Juntao Li

Person

Cohoes, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Vertical fin field effect transistor devices with reduced top sourc...
- Patent number 11,978,783
- Issue date May 7, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory cell with an airgap to allow for the expansion...
- Patent number 11,963,469
- Issue date Apr 16, 2024
- International Business Machines Corporation
- Kangguo Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Confining filament at pillar center for memory devices
- Patent number 11,937,522
- Issue date Mar 19, 2024
- International Business Machines Corporation
- Dexin Kong
Information Patent Grant
Field-effect transistor with punchthrough stop region
- Patent number 11,923,438
- Issue date Mar 5, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having bottom isolation and enhanced carrie...
- Patent number 11,923,363
- Issue date Mar 5, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for stacked vertical transistors
- Patent number 11,908,890
- Issue date Feb 20, 2024
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor
- Patent number 11,901,438
- Issue date Feb 13, 2024
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Vertical field effect transistor including integrated antifuse
- Patent number 11,882,695
- Issue date Jan 23, 2024
- Samsung Electronics Co., Ltd.
- Kangguo Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Nanotip filament confinement
- Patent number 11,877,524
- Issue date Jan 16, 2024
- International Business Machines Corporation
- Juntao Li
Information Patent Grant
Strained superlattice
- Patent number 11,848,357
- Issue date Dec 19, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming stacked nanosheet semiconductor devices with optimal crysta...
- Patent number 11,837,604
- Issue date Dec 5, 2023
- International Business Machine Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Filament confinement in resistive random access memory
- Patent number 11,812,675
- Issue date Nov 7, 2023
- International Business Machines Corporation
- Juntao Li
Information Patent Grant
Work function metal patterning for nanosheet CFETs
- Patent number 11,798,851
- Issue date Oct 24, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet IC device with single diffusion break
- Patent number 11,791,199
- Issue date Oct 17, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varactor integrated with complementary metal-oxide semiconductor de...
- Patent number 11,791,342
- Issue date Oct 17, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor with inner spacers
- Patent number 11,764,265
- Issue date Sep 19, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor with self-aligned gate
- Patent number 11,728,433
- Issue date Aug 15, 2023
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid non-volatile memory cell
- Patent number 11,696,518
- Issue date Jul 4, 2023
- International Business Machines Corporation
- Kangguo Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Forming single and double diffusion breaks for fin field-effect tra...
- Patent number 11,695,038
- Issue date Jul 4, 2023
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming first and second contacts self-aligned top source...
- Patent number 11,688,775
- Issue date Jun 27, 2023
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory cell with an airgap to allow for the expansion...
- Patent number 11,690,305
- Issue date Jun 27, 2023
- International Business Machines Corporation
- Kangguo Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Stacked nanosheet complementary metal oxide semiconductor field eff...
- Patent number 11,682,674
- Issue date Jun 20, 2023
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical phase change bridge memory cell
- Patent number 11,683,998
- Issue date Jun 20, 2023
- International Business Machines Corporation
- Juntao Li
Information Patent Grant
Field effect transistor devices with self-aligned source/drain cont...
- Patent number 11,682,582
- Issue date Jun 20, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having wrap-around source/drain contacts
- Patent number 11,677,026
- Issue date Jun 13, 2023
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated switch using stacked phase change materials
- Patent number 11,665,987
- Issue date May 30, 2023
- International Business Machines Corporation
- Juntao Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Air gap spacer formation for nano-scale semiconductor devices
- Patent number 11,658,062
- Issue date May 23, 2023
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor with asymmetric gate stack
- Patent number 11,652,156
- Issue date May 16, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random-access memory cell and manufacturing method thereof
- Patent number 11,637,238
- Issue date Apr 25, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Airgap vertical transistor without structural collapse
- Patent number 11,637,179
- Issue date Apr 25, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN CONTACT
