Jiehui SHU

Person

Clifton Park, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gate cut isolation including air gap, integrated circuit including...
- Patent number 11,610,965
- Issue date Mar 21, 2023
- GLOBALFOUNDRIES U.S. INC.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with separately-formed source and drain
- Patent number 11,563,085
- Issue date Jan 24, 2023
- GLOBALFOUNDRIES U.S. INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC product comprising an insulating gate separation structure posit...
- Patent number 11,522,068
- Issue date Dec 6, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming two portion spacer after metal gate and contact formation,...
- Patent number 11,482,456
- Issue date Oct 25, 2022
- GLOBALFOUNDRIES U.S. INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical fuse formation during a multiple patterning process
- Patent number 11,348,870
- Issue date May 31, 2022
- GLOBALFOUNDRIES U.S. INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming transistor devices comprising a single semicondu...
- Patent number 11,349,030
- Issue date May 31, 2022
- GLOBALFOUNDRIES U.S. INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with gate cut structure
- Patent number 11,349,028
- Issue date May 31, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type field effect transistor with reduced fin bulge and method
- Patent number 11,264,382
- Issue date Mar 1, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Limiting lateral epitaxy growth at N-P boundary using inner spacer,...
- Patent number 11,217,584
- Issue date Jan 4, 2022
- GLOBALFOUNDRIES U.S. INC.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with a hybrid source or drain
- Patent number 11,177,385
- Issue date Nov 16, 2021
- GLOBALFOUNDRIES U.S. INC.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Middle of line gate structures
- Patent number 11,171,237
- Issue date Nov 9, 2021
- GLOBALFOUNDRIES U.S. INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device comprising a single diffusion break with an upper sur...
- Patent number 11,121,023
- Issue date Sep 14, 2021
- GLOBALFOUNDRIES U.S. INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC products formed on a substrate having localized regions of high...
- Patent number 11,114,466
- Issue date Sep 7, 2021
- GLOBALFOUNDRIES U.S. INC.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple threshold voltage devices
- Patent number 11,094,598
- Issue date Aug 17, 2021
- GLOBALFOUNDRIES U.S. INC.
- Bharat V. Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS integrated circuit product
- Patent number 11,075,298
- Issue date Jul 27, 2021
- GLOBALFOUNDRIES U.S. INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with separately-formed source and drain
- Patent number 11,075,268
- Issue date Jul 27, 2021
- GLOBALFOUNDRIES U.S. INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures in a wide gate pitch region of semiconduct...
- Patent number 11,043,566
- Issue date Jun 22, 2021
- GLOBALFOUNDRIES U.S. INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures over active region and methods of forming...
- Patent number 11,031,389
- Issue date Jun 8, 2021
- GLOBALFOUNDRIES U.S. INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with wide gate-to-gate spacing
- Patent number 11,004,748
- Issue date May 11, 2021
- GLOBALFOUNDRIES U.S. INC.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mask-free methods of forming structures in a semiconductor device
- Patent number 11,004,953
- Issue date May 11, 2021
- GLOBALFOUNDRIES U.S. INC.
- Rinus Tek Po Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut isolation including air gap, integrated circuit including...
- Patent number 10,971,583
- Issue date Apr 6, 2021
- GLOBALFOUNDRIES U.S. INC.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-step insulator formation in trenches to avoid seams in insula...
- Patent number 10,964,599
- Issue date Mar 30, 2021
- GLOBALFOUNDRIES U.S. INC.
- Asli Sirman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch stop member in buried insulator of SOI substrate to reduce con...
- Patent number 10,943,814
- Issue date Mar 9, 2021
- GLOBALFOUNDRIES U.S. INC.
- Ryan W. Sporer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffusion break structures in semiconductor devices
- Patent number 10,937,685
- Issue date Mar 2, 2021
- GLOBALFOUNDRIES Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical resistor adjacent inactive gate over trench isolation
- Patent number 10,923,469
- Issue date Feb 16, 2021
- GLOBALFOUNDRIES U.S. INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mask-free methods of forming structures in a semiconductor device
- Patent number 10,896,853
- Issue date Jan 19, 2021
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced parasitic capacitance
- Patent number 10,840,245
- Issue date Nov 17, 2020
- GLOBALFOUNDRIES Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer structures on transistor devices
- Patent number 10,833,171
- Issue date Nov 10, 2020
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal resistors with a non-planar configuration
- Patent number 10,832,839
- Issue date Nov 10, 2020
- GLOBALFOUNDRIES Inc.
- Scott Beasor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal resistor structure in at least one cavity in dielectric over...
- Patent number 10,833,067
- Issue date Nov 10, 2020
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTORS WITH SEPARATELY-FORMED SOURCE AND DRAIN
- Publication number 20210249508
- Publication date Aug 12, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH A HYBRID SOURCE OR DRAIN
