGE MEMORY GAPS

CONTACT RESISTANCE OF A METAL LINER IN A PHASE CHANGE MEMORY CELL

ARTIFICIAL INTELLIGENCE (AI) DEVICES WITH IMPROVED THERMAL STABILIT...

ARTIFICIAL INTELLIGENCE DEVICE CELL WITH IMPROVED PHASE CHANGE MATE...

PHASE CHANGE MEMORY CELL SIDEWALL PROJECTION LINER

PHASE-CHANGE MEMORY WITH EMBEDDED AIR GAP

ELECTRICALLY INSULATED PROJECTION LINER FOR AI DEVICE

WRAP-AROUND PROJECTION LINER FOR AI DEVICE

CONFINED BRIDGE CELL PHASE CHANGE MEMORY

INDIVIDUALLY PLASMA-INDUCED MEMORY UNIT CELLS FOR A CROSSBAR ARRAY

PHASE CHANGE MEMORY CELL SPACER

BACK END OF LINE EMBEDDED RRAM STRUCTURE WITH GRAIN GROWTH ENHANCEMENT

BACK END OF LINE EMBEDDED RRAM STRUCTURE WITH LOW FORMING VOLTAGE