Katsuomi SHIOZAWA

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Nitride semiconductor device having a silicon-containing layer and...
- Patent number 8,163,576
- Issue date Apr 24, 2012
- Mitsubishi Electric Corporation
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing nitride semiconductor light-emitting element
- Patent number 7,964,424
- Issue date Jun 21, 2011
- Mitsubishi Electric Corporation
- Kyozo Kanamoto
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nitride semiconductor device including an electrode in ohmic contac...
- Patent number 7,939,943
- Issue date May 10, 2011
- Mitsubishi Electric Corporation
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and method of manufacturing the same
- Patent number 7,842,962
- Issue date Nov 30, 2010
- Mitsubishi Denki Kabushiki Kaisha
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 7,795,738
- Issue date Sep 14, 2010
- Mitsubishi Electric Corporation
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and manufacturing method of the same
- Patent number 7,791,097
- Issue date Sep 7, 2010
- Mitsubishi Electric Corporation
- Kyozo Kanamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and method of manufacturing the same
- Patent number 7,714,439
- Issue date May 11, 2010
- Mitsubishi Electric Corporation
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device having a silicon-containing connection...
- Patent number 7,683,398
- Issue date Mar 23, 2010
- Mitsubishi Electric Corporation
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device including gallium-nitr...
- Patent number 7,678,597
- Issue date Mar 16, 2010
- Mitsubishi Electric Corporation
- Kenichi Ohtsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and manufacturing method thereof
- Patent number 7,582,908
- Issue date Sep 1, 2009
- Mitsubishi Electric Corporation
- Kyozo Kanamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor optical device
- Patent number 7,456,039
- Issue date Nov 25, 2008
- Mitsubishi Electric Corporation
- Kazushige Kawasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing nitride semiconductor device
- Patent number 7,378,351
- Issue date May 27, 2008
- Mitsubishi Denki Kabushiki Kaisha
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including trench with at least one of an edge...
- Patent number 7,067,874
- Issue date Jun 27, 2006
- Mitsubishi Denki Kabushiki Kaisha
- Katsumi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device including steps of for...
- Patent number 6,890,837
- Issue date May 10, 2005
- Renesas Technology Corp.
- Takashi Kuroi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device including steps of for...
- Patent number 6,737,315
- Issue date May 18, 2004
- Renesas Technology Corp.
- Takashi Kuroi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a trench with at least one of an edg...
- Patent number 6,710,401
- Issue date Mar 23, 2004
- Mitsubishi Denki Kabushiki Kaisha
- Katsumi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 6,707,099
- Issue date Mar 16, 2004
- Renesas Technology Corp.
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including inversely tapered gate electrode and...
- Patent number 6,661,066
- Issue date Dec 9, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Takashi Kuroi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device achieving reduced wiring length and reduced wi...
- Patent number 6,548,871
- Issue date Apr 15, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Katsuyuki Horita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a buried-channel MOS structure
- Patent number 6,518,623
- Issue date Feb 11, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Hidekazu Oda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 6,518,635
- Issue date Feb 11, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 6,482,718
- Issue date Nov 19, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method and semiconductor device
- Patent number 6,387,743
- Issue date May 14, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 6,383,884
- Issue date May 7, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method and semiconductor device
- Patent number 6,333,540
- Issue date Dec 25, 2001
- Mitsubishi Denki Kabushiki Kaisha
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising trench isolation insulator film and...
- Patent number 6,245,641
- Issue date Jun 12, 2001
- Mitsubishi Denki Kabushiki Kaisha
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including trench isolation structure and a met...
- Patent number 6,081,662
- Issue date Jun 27, 2000
- Mitsubishi Denki Kabushiki Kaisha
- Takaaki Murakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a truck MOS gate or a power semiconductor device
- Patent number 5,783,491
- Issue date Jul 21, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Katsumi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating same
- Patent number 5,578,522
- Issue date Nov 26, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Katsumi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate type insulated gate bipolar transistor
- Patent number 5,508,534
- Issue date Apr 16, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Katsumi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE HAVING A SILICON-CONTAINING LAYER AND...
- Publication number 20100129991
- Publication date May 27, 2010
- MITSUBISHI ELECTRIC CORPORATION
- Katsuomi SHIOZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR PRODUCING NITRIDE SEMICONDUCTOR LASER, AND NITRIDE SEMI...
- Publication number 20090245311
- Publication date Oct 1, 2009
- MITSUBISHI ELECTRIC CORPORATION
- Kyozo KANAMOTO
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20090170304
- Publication date Jul 2, 2009
- Mitsubishi Electric Corporation
- Yoichiro Tarui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20090160054
- Publication date Jun 25, 2009
- Mitsubishi Electric Corporation
- Katsuomi Shiozawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20090146308
- Publication date Jun 11, 2009
- Mitsubishi Electric Corporation
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20090140389
- Publication date Jun 4, 2009
- Mitsubishi Electric Corporation
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20090142871
- Publication date Jun 4, 2009
- Mitsubishi Electric Corporation
- Kenichi Ohtsuka
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
- Publication number 20090130790
- Publication date May 21, 2009
- Mitsubishi Electric Corporation
- Kyozo Kanamoto
- B82 - NANO-TECHNOLOGY
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20090127661
- Publication date May 21, 2009
- Mitsubishi Electric Corporation
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE
- Publication number 20080311694
- Publication date Dec 18, 2008
- Mitsubishi Electric Corporation
- Kazushige Kawasaki
- B82 - NANO-TECHNOLOGY
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20080211062
- Publication date Sep 4, 2008
- MITSUBISHI ELECTRIC CORPORATION
- Katsuomi SHIOZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20080116575
- Publication date May 22, 2008
- MITSUBISHI ELECTRIC CORPORATION
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20080023799
- Publication date Jan 31, 2008
- MITSUBISHI ELECTRIC CORPORATION
- Kyozo KANAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20070231978
- Publication date Oct 4, 2007
- MITSUBISHI ELECTRIC CORPORATION
- Kyozo KANAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride semiconductor device and method of manufacturing the same
- Publication number 20060108596
- Publication date May 25, 2006
- Mitsubishi Denki Kabushiki Kaisha
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20060027883
- Publication date Feb 9, 2006
- Renesas Technology Corp.
- Takashi Kuroi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing nitride semiconductor device
- Publication number 20060003490
- Publication date Jan 5, 2006
- Mitsubishi Denki Kabushiki Kaisha
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20040092057
- Publication date May 13, 2004
- MITSUBISHI DENKI KABUSHIKI
- Takashi Kuroi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device including steps of for...
- Publication number 20040082165
- Publication date Apr 29, 2004
- Mitsubishi Denki Kabushiki Kaisha
- Takashi Kuroi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device including trench with at least one of an edge...
- Publication number 20030203573
- Publication date Oct 30, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Katsumi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20030127685
- Publication date Jul 10, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE ACHIEVING REDUCED WIRING LENGTH AND REDUCED WI...
- Publication number 20030075744
- Publication date Apr 24, 2003
- KATSUYUKI HORITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device including steps of for...
- Publication number 20030054597
- Publication date Mar 20, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Takashi Kuroi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20020151143
- Publication date Oct 17, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
- Publication number 20020024095
- Publication date Feb 28, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing same
- Publication number 20020020867
- Publication date Feb 21, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Katsuomi Shiozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING INVERSELY TAPERED GATE ELECTRODE AND...
- Publication number 20020008293
- Publication date Jan 24, 2002
- TAKASHI KUROI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A TRENCH MOS GATE ON A POWER SEMICONDUCTOR DEVICE
- Publication number 20010006836
- Publication date Jul 5, 2001
- Katsumi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS

