Kam Hong Lui

Person

Santa Clara, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with trench-like feed-throughs
- Patent number 10,032,901
- Issue date Jul 24, 2018
- Vishay-Siliconix
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with trench-like feed-throughs
- Patent number 9,306,056
- Issue date Apr 5, 2016
- Vishay Siliconix
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench metal oxide semiconductor with recessed trench material and...
- Patent number 8,883,580
- Issue date Nov 11, 2014
- Vishay Siliconix
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench metal oxide semiconductor with recessed trench material and...
- Patent number 8,368,126
- Issue date Feb 5, 2013
- Vishay Siliconix
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked trench metal-oxide-semiconductor field effect transistor de...
- Patent number 8,183,629
- Issue date May 22, 2012
- Vishay Siliconix
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating super trench MOSFET including buried source e...
- Patent number 7,704,836
- Issue date Apr 27, 2010
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super trench MOSFET including buried source electrode
- Patent number 7,557,409
- Issue date Jul 7, 2009
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gated MIS device having thick polysilicon insulation layer a...
- Patent number 7,494,876
- Issue date Feb 24, 2009
- Vishay Siliconix
- Frederick Perry Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a drain side gate trench metal-oxide-semico...
- Patent number 7,344,945
- Issue date Mar 18, 2008
- Vishay Siliconix
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super trench MOSFET including buried source electrode and method of...
- Patent number 7,183,610
- Issue date Feb 27, 2007
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned differential oxidation in trenches by ion implantation
- Patent number 7,012,005
- Issue date Mar 14, 2006
- Siliconix Incorporated
- Karl Lichtenberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making trench MIS device with reduced gate-to-drain capa...
- Patent number 6,921,697
- Issue date Jul 26, 2005
- Siliconix Incorporated
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain side gate trench metal-oxide-semiconductor field effect trans...
- Patent number 6,906,380
- Issue date Jun 14, 2005
- Vishay Siliconix
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MIS device with graduated gate oxide layer
- Patent number 6,903,412
- Issue date Jun 7, 2005
- Siliconix Incorporated
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MIS device with reduced gate-to-drain capacitance
- Patent number 6,882,000
- Issue date Apr 19, 2005
- Siliconix Incorporated
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating trench MIS device with graduated gate oxide l...
- Patent number 6,875,657
- Issue date Apr 5, 2005
- Siliconix Incorporated
- Christiana Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MIS device with active trench corners and thick bottom oxide
- Patent number 6,849,898
- Issue date Feb 1, 2005
- Siliconix Incorporated
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thicker oxide formation at the trench bottom by selective oxide dep...
- Patent number 6,709,930
- Issue date Mar 23, 2004
- Siliconix Incorporated
- Ben Chan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE WITH TRENCH-LIKE FEED-THROUGHS
- Publication number 20170025527
- Publication date Jan 26, 2017
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH METAL OXIDE SEMICONDUCTOR WITH RECESSED TRENCH MATERIAL AND...
- Publication number 20140235023
- Publication date Aug 21, 2014
- VISHAY-SILICONIX
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH TRENCH-LIKE FEED-THROUGHS
- Publication number 20110101525
- Publication date May 5, 2011
- VISHAY-SILICONIX
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating super trench MOSFET including buried source e...
- Publication number 20100019316
- Publication date Jan 28, 2010
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stacked Trench Metal-Oxide-Semiconductor Field Effect Transistor De...
- Publication number 20090050960
- Publication date Feb 26, 2009
- VISHAY-SILICONIX
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH METAL OXIDE SEMICONDUCTOR WITH RECESSED TRENCH MATERIAL AND...
- Publication number 20080258212
- Publication date Oct 23, 2008
- VISHAY-SILICONIX
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating super trench MOSFET including buried source e...
- Publication number 20080182376
- Publication date Jul 31, 2008
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Super trench MOSFET including buried source electrode and method of...
- Publication number 20070187753
- Publication date Aug 16, 2007
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Super trench MOSFET including buried source electrode and method of...
- Publication number 20050242392
- Publication date Nov 3, 2005
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THICKER OXIDE FORMATION AT THE TRENCH BOTTOM BY SELECTIVE OXIDE DEP...
- Publication number 20030235958
- Publication date Dec 25, 2003
- Siliconix Incorporated
- Ben Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for making trench MIS device with reduced gate-to-drain capa...
- Publication number 20030062570
- Publication date Apr 3, 2003
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench MIS device with graduated gate oxide layer
- Publication number 20030030104
- Publication date Feb 13, 2003
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating trench MIS device with graduated gate oxide l...
- Publication number 20030032248
- Publication date Feb 13, 2003
- Christiana Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench MIS device with reduced gate-to-drain capacitance
- Publication number 20030030092
- Publication date Feb 13, 2003
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench MIS device with active trench corners and thick bottom oxide...
- Publication number 20030032247
- Publication date Feb 13, 2003
- Siliconix inorporated
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS

Kam Hong Lui

Person

Patents Grantslast 30 patents

Semiconductor device with trench-like feed-throughs

Semiconductor device with trench-like feed-throughs

Trench metal oxide semiconductor with recessed trench material and...

Trench metal oxide semiconductor with recessed trench material and...

Stacked trench metal-oxide-semiconductor field effect transistor de...

Method of fabricating super trench MOSFET including buried source e...

Super trench MOSFET including buried source electrode

Trench-gated MIS device having thick polysilicon insulation layer a...

Method of manufacturing a drain side gate trench metal-oxide-semico...

Super trench MOSFET including buried source electrode and method of...

Self-aligned differential oxidation in trenches by ion implantation

Method for making trench MIS device with reduced gate-to-drain capa...

Drain side gate trench metal-oxide-semiconductor field effect trans...

Trench MIS device with graduated gate oxide layer

Trench MIS device with reduced gate-to-drain capacitance

Method of fabricating trench MIS device with graduated gate oxide l...

Trench MIS device with active trench corners and thick bottom oxide

Thicker oxide formation at the trench bottom by selective oxide dep...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE WITH TRENCH-LIKE FEED-THROUGHS

TRENCH METAL OXIDE SEMICONDUCTOR WITH RECESSED TRENCH MATERIAL AND...

SEMICONDUCTOR DEVICE WITH TRENCH-LIKE FEED-THROUGHS

Method of fabricating super trench MOSFET including buried source e...

Stacked Trench Metal-Oxide-Semiconductor Field Effect Transistor De...

TRENCH METAL OXIDE SEMICONDUCTOR WITH RECESSED TRENCH MATERIAL AND...

Method of fabricating super trench MOSFET including buried source e...

Super trench MOSFET including buried source electrode and method of...

Super trench MOSFET including buried source electrode and method of...

THICKER OXIDE FORMATION AT THE TRENCH BOTTOM BY SELECTIVE OXIDE DEP...

Method for making trench MIS device with reduced gate-to-drain capa...

Trench MIS device with graduated gate oxide layer

Method of fabricating trench MIS device with graduated gate oxide l...

Trench MIS device with reduced gate-to-drain capacitance

Trench MIS device with active trench corners and thick bottom oxide...