Ming Ta Lin

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
System and methods for providing fast cacheable access to a key-val...
- Patent number 12,197,388
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Vikas Sinha
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Tone classification for physical channels with multiplexed data
- Patent number 11,595,177
- Issue date Feb 28, 2023
- QUALCOMM Incorporated
- Ming Ta Lin
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
System and methods for providing fast cacheable access to a key-val...
- Patent number 11,301,422
- Issue date Apr 12, 2022
- Samsung Electronics Co., Ltd.
- Vikas Sinha
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Error detection for a wireless channel
- Patent number 11,152,953
- Issue date Oct 19, 2021
- QUALCOMM Incorporated
- Afshin Haftbaradaran
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Low-latency lightweight distributed storage system
- Patent number 10,503,409
- Issue date Dec 10, 2019
- Alibaba Group Holding Limited
- Shu Li
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Unified control for digital timing recovery and packet processing
- Patent number 9,246,668
- Issue date Jan 26, 2016
- Marvell International Ltd.
- Mao Yu
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Parallel processing of both code synchronization and frequency sync...
- Patent number 9,107,153
- Issue date Aug 11, 2015
- Marvell International Ltd.
- Ming Lin
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Double and triple gate MOSFET devices and methods for making same
- Patent number 8,580,660
- Issue date Nov 12, 2013
- Advanced Micro Devices, Inc.
- Ming-Ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained fully depleted silicon on insulator semiconductor device
- Patent number 8,502,283
- Issue date Aug 6, 2013
- GLOBALFOUNDRIES Inc.
- Qi Xiang
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of forming finned semiconductor devices with trench isolation
- Patent number 8,431,466
- Issue date Apr 30, 2013
- Advanced Micro Devices, Inc.
- Ming-ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and methods for detection of interface in radio-frequency...
- Patent number 8,406,719
- Issue date Mar 26, 2013
- Marvell International Ltd.
- Sek Kin Neng
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Double and triple gate MOSFET devices and methods for making same
- Patent number 8,222,680
- Issue date Jul 17, 2012
- Advanced Micro Devices, Inc.
- Ming-Ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and methods for detection of interface in radio-frequency...
- Patent number 8,180,308
- Issue date May 15, 2012
- Marvell International Ltd.
- Sek Kin Neng
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Fully silicided gate structure for FinFET devices
- Patent number 8,008,136
- Issue date Aug 30, 2011
- Advanced Micro Devices, Inc.
- Ming-Ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming finned semiconductor devices with trench isolation
- Patent number 7,994,020
- Issue date Aug 9, 2011
- Advanced Micro Devices, Inc.
- Ming-ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming fin structures using a sacrificial etch stop laye...
- Patent number 7,871,873
- Issue date Jan 18, 2011
- Global Foundries Inc.
- Witold Maszara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming isolation regions for integrated circuits
- Patent number 7,713,834
- Issue date May 11, 2010
- GLOBALFOUNDRIES Inc.
- Haihong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tensile strained substrate
- Patent number 7,701,019
- Issue date Apr 20, 2010
- Advanced Micro Devices, Inc.
- Minh V. Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation process
- Patent number 7,648,886
- Issue date Jan 19, 2010
- GLOBALFOUNDRIES Inc.
- Minh-Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reversed T-shaped finfet
- Patent number 7,541,267
- Issue date Jun 2, 2009
- Advanced Micro Devices, Inc.
- Haihong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for forming multiple fin structures using metal...
- Patent number 7,498,225
- Issue date Mar 3, 2009
- Advanced Micro Devices, Inc.
- Haihong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming isolation regions for integrated circuits
- Patent number 7,422,961
- Issue date Sep 9, 2008
- Advanced Micro Devices, Inc.
- Haihong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped structure for finfet devices
- Patent number 7,416,925
- Issue date Aug 26, 2008
- Advanced Micro Devices, Inc.
- Ming-Ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating a semiconductor device, which include selec...
- Patent number 7,329,582
- Issue date Feb 12, 2008
- Advanced Micro Devices, Inc.
- James Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained fully depleted silicon on insulator semiconductor device a...
- Patent number 7,306,997
- Issue date Dec 11, 2007
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reversed T-shaped FinFET
- Patent number 7,250,645
- Issue date Jul 31, 2007
- Advanced Micro Devices, Inc.
- Haihong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heat removal in SOI devices using a buried oxide layer/conductive l...
- Patent number 7,238,591
- Issue date Jul 3, 2007
- Advanced Micro Devices, Inc.
