Juntao Li

Person

Cohoes, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
PCM cell with nanoheater surrounded with airgaps
- Patent number 12,256,653
- Issue date Mar 18, 2025
- International Business Machines Corporation
- Juntao Li
Information Patent Grant
Phase change memory with concentric ring-shaped heater
- Patent number 12,245,530
- Issue date Mar 4, 2025
- International Business Machines Corporation
- Kangguo Cheng
Information Patent Grant
Air gap spacer formation for nano-scale semiconductor devices
- Patent number 12,224,203
- Issue date Feb 11, 2025
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing contact resistance of phase change memory bridge cell
- Patent number 12,219,885
- Issue date Feb 4, 2025
- International Business Machines Corporation
- Kangguo Cheng
Information Patent Grant
Phase change memory with conductive rings
- Patent number 12,219,884
- Issue date Feb 4, 2025
- International Business Machines Corporation
- Kangguo Cheng
Information Patent Grant
Phase change memory with multi-level programming
- Patent number 12,207,570
- Issue date Jan 21, 2025
- International Business Machines Corporation
- Ching-Tzu Chen
Information Patent Grant
Dual strained semiconductor substrate and patterning
- Patent number 12,191,208
- Issue date Jan 7, 2025
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked FET with independent gate control
- Patent number 12,176,345
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform interfacial layer on vertical fin sidewalls of vertical tra...
- Patent number 12,132,098
- Issue date Oct 29, 2024
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field-effect transistor with wrap-around contact structure
- Patent number 12,119,346
- Issue date Oct 15, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming N-type and P-type horizontal gate-all-around devices
- Patent number 12,113,067
- Issue date Oct 8, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor with late source/drain epitaxy
- Patent number 11,996,480
- Issue date May 28, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical fin field effect transistor devices with reduced top sourc...
- Patent number 11,978,783
- Issue date May 7, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory cell with an airgap to allow for the expansion...
- Patent number 11,963,469
- Issue date Apr 16, 2024
- International Business Machines Corporation
- Kangguo Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Confining filament at pillar center for memory devices
- Patent number 11,937,522
- Issue date Mar 19, 2024
- International Business Machines Corporation
- Dexin Kong
Information Patent Grant
Semiconductor structure having bottom isolation and enhanced carrie...
- Patent number 11,923,363
- Issue date Mar 5, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor with punchthrough stop region
- Patent number 11,923,438
- Issue date Mar 5, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for stacked vertical transistors
- Patent number 11,908,890
- Issue date Feb 20, 2024
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor
- Patent number 11,901,438
- Issue date Feb 13, 2024
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Vertical field effect transistor including integrated antifuse
- Patent number 11,882,695
- Issue date Jan 23, 2024
- Samsung Electronics Co., Ltd.
- Kangguo Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Nanotip filament confinement
- Patent number 11,877,524
- Issue date Jan 16, 2024
- International Business Machines Corporation
- Juntao Li
Information Patent Grant
Strained superlattice
- Patent number 11,848,357
- Issue date Dec 19, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming stacked nanosheet semiconductor devices with optimal crysta...
- Patent number 11,837,604
- Issue date Dec 5, 2023
- International Business Machine Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Filament confinement in resistive random access memory
- Patent number 11,812,675
- Issue date Nov 7, 2023
- International Business Machines Corporation
- Juntao Li
Information Patent Grant
Work function metal patterning for nanosheet CFETs
- Patent number 11,798,851
- Issue date Oct 24, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet IC device with single diffusion break
- Patent number 11,791,199
- Issue date Oct 17, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varactor integrated with complementary metal-oxide semiconductor de...
- Patent number 11,791,342
- Issue date Oct 17, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor with inner spacers
- Patent number 11,764,265
- Issue date Sep 19, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor with self-aligned gate
- Patent number 11,728,433
- Issue date Aug 15, 2023
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid non-volatile memory cell
- Patent number 11,696,518
- Issue date Jul 4, 2023
- International Business Machines Corporation
- Kangguo Cheng
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SPACER MODIFICATION FOR SELECTIVE AIRGAP SPACER FORMATION
- Publication number 20250107219
- Publication date Mar 27, 2025
- International Business Machines Corporation
- Juntao Li
Information Patent Application
SELECTIVE DEPOSITION OF GRAPHENE ON COBALT-CAPPED COPPER DUAL DAMAS...
- Publication number 20250096036
- Publication date Mar 20, 2025
