James L. Paterson

Person

Richardson, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
High density EPROM cell and process for fabricating same
- Patent number 5,894,162
- Issue date Apr 13, 1999
- Texas Instruments Incorporated
- James L. Paterson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating a high density EPROM cell by removing a portion of the...
- Patent number 5,571,736
- Issue date Nov 5, 1996
- Texas Instruments Incorporated
- James L. Paterson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating gate memory with improved dielectric
- Patent number RE34535
- Issue date Feb 8, 1994
- Texas Instruments Incorporated
- James L. Paterson
- 365 - Static information storage and retrieval
Information Patent Grant
Interlevel dielectric process
- Patent number 5,114,530
- Issue date May 19, 1992
- Texas Instruments Incorporated
- Kalipatnam V. Rao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making metal-to-polysilicon capacitor
- Patent number 5,108,941
- Issue date Apr 28, 1992
- Texas Instrument Incorporated
- James L. Paterson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal plate capacitor and method for making the same
- Patent number 5,079,670
- Issue date Jan 7, 1992
- Texas Instruments Incorporated
- Howard L. Tigelaar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-to-polysilicon capacitor and method for making the same
- Patent number 5,065,220
- Issue date Nov 12, 1991
- Texas Instruments Incorporated
- James L. Paterson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide/metal floating gate process
- Patent number 5,057,447
- Issue date Oct 15, 1991
- Texas Instruments Incorporated
- James L. Paterson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Word erasable buried bit line EEPROM
- Patent number 5,029,139
- Issue date Jul 2, 1991
- Texas Instruments Incorporated
- James L. Paterson
- G11 - INFORMATION STORAGE
Information Patent Grant
Erasable programmable memory
- Patent number 4,996,668
- Issue date Feb 26, 1991
- Texas Instruments Incorporated
- James L. Paterson
- G11 - INFORMATION STORAGE
Information Patent Grant
Metal plate capacitor and method for making the same
- Patent number 4,971,924
- Issue date Nov 20, 1990
- Texas Instruments Incorporated
- Howard L. Tigelaar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Erasable programmable memory including buried diffusion source/drai...
- Patent number 4,924,437
- Issue date May 8, 1990
- Texas Instruments Incorporated
- James L. Paterson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Erasable programmable memory
- Patent number 4,912,676
- Issue date Mar 27, 1990
- Texas Instruments, Incorporated
- James L. Paterson
- G11 - INFORMATION STORAGE
Information Patent Grant
Floating-gate transistor with a non-linear intergate dielectric
- Patent number 4,888,630
- Issue date Dec 19, 1989
- Texas Instruments Incorporated
- James L. Paterson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Read only memory with improved channel length control and method of...
- Patent number 4,874,715
- Issue date Oct 17, 1989
- Texas Instruments Incorporated
- James L. Paterson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
X-cell EEPROM array
- Patent number 4,839,705
- Issue date Jun 13, 1989
- Texas Instruments Incorporated
- Howard L. Tigelaar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and process with doubled capacitors
- Patent number 4,811,076
- Issue date Mar 7, 1989
- Texas Instruments Incorporated
- Howard L. Tigelaar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interlevel dielectric fabrication process
- Patent number 4,799,992
- Issue date Jan 24, 1989
- Texas Instruments Incorporated
- Kalipatnam V. Rao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Read only memory with improved channel length isolation and method...
- Patent number 4,763,177
- Issue date Aug 9, 1988
- Texas Instruments Incorporated
- James L. Paterson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrically erasable programmable read only memory cell including...
- Patent number 4,713,677
- Issue date Dec 15, 1987
- Texas Instruments Incorporated
- Howard L. Tigelaar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating EPROM array
- Patent number 4,713,142
- Issue date Dec 15, 1987
- Texas Instruments Incorporated
- Allan T. Mitchell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating gate memory process with improved dielectric
- Patent number 4,697,330
- Issue date Oct 6, 1987
- Texas Instruments Incorporated
- James L. Paterson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating gate memory with improved dielectric
- Patent number 4,613,956
- Issue date Sep 23, 1986
- Texas Instruments Incorporated
- James L. Paterson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
EPROM array and method for fabricating
- Patent number 4,597,060
- Issue date Jun 24, 1986
- Texas Instruments Incorporated
- Allan T. Mitchell
- H01 - BASIC ELECTRIC ELEMENTS

James L. Paterson

Person

Patents Grantslast 30 patents

High density EPROM cell and process for fabricating same

Fabricating a high density EPROM cell by removing a portion of the...

Floating gate memory with improved dielectric

Interlevel dielectric process

Method of making metal-to-polysilicon capacitor

Metal plate capacitor and method for making the same

Metal-to-polysilicon capacitor and method for making the same

Silicide/metal floating gate process

Word erasable buried bit line EEPROM

Erasable programmable memory

Metal plate capacitor and method for making the same

Erasable programmable memory including buried diffusion source/drai...

Erasable programmable memory

Floating-gate transistor with a non-linear intergate dielectric

Read only memory with improved channel length control and method of...

X-cell EEPROM array

Device and process with doubled capacitors

Interlevel dielectric fabrication process

Read only memory with improved channel length isolation and method...

Electrically erasable programmable read only memory cell including...

Method for fabricating EPROM array

Floating gate memory process with improved dielectric

Floating gate memory with improved dielectric

EPROM array and method for fabricating