John P. Barnak

Person

Newberg, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Technique to prevent tin contamination of mirrors and electrodes in...
- Patent number 7,567,379
- Issue date Jul 28, 2009
- Intel Corporation
- Robert Bristol
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Integrating n-type and p-type metal gate transistors
- Patent number 7,316,949
- Issue date Jan 8, 2008
- Intel Corporation
- Mark Doczy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a multilayer stack alloy for work function engin...
- Patent number 7,122,870
- Issue date Oct 17, 2006
- Intel Corporation
- John Barnak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming an intermediate layer in interconnect joints and structures...
- Patent number 7,087,521
- Issue date Aug 8, 2006
- Intel Corporation
- Mukul P. Renavikar
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Under bump metallization layer to enable use of high tin content so...
- Patent number 7,064,446
- Issue date Jun 20, 2006
- Intel Corporation
- John P. Barnak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET gate electrodes having performance tuned work functions and...
- Patent number 7,022,559
- Issue date Apr 4, 2006
- Intel Corporation
- John P. Barnak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
integrating n-type and P-type metal gate transistors
- Patent number 6,972,225
- Issue date Dec 6, 2005
- Intel Corporation
- Mark Doczy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating n-type and p-type metal gate transistors
- Patent number 6,953,719
- Issue date Oct 11, 2005
- Intel Corporation
- Mark Doczy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device having a high-k gate diele...
- Patent number 6,939,815
- Issue date Sep 6, 2005
- Intel Corporation
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device having a high-k gate diele...
- Patent number 6,897,134
- Issue date May 24, 2005
- Intel Corporation
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device having a high-k gate diele...
- Patent number 6,867,102
- Issue date Mar 15, 2005
- Intel Corporation
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating n-type and p-type metal gate transistors
- Patent number 6,858,483
- Issue date Feb 22, 2005
- Intel Corporation
- Mark Doczy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precise patterning of high-K films
- Patent number 6,855,639
- Issue date Feb 15, 2005
- Intel Corporation
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a multilayer stack alloy for work function engin...
- Patent number 6,849,509
- Issue date Feb 1, 2005
- Intel Corporation
- John Barnak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device having a high-k gate diele...
- Patent number 6,806,146
- Issue date Oct 19, 2004
- Intel Corporation
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device having a high-k gate diele...
- Patent number 6,709,911
- Issue date Mar 23, 2004
- Intel Corporation
- Mark L. Doczy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device having a high-k gate diele...
- Patent number 6,696,327
- Issue date Feb 24, 2004
- Intel Corporation
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of manufacturing alloy sputtering targets
- Publication number 20060137969
- Publication date Jun 29, 2006
- Gerald B. Feldewerth
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FORMING AN INTERMEDIATE LAYER IN INTERCONNECT JOINTS AND STRUCTURES...
- Publication number 20060110916
- Publication date May 25, 2006
- Mukul P. Renavikar
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
Integrating n-type and p-type metal gate transistors
- Publication number 20060030104
- Publication date Feb 9, 2006
- Mark Doczy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Under bump metallization layer to enable use of high tin content so...
- Publication number 20050250323
- Publication date Nov 10, 2005
- John P. Barnak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Technique to prevent tin contamination of mirrors and electrodes in...
- Publication number 20050244572
- Publication date Nov 3, 2005
- Robert Bristol
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Enhanced gate structure
- Publication number 20050233530
- Publication date Oct 20, 2005
- John P. Barnak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNDER BUMP METALLIZATION LAYER TO ENABLE USE OF HIGH TIN CONTENT SO...
- Publication number 20050212133
- Publication date Sep 29, 2005
- John P. Barnak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Precise patterning of high-K films
- Publication number 20050110072
- Publication date May 26, 2005
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhanced gate structure
- Publication number 20050045961
- Publication date Mar 3, 2005
- John P. Barnak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for making a semiconductor device having a high-k gate diele...
- Publication number 20050048794
- Publication date Mar 3, 2005
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrating N-type and P-type metal gate transistors
- Publication number 20050040469
- Publication date Feb 24, 2005
- Mark Doczy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRECISE PATTERNING OF HIGH-K FILMS
- Publication number 20050026451
- Publication date Feb 3, 2005
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming a high dielectric constant film using metallic precursor
- Publication number 20050017238
- Publication date Jan 27, 2005
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming a multilayer stack alloy for work function engin...
- Publication number 20050009311
- Publication date Jan 13, 2005
- John Barnak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for making a semiconductor device having a high-k gate diele...
- Publication number 20040235251
- Publication date Nov 25, 2004
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrating n-type and p-type metal gate transistors
- Publication number 20040214385
- Publication date Oct 28, 2004
- Mark Doczy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for making a semiconductor device having a high-k gate diele...
- Publication number 20040185627
- Publication date Sep 23, 2004
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrating n-type and p-type metal gate transistors
- Publication number 20040121541
- Publication date Jun 24, 2004
- Mark Doczy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming metal-insulator-metal capacitors
- Publication number 20040120097
- Publication date Jun 24, 2004
- Stephen T. Chambers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming a multilayer stack alloy for work function engin...
- Publication number 20040108557
- Publication date Jun 10, 2004
- John Barnak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET gate electrodes having performance tuned work functions and...
- Publication number 20030146479
- Publication date Aug 7, 2003
- Intel Corporation
- John P. Barnak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET GATE ELECTRODES HAVING PERFORMANCE TUNED WORK FUNCTIONS AND...
- Publication number 20020008257
- Publication date Jan 24, 2002
- JOHN P. BARNAK
- H01 - BASIC ELECTRIC ELEMENTS