- Publication number 20210242344
- Publication date Aug 5, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC PRODUCTS FORMED ON A SUBSTRATE HAVING LOCALIZED REGIONS OF HIGH...
- Publication number 20210233934
- Publication date Jul 29, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Sipeng GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING TRANSISTOR DEVICES COMPRISING A SINGLE SEMICONDU...
- Publication number 20210217887
- Publication date Jul 15, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT ISOLATION INCLUDING AIR GAP, INTEGRATED CIRCUIT INCLUDING...
- Publication number 20210183997
- Publication date Jun 17, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIMITING LATERAL EPITAXY GROWTH AT N-P BOUNDARY USING INNER SPACER,...
- Publication number 20210125984
- Publication date Apr 29, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES IN A WIDE GATE PITCH REGION OF SEMICONDUCT...
- Publication number 20210111261
- Publication date Apr 15, 2021
- GLOBALFOUNDRIES U.S. Inc.
- JIEHUI SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE CUT STRUCTURE
- Publication number 20210074842
- Publication date Mar 11, 2021
- GLOBALFOUNDRIES INC.
- JIEHUI SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH STOP MEMBER IN BURIED INSULATOR OF SOI SUBSTRATE TO REDUCE CON...
- Publication number 20210057271
- Publication date Feb 25, 2021
- GLOBALFOUNDRIES INC.
- Ryan W. Sporer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH SEPARATELY-FORMED SOURCE AND DRAIN
- Publication number 20210050419
- Publication date Feb 18, 2021
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH REDUCED PARASITIC CAPACITANCE
- Publication number 20210050425
- Publication date Feb 18, 2021
- GLOBALFOUNDRIES INC.
- SHESH MANI PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE WITH COUNTER DOPING REGION BETWEEN N AND P WELLS UNDER GA...
- Publication number 20210043766
- Publication date Feb 11, 2021
- GLOBALFOUNDRIES INC.
- Baofu Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE THRESHOLD VOLTAGE DEVICES
- Publication number 20210013109
- Publication date Jan 14, 2021
- GLOBALFOUNDRIES INC.
- Bharat V. KRISHNAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE FIELD EFFECT TRANSISTOR WITH REDUCED FIN BULGE AND METHOD
- Publication number 20210005601
- Publication date Jan 7, 2021
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING AN LDMOS DEVICE AND THE RESULTING INTEGRATED CIR...
- Publication number 20200411684
- Publication date Dec 31, 2020
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MASK-FREE METHODS OF FORMING STRUCTURES IN A SEMICONDUCTOR DEVICE
- Publication number 20200411664
- Publication date Dec 31, 2020
- GLOBALFOUNDRIES INC.
- RINUS TEK PO LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSION BREAK STRUCTURES IN SEMICONDUCTOR DEVICES AND METHODS OF...
- Publication number 20200402838
- Publication date Dec 24, 2020
- GLOBALFOUNDRIES INC.
- SIPENG GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES OVER ACTIVE REGION AND METHODS OF FORMING...
- Publication number 20200395356
- Publication date Dec 17, 2020
- GLOBALFOUNDRIES Inc.
- Jiehui SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH WIDE GATE-TO-GATE SPACING
- Publication number 20200388540
- Publication date Dec 10, 2020
- GLOBALFOUNDRIES Inc.
- SIPENG GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURES OVER AN ACTIVE REGION OF A SEMICONDUCTOR DEVICE
- Publication number 20200373410
- Publication date Nov 26, 2020
- GLOBALFOUNDRIES INC.
- TUNG-HSING LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MASK-FREE METHODS OF FORMING STRUCTURES IN A SEMICONDUCTOR DEVICE
- Publication number 20200343142
- Publication date Oct 29, 2020
- GLOBALFOUNDRIES INC.
- JIEHUI SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIDDLE OF LINE GATE STRUCTURES
- Publication number 20200335619
- Publication date Oct 22, 2020
- GLOBALFOUNDRIES INC.
- Yanping SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER STRUCTURES ON TRANSISTOR DEVICES
- Publication number 20200335600
- Publication date Oct 22, 2020
- GLOBALFOUNDRIES INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICAL FUSE FORMATION DURING A MULTIPLE PATTERNING PROCESS
- Publication number 20200335435
- Publication date Oct 22, 2020
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTOR STRUCTURE FOR INTEGRATED CIRCUIT, AND RELATED METHODS
- Publication number 20200312947
- Publication date Oct 1, 2020
- GLOBALFOUNDRIES INC.
- Jiehui SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING TWO PORTION SPACER AFTER METAL GATE AND CONTACT FORMATION,...
- Publication number 20200303261
- Publication date Sep 24, 2020
- GLOBALFOUNDRIES INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH A PROTECTIVE LINER AND METHODS OF FOR...
- Publication number 20200303247
- Publication date Sep 24, 2020
- GLOBALFOUNDRIES INC.
- JIEHUI SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT PRODUCT WITH A MULTI-LAYER SINGLE DIFFUSION BREA...
- Publication number 20200243643
- Publication date Jul 30, 2020
- GLOBALFOUNDRIES INC.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL RESISTOR ADJACENT INACTIVE GATE OVER TRENCH ISOLATION
- Publication number 20200227404
- Publication date Jul 16, 2020
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH SHAPED TRENCH AND METHODS OF FORMING T...
- Publication number 20200211903
- Publication date Jul 2, 2020
- GLOBALFOUNDRIES INC.
- JIEHUI SHU
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Gate cut isolation including air gap, integrated circuit including...

