Manijeh Razeghi

Person

Wilmette, IL, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods of fabricating planar infrared photodetectors
- Patent number 12,080,823
- Issue date Sep 3, 2024
- Northwestern University
- Manijeh Razeghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory device using doped semiconductor layer
- Patent number 11,930,719
- Issue date Mar 12, 2024
- Northwestern University
- Pedram Khalili Amiri
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of fabricating planar infrared photodetectors
- Patent number 11,641,003
- Issue date May 2, 2023
- Northwestern University
- Manijeh Razeghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ p-type activation of III-nitride films grown via metal orga...
- Patent number 11,600,496
- Issue date Mar 7, 2023
- Northwestern University
- Manijeh Razeghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amphoteric p-type and n-type doping of group III-VI semiconductors...
- Patent number 11,417,523
- Issue date Aug 16, 2022
- Northwestern University
- Manijeh Razeghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithical widely tunable quantum cascade laser devices
- Patent number 9,917,418
- Issue date Mar 13, 2018
- Northwestern University
- Manijeh Razeghi
- G02 - OPTICS
Information Patent Grant
Polarity inversion of type-II InAs/GaSb superlattice photodiodes
- Patent number 7,692,183
- Issue date Apr 6, 2010
- MP Technologies, LLC
- Manijeh Razeghi
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Superlattice photodiodes with polyimide surface passivation
- Patent number 7,682,865
- Issue date Mar 23, 2010
- MP Technologies, LLC
- Manijeh Razeghi
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
InAs/GaSb infrared superlattice photodiodes doped with Beryllium
- Patent number 7,638,791
- Issue date Dec 29, 2009
- MP Technologies, LLC
- Manijeh Razeghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Focal plane arrays in type II-superlattices
- Patent number 7,001,794
- Issue date Feb 21, 2006
- MP Technologies, LLC
- Manijeh Razeghi
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Focal plane arrays in type II-superlattices
- Patent number 6,864,552
- Issue date Mar 8, 2005
- MP Technologies, LLC
- Manijeh Razeghi
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Multi color detector
- Patent number 6,750,075
- Issue date Jun 15, 2004
- Manijeh Razeghi
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Aluminum-free vertical cavity surface emitting laser (VCSELs)
- Patent number 6,610,553
- Issue date Aug 26, 2003
- Manijeh Razeghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride optoelectronic device
- Patent number 6,605,485
- Issue date Aug 12, 2003
- MP Technologies, LLC
- Manijeh Razeghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser diode
- Patent number 6,577,659
- Issue date Jun 10, 2003
- MP Technologies, LLC
- Manijeh Razeghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V semiconductors separate confinement superlattice optoelectron...
- Patent number 6,570,179
- Issue date May 27, 2003
- MP Technologies, LLC
- Manijeh Razeghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum-free vertical cavity surface emitting lasers (VCSELs)
- Patent number 6,480,520
- Issue date Nov 12, 2002
- MP Technologies L.L.C.
- Manijeh Razeghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode laser
- Patent number 6,461,884
- Issue date Oct 8, 2002
- Manijeh Razeghi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multi quantum well grinsch detector
- Patent number 6,459,096
- Issue date Oct 1, 2002
- Manijeh Razeghi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multi color detector
- Patent number 6,452,242
- Issue date Sep 17, 2002
- MP Technologies L.L.C.
- Manijeh Razeghi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multi-spectral quantum well infrared photodetectors
- Patent number 6,420,728
- Issue date Jul 16, 2002
- Manijeh Razeghi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Fabrication of defect free III-nitride materials
- Patent number 6,271,104
- Issue date Aug 7, 2001
- MP Technologies
- Manijeh Razeghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Long wavelength DH, SCH and MQW lasers based on Sb
- Patent number 6,108,360
- Issue date Aug 22, 2000
- Manijeh Razeghi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Long wavelength infrared photodetectors
- Patent number 6,054,706
- Issue date Apr 25, 2000
- Northwestern University
- Manijeh Razeghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making III-Nitride laser and detection device
- Patent number 5,834,331
- Issue date Nov 10, 1998
- Northwestern University
- Manijeh Razeghi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