- LAM RESEARCH CORPORATION
- Asish Parbatani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET DEVICE WITH ALIGNED ISOLATION AND EPITAXIAL GROWTH
- Publication number 20250098198
- Publication date Mar 20, 2025
- International Business Machines Corporation
- Julien Frougier
Information Patent Application
NANOSHEET BASED EXTENDED-GATE DEVICE INTEGRATION
- Publication number 20250072116
- Publication date Feb 27, 2025
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION METAL PATTERNING AND GATE CUT FOR NANOSHEET DEVICE
- Publication number 20250056849
- Publication date Feb 13, 2025
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION METAL PATTERNING AND MIDDLE-OF-LINE SELF-ALIGNED CONT...
- Publication number 20250031414
- Publication date Jan 23, 2025
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATION FOR BACKSIDE CONTACT FORMATION
- Publication number 20250022913
- Publication date Jan 16, 2025
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM FORMATION FOR VERTICAL FET TRANSISTOR WITH BACKSIDE CONTACT
- Publication number 20250008719
- Publication date Jan 2, 2025
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT OF SELF-ALIGNED CONTACT POST REPLACEMENT METAL GATE
- Publication number 20240429096
- Publication date Dec 26, 2024
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED TRANSISTOR HAVING AN OVER-THE-CHANNEL ETCH-STOP ISOLATIO...
- Publication number 20240429280
- Publication date Dec 26, 2024
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTOR
- Publication number 20240413224
- Publication date Dec 12, 2024
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Application
PHASE CHANGE MEMORY CELL
- Publication number 20240415032
- Publication date Dec 12, 2024
- International Business Machines Corporation
- Kangguo Cheng
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING BACKSIDE SIGNAL WIRING AND FRONTSIDE...
- Publication number 20240404950
- Publication date Dec 5, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALED 2T DRAM
- Publication number 20240386943
- Publication date Nov 21, 2024
- International Business Machines Corporation
- Min Gyu Sung
- G11 - INFORMATION STORAGE
Information Patent Application
NANOWIRE FLASH MEMORY WITH SEPARATED SOURCE/DRAIN REGIONS
- Publication number 20240357822
- Publication date Oct 24, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT WITH CT CUT AFTER RMG
- Publication number 20240347533
- Publication date Oct 17, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED ELECTRONIC DEVICES HAVING INDEPENDENT GATES
- Publication number 20240332082
- Publication date Oct 3, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT CUT AND WRAP AROUND CONTACT
- Publication number 20240321645
- Publication date Sep 26, 2024
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MATERIAL INCLUDING DEUTERIUM
- Publication number 20240324475
- Publication date Sep 26, 2024
- International Business Machines Corporation
- Kangguo Cheng
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND STRUCTURE OF ACCURATELY CONTROLLING CONTACT GOUGING POSI...
- Publication number 20240313070
- Publication date Sep 19, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STRUCTURES HAVING A SINGLE ACCESS TRANSISTOR FOR MULTIPLE ME...
- Publication number 20240284687
- Publication date Aug 22, 2024
- International Business Machines Corporation
- Min Gyu Sung
Information Patent Application
FERROELECTRIC-RAM WITH INTEGRATED DOMAIN REVERSAL CATALYST
- Publication number 20240224539
- Publication date Jul 4, 2024
- International Business Machines Corporation
- Julien Frougier
- G11 - INFORMATION STORAGE
Information Patent Application
BACKSIDE CONTACTS FOR STACKED FIELD EFFECT TRANSISTORS
- Publication number 20240222227
- Publication date Jul 4, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTORS HAVING SELF ALIGNED BACKSIDE CONTACT WITH BACKS...
- Publication number 20240213248
- Publication date Jun 27, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL WITH A VARIABLE ELEMENT AND A PHASE CHANGE MEMORY
- Publication number 20240215462
- Publication date Jun 27, 2024
- International Business Machines Corporation
- Ning Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE TIE-DOWN FOR TOP FIELD EFFECT TRANSISTOR
- Publication number 20240203992
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-RESISTANCE VIA TO BACKSIDE POWER RAIL
- Publication number 20240203879
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO FORM VIA TO BACKSIDE POWER RAIL WITHOUT SHO...
- Publication number 20240204008
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED ReRAM WITH BACKSIDE CONTACT
- Publication number 20240196627
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREVENTING SOURCE/DRAIN EPI MERGE WITHOUT CELL SIZE INCREASE
- Publication number 20240194677
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

PCM cell with nanoheater surrounded with airgaps

Phase change memory with concentric ring-shaped heater

Air gap spacer formation for nano-scale semiconductor devices

Reducing contact resistance of phase change memory bridge cell

Phase change memory with conductive rings

Phase change memory with multi-level programming

Dual strained semiconductor substrate and patterning

Stacked FET with independent gate control

Uniform interfacial layer on vertical fin sidewalls of vertical tra...

