Kuo-Chien Wu

Person

Miaoli, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Word line structure with single-sided partially recessed gate struc...
- Patent number 7,358,576
- Issue date Apr 15, 2008
- Nanya Technology Corporation
- Shih-Fan Kuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming self-aligned contact in semiconductor device
- Patent number 7,115,491
- Issue date Oct 3, 2006
- Nanya Technology Corporation
- Tse-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bitline structure for DRAM and method of forming the same
- Patent number 7,075,138
- Issue date Jul 11, 2006
- Nanya Technology Corporation
- Kuo-Chien Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming bit line
- Patent number 7,052,949
- Issue date May 30, 2006
- Nanya Technology Corporation
- Kuo-Chien Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench structure manufacturing process
- Patent number 7,033,885
- Issue date Apr 25, 2006
- Nanya Technology Corporation
- Ping Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for avoiding short-circuit of conductive wires
- Patent number 7,030,011
- Issue date Apr 18, 2006
- Nanya Technology Corporation
- Kuo-Chien Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
World line structure with single-sided partially recessed gate stru...
- Patent number 6,991,978
- Issue date Jan 31, 2006
- Nanya Technology Corporation
- Shih-Fan Kuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a trench capacitor of DRAM
- Patent number 6,979,613
- Issue date Dec 27, 2005
- Nanya Technology Corp.
- Kuo-Chien Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device
- Patent number 6,972,248
- Issue date Dec 6, 2005
- Nanya Technology Corporation
- Sweehan J. H. Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing the aspect ratio of a trench
- Patent number 6,960,530
- Issue date Nov 1, 2005
- Nanya Technology Corporation
- Chang-Rong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a trench capacitor
- Patent number 6,960,503
- Issue date Nov 1, 2005
- Nanya Technology Corp.
- Ping Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating memory device having a deep trench capacitor
- Patent number 6,953,725
- Issue date Oct 11, 2005
- Nanya Technology Corp.
- Ping Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing gate structure with sides of its metal lay...
- Patent number 6,943,099
- Issue date Sep 13, 2005
- Nanya Technology Corporation
- Shih-Fan Kuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device featuring formation of...
- Patent number 6,933,229
- Issue date Aug 23, 2005
- Nanya Technology Corporation
- Shih-Fan Kuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming DRAM cell bit line and bit line contact structure
- Patent number 6,930,043
- Issue date Aug 16, 2005
- Nanya Technology Corp.
- Kuo-Chien Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming bit lines and bit line contacts in a memory device
- Patent number 6,797,564
- Issue date Sep 28, 2004
- Nanya Technology Corp.
- Kuo-Chien Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating contact holes on a semiconductor chip
- Patent number 6,797,611
- Issue date Sep 28, 2004
- Nanya Technology Corp.
- Kuo-Chien Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bitline structure for DRAM and method of forming the same
- Patent number 6,790,771
- Issue date Sep 14, 2004
- Nanya Technology Corporation
- Kuo-Chien Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming silicide at source and drain
- Patent number 6,743,717
- Issue date Jun 1, 2004
- Nanya Technology Corporation
- Kuo-Chien Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Word line structure with single-sided partially recessed gate struc...
- Publication number 20060030091
- Publication date Feb 9, 2006
- NANYA TECHNOLOGY CORPORATION
- Shih-Fan Kuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming self-aligned contact in semiconductor device
- Publication number 20050277258
- Publication date Dec 15, 2005
- Tse-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A TRENCH CAPACITOR OF DRAM
- Publication number 20050277247
- Publication date Dec 15, 2005
- Kuo-Chien Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF
- Publication number 20050275109
- Publication date Dec 15, 2005
- SHIH-FAN KUAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming contact window
- Publication number 20050260847
- Publication date Nov 24, 2005
- J. H. Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating semiconductor device
- Publication number 20050202666
- Publication date Sep 15, 2005
- Sweehan J.H. Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing gate structure of memory
- Publication number 20050176244
- Publication date Aug 11, 2005
- NANYA TECHNOLOGY CORPORATION
- Shih-Fan Kuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING GATE STRUCTURE WITH SIDES OF ITS METAL LAY...
- Publication number 20050170624
- Publication date Aug 4, 2005
- NANYA TECHNOLOGY CORPORATION
- Shih-Fan Kuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
World line structure with single-sided partially recessed gate stru...
- Publication number 20050167763
- Publication date Aug 4, 2005
- NANYA TECHNOLOGY CORPORATION
- Shih-Fan Kuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing gate structure for use in semiconductor de...
- Publication number 20050124127
- Publication date Jun 9, 2005
- Tzu-En Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A TRENCH CAPACITOR
- Publication number 20050106831
- Publication date May 19, 2005
- Ping Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deep trench structure manufacturing process
- Publication number 20050070065
- Publication date Mar 31, 2005
- NANYA TECHNOLOGY CORPORATION
- Ping Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for avoiding short-circuit of conductive wires
- Publication number 20050032343
- Publication date Feb 10, 2005
- Kuo-Chien Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for avoiding erosion of DRAM fuse sidewall
- Publication number 20050032389
- Publication date Feb 10, 2005
- NANYA TECHNOLOGY CORPORATION
- Kuo-Chien Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming DRAM cell bit line and bit line contact structure
- Publication number 20050026409
- Publication date Feb 3, 2005
- NANYA Technology Corp.
- Kuo-Chien Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming aluminum-containing interconnect
- Publication number 20050020059
- Publication date Jan 27, 2005
- Yi-Nan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
[SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF]
- Publication number 20050012218
- Publication date Jan 20, 2005
- SHIH-FAN KUAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming DRAM cell bit-line contact
- Publication number 20050003307
- Publication date Jan 6, 2005
- Shih-Fan Kuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
[METHOD FOR FABRICATING MEMORY DEVICE HAVING A DEEP TRENCH CAPACITOR]
- Publication number 20040253785
- Publication date Dec 16, 2004
- PING HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of reducing the aspect ratio of a trench
- Publication number 20040203247
- Publication date Oct 14, 2004
- NANYA TECHNOLOGY CORPORATION
- Chang-Rong WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bitline structure for DRAM and method of forming the same
- Publication number 20040140496
- Publication date Jul 22, 2004
- Kuo-Chien Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming bit line
- Publication number 20040127013
- Publication date Jul 1, 2004
- NANYA TECHNOLOGY CORPORATION
- Kuo-Chien Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bitline structure for DRAM and method of forming the same
- Publication number 20040106280
- Publication date Jun 3, 2004
- NANYA TECHNOLOGY CORPORATION
- Kuo-Chien Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SILICIDE AT SOURCE AND DRAIN
- Publication number 20040106282
- Publication date Jun 3, 2004
- NANYA TECHNOLOGY CORPORATION
- Kuo-Chien Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming bit line contact
- Publication number 20040058519
- Publication date Mar 25, 2004
- NANYA TECHNOLOGY CORP
- Kuo-Chien Wu
- H01 - BASIC ELECTRIC ELEMENTS

