Mark C. Gilmer

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of making enhanced trench oxide with low temperature nitroge...
- Patent number 6,727,569
- Issue date Apr 27, 2004
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrogenated gate structure for improved transistor performance and...
- Patent number 6,373,113
- Issue date Apr 16, 2002
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal silicide transistor gate spaced from a semiconductor substrat...
- Patent number 6,265,749
- Issue date Jul 24, 2001
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chemical vapor deposition systems and methods for depositing films...
- Patent number 6,214,123
- Issue date Apr 10, 2001
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming a semiconductor device having integrated electrod...
- Patent number 6,214,690
- Issue date Apr 10, 2001
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making elevated source/drain using poly underlayer
- Patent number 6,211,025
- Issue date Apr 3, 2001
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having reduced polysilicon gate electrode widt...
- Patent number 6,204,130
- Issue date Mar 20, 2001
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming ultra-thin oxides with low temperature oxidation
- Patent number 6,197,647
- Issue date Mar 6, 2001
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric-enhanced tantalum pentoxide for dielectric material a...
- Patent number 6,197,668
- Issue date Mar 6, 2001
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density mosfet fabrication method with integrated device scaling
- Patent number 6,197,644
- Issue date Mar 6, 2001
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making high performance MOSFET with polished gate and sou...
- Patent number 6,174,794
- Issue date Jan 16, 2001
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Advanced isolation structure for high density semiconductor devices
- Patent number 6,175,144
- Issue date Jan 16, 2001
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain and lightly doped drain formation at post interlevel d...
- Patent number 6,172,407
- Issue date Jan 9, 2001
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having transistors that include insulative punch...
- Patent number 6,172,402
- Issue date Jan 9, 2001
- Advanced Micro Devices
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices comprised of one or more epitaxial layers
- Patent number 6,169,306
- Issue date Jan 2, 2001
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for performing jet vapor reduction of the thickness of pr...
- Patent number 6,165,314
- Issue date Dec 26, 2000
- Advanced Micron Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a composite gate dielectric layer and gat...
- Patent number 6,163,060
- Issue date Dec 19, 2000
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra short transistor channel length formed using a gate dielectri...
- Patent number 6,153,477
- Issue date Nov 28, 2000
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for heating semiconductor wafers
- Patent number 6,152,075
- Issue date Nov 28, 2000
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and apparatus for in-situ cleaning of polysilicon-coated qua...
- Patent number 6,148,832
- Issue date Nov 21, 2000
- Advanced Micro Devices, Inc.
- Mark C. Gilmer
- B08 - CLEANING
Information Patent Grant
Jet vapor reduction of the thickness of process layers
- Patent number 6,147,004
- Issue date Nov 14, 2000
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making high performance MOSFET with integrated simultaneo...
- Patent number 6,140,191
- Issue date Oct 31, 2000
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance MOSFET and method of forming the same using silici...
- Patent number 6,140,167
- Issue date Oct 31, 2000
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having gate oxide formed by selective oxide re...
- Patent number 6,130,164
- Issue date Oct 10, 2000
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having nitrogen-bear...
- Patent number 6,127,284
- Issue date Oct 3, 2000
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor device having source/drain structu...
- Patent number 6,124,172
- Issue date Sep 26, 2000
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporating barrier atoms into a gate dielectric using gas cluste...
- Patent number 6,124,620
- Issue date Sep 26, 2000
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor device with a multi-level gate str...
- Patent number 6,121,094
- Issue date Sep 19, 2000
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor device with a composite gate diele...
- Patent number 6,114,228
- Issue date Sep 5, 2000
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor fabrication employing self-aligned sidewall spacers l...
- Patent number 6,111,292
- Issue date Aug 29, 2000
- Advanced Micro Devices, Inc.
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS

Mark C. Gilmer

Person

Patents Grantslast 30 patents

Method of making enhanced trench oxide with low temperature nitroge...

Nitrogenated gate structure for improved transistor performance and...

Metal silicide transistor gate spaced from a semiconductor substrat...

Chemical vapor deposition systems and methods for depositing films...

Method of forming a semiconductor device having integrated electrod...

Method of making elevated source/drain using poly underlayer

Semiconductor device having reduced polysilicon gate electrode widt...

Method of forming ultra-thin oxides with low temperature oxidation

Ferroelectric-enhanced tantalum pentoxide for dielectric material a...

High density mosfet fabrication method with integrated device scaling

Method of making high performance MOSFET with polished gate and sou...

Advanced isolation structure for high density semiconductor devices

Source/drain and lightly doped drain formation at post interlevel d...

Integrated circuit having transistors that include insulative punch...

Semiconductor devices comprised of one or more epitaxial layers

Apparatus for performing jet vapor reduction of the thickness of pr...

Semiconductor device with a composite gate dielectric layer and gat...

Ultra short transistor channel length formed using a gate dielectri...

Method and system for heating semiconductor wafers

Method and apparatus for in-situ cleaning of polysilicon-coated qua...

Jet vapor reduction of the thickness of process layers

Method of making high performance MOSFET with integrated simultaneo...

High performance MOSFET and method of forming the same using silici...

Semiconductor device having gate oxide formed by selective oxide re...

Method of manufacturing a semiconductor device having nitrogen-bear...

Method of making a semiconductor device having source/drain structu...

Incorporating barrier atoms into a gate dielectric using gas cluste...

Method of making a semiconductor device with a multi-level gate str...

Method of making a semiconductor device with a composite gate diele...

Semiconductor fabrication employing self-aligned sidewall spacers l...