Jianjun Cao

Person

Torrance, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Field plate structures with patterned surface passivation layers an...
- Patent number 11,121,245
- Issue date Sep 14, 2021
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral power device with reduced on-resistance
- Patent number 11,101,349
- Issue date Aug 24, 2021
- Efficient Power Conversion Corporation
- Wen-Chia Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with multiple gallium nitride transistor sets
- Patent number 11,050,339
- Issue date Jun 29, 2021
- Efficient Power Conversion Corporation
- David C. Reusch
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Enhancement-mode GaN transistor with selective and nonselective etc...
- Patent number 10,622,455
- Issue date Apr 14, 2020
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with back surface isolation
- Patent number 10,600,674
- Issue date Mar 24, 2020
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated gallium nitride based DC-DC converter
- Patent number 10,601,300
- Issue date Mar 24, 2020
- Efficient Power Conversion Corporation
- David C. Reusch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN transistors with polysilicon layers used for creating additiona...
- Patent number 10,312,260
- Issue date Jun 4, 2019
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate with self-aligned ledge for enhancement mode GaN transistors
- Patent number 10,312,335
- Issue date Jun 4, 2019
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with back surface isolation
- Patent number 10,312,131
- Issue date Jun 4, 2019
- Efficient Power Converson Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-step surface passivation structures and methods for fabricati...
- Patent number 10,096,702
- Issue date Oct 9, 2018
- Efficient Power Conversion Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flip chip interconnection with reduced current density
- Patent number 10,090,274
- Issue date Oct 2, 2018
- Efficient Power Conversion Corporation
- Robert Strittmatter
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
GaN transistors with polysilicon layers used for creating additiona...
- Patent number 9,837,438
- Issue date Dec 5, 2017
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate with self-aligned ledged for enhancement mode GaN transistors
- Patent number 9,748,347
- Issue date Aug 29, 2017
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of III-nitride power device with reduced gate to drain...
- Patent number 9,711,614
- Issue date Jul 18, 2017
- Infineon Technologies Americas Corp.
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with back surface isolation
- Patent number 9,607,876
- Issue date Mar 28, 2017
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with matching threshold voltages and method for...
- Patent number 9,583,480
- Issue date Feb 28, 2017
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance III-nitride power device
- Patent number 9,472,626
- Issue date Oct 18, 2016
- Infineon Technologies Americas Corp.
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN device with reduced output capacitance and process for making same
- Patent number 9,331,191
- Issue date May 3, 2016
- Efficient Power Conversion Corporation
- Stephen L. Colino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN transistors with polysilicon layers for creating additional com...
- Patent number 9,214,461
- Issue date Dec 15, 2015
- Efficient Power Coversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with matching threshold voltages and method for...
- Patent number 9,214,399
- Issue date Dec 15, 2015
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to fabricate self-aligned isolation in gallium nitride devic...
- Patent number 9,214,528
- Issue date Dec 15, 2015
- Efficient Power Conversion Corporation
- Chunhua Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure in gallium nitride devices and integrated circuits
- Patent number 9,171,911
- Issue date Oct 27, 2015
- Efficient Power Conversion Corporation
- Chunhua Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III nitride power device with reduced QGD
- Patent number 9,076,852
- Issue date Jul 7, 2015
- International Rectifier Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode gallium nitride transistor with improved gate char...
- Patent number 8,969,918
- Issue date Mar 3, 2015
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride power device
- Patent number 8,952,352
- Issue date Feb 10, 2015
- International Rectifier Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a III-nitride semiconductor device
- Patent number 8,940,567
- Issue date Jan 27, 2015
- International Rectifier Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode GaN HEMT device
- Patent number 8,890,168
- Issue date Nov 18, 2014
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implanted and self aligned gate structure for GaN transistors
- Patent number 8,853,749
- Issue date Oct 7, 2014
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode GaN HEMT device with gate spacer and method for fa...
- Patent number 8,823,012
- Issue date Sep 2, 2014
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride semiconductor device with stepped gate
- Patent number 8,803,199
- Issue date Aug 12, 2014
- International Rectifier Corporation
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GaN TRANSISTOR HAVING MULTI-THICKNESS FRONT BARRIER
- Publication number 20240413205
- Publication date Dec 12, 2024
