Kuk-Hwan Kim

Person

Ann Arbor, MI, US

People

Patents Grantslast 30 patents

Information Patent Grant
Three dimensional perpendicular magnetic tunnel junction with thin...
- Patent number 12,069,964
- Issue date Aug 20, 2024
- Integrated Silicon Solution, (Cayman) Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Patterned silicide structures and methods of manufacture
- Patent number 11,631,807
- Issue date Apr 18, 2023
- Integrated Silicon Solution, (Cayman) Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Error cache system with coarse and fine segments for power optimiza...
- Patent number 11,586,553
- Issue date Feb 21, 2023
- Integrated Silicon Solution, (Cayman) Inc.
- Neal Berger
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Heuristics for selecting subsegments for entry in and entry out ope...
- Patent number 11,580,014
- Issue date Feb 14, 2023
- Integrated Silicon Solution, (Cayman) Inc.
- Neal Berger
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Three dimensional perpendicular magnetic tunnel junction with thin...
- Patent number 11,417,829
- Issue date Aug 16, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
High density 3D magnetic random access memory (MRAM) cell integrati...
- Patent number 11,342,498
- Issue date May 24, 2022
- Integrated Silicon Solution (Cayman) Inc.
- Marcin Gajek
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular magnetic tunnel junction memory cells having vertical...
- Patent number 11,222,970
- Issue date Jan 11, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heuristics for selecting subsegments for entry in and entry out ope...
- Patent number 11,119,910
- Issue date Sep 14, 2021
- Spin Memory, Inc.
- Neal Berger
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Error cache system with coarse and fine segments for power optimiza...
- Patent number 11,119,936
- Issue date Sep 14, 2021
- Spin Memory, Inc.
- Neal Berger
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Patterned silicide structures and methods of manufacture
- Patent number 11,107,979
- Issue date Aug 31, 2021
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a data recording system utilizing heteroge...
- Patent number 10,971,681
- Issue date Apr 6, 2021
- Spin Memory, Inc.
- Kadriye Deniz Bozdag
- G11 - INFORMATION STORAGE
Information Patent Grant
High density MRAM integration
- Patent number 10,930,703
- Issue date Feb 23, 2021
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertically-strained silicon device for use with a perpendicular mag...
- Patent number 10,916,582
- Issue date Feb 9, 2021
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Adjustable current selectors
- Patent number 10,854,260
- Issue date Dec 1, 2020
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory system utilizing heterogeneous magnetic tunnel junction type...
- Patent number 10,847,198
- Issue date Nov 24, 2020
- Spin Memory, Inc.
- Kadriye Deniz Bozdag
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MRAM array having reference cell structure and circuitry that reinf...
- Patent number 10,847,199
- Issue date Nov 24, 2020
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flexible substrate for use with a perpendicular magnetic tunnel jun...
- Patent number 10,790,333
- Issue date Sep 29, 2020
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating dual threshold voltage devices
- Patent number 10,770,561
- Issue date Sep 8, 2020
- Spin Memory, Inc.
- Gian Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual threshold voltage devices having a first transistor and a seco...
- Patent number 10,770,510
- Issue date Sep 8, 2020
- Spin Memory, Inc.
- Gian Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density MRAM integration
- Patent number 10,686,009
- Issue date Jun 16, 2020
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming perpendicular magnetic tunnel junction memory ce...
- Patent number 10,658,425
- Issue date May 19, 2020
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a three dimensional perpendicular magnetic tunnel...
- Patent number 10,629,649
- Issue date Apr 21, 2020
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory element with voltage controlled magnetic anistropy
- Patent number 10,608,047
- Issue date Mar 31, 2020
- Spin Memory, Inc.
- Marcin Gajek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of optimizing write voltage based on error buffer occupancy
- Patent number 10,546,625
- Issue date Jan 28, 2020
- Spin Memory, Inc.
- Neal Berger
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Dual gate memory devices
- Patent number 10,497,415
- Issue date Dec 3, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming perpendicular magnetic tunnel junction memory ce...
- Patent number 10,468,293
- Issue date Nov 5, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular magnetic tunnel junction memory cells having shared s...
- Patent number 10,460,778
- Issue date Oct 29, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Annular vertical Si etched channel MOS devices
- Patent number 10,438,999
- Issue date Oct 8, 2019
- Spin Memory, Inc.
- Gian Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices including magnetic tunnel junctions integrated with selectors
- Patent number 10,438,995
- Issue date Oct 8, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of fabricating magnetic tunnel junctions integrated with se...
- Patent number 10,438,996
- Issue date Oct 8, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
THREE DIMENSIONAL PERPENDICULAR MAGNETIC TUNNEL JUNCTION WITH THIN...
- Publication number 20220344580
- Publication date Oct 27, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ERROR CACHE SYSTEM WITH COARSE AND FINE SEGMENTS FOR POWER OPTIMIZA...
