Kohji Andoh

Person

El Segundo, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Merged P-i-N Schottky structure
- Patent number 9,865,749
- Issue date Jan 9, 2018
- Siliconix Technology C.V.
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Merged P-i-N Schottky structure
- Patent number 7,858,456
- Issue date Dec 28, 2010
- Siliconix Technology C.V.
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination design with multiple spiral trench rings
- Patent number 7,196,397
- Issue date Mar 27, 2007
- International Rectifier Corporation
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fast recovery diode with a single large area p/n junction
- Patent number 7,091,572
- Issue date Aug 15, 2006
- International Rectifier Corporation
- Kohji Andoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Merged P-i-N schottky structure
- Patent number 7,071,525
- Issue date Jul 4, 2006
- International Rectifier Corporation
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for preparation of semiconductor wafer surface
- Patent number 6,991,943
- Issue date Jan 31, 2006
- International Rectifier Corporation
- Kohji Andoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Temperature-sensing diode
- Patent number 6,930,371
- Issue date Aug 16, 2005
- International Rectifier Corporation
- Fabio Necco
- G01 - MEASURING TESTING
Information Patent Grant
Process for forming fast recovery diode with a single large area P/...
- Patent number 6,927,141
- Issue date Aug 9, 2005
- International Rectifier Corporation
- Kohji Andoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench Schottky barrier diode
- Patent number 6,855,593
- Issue date Feb 15, 2005
- International Rectifier Corporation
- Kohji Andoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for counter doping N-type silicon in Schottky device Ti sil...
- Patent number 6,846,729
- Issue date Jan 25, 2005
- International Rectifier Corporation
- Kohji Andoh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Merged P-i-N Schottky structure
- Publication number 20060189107
- Publication date Aug 24, 2006
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fast recovery diode with a single large area P/N junction
- Publication number 20060017130
- Publication date Jan 26, 2006
- International Rectifier Corporation
- Kohji Andoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Termination design with multiple spiral trench rings
- Publication number 20050230777
- Publication date Oct 20, 2005
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Merged P-i-N schottky structure
- Publication number 20050161759
- Publication date Jul 28, 2005
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for preparation of semiconductor wafer surface
- Publication number 20050124085
- Publication date Jun 9, 2005
- International Rectifier Corporation
- Kohji Andoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Temperature-sensing diode
- Publication number 20040222430
- Publication date Nov 11, 2004
- International Rectifier Corporation
- Fabio Necco
- G01 - MEASURING TESTING
Information Patent Application
Process for forming fast recovery diode with a single large area P/...
- Publication number 20040077305
- Publication date Apr 22, 2004
- International Rectifier Corporation
- Kohji Andoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench schottky barrier diode
- Publication number 20040007723
- Publication date Jan 15, 2004
- International Rectifier Corp.
- Kohji Andoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for counter doping N-type silicon in Schottky device with T...
- Publication number 20030062585
- Publication date Apr 3, 2003
- International Rectifier Corp.
- Kohji Andoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low cost fast recovery diode and process of its manufacture
- Publication number 20020195613
- Publication date Dec 26, 2002
- International Rectifier Corp.
- Kohji Andoh
- H01 - BASIC ELECTRIC ELEMENTS

Kohji Andoh

Person

Patents Grantslast 30 patents

Merged P-i-N Schottky structure

Merged P-i-N Schottky structure

Termination design with multiple spiral trench rings

Fast recovery diode with a single large area p/n junction

Merged P-i-N schottky structure

Process for preparation of semiconductor wafer surface

Temperature-sensing diode

Process for forming fast recovery diode with a single large area P/...

Trench Schottky barrier diode

Process for counter doping N-type silicon in Schottky device Ti sil...

Patents Applicationslast 30 patents

Merged P-i-N Schottky structure

Fast recovery diode with a single large area P/N junction

Termination design with multiple spiral trench rings

Merged P-i-N schottky structure

Process for preparation of semiconductor wafer surface

Temperature-sensing diode

Process for forming fast recovery diode with a single large area P/...

Trench schottky barrier diode

Process for counter doping N-type silicon in Schottky device with T...

Low cost fast recovery diode and process of its manufacture