- Efficient Power Conversion Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-TERMINAL BIDIRECTIONAL ENHANCEMENT MODE GaN SWITCH
- Publication number 20240234513
- Publication date Jul 11, 2024
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN DEVICE WITH UNIFORM ELECTRIC FIELD
- Publication number 20240234521
- Publication date Jul 11, 2024
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT FOR GATE OVERVOLTAGE PROTECTION OF POWER DEVICES
- Publication number 20240223178
- Publication date Jul 4, 2024
- Efficient Power Conversion Corporation
- Zhikai Tang
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
THREE-TERMINAL BIDIRECTIONAL ENHANCEMENT MODE GaN SWITCH
- Publication number 20240136408
- Publication date Apr 25, 2024
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIDIRECTIONAL GaN FET WITH SINGLE GATE
- Publication number 20230111542
- Publication date Apr 13, 2023
- Efficient Power Conversion Corporation
- Wen-Chia Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE METAL-INSULATOR-FIELD PLATE METAL INTEGRATED CIRCUIT CAPACITOR...
- Publication number 20220262789
- Publication date Aug 18, 2022
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD PLATE STRUCTURES WITH PATTERNED SURFACE PASSIVATION LAYERS AN...
- Publication number 20200273977
- Publication date Aug 27, 2020
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH MULTIPLE GALLIUM NITRIDE TRANSISTOR SETS
- Publication number 20200195122
- Publication date Jun 18, 2020
- Efficient Power Conversion Corporation
- David C. Reusch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL POWER DEVICE WITH REDUCED ON-RESISTANCE
- Publication number 20200075726
- Publication date Mar 5, 2020
- Efficient Power Conversion Corporation
- Wen-Chia Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION
- Publication number 20190252238
- Publication date Aug 15, 2019
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT-MODE GaN TRANSISTOR WITH SELECTIVE AND NONSELECTIVE ET...
- Publication number 20180366559
- Publication date Dec 20, 2018
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED GALLIUM NITRIDE BASED DC-DC CONVERTER
- Publication number 20180337588
- Publication date Nov 22, 2018
- Efficient Power Conversion Corporation
- David C. Reusch
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
MULTI-STEP SURFACE PASSIVATION STRUCTURES AND METHODS FOR FABRICATI...
- Publication number 20170352754
- Publication date Dec 7, 2017
- Efficient Power Conversion Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN TRANSISTORS WITH POLYSILICON LAYERS USED FOR CREATING ADDITIONA...
- Publication number 20170330898
- Publication date Nov 16, 2017
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE WITH SELF-ALIGNED LEDGE FOR ENHANCEMENT MODE GaN TRANSISTORS
- Publication number 20170317179
- Publication date Nov 2, 2017
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION
- Publication number 20170162429
- Publication date Jun 8, 2017
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE WITH SELF-ALIGNED LEDGED FOR ENHANCEMENT MODE GaN TRANSISTORS
- Publication number 20170047414
- Publication date Feb 16, 2017
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR...
- Publication number 20160111416
- Publication date Apr 21, 2016
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN TRANSISTORS WITH POLYSILICON LAYERS USED FOR CREATING ADDITIONA...
- Publication number 20160086980
- Publication date Mar 24, 2016
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE WITH SELF-ALIGNED LEDGED FOR ENHANCEMENT MODE GaN TRANSISTORS
- Publication number 20160035847
- Publication date Feb 4, 2016
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication of III-Nitride Power Device with Reduced Gate to Drain...
- Publication number 20150380518
- Publication date Dec 31, 2015
- INTERNATIONAL RECTIFIER CORPORATION
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLIP CHIP INTERCONNECTION WITH REDUCED CURRENT DENSITY
- Publication number 20150270241
- Publication date Sep 24, 2015
- Efficient Power Conversion Corporation
- ROBERT STRITTMATTER
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
High Performance III-Nitride Power Device
- Publication number 20150171172
- Publication date Jun 18, 2015
- INTERNATIONAL RECTIFIER CORPORATION
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Semiconductor Device Fabrication
- Publication number 20150132933
- Publication date May 14, 2015
- INTERNATIONAL RECTIFIER CORPORATION
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR...
- Publication number 20150034962
- Publication date Feb 5, 2015
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN TRANSISTORS WITH POLYSILICON LAYERS FOR CREATING ADDITIONAL COM...
- Publication number 20150028384
- Publication date Jan 29, 2015
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN DEVICE WITH REDUCED OUTPUT CAPACITANCE AND PROCESS FOR MAKING SAME
- Publication number 20150028390
- Publication date Jan 29, 2015
- Efficient Power Conversion Corporation
- Stephen L. Colino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
- Publication number 20150008442
- Publication date Jan 8, 2015
- Efficient Power Conversion Corporation
- Chunhua Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FABRICATE SELF-ALIGNED ISOLATION IN GALLIUM NITRIDE DEVIC...
- Publication number 20150011057
- Publication date Jan 8, 2015
- Efficient Power Conversion Corporation
- Chunhua Zhou
- H01 - BASIC ELECTRIC ELEMENTS

Jianjun Cao

Person

Patents Grantslast 30 patents

Field plate structures with patterned surface passivation layers an...

