Jenn Ming Huang

Person

Hsin-Chu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Single polysilicon process for DRAM
- Patent number 7,037,776
- Issue date May 2, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jenn-Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single poly-si process for DRAM by deep N-well (NW) plate
- Patent number 7,030,440
- Issue date Apr 18, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jenn-Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single poly-Si process for DRAM by deep N well (NW) plate
- Patent number 6,825,078
- Issue date Nov 30, 2004
- Taiwan Semiconductor Manufacturing Company
- Jenn-Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming high purity silicon oxide field oxide isolation...
- Patent number 6,818,495
- Issue date Nov 16, 2004
- Min-Hsiung Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Micro-electro-mechanical device and method of making
- Patent number 6,794,101
- Issue date Sep 21, 2004
- Motorola, Inc.
- Lianjun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making closely spaced capacitors with reduced parasitic...
- Patent number 6,617,631
- Issue date Sep 9, 2003
- Taiwan Semiconductor Manufacturing Company
- Jenn Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Keyhole at the top metal level prefilled with photoresist to preven...
- Patent number 6,600,228
- Issue date Jul 29, 2003
- Taiwan Semiconductor Manufacturing Company
- Yu-Hua Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a metal gate integrated with a source and drain...
- Patent number 6,579,784
- Issue date Jun 17, 2003
- Taiwan Semiconductor Manufacturing Company
- Jenn Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making embedded DRAM circuits having capacitor under bi...
- Patent number 6,436,763
- Issue date Aug 20, 2002
- Taiwan Semiconductor Manufacturing Company
- Jenn Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making borderless contacts to active device regions and...
- Patent number 6,406,987
- Issue date Jun 18, 2002
- Taiwan Semiconductor Manufacturing Company
- Jenn Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making cost-effective embedded DRAM structures compatibl...
- Patent number 6,353,269
- Issue date Mar 5, 2002
- Taiwan Semiconductor Manufacturing Company
- Jenn Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technology for high performance buried contact and tungsten polycid...
- Patent number 6,351,016
- Issue date Feb 26, 2002
- Taiwan Semiconductor Manufacturing Company
- Kuo-Ching Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of prefilling of keyhole at the top metal level with photore...
- Patent number 6,294,456
- Issue date Sep 25, 2001
- Taiwan Semiconductor Manufacturing Company
- Yu-Hua Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making high-aspect-ratio contacts on integrated circuits...
- Patent number 6,274,471
- Issue date Aug 14, 2001
- Taiwan Semiconductor Manufacturing Company
- Jenn Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Geometry design of active region to improve junction breakdown and...
- Patent number 6,265,120
- Issue date Jul 24, 2001
- Taiwan Semiconductor Manufacturing Company
- Jenn Ming Huang
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Cell design and process for making dynamic random access memory (DR...
- Patent number 6,255,160
- Issue date Jul 3, 2001
- Taiwan Semiconductor Manufacturing Company
- Jenn Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making an enlarged DRAM capacitor using an additional po...
- Patent number 6,251,726
- Issue date Jun 26, 2001
- Taiwan Semiconductor Manufacturing Company
- Jenn Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned contact using spacers on the ILD layer sidewalls
- Patent number 6,235,593
- Issue date May 22, 2001
- Taiwan Semiconductor Manufacturing Company
- Jenn Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross leakage of capacitors in DRAM or embedded DRAM
- Patent number 6,228,699
- Issue date May 8, 2001
- Taiwan Semiconductor Manufacturing Company
- Jenn Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Approach for self-aligned contact and pedestal
- Patent number 6,221,713
- Issue date Apr 24, 2001
- Taiwan Semiconductor Manufacturing Company
- Jenn Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM with improved Beta ratio
- Patent number 6,198,173
- Issue date Mar 6, 2001
- Taiwan Semiconductor Manufacturing Company
- Jenn Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making closely spaced capacitors with reduced parasitic...
- Patent number 6,187,624
- Issue date Feb 13, 2001
- Taiwan Semiconductor Manufacturing Company
- Jenn Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Well-controlled CMP process for DRAM technology
- Patent number 6,159,786
- Issue date Dec 12, 2000
- Taiwan Semiconductor Manufacturing Company
- Min-Hsiung Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and a deep sub-micron field effect transistor structure for...
- Patent number 6,157,064
- Issue date Dec 5, 2000
- Taiwan Semiconductor Manufacturing Company Ltd.
- Jenn Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating capacitor-over-bit line (COB) dynamic random...
- Patent number 6,137,179
- Issue date Oct 24, 2000
- Taiwan Semiconductor Manufacturing Company
- Jenn Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a tee shaped tungsten plug structure to avoid hig...
- Patent number 6,127,260
- Issue date Oct 3, 2000
- Taiwan Semiconductor Manufacturing Company
- Jenn Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making cost-effective embedded DRAM structures compatibl...
- Patent number 6,117,725
- Issue date Sep 12, 2000
- Taiwan Semiconductor Manufacturing Company
- Jenn Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Salicide integration process for embedded DRAM devices
- Patent number 6,117,723
- Issue date Sep 12, 2000
- Taiwan Semiconductor Manufacturing Company
- Jenn Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide process for mixed mode product with dual layer capacitor a...
- Patent number 6,103,622
- Issue date Aug 15, 2000
- Taiwan Semiconductor Manufacturing
- Jenn Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide process for mixed mode product with dual layer capacitor w...
- Patent number 6,103,621
- Issue date Aug 15, 2000
- Taiwan Semiconductor Manufacturing Company
- Jenn-Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Single poly-si process for DRAM by deep N well (NW) plate
- Publication number 20040262660
- Publication date Dec 30, 2004
- Jenn-Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE POLY-SI PROCESS FOR DRAM BY DEEP N WELL (NW) PLATE
- Publication number 20040232461
- Publication date Nov 25, 2004
- Taiwan Semiconductor Manufacturing Co.
- Jenn-Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single polysilicon process for dram
- Publication number 20040121533
- Publication date Jun 24, 2004
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Jenn-Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Micro-electro-mechanical device and method of making
- Publication number 20030224267
- Publication date Dec 4, 2003
- MOTOROLA, INC.
- Lianjun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of prefilling of keyhole at the top metal level with photore...
- Publication number 20020004310
- Publication date Jan 10, 2002
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Yu-Hua Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel cell design and process for making dynamic random access memo...
- Publication number 20010023097
- Publication date Sep 20, 2001
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Jenn Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for making closely spaced capacitors with reduced parasitic...
- Publication number 20010003663
- Publication date Jun 14, 2001
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Jenn Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for making closely spaced capacitors with reduced parasitic...
- Publication number 20010000242
- Publication date Apr 12, 2001
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Jenn Ming Huang
- H01 - BASIC ELECTRIC ELEMENTS