III-nitride superlattice structures
- Patent number 5,831,277
- Issue date Nov 3, 1998
- Northwestern University
- Manijeh Razeghi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Processing of Sb-based lasers
- Patent number 5,807,765
- Issue date Sep 15, 1998
- Northwestern University
- Manijeh Razeghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried-ridge laser device
- Patent number 5,726,078
- Issue date Mar 10, 1998
- Northwestern University
- Manijeh Razeghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composition for InSB and GaAs thin film on silicon substrate for us...
- Patent number 5,668,395
- Issue date Sep 16, 1997
- Northwestern University
- Manijeh Razeghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried-ridge laser device
- Patent number 5,663,976
- Issue date Sep 2, 1997
- Northwestern University
- Manijeh Razeghi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS FOR FORMING K-PHASE GALLIUM OXIDE MATERIALS
- Publication number 20240096618
- Publication date Mar 21, 2024
- Northwestern University
- Manijeh Razeghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING PLANAR INFRARED PHOTODETECTORS
- Publication number 20230253522
- Publication date Aug 10, 2023
- Northwestern University
- Manijeh Razeghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE/GALLIUM OXIDE BASED HIGH ELECTRON MOBILITY TRANSISTORS
- Publication number 20230089714
- Publication date Mar 23, 2023
- Northwestern University
- Manijeh Razeghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE USING DOPED SEMICONDUCTOR LAYER
- Publication number 20220109103
- Publication date Apr 7, 2022
- Northwestern University
- Pedram Khalili Amiri
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF FABRICATING PLANAR INFRARED PHOTODETECTORS
- Publication number 20210167244
- Publication date Jun 3, 2021
- Northwestern University
- Manijeh Razeghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU P-TYPE ACTIVATION OF III-NITRIDE FILMS GROWN VIA METAL ORGA...
- Publication number 20210151329
- Publication date May 20, 2021
- Northwestern University
- Manijeh Razeghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AMPHOTERIC P-TYPE AND N-TYPE DOPING OF GROUP III-VI SEMICONDUCTORS...
- Publication number 20200312660
- Publication date Oct 1, 2020
- Northwestern University
- Manijeh Razeghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHICAL WIDELY TUNABLE QUANTUM CASCADE LASER DEVICES
- Publication number 20170194765
- Publication date Jul 6, 2017
- Northwestern University
- Manijeh Razeghi
- G01 - MEASURING TESTING
Information Patent Application
Superlattice Photodiodes With Polyimide Surface Passivation
- Publication number 20090302309
- Publication date Dec 10, 2009
- MP Technologies, LLC
- Manijeh Razeghi
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
InAs/GaSb Infrared Superlattice Photodiodes Doped with Beryllium
- Publication number 20090224228
- Publication date Sep 10, 2009
- Manijeh Razeghi
- B82 - NANO-TECHNOLOGY
Information Patent Application
POLARITY INVERSION OF TYPE-II InAs/GaSb SUPERLATTICE PHOTODIODES
- Publication number 20090224229
- Publication date Sep 10, 2009
- Manijeh Razeghi
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
TYPE-II InAs/GaSb SUPERLATTICE PHOTODIODE AND METHOD OF OPTIMIZING...
- Publication number 20090224227
- Publication date Sep 10, 2009
- Manijeh Razeghi
- B82 - NANO-TECHNOLOGY
Information Patent Application
Focal plane arrays in type II-superlattices
- Publication number 20050116260
- Publication date Jun 2, 2005
- Manijeh Razeghi
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Focal plane arrays in type II-superlattices
- Publication number 20040142504
- Publication date Jul 22, 2004
- MP Technologies, LLC
- Manijeh Razeghi
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
III-V semiconductors separate confinement superlattice optoelectron...
- Publication number 20030005880
- Publication date Jan 9, 2003
- Manijeh Razeghi
- B82 - NANO-TECHNOLOGY
Information Patent Application
Multi color detector
- Publication number 20020195677
- Publication date Dec 26, 2002
- Manijeh Razeghi
- B82 - NANO-TECHNOLOGY
Information Patent Application
III-Nitride optoelectronic device
- Publication number 20020175324
- Publication date Nov 28, 2002
- Manijeh Razeghi
- B82 - NANO-TECHNOLOGY
Information Patent Application
Aluminum-free vertical cavity surface emitting laser (VCSELs)
- Publication number 20020172254
- Publication date Nov 21, 2002
- Manijeh Razeghi
- B82 - NANO-TECHNOLOGY
Information Patent Application
DIODE LASER
- Publication number 20020127755
- Publication date Sep 12, 2002
- Manijeh Razeghi
- B82 - NANO-TECHNOLOGY

