Michael C. Scott

Person

Colorado Springs, CO, US

People

Patents Grantslast 30 patents

Information Patent Grant
Metal polyoxyalkylated precursor solutions in an octane solvent and...
- Patent number 6,454,964
- Issue date Sep 24, 2002
- Symetrix Corporation
- Michael C. Scott
- C30 - CRYSTAL GROWTH
Information Patent Grant
Integrated circuit capacitors with barrier layer and process for ma...
- Patent number 6,447,838
- Issue date Sep 10, 2002
- Symetrix Corporation
- Masamichi Azuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barium strontium titanate integrated circuit capacitors and process...
- Patent number 6,372,286
- Issue date Apr 16, 2002
- Symetrix Corporation
- Masamichi Azuma
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thin film capacitors on gallium arsenide substrate
- Patent number 6,327,135
- Issue date Dec 4, 2001
- Masamichi Azuma
- C30 - CRYSTAL GROWTH
Information Patent Grant
Barium strontium titanate integrated circuit capacitors and process...
- Patent number 6,285,048
- Issue date Sep 4, 2001
- Symetrix Corporation
- Masamichi Azuma
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making metal polyoxyalkylated precursor solutions
- Patent number 6,174,564
- Issue date Jan 16, 2001
- Symetrix Corporation
- Michael C. Scott
- C30 - CRYSTAL GROWTH
Information Patent Grant
UV radiation process for making electronic devices having low-leaka...
- Patent number 6,133,050
- Issue date Oct 17, 2000
- Symetrix Corporation
- Masamichi Azuma
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making layered superlattice materials for ferroelectric,...
- Patent number 6,080,592
- Issue date Jun 27, 2000
- Symetrix Corporation
- Carlos A. Paz de Araujo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for fabricating layered superlattice materials and making e...
- Patent number 6,072,207
- Issue date Jun 6, 2000
- Symetrix Corporation
- Hiroyuki Yoshimori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Liquid deposition methods of fabricating layered superlattice mater...
- Patent number 6,056,994
- Issue date May 2, 2000
- Symetrix Corporation
- Carlos A. Paz de Araujo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thin films of ABO.sub.3 with excess A-site and B-site modifiers and...
- Patent number 6,025,619
- Issue date Feb 15, 2000
- Masamichi Azuma
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of fabricating an integrated circuit using self-patterned th...
- Patent number 6,022,669
- Issue date Feb 8, 2000
- Symetrix Corporation
- Hiroto Uchida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming magnesium oxide films on glass substrate for use...
- Patent number 6,017,579
- Issue date Jan 25, 2000
- Symetrix Corporation
- Gota Kano
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Grant
Electrical component having low-leakage current and low polarizatio...
- Patent number 5,909,042
- Issue date Jun 1, 1999
- Symetrix Corporation
- Masamichi Azuma
- C30 - CRYSTAL GROWTH
Information Patent Grant
UV radiation process for making electronic devices having low-leaka...
- Patent number 5,871,853
- Issue date Feb 16, 1999
- Symetrix Corporation
- Masamichi Azuma
- C30 - CRYSTAL GROWTH
Information Patent Grant
Liquid source formation of thin films using hexamethyl-disilazane
- Patent number 5,849,071
- Issue date Dec 15, 1998
- Symetrix Corporation
- Gary F. Derbenwick
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Liquid source formation of thin films using hexamethyl-disilazane
- Patent number 5,846,597
- Issue date Dec 8, 1998
- Symetrix Corporation
- Gary F. Derbenwick
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Liquid source formation of thin films using hexamethyl-disilazane
- Patent number 5,843,516
- Issue date Dec 1, 1998
- Symetrix Corporation
- Gary F. Derbenwick
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Process for fabricating layered superlattice materials and making e...
- Patent number 5,825,057
- Issue date Oct 20, 1998
- Symetrix Corporation
- Hitoshi Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thin films of ABO.sub.3 with excess B-site modifiers and method of...
- Patent number 5,814,849
- Issue date Sep 29, 1998
- Symetrix Corporation
- Masamichi Azuma
- C30 - CRYSTAL GROWTH
Information Patent Grant
Photosensitive liquid precursor solutions and use thereof in making...
- Patent number 5,792,592
- Issue date Aug 11, 1998
- Symetrix Corporation
- Hiroto Uchida
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Composition and process using ester solvents for fabricating metal...
- Patent number 5,788,757
- Issue date Aug 4, 1998
- Symetrix Corporation
- Hiroto Uchida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and apparatus for fabricating silicon dioxide and silicon gl...
- Patent number 5,759,923
- Issue date Jun 2, 1998
- Symetrix Corporation
- Larry D. McMillan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thin films of ABO.sub.3 with excess A-site and B-site modifiers and...
- Patent number 5,723,361
- Issue date Mar 3, 1998
- Symetrix Corporation
- Masamichi Azuma
- C30 - CRYSTAL GROWTH
Information Patent Grant
ZnO thin-film varistors and method of making the same
- Patent number 5,699,035
- Issue date Dec 16, 1997
- Symetrix Corporation
- Takeshi Ito
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thin films of ABO.sub.3 with excess B-site modifiers and method of...
- Patent number 5,690,727
- Issue date Nov 25, 1997
- Symetrix Corporation
- Masamichi Azuma
- C30 - CRYSTAL GROWTH
Information Patent Grant
Misted deposition method of fabricating layered superlattice materials
- Patent number 5,688,565
- Issue date Nov 18, 1997
- Symetrix Corporation
- Larry D. McMillan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Precursors and processes for making metal oxides
- Patent number 5,654,456
- Issue date Aug 5, 1997
- Symetrix Corporation
- Michael C. Scott
- C30 - CRYSTAL GROWTH
Information Patent Grant
Chemical vapor deposition process for fabricating layered superlatt...
- Patent number 5,648,114
- Issue date Jul 15, 1997
- Symetrix Corporation
- Carlos A. Paz De Araujo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of forming ABO.sub.3 films with excess B-site modifiers
- Patent number 5,624,707
- Issue date Apr 29, 1997
- Symetrix Corporation
- Masamichi Azuma
- C30 - CRYSTAL GROWTH