- Publication number 20220107900
- Publication date Apr 7, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Neal BERGER
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
HEURISTICS FOR SELECTING SUBSEGMENTS FOR ENTRY IN AND ENTRY OUT OPE...
- Publication number 20220107888
- Publication date Apr 7, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Neal BERGER
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Patterned Silicide Structures and Methods of Manufacture
- Publication number 20220029092
- Publication date Jan 27, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM ARRAY HAVING REFERENCE CELL STRUCTURE AND CIRCUITRY THAT REINF...
- Publication number 20200302983
- Publication date Sep 24, 2020
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Patterned Silicide Structures and Methods of Manufacture
- Publication number 20200212296
- Publication date Jul 2, 2020
- SPIN MEMORY, INC.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A DATA RECORDING SYSTEM UTILIZING HETEROGE...
- Publication number 20200185601
- Publication date Jun 11, 2020
- Spin Transfer Technologies, Inc.
- Kadriye Deniz Bozdag
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY SYSTEM UTILIZING HETEROGENEOUS MAGNETIC TUNNEL JUNCTION TYPE...
- Publication number 20200143862
- Publication date May 7, 2020
- Spin Memory, Inc.
- Kadriye Deniz Bozdag
- G11 - INFORMATION STORAGE
Information Patent Application
ERROR CACHE SYSTEM WITH COARSE AND FINE SEGMENTS FOR POWER OPTIMIZA...
- Publication number 20200117610
- Publication date Apr 16, 2020
- Spin Memory, Inc.
- Neal BERGER
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
HEURISTICS FOR SELECTING SUBSEGMENTS FOR ENTRY IN AND ENTRY OUT OPE...
- Publication number 20200117592
- Publication date Apr 16, 2020
- Spin Memory, Inc.
- Neal BERGER
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETIC MEMORY ELEMENT WITH VOLTAGE CONTROLLED MAGNETIC ANISTROPY
- Publication number 20200105831
- Publication date Apr 2, 2020
- Spin Memory, Inc.
- Marcin Gajek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY MRAM INTEGRATION
- Publication number 20200013828
- Publication date Jan 9, 2020
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH DENSITY MRAM INTEGRATION
- Publication number 20200013827
- Publication date Jan 9, 2020
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Application
THREE DIMENSIONAL PERPENDICULAR MAGNETIC TUNNEL JUNCTION WITH THIN...
- Publication number 20190355896
- Publication date Nov 21, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Fabricating Dual Threshold Voltage Devices
- Publication number 20190311956
- Publication date Oct 10, 2019
- SPIN MEMORY, INC.
- Gian Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Adjustable Current Selectors
- Publication number 20190287596
- Publication date Sep 19, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES INCLUDING MAGNETIC TUNNEL JUNCTIONS INTEGRATED WITH SELECTORS
- Publication number 20190214429
- Publication date Jul 11, 2019
- Spin Transfer Technologies, Inc.
- Kuk-Hwan KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL CHANNEL/GATE VERTICAL FIELD-EFFECT TRANSISTOR (FET) FOR USE WI...
- Publication number 20190214432
- Publication date Jul 11, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Gate Memory Devices
- Publication number 20190214069
- Publication date Jul 11, 2019
- Spin Transfer Technologies
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY 3D MAGNETIC RANDOM ACCESS MEMORY (MRAM) CELL INTEGRATI...
- Publication number 20190214552
- Publication date Jul 11, 2019
- Spin Memory, Inc.
- Marcin Gajek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING MAGNETIC TUNNEL JUNCTIONS INTEGRATED WITH SE...
- Publication number 20190214430
- Publication date Jul 11, 2019
- Spin Transfer Technologies, Inc.
- Kuk-Hwan KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Threshold Voltage Devices
- Publication number 20190214431
- Publication date Jul 11, 2019
- Spin Transfer Technologies
- Gian Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF A PERPENDICULAR MAGNETIC TUNNEL JUNCTION (PMTJ) USIN...
- Publication number 20190214551
- Publication date Jul 11, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR MAGNETIC TUNNEL JUNCTION MEMORY CELLS HAVING SHARED S...
- Publication number 20190206463
- Publication date Jul 4, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF FORMING PERPENDICULAR MAGNETIC TUNNEL JUNCTION MEMORY CE...
- Publication number 20190206716
- Publication date Jul 4, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL PERPENDICULAR MAGNETIC JUNCTION WITH THIN-FILM TR...
- Publication number 20190206934
- Publication date Jul 4, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANNULAR VERTICAL SI ETCHED CHANNEL MOS DEVICES
- Publication number 20190206938
- Publication date Jul 4, 2019
- Spin Memory, Inc.
- Gian Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY-STRAINED SILICON DEVICE FOR USE WITH A PERPENDICULAR MAG...
- Publication number 20190206940
- Publication date Jul 4, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- G11 - INFORMATION STORAGE
Information Patent Application
CYLINDRICAL VERTICAL SI ETCHED CHANNEL 3D SWITCHING DEVICES
- Publication number 20190206461
- Publication date Jul 4, 2019
- Spin Memory, Inc.
- Gian Sharma
- G11 - INFORMATION STORAGE
Information Patent Application
PERPENDICULAR MAGNETIC TUNNEL JUNCTION MEMORY CELLS HAVING VERTICAL...
- Publication number 20190207024
- Publication date Jul 4, 2019
- Spin Memory, Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS

Kuk-Hwan Kim

Person

Patents Grantslast 30 patents

Three dimensional perpendicular magnetic tunnel junction with thin...

