Lewis Shen

Person

Cupertino, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for forming SAC using a dielectric as a BARC and FICD enlarger
- Patent number 6,878,622
- Issue date Apr 12, 2005
- Advanced Micro Devices, Inc.
- Wenge Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a memory cell with polished insulator layer
- Patent number 6,867,097
- Issue date Mar 15, 2005
- Advanced Micro Devices, Inc.
- Mark T. Ramsbey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon barrier layer to prevent resist poisoning
- Patent number 6,586,339
- Issue date Jul 1, 2003
- Advanced Micro Devices, Inc.
- Marina V. Plat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of high density plasma metal etching
- Patent number 6,534,411
- Issue date Mar 18, 2003
- Advanced Micro Devices, Inc.
- Lewis Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with reduced control gate dimensions
- Patent number 6,515,328
- Issue date Feb 4, 2003
- Advanced Micro Devices, Inc.
- Wenge Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure of etching a memory cell polysilicon gate laye...
- Patent number 6,452,225
- Issue date Sep 17, 2002
- Wenge Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for etching memory gate stack using thin resist layer
- Patent number 6,383,939
- Issue date May 7, 2002
- Advanced Micro Devices, Inc.
- Wenge Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for trimming a photoresist pattern line for memory gate etching
- Patent number 6,372,651
- Issue date Apr 16, 2002
- Advanced Micro Devices, Inc.
- Wenge Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor manufacturing method using a dielectric photomask
- Patent number 6,365,509
- Issue date Apr 2, 2002
- Advanced Micro Devices, Inc.
- Ramkumar Subramanian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermally grown protective oxide buffer layer for ARC removal
- Patent number 6,355,546
- Issue date Mar 12, 2002
- Advanced Micro Devices, Inc.
- Richard J. Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bilayer anti-reflective coating and etch hard mask
- Patent number 6,352,930
- Issue date Mar 5, 2002
- Advanced Micro Devices, Inc.
- Kathleen R. Early
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protective oxide buffer layer for ARC removal
- Patent number 6,291,329
- Issue date Sep 18, 2001
- Advanced Micro Devices, Inc.
- Richard J. Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for treating a deep-UV resist mask prior to gate formation...
- Patent number 6,271,154
- Issue date Aug 7, 2001
- Advanced Micro Devices, Inc.
- Lewis Shen
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Bilayer anti-reflective coating and etch hard mask
- Patent number 6,232,002
- Issue date May 15, 2001
- Advanced Micro Devices, Inc.
- Kathleen R. Early
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RTA methods for treating a deep-UV resist mask prior to gate format...
- Patent number 6,218,310
- Issue date Apr 17, 2001
- Advanced Micro Devices, Inc.
- Lewis Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature photoresist removal for rework during metal mask fo...
- Patent number 6,174,819
- Issue date Jan 16, 2001
- Advanced Micro Devices, Inc.
- Jeffrey Allan Shields
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for removing silicide residue in a semiconductor device
- Patent number 6,159,794
- Issue date Dec 12, 2000
- Advanced Micro Devices, Inc.
- Wenge Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for etching layers on a semiconductor wafer in a single etch...
- Patent number 6,159,860
- Issue date Dec 12, 2000
- Advanced Micro Devices, Inc.
- Wenge Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure of etching a memory cell polysilicon gate laye...
- Patent number 6,110,779
- Issue date Aug 29, 2000
- Advanced Micro Devices, Inc.
- Wenge Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preventing silicide residue formation in a semiconductor...
- Patent number 6,074,956
- Issue date Jun 13, 2000
- Advanced Micro Devices, Inc.
- Wenge Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of etching conductive lines through an etch resistant photor...
- Patent number 6,025,268
- Issue date Feb 15, 2000
- Advanced Micro Devices, Inc.
- Lewis N. Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide stack for flash memory application
- Patent number 6,011,289
- Issue date Jan 4, 2000
- Advanced Micro Devices, Inc.
- Richard J. Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for etching memory gate stack using thin resist layer
- Patent number 5,977,601
- Issue date Nov 2, 1999
- Advanced Micro Devices, Inc.
- Wenge Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and arrangements for forming a tapered floating gate in non...
- Patent number 5,973,353
- Issue date Oct 26, 1999
- Advanced Micro Devices, Inc.
- Wenge Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of soft-landing gate etching to prevent gate oxide damage
- Patent number 5,948,703
- Issue date Sep 7, 1999
- Advanced Micro Devices, Inc.
- Lewis Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of high density plasma metal etching
- Patent number 5,795,829
- Issue date Aug 18, 1998
- Advanced Micro Devices, Inc.
- Lewis Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing without undercutti...
- Patent number 5,770,518
- Issue date Jun 23, 1998
- Advanced Micro Devices, Inc.
- Lewis Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of etching conductive lines without undercutting
- Patent number 5,702,564
- Issue date Dec 30, 1997
- Advanced Micro Devices, Inc.
- Lewis Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Construction that prevents the undercut of interconnect lines in pl...
- Patent number 5,688,717
- Issue date Nov 18, 1997
- Advanced Micro Devices, Inc.
- Lewis Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Construction that prevents the undercut of interconnect lines in pl...
- Patent number 5,675,186
- Issue date Oct 7, 1997
- Advanced Micro Devices, Inc.
- Lewis Shen
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method for forming SAC using a dielectric as a BARC and FICD enlarger

Method of making a memory cell with polished insulator layer

Silicon barrier layer to prevent resist poisoning

Method of high density plasma metal etching

Semiconductor devices with reduced control gate dimensions

Method and structure of etching a memory cell polysilicon gate laye...

Method for etching memory gate stack using thin resist layer

Method for trimming a photoresist pattern line for memory gate etching

Semiconductor manufacturing method using a dielectric photomask

Thermally grown protective oxide buffer layer for ARC removal

Bilayer anti-reflective coating and etch hard mask

Protective oxide buffer layer for ARC removal

Methods for treating a deep-UV resist mask prior to gate formation...

Bilayer anti-reflective coating and etch hard mask

RTA methods for treating a deep-UV resist mask prior to gate format...

Low temperature photoresist removal for rework during metal mask fo...

Methods for removing silicide residue in a semiconductor device

Method for etching layers on a semiconductor wafer in a single etch...

Method and structure of etching a memory cell polysilicon gate laye...

Method for preventing silicide residue formation in a semiconductor...

Method of etching conductive lines through an etch resistant photor...

Metal oxide stack for flash memory application

Method for etching memory gate stack using thin resist layer

Methods and arrangements for forming a tapered floating gate in non...

Method of soft-landing gate etching to prevent gate oxide damage

Method of high density plasma metal etching

Semiconductor device and method of manufacturing without undercutti...

Method of etching conductive lines without undercutting

Construction that prevents the undercut of interconnect lines in pl...

Construction that prevents the undercut of interconnect lines in pl...