Michael C. Scott

Person

Patents Grantslast 30 patents

Metal polyoxyalkylated precursor solutions in an octane solvent and...

Integrated circuit capacitors with barrier layer and process for ma...

Barium strontium titanate integrated circuit capacitors and process...

Thin film capacitors on gallium arsenide substrate

Barium strontium titanate integrated circuit capacitors and process...

Method of making metal polyoxyalkylated precursor solutions

UV radiation process for making electronic devices having low-leaka...

Method of making layered superlattice materials for ferroelectric,...

Process for fabricating layered superlattice materials and making e...

Liquid deposition methods of fabricating layered superlattice mater...

Thin films of ABO.sub.3 with excess A-site and B-site modifiers and...

Method of fabricating an integrated circuit using self-patterned th...

Method of forming magnesium oxide films on glass substrate for use...

Electrical component having low-leakage current and low polarizatio...

UV radiation process for making electronic devices having low-leaka...

Liquid source formation of thin films using hexamethyl-disilazane

Liquid source formation of thin films using hexamethyl-disilazane

Liquid source formation of thin films using hexamethyl-disilazane

Process for fabricating layered superlattice materials and making e...

Thin films of ABO.sub.3 with excess B-site modifiers and method of...

Photosensitive liquid precursor solutions and use thereof in making...

Composition and process using ester solvents for fabricating metal...

Method and apparatus for fabricating silicon dioxide and silicon gl...

Thin films of ABO.sub.3 with excess A-site and B-site modifiers and...

ZnO thin-film varistors and method of making the same

Thin films of ABO.sub.3 with excess B-site modifiers and method of...

Misted deposition method of fabricating layered superlattice materials

Precursors and processes for making metal oxides

Chemical vapor deposition process for fabricating layered superlatt...

Method of forming ABO.sub.3 films with excess B-site modifiers