Katsunori Onishi

Person

Fishkill, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Short channel and long channel devices
- Patent number 10,741,668
- Issue date Aug 11, 2020
- GLOBALFOUNDRIES Inc.
- Bala Haran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut inside replacement metal gate trench to mitigate N-P proximity...
- Patent number 10,658,363
- Issue date May 19, 2020
- GLOBALFOUNDRIES Inc.
- Balaji Kannan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut inside replacement metal gate trench to mitigate N-P proximity...
- Patent number 10,446,550
- Issue date Oct 15, 2019
- GLOBALFOUNDRIES Inc.
- Balaji Kannan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration scheme for gate height control and void free RMG fill
- Patent number 10,354,928
- Issue date Jul 16, 2019
- GLOBALFOUNDRIES Inc.
- Suraj Kumar Patil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a protection device having an inner contact spac...
- Patent number 10,242,982
- Issue date Mar 26, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration scheme for gate height control and void free RMG fill
- Patent number 10,056,303
- Issue date Aug 21, 2018
- GLOBALFOUNDRIES Inc.
- Suraj Kumar Patil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Performance optimized gate structures having memory device and logi...
- Patent number 9,761,679
- Issue date Sep 12, 2017
- International Business Machines Corporation
- Paul Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming performance optimized gate structures by silicidi...
- Patent number 9,735,058
- Issue date Aug 15, 2017
- International Business Machines Corporation
- Paul Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming performance optimized gate structures by silicidi...
- Patent number 9,455,195
- Issue date Sep 27, 2016
- International Business Machines Corporation
- Paul Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric stressor DRAM
- Patent number 9,240,482
- Issue date Jan 19, 2016
- GLOBALFOUNDRIES Inc.
- Ravi K. Dasaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low energy ion implantation of a junction butting region
- Patent number 9,136,321
- Issue date Sep 15, 2015
- International Business Machines Corporation
- Shreesh Narasimha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of forming the structure
- Patent number 7,932,144
- Issue date Apr 26, 2011
- International Business Machines Corporation
- Yaocheng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of forming the structure
- Patent number 7,714,358
- Issue date May 11, 2010
- International Business Machines Corporation
- Yaocheng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming gate oxides having multiple thicknesses
- Patent number 7,160,771
- Issue date Jan 9, 2007
- International Business Machines Corporation
- Anthony I-Chih Chou
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CUT INSIDE REPLACEMENT METAL GATE TRENCH TO MITIGATE N-P PROXIMITY...
- Publication number 20190393221
- Publication date Dec 26, 2019
- GLOBALFOUNDRIES INC.
- Balaji KANNAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING IC STRUCTURE HAVING RECESSED GATE SPACERS AND R...
- Publication number 20190131424
- Publication date May 2, 2019
- GLOBALFOUNDRIES INC.
- Guowei Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CUT INSIDE REPLACEMENT METAL GATE TRENCH TO MITIGATE N-P PROXIMITY...
- Publication number 20190115346
- Publication date Apr 18, 2019
- GLOBALFOUNDRIES INC.
- Balaji KANNAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK PROCESSES AND STRUCTURES
- Publication number 20190096679
- Publication date Mar 28, 2019
- GLOBALFOUNDRIES INC.
- Balaji Kannan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT METAL GATE MODULE
- Publication number 20190027578
- Publication date Jan 24, 2019
- GLOBALFOUNDRIES Inc.
- Bala HARAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION SCHEME FOR GATE HEIGHT CONTROL AND VOID FREE RMG FILL
- Publication number 20180323113
- Publication date Nov 8, 2018
- GLOBALFOUNDRIES INC.
- Suraj Kumar PATIL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A PROTECTION DEVICE HAVING AN INNER CONTACT SPAC...
- Publication number 20180261595
- Publication date Sep 13, 2018
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD, APPARATUS AND SYSTEM FOR PROVIDING NITRIDE CAP LAYER IN REP...
- Publication number 20170338325
- Publication date Nov 23, 2017
- GLOBALFOUNDRIES INC.
- Huy Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERFORMANCE OPTIMIZED GATE STRUCTURES
- Publication number 20160322258
- Publication date Nov 3, 2016
- International Business Machines Corporation
- Paul CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERFORMANCE OPTIMIZED GATE STRUCTURES
- Publication number 20160197144
- Publication date Jul 7, 2016
- International Business Machines Corporation
- Paul CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERFORMANCE OPTIMIZED GATE STRUCTURES
- Publication number 20160163599
- Publication date Jun 9, 2016
- International Business Machines Corporation
- Paul CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC STRESSOR DRAM
- Publication number 20150349121
- Publication date Dec 3, 2015
- International Business Machines Corporation
- Ravi K. Dasaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW ENERGY ION IMPLANTATION OF A JUNCTION BUTTING REGION
- Publication number 20150348974
- Publication date Dec 3, 2015
- GLOBALFOUNDRIES INC.
- Shreesh Narasimha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC STRESSOR DRAM
- Publication number 20150348972
- Publication date Dec 3, 2015
- International Business Machines Corporation
- Shreesh Narasimha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE STRUCTURE
- Publication number 20100112766
- Publication date May 6, 2010
- International Business Machines Corporation
- Yaocheng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE STRUCTURE
- Publication number 20080191243
- Publication date Aug 14, 2008
- International Business Machines Corporation
- Yaocheng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REDUCING TOP NOTCHING EFFECTS IN PRE-DOPED GATE STRUCTURES
- Publication number 20080188089
- Publication date Aug 7, 2008
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming gate oxides having multiple thicknesses
- Publication number 20050118764
- Publication date Jun 2, 2005
- Anthony I-Chih Chou
- H01 - BASIC ELECTRIC ELEMENTS