- Publication number 20240153990
- Publication date May 9, 2024
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY DEVICE WITH CONDUCTIVE CLADDING
- Publication number 20240147874
- Publication date May 2, 2024
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL WITH HEATER
- Publication number 20240130256
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL SIDEWALL HEATER
- Publication number 20240107900
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BACKSIDE CONTACT
- Publication number 20240096891
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET STACKS WITH DIELECTRIC ISOLATION LAYERS
- Publication number 20240096952
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP SPACER FORMATION FOR NANO-SCALE SEMICONDUCTOR DEVICES
- Publication number 20240079266
- Publication date Mar 7, 2024
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK SIDE PHASE CHANGE MEMORY
- Publication number 20240074333
- Publication date Feb 29, 2024
- International Business Machines Corporation
- Carl Radens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL PHASE CHANGE MEMORY DEVICE
- Publication number 20240065119
- Publication date Feb 22, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VTFET WITH REDUCED PARASITIC CAPACITANCE
- Publication number 20240021609
- Publication date Jan 18, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION METAL PATTERNING FOR NANOSHEET CFETS
- Publication number 20240006245
- Publication date Jan 4, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH 2-DIMENSIONAL ELECTRON GAS CHANNELS
- Publication number 20240006502
- Publication date Jan 4, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ROBUST INNER SPACER
- Publication number 20240006496
- Publication date Jan 4, 2024
- International Business Machines Corporation
- SHOGO MOCHIZUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOME-SHAPED PHASE CHANGE MEMORY MUSHROOM CELL
- Publication number 20230413694
- Publication date Dec 21, 2023
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR WITH STRAINED CHANNEL
- Publication number 20230411523
- Publication date Dec 21, 2023
- International Business Machines Corporation
- SHOGO MOCHIZUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW CURRENT PHASE-CHANGE MEMORY DEVICE
- Publication number 20230397510
- Publication date Dec 7, 2023
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HORIZONTALLY STACKED NANOSHEET GATE ALL AROUND DEVICE STRUCTURE
- Publication number 20230307521
- Publication date Sep 28, 2023
- International Business Machines Corporation
- SHOGO MOCHIZUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY WITH MULTI-LEVEL PROGRAMMING
- Publication number 20230301207
- Publication date Sep 21, 2023
- International Business Machines Corporation
- Ching-Tzu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL WITH AN AIRGAP TO ALLOW FOR THE EXPANSION...
- Publication number 20230284542
- Publication date Sep 7, 2023
- International Business Machines Corporation
- Kangguo Cheng
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MEMORY WITH REDUCED PROGRAMMING CURRENT
- Publication number 20230284543
- Publication date Sep 7, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HAVING WRAP-AROUND SOURCE/DRAIN CONTACTS
- Publication number 20230275152
- Publication date Aug 31, 2023
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFINED PHASE-CHANGE MEMORY CELL WITH SELF-ALIGNED ELECTRODE AND R...
- Publication number 20230263080
- Publication date Aug 17, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY STACKED FET WITH STRAINED CHANNEL
- Publication number 20230260971
- Publication date Aug 17, 2023
- International Business Machines Corporation
- SHOGO MOCHIZUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED SUPERLATTICE
- Publication number 20230238431
- Publication date Jul 27, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY AND HORIZONTALLY STACKED DEVICE STRUCTURES
- Publication number 20230207703
- Publication date Jun 29, 2023
- International Business Machines Corporation
- SHOGO MOCHIZUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET DEVICE HAVING TWO BOTTOM ISOLATION LAYERS
- Publication number 20230207652
- Publication date Jun 29, 2023
- International Business Machines Corporation
- SHOGO MOCHIZUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED STAIRCASE CMOS WITH BURIED POWER RAIL
- Publication number 20230207468
- Publication date Jun 29, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BRIDGE CELL PHASE CHANGE MEMORY
- Publication number 20230200266
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PCM CELL WITH NANOHEATER SURROUNDED WITH AIRGAPS
- Publication number 20230189672
- Publication date Jun 15, 2023
- International Business Machines Corporation
- JUNTAO LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED COMPLEMENTARY TRANSISTOR STRUCTURE FOR THREE-DIMENSIONAL IN...
- Publication number 20230187551
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Vertical fin field effect transistor devices with reduced top sourc...