Katsuomi SHIOZAWA

Person

Patents Grantslast 30 patents

Nitride semiconductor device having a silicon-containing layer and...

Method for manufacturing nitride semiconductor light-emitting element

Nitride semiconductor device including an electrode in ohmic contac...

Nitride semiconductor device and method of manufacturing the same

Nitride semiconductor device

Nitride semiconductor device and manufacturing method of the same

Nitride semiconductor device and method of manufacturing the same

Nitride semiconductor device having a silicon-containing connection...

Method of manufacturing semiconductor device including gallium-nitr...

Nitride semiconductor device and manufacturing method thereof

Method for manufacturing semiconductor optical device

Method of manufacturing nitride semiconductor device

Semiconductor device including trench with at least one of an edge...

Method of manufacturing semiconductor device including steps of for...

Method of manufacturing semiconductor device including steps of for...

Semiconductor device including a trench with at least one of an edg...

Semiconductor device and manufacturing method thereof

Semiconductor device including inversely tapered gate electrode and...

Semiconductor device achieving reduced wiring length and reduced wi...

Semiconductor device having a buried-channel MOS structure

Semiconductor device and manufacturing method thereof

Method of manufacturing semiconductor device

Semiconductor device manufacturing method and semiconductor device

Method of manufacturing semiconductor device

Semiconductor device manufacturing method and semiconductor device

Semiconductor device comprising trench isolation insulator film and...

Semiconductor device including trench isolation structure and a met...

Method of forming a truck MOS gate or a power semiconductor device

Semiconductor device and method of fabricating same

Trench gate type insulated gate bipolar transistor

Patents Applicationslast 30 patents

NITRIDE SEMICONDUCTOR DEVICE HAVING A SILICON-CONTAINING LAYER AND...

PROCESS FOR PRODUCING NITRIDE SEMICONDUCTOR LASER, AND NITRIDE SEMI...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT

NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE

NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Nitride semiconductor device and method of manufacturing the same

Semiconductor device and manufacturing method thereof

Method of manufacturing nitride semiconductor device

Semiconductor device and manufacturing method thereof

Method of manufacturing semiconductor device including steps of for...

Semiconductor device including trench with at least one of an edge...

Semiconductor device and manufacturing method thereof

SEMICONDUCTOR DEVICE ACHIEVING REDUCED WIRING LENGTH AND REDUCED WI...

Method of manufacturing semiconductor device including steps of for...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

Semiconductor device and method of manufacturing same

SEMICONDUCTOR DEVICE INCLUDING INVERSELY TAPERED GATE ELECTRODE AND...

METHOD OF FORMING A TRENCH MOS GATE ON A POWER SEMICONDUCTOR DEVICE