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Masataka Horai
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Kishima-gun, JP
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Patents Grants
last 30 patents
Information
Patent Grant
High-resistance silicon wafer and process for producing the same
Patent number
7,316,745
Issue date
Jan 8, 2008
Sumco Corporation
Shinsuke Sadamitsu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Silicon single crystal, silicon wafer, and epitaxial wafer
Patent number
6,878,451
Issue date
Apr 12, 2005
Sumitomo Mitsubishi Silicon Corporation
Eiichi Asayama
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
Method of manufacturing epitaxial wafer and method of producing sin...
Patent number
6,835,245
Issue date
Dec 28, 2004
Sumitomo Mitsubishi Silicon Corporation
Toshiaki Ono
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method of producing epitaxial wafers
Patent number
6,709,957
Issue date
Mar 23, 2004
Sumitomo Mitsubishi Silicon Corporation
Eiichi Asayama
C30 - CRYSTAL GROWTH
Information
Patent Grant
Silicon single crystal, silicon wafer, and epitaxial wafer.
Patent number
6,641,888
Issue date
Nov 4, 2003
Sumitomo Mitsubishi Silicon Corporation
Eiichi Asayama
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
Method for making a silicon single crystal wafer
Patent number
6,113,687
Issue date
Sep 5, 2000
Sumitomo Metal Industries, Ltd.
Masataka Horai
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method of annealing a semiconductor wafer in a hydrogen atmosphere...
Patent number
5,508,207
Issue date
Apr 16, 1996
Sumitomo Sitix Corporation
Masataka Horai
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
High-resistance silicon wafer and process for producing the same
Publication number
20050250349
Publication date
Nov 10, 2005
Sumitomo Mitsubishi Silicon Corporation
Shinsuke Sadamitsu
C30 - CRYSTAL GROWTH
Information
Patent Application
Method of making an epitaxial wafer
Publication number
20040216659
Publication date
Nov 4, 2004
Eiichi Asayama
C30 - CRYSTAL GROWTH
Information
Patent Application
Silicon single crystal, silicon wafer, and epitaxial wafer
Publication number
20030175532
Publication date
Sep 18, 2003
Sumitomo Metal Industries, Ltd.
Eiichi Asayama
C30 - CRYSTAL GROWTH
Information
Patent Application
Silicon wafer and epitaxial silicon wafer
Publication number
20030104222
Publication date
Jun 5, 2003
Toshiaki Ono
C30 - CRYSTAL GROWTH
Information
Patent Application
Method of producing epitaxial wafers
Publication number
20030008447
Publication date
Jan 9, 2003
Eiichi Asayama
C30 - CRYSTAL GROWTH
Information
Patent Application
Silicon single crystal, silicon wafer, and epitaxial wafer
Publication number
20020142171
Publication date
Oct 3, 2002
SUMITOMO METAL INDUSTRIES, LTD.
Eiichi Asayama
C30 - CRYSTAL GROWTH
Information
Patent Application
Silicon single crystal, silicon wafer, and epitaxial wafer
Publication number
20020142170
Publication date
Oct 3, 2002
SUMITOMO METAL INDUSTRIES, LTD.
Eiichi Asayama
C30 - CRYSTAL GROWTH
Information
Patent Application
Method of manufacturing epitaxial wafer and method of producing sin...
Publication number
20020017234
Publication date
Feb 14, 2002
Sumitomo Metal Industries, Ltd., Osaka-shi, Japan
Toshiaki Ono
C30 - CRYSTAL GROWTH