Transistors with separately-formed source and drain

IC product comprising an insulating gate separation structure posit...

Forming two portion spacer after metal gate and contact formation,...

Electrical fuse formation during a multiple patterning process

Methods of forming transistor devices comprising a single semicondu...

Semiconductor device with gate cut structure

Fin-type field effect transistor with reduced fin bulge and method

Limiting lateral epitaxy growth at N-P boundary using inner spacer,...

Transistors with a hybrid source or drain

Middle of line gate structures

FinFET device comprising a single diffusion break with an upper sur...

IC products formed on a substrate having localized regions of high...

Multiple threshold voltage devices

LDMOS integrated circuit product

Transistors with separately-formed source and drain

Semiconductor structures in a wide gate pitch region of semiconduct...

Semiconductor structures over active region and methods of forming...

Semiconductor devices with wide gate-to-gate spacing

Mask-free methods of forming structures in a semiconductor device

Gate cut isolation including air gap, integrated circuit including...

Multi-step insulator formation in trenches to avoid seams in insula...

Etch stop member in buried insulator of SOI substrate to reduce con...

Diffusion break structures in semiconductor devices

Vertical resistor adjacent inactive gate over trench isolation

Mask-free methods of forming structures in a semiconductor device

Semiconductor device with reduced parasitic capacitance

Spacer structures on transistor devices

Metal resistors with a non-planar configuration

Metal resistor structure in at least one cavity in dielectric over...

Patents Applicationslast 30 patents

TRANSISTORS WITH SEPARATELY-FORMED SOURCE AND DRAIN

TRANSISTORS WITH A HYBRID SOURCE OR DRAIN

IC PRODUCTS FORMED ON A SUBSTRATE HAVING LOCALIZED REGIONS OF HIGH...

METHODS OF FORMING TRANSISTOR DEVICES COMPRISING A SINGLE SEMICONDU...

GATE CUT ISOLATION INCLUDING AIR GAP, INTEGRATED CIRCUIT INCLUDING...

LIMITING LATERAL EPITAXY GROWTH AT N-P BOUNDARY USING INNER SPACER,...

SEMICONDUCTOR STRUCTURES IN A WIDE GATE PITCH REGION OF SEMICONDUCT...

SEMICONDUCTOR DEVICE WITH GATE CUT STRUCTURE

ETCH STOP MEMBER IN BURIED INSULATOR OF SOI SUBSTRATE TO REDUCE CON...

TRANSISTORS WITH SEPARATELY-FORMED SOURCE AND DRAIN

SEMICONDUCTOR DEVICE WITH REDUCED PARASITIC CAPACITANCE

STRUCTURE WITH COUNTER DOPING REGION BETWEEN N AND P WELLS UNDER GA...

MULTIPLE THRESHOLD VOLTAGE DEVICES

FIN-TYPE FIELD EFFECT TRANSISTOR WITH REDUCED FIN BULGE AND METHOD

METHODS OF FORMING AN LDMOS DEVICE AND THE RESULTING INTEGRATED CIR...

MASK-FREE METHODS OF FORMING STRUCTURES IN A SEMICONDUCTOR DEVICE

DIFFUSION BREAK STRUCTURES IN SEMICONDUCTOR DEVICES AND METHODS OF...

SEMICONDUCTOR STRUCTURES OVER ACTIVE REGION AND METHODS OF FORMING...

SEMICONDUCTOR DEVICES WITH WIDE GATE-TO-GATE SPACING

CONTACT STRUCTURES OVER AN ACTIVE REGION OF A SEMICONDUCTOR DEVICE

MASK-FREE METHODS OF FORMING STRUCTURES IN A SEMICONDUCTOR DEVICE

MIDDLE OF LINE GATE STRUCTURES

SPACER STRUCTURES ON TRANSISTOR DEVICES

ELECTRICAL FUSE FORMATION DURING A MULTIPLE PATTERNING PROCESS

RESISTOR STRUCTURE FOR INTEGRATED CIRCUIT, AND RELATED METHODS

FORMING TWO PORTION SPACER AFTER METAL GATE AND CONTACT FORMATION,...

SEMICONDUCTOR STRUCTURES WITH A PROTECTIVE LINER AND METHODS OF FOR...

INTEGRATED CIRCUIT PRODUCT WITH A MULTI-LAYER SINGLE DIFFUSION BREA...

VERTICAL RESISTOR ADJACENT INACTIVE GATE OVER TRENCH ISOLATION

SEMICONDUCTOR STRUCTURE WITH SHAPED TRENCH AND METHODS OF FORMING T...