Katsunori Onishi

Person

Patents Grantslast 30 patents

Short channel and long channel devices

Cut inside replacement metal gate trench to mitigate N-P proximity...

Cut inside replacement metal gate trench to mitigate N-P proximity...

Integration scheme for gate height control and void free RMG fill

Method for forming a protection device having an inner contact spac...

Integration scheme for gate height control and void free RMG fill

Performance optimized gate structures having memory device and logi...

Method of forming performance optimized gate structures by silicidi...

Method of forming performance optimized gate structures by silicidi...

Asymmetric stressor DRAM

Low energy ion implantation of a junction butting region

Semiconductor structure and method of forming the structure

Semiconductor structure and method of forming the structure

Forming gate oxides having multiple thicknesses

Patents Applicationslast 30 patents

CUT INSIDE REPLACEMENT METAL GATE TRENCH TO MITIGATE N-P PROXIMITY...

METHODS FOR FORMING IC STRUCTURE HAVING RECESSED GATE SPACERS AND R...

CUT INSIDE REPLACEMENT METAL GATE TRENCH TO MITIGATE N-P PROXIMITY...

GATE STACK PROCESSES AND STRUCTURES

REPLACEMENT METAL GATE MODULE

INTEGRATION SCHEME FOR GATE HEIGHT CONTROL AND VOID FREE RMG FILL

METHOD FOR FORMING A PROTECTION DEVICE HAVING AN INNER CONTACT SPAC...

METHOD, APPARATUS AND SYSTEM FOR PROVIDING NITRIDE CAP LAYER IN REP...

PERFORMANCE OPTIMIZED GATE STRUCTURES

PERFORMANCE OPTIMIZED GATE STRUCTURES

PERFORMANCE OPTIMIZED GATE STRUCTURES

ASYMMETRIC STRESSOR DRAM

LOW ENERGY ION IMPLANTATION OF A JUNCTION BUTTING REGION

ASYMMETRIC STRESSOR DRAM

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE STRUCTURE

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE STRUCTURE

METHOD FOR REDUCING TOP NOTCHING EFFECTS IN PRE-DOPED GATE STRUCTURES

Forming gate oxides having multiple thicknesses