Vertical field-effect transistor with wrap-around contact structure

Forming N-type and P-type horizontal gate-all-around devices

Vertical transistor with late source/drain epitaxy

Vertical fin field effect transistor devices with reduced top sourc...

Phase change memory cell with an airgap to allow for the expansion...

Confining filament at pillar center for memory devices

Semiconductor structure having bottom isolation and enhanced carrie...

Field-effect transistor with punchthrough stop region

Isolation structure for stacked vertical transistors

Nanosheet transistor

Vertical field effect transistor including integrated antifuse

Nanotip filament confinement

Strained superlattice

Forming stacked nanosheet semiconductor devices with optimal crysta...

Filament confinement in resistive random access memory

Work function metal patterning for nanosheet CFETs

Nanosheet IC device with single diffusion break

Varactor integrated with complementary metal-oxide semiconductor de...

Nanosheet transistor with inner spacers

Vertical transistor with self-aligned gate

Hybrid non-volatile memory cell

Patents Applicationslast 30 patents

SPACER MODIFICATION FOR SELECTIVE AIRGAP SPACER FORMATION

SELECTIVE DEPOSITION OF GRAPHENE ON COBALT-CAPPED COPPER DUAL DAMAS...

NANOSHEET DEVICE WITH ALIGNED ISOLATION AND EPITAXIAL GROWTH

NANOSHEET BASED EXTENDED-GATE DEVICE INTEGRATION

WORK FUNCTION METAL PATTERNING AND GATE CUT FOR NANOSHEET DEVICE

WORK FUNCTION METAL PATTERNING AND MIDDLE-OF-LINE SELF-ALIGNED CONT...

TRENCH ISOLATION FOR BACKSIDE CONTACT FORMATION

SRAM FORMATION FOR VERTICAL FET TRANSISTOR WITH BACKSIDE CONTACT

GATE CUT OF SELF-ALIGNED CONTACT POST REPLACEMENT METAL GATE

INTEGRATED TRANSISTOR HAVING AN OVER-THE-CHANNEL ETCH-STOP ISOLATIO...

NANOSHEET TRANSISTOR

PHASE CHANGE MEMORY CELL

SEMICONDUCTOR DEVICE INCLUDING BACKSIDE SIGNAL WIRING AND FRONTSIDE...

SCALED 2T DRAM

NANOWIRE FLASH MEMORY WITH SEPARATED SOURCE/DRAIN REGIONS

SELF-ALIGNED CONTACT WITH CT CUT AFTER RMG

STACKED ELECTRONIC DEVICES HAVING INDEPENDENT GATES

CONTACT CUT AND WRAP AROUND CONTACT

PHASE CHANGE MATERIAL INCLUDING DEUTERIUM

METHOD AND STRUCTURE OF ACCURATELY CONTROLLING CONTACT GOUGING POSI...

MEMORY STRUCTURES HAVING A SINGLE ACCESS TRANSISTOR FOR MULTIPLE ME...

FERROELECTRIC-RAM WITH INTEGRATED DOMAIN REVERSAL CATALYST

BACKSIDE CONTACTS FOR STACKED FIELD EFFECT TRANSISTORS

STACKED TRANSISTORS HAVING SELF ALIGNED BACKSIDE CONTACT WITH BACKS...

MEMORY CELL WITH A VARIABLE ELEMENT AND A PHASE CHANGE MEMORY

GATE TIE-DOWN FOR TOP FIELD EFFECT TRANSISTOR

LOW-RESISTANCE VIA TO BACKSIDE POWER RAIL

STRUCTURE AND METHOD TO FORM VIA TO BACKSIDE POWER RAIL WITHOUT SHO...

EMBEDDED ReRAM WITH BACKSIDE CONTACT

PREVENTING SOURCE/DRAIN EPI MERGE WITHOUT CELL SIZE INCREASE