Kuo-Chien Wu

Person

Patents Grantslast 30 patents

Word line structure with single-sided partially recessed gate struc...

Method for forming self-aligned contact in semiconductor device

Bitline structure for DRAM and method of forming the same

Method for forming bit line

Deep trench structure manufacturing process

Method for avoiding short-circuit of conductive wires

World line structure with single-sided partially recessed gate stru...

Method for fabricating a trench capacitor of DRAM

Method of fabricating semiconductor device

Method of reducing the aspect ratio of a trench

Method for fabricating a trench capacitor

Method for fabricating memory device having a deep trench capacitor

Method for manufacturing gate structure with sides of its metal lay...

Method of manufacturing semiconductor device featuring formation of...

Method for forming DRAM cell bit line and bit line contact structure

Method of forming bit lines and bit line contacts in a memory device

Method of fabricating contact holes on a semiconductor chip

Bitline structure for DRAM and method of forming the same

Method for forming silicide at source and drain

Patents Applicationslast 30 patents

Word line structure with single-sided partially recessed gate struc...

Method for forming self-aligned contact in semiconductor device

METHOD FOR FABRICATING A TRENCH CAPACITOR OF DRAM

SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

Method for forming contact window

Method of fabricating semiconductor device

Method for manufacturing gate structure of memory

METHOD FOR MANUFACTURING GATE STRUCTURE WITH SIDES OF ITS METAL LAY...

World line structure with single-sided partially recessed gate stru...

Method for manufacturing gate structure for use in semiconductor de...

METHOD FOR FABRICATING A TRENCH CAPACITOR

Deep trench structure manufacturing process

Method for avoiding short-circuit of conductive wires

Method for avoiding erosion of DRAM fuse sidewall

Method for forming DRAM cell bit line and bit line contact structure

Method for forming aluminum-containing interconnect

[SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF]

Method for forming DRAM cell bit-line contact

[METHOD FOR FABRICATING MEMORY DEVICE HAVING A DEEP TRENCH CAPACITOR]

Method of reducing the aspect ratio of a trench

Bitline structure for DRAM and method of forming the same

Method for forming bit line

Bitline structure for DRAM and method of forming the same

METHOD FOR FORMING SILICIDE AT SOURCE AND DRAIN

Method for forming bit line contact