Masaru Zaitsu

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of topology-selective film formation of silicon oxide
- Patent number 11,637,011
- Issue date Apr 25, 2023
- ASM IP Holding B.V.
- Atsuki Fukazawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of topology-selective film formation of silicon oxide
- Patent number 11,127,589
- Issue date Sep 21, 2021
- ASM IP Holding B.V.
- Masaru Zaitsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming conformal silicon carbide film by cyclic CVD
- Patent number 10,847,365
- Issue date Nov 24, 2020
- ASM IP Holding B.V.
- Atsuki Fukazawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of atomic layer etching using hydrogen plasma
- Patent number 10,504,742
- Issue date Dec 10, 2019
- ASM IP Holding B.V.
- Masaru Zaitsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of subatmospheric plasma-enhanced ALD using capacitively cou...
- Patent number 10,435,790
- Issue date Oct 8, 2019
- ASM IP Holding B.V.
- Atsuki Fukazawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and apparatus for filling a gap
- Patent number 10,395,919
- Issue date Aug 27, 2019
- ASM IP Holding B.V.
- Zaitsu Masaru
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of reforming insulating film deposited on substrate with rec...
- Patent number 10,283,353
- Issue date May 7, 2019
- ASM IP Holding B.V.
- Akiko Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate processing apparatus and method of processing substrate
- Patent number 9,818,601
- Issue date Nov 14, 2017
- ASM IP Holding B.V.
- Masaki Tokunaga
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of cyclic dry etching using etchant film
- Patent number 9,793,135
- Issue date Oct 17, 2017
- ASM IP Holding B.V.
- Masaru Zaitsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of atomic layer etching using functional group-containing fl...
- Patent number 9,735,024
- Issue date Aug 15, 2017
- ASM IP Holding B.V.
- Masaru Zaitsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Continuous process incorporating atomic layer etching
- Patent number 9,627,221
- Issue date Apr 18, 2017
- ASM IP Holding B.V.
- Masaru Zaitsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming dielectric film in trenches by PEALD using H-con...
- Patent number 9,455,138
- Issue date Sep 27, 2016
- ASM IP Holding B.V.
- Atsuki Fukazawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF TOPOLOGY-SELECTIVE FILM FORMATION OF SILICON OXIDE
- Publication number 20210118667
- Publication date Apr 22, 2021
- ASM IP HOLDING B.V.
- Atsuki Fukazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF TOPOLOGY-SELECTIVE FILM FORMATION OF SILICON OXIDE
- Publication number 20200251328
- Publication date Aug 6, 2020
- ASM IP HOLDING B.V.
- Masaru Zaitsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING CONFORMAL SILICON CARBIDE FILM BY CYCLIC CVD
- Publication number 20200118815
- Publication date Apr 16, 2020
- ASM IP HOLDING B.V.
- Atsuki Fukazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPOSITING OXIDE FILM BY PEALD USING NITROGEN
- Publication number 20200111669
- Publication date Apr 9, 2020
- ASM IP HOLDING B.V.
- Masaru Zaitsu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF ATOMIC LAYER ETCHING USING HYDROGEN PLASMA
- Publication number 20180350620
- Publication date Dec 6, 2018
- ASM IP HOLDING B.V.
- Masaru Zaitsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF REFORMING INSULATING FILM DEPOSITED ON SUBSTRATE WITH REC...
- Publication number 20180286663
- Publication date Oct 4, 2018
- ASM IP HOLDING B.V.
- Akiko Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SUBATMOSPHERIC PLASMA-ENHANCED ALD USING CAPACITIVELY COU...
- Publication number 20180119283
- Publication date May 3, 2018
- ASM IP HOLDING B.V.
- Atsuki Fukazawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD AND APPARATUS FOR FILLING A GAP
- Publication number 20180033616
- Publication date Feb 1, 2018
- ASM IP HOLDING B.V.
- Zaitsu Masaru
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF ATOMIC LAYER ETCHING USING FUNCTIONAL GROUP-CONTAINING FL...
- Publication number 20170186621
- Publication date Jun 29, 2017
- ASM IP HOLDING B.V.
- Masaru Zaitsu
- H01 - BASIC ELECTRIC ELEMENTS

Masaru Zaitsu

Person

Patents Grantslast 30 patents

Method of topology-selective film formation of silicon oxide

Method of topology-selective film formation of silicon oxide

Method of forming conformal silicon carbide film by cyclic CVD

Method of atomic layer etching using hydrogen plasma

Method of subatmospheric plasma-enhanced ALD using capacitively cou...

Method and apparatus for filling a gap

Method of reforming insulating film deposited on substrate with rec...

Substrate processing apparatus and method of processing substrate

Method of cyclic dry etching using etchant film

Method of atomic layer etching using functional group-containing fl...

Continuous process incorporating atomic layer etching

Method for forming dielectric film in trenches by PEALD using H-con...

Patents Applicationslast 30 patents

METHOD OF TOPOLOGY-SELECTIVE FILM FORMATION OF SILICON OXIDE

METHOD OF TOPOLOGY-SELECTIVE FILM FORMATION OF SILICON OXIDE

METHOD OF FORMING CONFORMAL SILICON CARBIDE FILM BY CYCLIC CVD

METHOD FOR DEPOSITING OXIDE FILM BY PEALD USING NITROGEN

METHOD OF ATOMIC LAYER ETCHING USING HYDROGEN PLASMA

METHOD OF REFORMING INSULATING FILM DEPOSITED ON SUBSTRATE WITH REC...

METHOD OF SUBATMOSPHERIC PLASMA-ENHANCED ALD USING CAPACITIVELY COU...

METHOD AND APPARATUS FOR FILLING A GAP

METHOD OF ATOMIC LAYER ETCHING USING FUNCTIONAL GROUP-CONTAINING FL...