Jenn Ming Huang

Person

Patents Grantslast 30 patents

Single polysilicon process for DRAM

Single poly-si process for DRAM by deep N-well (NW) plate

Single poly-Si process for DRAM by deep N well (NW) plate

Method for forming high purity silicon oxide field oxide isolation...

Micro-electro-mechanical device and method of making

Method for making closely spaced capacitors with reduced parasitic...

Keyhole at the top metal level prefilled with photoresist to preven...

Method for forming a metal gate integrated with a source and drain...

Process for making embedded DRAM circuits having capacitor under bi...

Method for making borderless contacts to active device regions and...

Method for making cost-effective embedded DRAM structures compatibl...

Technology for high performance buried contact and tungsten polycid...

Method of prefilling of keyhole at the top metal level with photore...

Method for making high-aspect-ratio contacts on integrated circuits...

Geometry design of active region to improve junction breakdown and...

Cell design and process for making dynamic random access memory (DR...

Method for making an enlarged DRAM capacitor using an additional po...

Self aligned contact using spacers on the ILD layer sidewalls

Cross leakage of capacitors in DRAM or embedded DRAM

Approach for self-aligned contact and pedestal

SRAM with improved Beta ratio

Method for making closely spaced capacitors with reduced parasitic...

Well-controlled CMP process for DRAM technology

Method and a deep sub-micron field effect transistor structure for...

Method for fabricating capacitor-over-bit line (COB) dynamic random...

Method of forming a tee shaped tungsten plug structure to avoid hig...

Method for making cost-effective embedded DRAM structures compatibl...

Salicide integration process for embedded DRAM devices

Silicide process for mixed mode product with dual layer capacitor a...

Silicide process for mixed mode product with dual layer capacitor w...

Patents Applicationslast 30 patents

Single poly-si process for DRAM by deep N well (NW) plate

SINGLE POLY-SI PROCESS FOR DRAM BY DEEP N WELL (NW) PLATE

Single polysilicon process for dram

Micro-electro-mechanical device and method of making

Method of prefilling of keyhole at the top metal level with photore...

Novel cell design and process for making dynamic random access memo...

Method for making closely spaced capacitors with reduced parasitic...

Method for making closely spaced capacitors with reduced parasitic...