Lateral power device with reduced on-resistance

Integrated circuit with multiple gallium nitride transistor sets

Enhancement-mode GaN transistor with selective and nonselective etc...

Semiconductor devices with back surface isolation

Integrated gallium nitride based DC-DC converter

GaN transistors with polysilicon layers used for creating additiona...

Gate with self-aligned ledge for enhancement mode GaN transistors

Semiconductor devices with back surface isolation

Multi-step surface passivation structures and methods for fabricati...

Flip chip interconnection with reduced current density

GaN transistors with polysilicon layers used for creating additiona...

Gate with self-aligned ledged for enhancement mode GaN transistors

Fabrication of III-nitride power device with reduced gate to drain...

Semiconductor devices with back surface isolation

Integrated circuit with matching threshold voltages and method for...

High performance III-nitride power device

GaN device with reduced output capacitance and process for making same

GaN transistors with polysilicon layers for creating additional com...

Integrated circuit with matching threshold voltages and method for...

Method to fabricate self-aligned isolation in gallium nitride devic...

Isolation structure in gallium nitride devices and integrated circuits

III nitride power device with reduced QGD

Enhancement mode gallium nitride transistor with improved gate char...

III-nitride power device

Method for fabricating a III-nitride semiconductor device

Enhancement mode GaN HEMT device

Ion implanted and self aligned gate structure for GaN transistors

Enhancement mode GaN HEMT device with gate spacer and method for fa...

III-nitride semiconductor device with stepped gate

Patents Applicationslast 30 patents

GaN TRANSISTOR HAVING MULTI-THICKNESS FRONT BARRIER

THREE-TERMINAL BIDIRECTIONAL ENHANCEMENT MODE GaN SWITCH

GaN DEVICE WITH UNIFORM ELECTRIC FIELD

INTEGRATED CIRCUIT FOR GATE OVERVOLTAGE PROTECTION OF POWER DEVICES

THREE-TERMINAL BIDIRECTIONAL ENHANCEMENT MODE GaN SWITCH

BIDIRECTIONAL GaN FET WITH SINGLE GATE

GATE METAL-INSULATOR-FIELD PLATE METAL INTEGRATED CIRCUIT CAPACITOR...

FIELD PLATE STRUCTURES WITH PATTERNED SURFACE PASSIVATION LAYERS AN...

INTEGRATED CIRCUIT WITH MULTIPLE GALLIUM NITRIDE TRANSISTOR SETS

LATERAL POWER DEVICE WITH REDUCED ON-RESISTANCE

SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION

ENHANCEMENT-MODE GaN TRANSISTOR WITH SELECTIVE AND NONSELECTIVE ET...

INTEGRATED GALLIUM NITRIDE BASED DC-DC CONVERTER

MULTI-STEP SURFACE PASSIVATION STRUCTURES AND METHODS FOR FABRICATI...

GaN TRANSISTORS WITH POLYSILICON LAYERS USED FOR CREATING ADDITIONA...

GATE WITH SELF-ALIGNED LEDGE FOR ENHANCEMENT MODE GaN TRANSISTORS

SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION

GATE WITH SELF-ALIGNED LEDGED FOR ENHANCEMENT MODE GaN TRANSISTORS

INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR...

GAN TRANSISTORS WITH POLYSILICON LAYERS USED FOR CREATING ADDITIONA...

GATE WITH SELF-ALIGNED LEDGED FOR ENHANCEMENT MODE GaN TRANSISTORS

Fabrication of III-Nitride Power Device with Reduced Gate to Drain...

FLIP CHIP INTERCONNECTION WITH REDUCED CURRENT DENSITY

High Performance III-Nitride Power Device

III-Nitride Semiconductor Device Fabrication

INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR...

GaN TRANSISTORS WITH POLYSILICON LAYERS FOR CREATING ADDITIONAL COM...

GaN DEVICE WITH REDUCED OUTPUT CAPACITANCE AND PROCESS FOR MAKING SAME

ISOLATION STRUCTURE IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS

METHOD TO FABRICATE SELF-ALIGNED ISOLATION IN GALLIUM NITRIDE DEVIC...