Phase change memory cell with an airgap to allow for the expansion...

Confining filament at pillar center for memory devices

Field-effect transistor with punchthrough stop region

Semiconductor structure having bottom isolation and enhanced carrie...

Isolation structure for stacked vertical transistors

Nanosheet transistor

Vertical field effect transistor including integrated antifuse

Nanotip filament confinement

Strained superlattice

Forming stacked nanosheet semiconductor devices with optimal crysta...

Filament confinement in resistive random access memory

Work function metal patterning for nanosheet CFETs

Nanosheet IC device with single diffusion break

Varactor integrated with complementary metal-oxide semiconductor de...

Nanosheet transistor with inner spacers

Vertical transistor with self-aligned gate

Hybrid non-volatile memory cell

Forming single and double diffusion breaks for fin field-effect tra...

Method of forming first and second contacts self-aligned top source...

Phase change memory cell with an airgap to allow for the expansion...

Stacked nanosheet complementary metal oxide semiconductor field eff...

Vertical phase change bridge memory cell

Field effect transistor devices with self-aligned source/drain cont...

Transistor having wrap-around source/drain contacts

Integrated switch using stacked phase change materials

Air gap spacer formation for nano-scale semiconductor devices

Nanosheet transistor with asymmetric gate stack

Resistive random-access memory cell and manufacturing method thereof

Airgap vertical transistor without structural collapse

Patents Applicationslast 30 patents

FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN CONTACT

PHASE-CHANGE MEMORY DEVICE WITH CONDUCTIVE CLADDING

PHASE CHANGE MEMORY CELL WITH HEATER

PHASE CHANGE MEMORY CELL SIDEWALL HEATER

SELF-ALIGNED BACKSIDE CONTACT

NANOSHEET STACKS WITH DIELECTRIC ISOLATION LAYERS

AIR GAP SPACER FORMATION FOR NANO-SCALE SEMICONDUCTOR DEVICES

BACK SIDE PHASE CHANGE MEMORY

VERTICAL PHASE CHANGE MEMORY DEVICE

VTFET WITH REDUCED PARASITIC CAPACITANCE

WORK FUNCTION METAL PATTERNING FOR NANOSHEET CFETS

FIELD EFFECT TRANSISTORS WITH 2-DIMENSIONAL ELECTRON GAS CHANNELS

SEMICONDUCTOR DEVICE WITH ROBUST INNER SPACER

DOME-SHAPED PHASE CHANGE MEMORY MUSHROOM CELL

VERTICAL FIELD EFFECT TRANSISTOR WITH STRAINED CHANNEL

LOW CURRENT PHASE-CHANGE MEMORY DEVICE

HORIZONTALLY STACKED NANOSHEET GATE ALL AROUND DEVICE STRUCTURE

PHASE CHANGE MEMORY WITH MULTI-LEVEL PROGRAMMING

PHASE CHANGE MEMORY CELL WITH AN AIRGAP TO ALLOW FOR THE EXPANSION...

PHASE CHANGE MEMORY WITH REDUCED PROGRAMMING CURRENT

TRANSISTOR HAVING WRAP-AROUND SOURCE/DRAIN CONTACTS

CONFINED PHASE-CHANGE MEMORY CELL WITH SELF-ALIGNED ELECTRODE AND R...

VERTICALLY STACKED FET WITH STRAINED CHANNEL

STRAINED SUPERLATTICE

VERTICALLY AND HORIZONTALLY STACKED DEVICE STRUCTURES

NANOSHEET DEVICE HAVING TWO BOTTOM ISOLATION LAYERS

STACKED STAIRCASE CMOS WITH BURIED POWER RAIL

BRIDGE CELL PHASE CHANGE MEMORY

PCM CELL WITH NANOHEATER SURROUNDED WITH AIRGAPS

STACKED COMPLEMENTARY TRANSISTOR STRUCTURE FOR THREE-DIMENSIONAL IN...