Manijeh Razeghi

Person

Patents Grantslast 30 patents

Methods of fabricating planar infrared photodetectors

Magnetic memory device using doped semiconductor layer

Methods of fabricating planar infrared photodetectors

In-situ p-type activation of III-nitride films grown via metal orga...

Amphoteric p-type and n-type doping of group III-VI semiconductors...

Monolithical widely tunable quantum cascade laser devices

Polarity inversion of type-II InAs/GaSb superlattice photodiodes

Superlattice photodiodes with polyimide surface passivation

InAs/GaSb infrared superlattice photodiodes doped with Beryllium

Focal plane arrays in type II-superlattices

Focal plane arrays in type II-superlattices

Multi color detector

Aluminum-free vertical cavity surface emitting laser (VCSELs)

III-nitride optoelectronic device

Semiconductor laser diode

III-V semiconductors separate confinement superlattice optoelectron...

Aluminum-free vertical cavity surface emitting lasers (VCSELs)

Diode laser

Multi quantum well grinsch detector

Multi color detector

Multi-spectral quantum well infrared photodetectors

Fabrication of defect free III-nitride materials

Long wavelength DH, SCH and MQW lasers based on Sb

Long wavelength infrared photodetectors

Method for making III-Nitride laser and detection device

III-nitride superlattice structures

Processing of Sb-based lasers

Buried-ridge laser device

Composition for InSB and GaAs thin film on silicon substrate for us...

Buried-ridge laser device

Patents Applicationslast 30 patents

METHODS FOR FORMING K-PHASE GALLIUM OXIDE MATERIALS

METHODS OF FABRICATING PLANAR INFRARED PHOTODETECTORS

III-NITRIDE/GALLIUM OXIDE BASED HIGH ELECTRON MOBILITY TRANSISTORS

MAGNETIC MEMORY DEVICE USING DOPED SEMICONDUCTOR LAYER

METHODS OF FABRICATING PLANAR INFRARED PHOTODETECTORS

IN-SITU P-TYPE ACTIVATION OF III-NITRIDE FILMS GROWN VIA METAL ORGA...

AMPHOTERIC P-TYPE AND N-TYPE DOPING OF GROUP III-VI SEMICONDUCTORS...

MONOLITHICAL WIDELY TUNABLE QUANTUM CASCADE LASER DEVICES

Superlattice Photodiodes With Polyimide Surface Passivation

InAs/GaSb Infrared Superlattice Photodiodes Doped with Beryllium

POLARITY INVERSION OF TYPE-II InAs/GaSb SUPERLATTICE PHOTODIODES

TYPE-II InAs/GaSb SUPERLATTICE PHOTODIODE AND METHOD OF OPTIMIZING...

Focal plane arrays in type II-superlattices

Focal plane arrays in type II-superlattices

III-V semiconductors separate confinement superlattice optoelectron...

Multi color detector

III-Nitride optoelectronic device

Aluminum-free vertical cavity surface emitting laser (VCSELs)

DIODE LASER