Masami Yamaoka

Person

Anjo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of manufacturing same
- Patent number 7,064,033
- Issue date Jun 20, 2006
- Denso Corporation
- Yoshifumi Okabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a vertical semiconductor device
- Patent number 6,949,434
- Issue date Sep 27, 2005
- Denso Corporation
- Yoshifumi Okabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 6,903,417
- Issue date Jun 7, 2005
- Denso Corporation
- Yoshifumi Okabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing same
- Patent number 6,649,478
- Issue date Nov 18, 2003
- Denso Corporation
- Yoshifumi Okabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device that exhibits decreased contact resistance bet...
- Patent number 6,498,366
- Issue date Dec 24, 2002
- Denso Corporation
- Yoshifumi Okabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a vertical semiconductor device
- Patent number 5,994,187
- Issue date Nov 30, 1999
- Nippondenso Co., Ltd.
- Yoshifumi Okabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sputter-deposited nickel layer
- Patent number 5,876,861
- Issue date Mar 2, 1999
- Nippondenso Company, Ltd.
- Ichiharu Kondo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Vertical type semiconductor device and gate structure
- Patent number 5,798,550
- Issue date Aug 25, 1998
- Nippondenso Co. Ltd.
- Akira Kuroyanagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical semiconductor device with ground surface providing a reduc...
- Patent number 5,689,130
- Issue date Nov 18, 1997
- Nippondenso Co., Ltd.
- Yoshifumi Okabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a vertical semiconductor device with ground...
- Patent number 5,663,096
- Issue date Sep 2, 1997
- Nippondenso Co., Ltd.
- Yoshifumi Okabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including overvoltage protection diode
- Patent number 5,596,217
- Issue date Jan 21, 1997
- Nippondenso Co., Ltd.
- Masami Yamaoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming electrodes of semiconductor device
- Patent number 5,360,765
- Issue date Nov 1, 1994
- Nippondenso Co., Ltd.
- Ichiharu Kondo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High withstanding voltage transistor
- Patent number 5,264,720
- Issue date Nov 23, 1993
- Nippondenso Co., Ltd.
- Hiroshi Muto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical type semiconductor device and method for producing the same
- Patent number 5,250,449
- Issue date Oct 5, 1993
- Nippondenso Co., Ltd.
- Akira Kuroyanagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a polycrystalline diode having high breakdown
- Patent number 5,248,623
- Issue date Sep 28, 1993
- Nippondenso Co., Ltd.
- Hiroshi Muto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing same
- Patent number 5,242,862
- Issue date Sep 7, 1993
- Nippondenso Co., Ltd.
- Yoshifumi Okabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polycrystalline diode and a method for making the same
- Patent number 5,168,337
- Issue date Dec 1, 1992
- Nippondenso Co., Ltd.
- Hiroshi Muto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and manufacturing method for thin-film semiconductor diod...
- Patent number 5,136,348
- Issue date Aug 4, 1992
- Nippondenso Co., Ltd.
- Yukio Tsuzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor apparatus
- Patent number 5,128,823
- Issue date Jul 7, 1992
- Nippondenso Co., Ltd.
- Hiroshi Fujimoto
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device with gradually varying doping levels to compen...
- Patent number 5,072,277
- Issue date Dec 10, 1991
- Nippondenso Co., Ltd.
- Toshio Sakakibara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device constituting bipolar transistor
- Patent number 4,994,880
- Issue date Feb 19, 1991
- Nippondenso Co., Ltd.
- Naohito Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with protective means against overheating
- Patent number 4,896,199
- Issue date Jan 23, 1990
- Nippondenso Co., Ltd.
- Yukio Tsuzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a DMOS
- Patent number 4,879,254
- Issue date Nov 7, 1989
- Nippondenso Co., Ltd.
- Yukio Tsuzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with protective means against overheating
- Patent number 4,760,434
- Issue date Jul 26, 1988
- Nippondenso Co., Ltd.
- Yukio Tsuzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 4,680,608
- Issue date Jul 14, 1987
- Nippondenso Co., Ltd.
- Yukio Tsuzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor circuit device including an overvoltage protection el...
- Patent number 4,672,402
- Issue date Jun 9, 1987
- Nippondenso Co., Ltd.
- Masami Yamaoka
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device and method of manufacturing same
- Publication number 20050227438
- Publication date Oct 13, 2005
- DENSO CORPORATION
- Yoshifumi Okabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing same
- Publication number 20040241930
- Publication date Dec 2, 2004
- Yoshifumi Okabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing same
- Publication number 20040237327
- Publication date Dec 2, 2004
- Yoshifumi Okabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing same
- Publication number 20040036140
- Publication date Feb 26, 2004
- Yoshifumi Okabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing same
- Publication number 20030052366
- Publication date Mar 20, 2003
- Yoshifumi Okabe
- H01 - BASIC ELECTRIC ELEMENTS

Masami Yamaoka

Person

Patents Grantslast 30 patents

Semiconductor device and method of manufacturing same

Method of manufacturing a vertical semiconductor device

Power semiconductor device

Semiconductor device and method of manufacturing same

Semiconductor device that exhibits decreased contact resistance bet...

Method of manufacturing a vertical semiconductor device

Sputter-deposited nickel layer

Vertical type semiconductor device and gate structure

Vertical semiconductor device with ground surface providing a reduc...

Method of manufacturing a vertical semiconductor device with ground...

Semiconductor device including overvoltage protection diode

Method of forming electrodes of semiconductor device

High withstanding voltage transistor

Vertical type semiconductor device and method for producing the same

Method for making a polycrystalline diode having high breakdown

Semiconductor device and method of manufacturing same

Polycrystalline diode and a method for making the same

Structure and manufacturing method for thin-film semiconductor diod...

Power semiconductor apparatus

Semiconductor device with gradually varying doping levels to compen...

Semiconductor device constituting bipolar transistor

Semiconductor device with protective means against overheating

Method of manufacturing a DMOS

Semiconductor device with protective means against overheating

Semiconductor device

Semiconductor circuit device including an overvoltage protection el...

Patents Applicationslast 30 patents

Semiconductor device and method of manufacturing same

Semiconductor device and method of manufacturing same

Semiconductor device and method of manufacturing same

Semiconductor device and method of manufacturing same

Semiconductor device and method of manufacturing same