John P. Barnak

Person

Patents Grantslast 30 patents

Technique to prevent tin contamination of mirrors and electrodes in...

Integrating n-type and p-type metal gate transistors

Methods of forming a multilayer stack alloy for work function engin...

Forming an intermediate layer in interconnect joints and structures...

Under bump metallization layer to enable use of high tin content so...

MOSFET gate electrodes having performance tuned work functions and...

integrating n-type and P-type metal gate transistors

Integrating n-type and p-type metal gate transistors

Method for making a semiconductor device having a high-k gate diele...

Method for making a semiconductor device having a high-k gate diele...

Method for making a semiconductor device having a high-k gate diele...

Integrating n-type and p-type metal gate transistors

Precise patterning of high-K films

Methods of forming a multilayer stack alloy for work function engin...

Method for making a semiconductor device having a high-k gate diele...

Method for making a semiconductor device having a high-k gate diele...

Method for making a semiconductor device having a high-k gate diele...

Patents Applicationslast 30 patents

Method of manufacturing alloy sputtering targets

FORMING AN INTERMEDIATE LAYER IN INTERCONNECT JOINTS AND STRUCTURES...

Integrating n-type and p-type metal gate transistors

Under bump metallization layer to enable use of high tin content so...

Technique to prevent tin contamination of mirrors and electrodes in...

Enhanced gate structure

UNDER BUMP METALLIZATION LAYER TO ENABLE USE OF HIGH TIN CONTENT SO...

Precise patterning of high-K films

Enhanced gate structure

Method for making a semiconductor device having a high-k gate diele...

Integrating N-type and P-type metal gate transistors

PRECISE PATTERNING OF HIGH-K FILMS

Forming a high dielectric constant film using metallic precursor

Methods of forming a multilayer stack alloy for work function engin...

Method for making a semiconductor device having a high-k gate diele...

Integrating n-type and p-type metal gate transistors

Method for making a semiconductor device having a high-k gate diele...

Integrating n-type and p-type metal gate transistors

Methods of forming metal-insulator-metal capacitors

Methods of forming a multilayer stack alloy for work function engin...

MOSFET gate electrodes having performance tuned work functions and...

MOSFET GATE ELECTRODES HAVING PERFORMANCE TUNED WORK FUNCTIONS AND...