Patterned silicide structures and methods of manufacture

Error cache system with coarse and fine segments for power optimiza...

Heuristics for selecting subsegments for entry in and entry out ope...

Three dimensional perpendicular magnetic tunnel junction with thin...

High density 3D magnetic random access memory (MRAM) cell integrati...

Perpendicular magnetic tunnel junction memory cells having vertical...

Heuristics for selecting subsegments for entry in and entry out ope...

Error cache system with coarse and fine segments for power optimiza...

Patterned silicide structures and methods of manufacture

Method for manufacturing a data recording system utilizing heteroge...

High density MRAM integration

Vertically-strained silicon device for use with a perpendicular mag...

Adjustable current selectors

Memory system utilizing heterogeneous magnetic tunnel junction type...

MRAM array having reference cell structure and circuitry that reinf...

Flexible substrate for use with a perpendicular magnetic tunnel jun...

Methods of fabricating dual threshold voltage devices

Dual threshold voltage devices having a first transistor and a seco...

High density MRAM integration

Methods of forming perpendicular magnetic tunnel junction memory ce...

Method of making a three dimensional perpendicular magnetic tunnel...

Magnetic memory element with voltage controlled magnetic anistropy

Method of optimizing write voltage based on error buffer occupancy

Dual gate memory devices

Methods of forming perpendicular magnetic tunnel junction memory ce...

Perpendicular magnetic tunnel junction memory cells having shared s...

Annular vertical Si etched channel MOS devices

Devices including magnetic tunnel junctions integrated with selectors

Methods of fabricating magnetic tunnel junctions integrated with se...

Patents Applicationslast 30 patents

THREE DIMENSIONAL PERPENDICULAR MAGNETIC TUNNEL JUNCTION WITH THIN...

ERROR CACHE SYSTEM WITH COARSE AND FINE SEGMENTS FOR POWER OPTIMIZA...

HEURISTICS FOR SELECTING SUBSEGMENTS FOR ENTRY IN AND ENTRY OUT OPE...

Patterned Silicide Structures and Methods of Manufacture

MRAM ARRAY HAVING REFERENCE CELL STRUCTURE AND CIRCUITRY THAT REINF...

Patterned Silicide Structures and Methods of Manufacture

METHOD FOR MANUFACTURING A DATA RECORDING SYSTEM UTILIZING HETEROGE...

MEMORY SYSTEM UTILIZING HETEROGENEOUS MAGNETIC TUNNEL JUNCTION TYPE...

ERROR CACHE SYSTEM WITH COARSE AND FINE SEGMENTS FOR POWER OPTIMIZA...

HEURISTICS FOR SELECTING SUBSEGMENTS FOR ENTRY IN AND ENTRY OUT OPE...

MAGNETIC MEMORY ELEMENT WITH VOLTAGE CONTROLLED MAGNETIC ANISTROPY

HIGH DENSITY MRAM INTEGRATION

HIGH DENSITY MRAM INTEGRATION

THREE DIMENSIONAL PERPENDICULAR MAGNETIC TUNNEL JUNCTION WITH THIN...

Methods of Fabricating Dual Threshold Voltage Devices

Adjustable Current Selectors

DEVICES INCLUDING MAGNETIC TUNNEL JUNCTIONS INTEGRATED WITH SELECTORS

DUAL CHANNEL/GATE VERTICAL FIELD-EFFECT TRANSISTOR (FET) FOR USE WI...

Dual Gate Memory Devices

HIGH DENSITY 3D MAGNETIC RANDOM ACCESS MEMORY (MRAM) CELL INTEGRATI...

METHODS OF FABRICATING MAGNETIC TUNNEL JUNCTIONS INTEGRATED WITH SE...

Dual Threshold Voltage Devices

FABRICATION OF A PERPENDICULAR MAGNETIC TUNNEL JUNCTION (PMTJ) USIN...

PERPENDICULAR MAGNETIC TUNNEL JUNCTION MEMORY CELLS HAVING SHARED S...

METHODS OF FORMING PERPENDICULAR MAGNETIC TUNNEL JUNCTION MEMORY CE...

THREE DIMENSIONAL PERPENDICULAR MAGNETIC JUNCTION WITH THIN-FILM TR...

ANNULAR VERTICAL SI ETCHED CHANNEL MOS DEVICES

VERTICALLY-STRAINED SILICON DEVICE FOR USE WITH A PERPENDICULAR MAG...

CYLINDRICAL VERTICAL SI ETCHED CHANNEL 3D SWITCHING DEVICES

PERPENDICULAR MAGNETIC TUNNEL JUNCTION MEMORY CELLS HAVING VERTICAL...