- Ming-Ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for doping structures in FinFET devices
- Patent number 7,235,436
- Issue date Jun 26, 2007
- Advanced Micro Devices, Inc.
- Ming-Ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped structure for FinFET devices
- Patent number 7,196,374
- Issue date Mar 27, 2007
- Advanced Micro Devices, Inc.
- Ming-Ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory device
- Patent number 7,196,372
- Issue date Mar 27, 2007
- Spansion LLC
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SYSTEM AND METHODS FOR PROVIDING FAST CACHEABLE ACCESS TO A KEY-VAL...
- Publication number 20220300456
- Publication date Sep 22, 2022
- Samsung Electronics Co., Ltd.
- Vikas SINHA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TONE CLASSIFICATION FOR PHYSICAL CHANNELS WITH MULTIPLEXED DATA
- Publication number 20220140976
- Publication date May 5, 2022
- QUALCOMM Incorporated
- Ming Ta Lin
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
ERROR DETECTION FOR A WIRELESS CHANNEL
- Publication number 20210273651
- Publication date Sep 2, 2021
- QUALCOMM Incorporated
- Afshin Haftbaradaran
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Error Correction in GPS Signal
- Publication number 20200209406
- Publication date Jul 2, 2020
- ALIBABA GROUP HOLDING LIMITED
- Ming Lin
- G01 - MEASURING TESTING
Information Patent Application
LOW-LATENCY LIGHTWEIGHT DISTRIBUTED STORAGE SYSTEM
- Publication number 20190095106
- Publication date Mar 28, 2019
- ALIBABA GROUP HOLDING LIMITED
- Shu Li
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SYSTEM AND METHODS FOR PROVIDING FAST CACHEABLE ACCESS TO A KEY-VAL...
- Publication number 20170242867
- Publication date Aug 24, 2017
- Vikas SINHA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DOUBLE AND TRIPLE GATE MOSFET DEVICES AND METHODS FOR MAKING SAME
- Publication number 20120252193
- Publication date Oct 4, 2012
- Advanced Micro Devices, Inc.
- Ming-Ren LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING FINNED SEMICONDUCTOR DEVICES WITH TRENCH ISOLATION
- Publication number 20110263094
- Publication date Oct 27, 2011
- Advanced Micro Devices, Inc.
- Ming-ren LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING FIN STRUCTURES USING A SACRIFICIAL ETCH STOP LAYE...
- Publication number 20100248454
- Publication date Sep 30, 2010
- Advanced Micro Devices, Inc.
- Witold MASZARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING FINNED SEMICONDUCTOR DEVICES WITH TRENCH ISOLATION
- Publication number 20100015778
- Publication date Jan 21, 2010
- Advanced Micro Devices, Inc.
- Ming-ren LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING ISOLATION REGIONS FOR INTEGRATED CIRCUITS
- Publication number 20090047770
- Publication date Feb 19, 2009
- Advanced Micro Devices, Inc.
- Haihong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED FULLY DEPLETED SILICON ON INSULATOR SEMICONDUCTOR DEVICE
- Publication number 20080054316
- Publication date Mar 6, 2008
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED STRUCTURE FOR FINFET DEVICES
- Publication number 20070141791
- Publication date Jun 21, 2007
- Advanced Micro Devices, Inc.
- Ming-Ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FULLY SILICIDED GATE STRUCTURE FOR FINFET DEVICES
- Publication number 20060177998
- Publication date Aug 10, 2006
- Harrity & Snyder, L.L.P.
- Ming-Ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tensile strained substrate
- Publication number 20060138479
- Publication date Jun 29, 2006
- Advanced Micro Devices, Inc.
- Minh V. Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained fully depleted silicon on insulator semiconductor device a...
- Publication number 20060099752
- Publication date May 11, 2006
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual-metal CMOS transistors with tunable gate electrode work functi...
- Publication number 20050245016
- Publication date Nov 3, 2005
- Advanced Micro Devices, Inc.
- James Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming structures in finfet devices
- Publication number 20040198031
- Publication date Oct 7, 2004
- Ming-Ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shallow trench isolation for strained silicon processes
- Publication number 20040180509
- Publication date Sep 16, 2004
- Advanced Micro Devices, Inc.
- Haihong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor with tensile strained substrate and method of making...
- Publication number 20040142545
- Publication date Jul 22, 2004
- Advanced Micro Devices, Inc.
- Minh V. Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shallow trench isolation for strained silicon processes
- Publication number 20040137742
- Publication date Jul 15, 2004
- Advanced Micro Devices, Inc.
- Minh-Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Two transistor nor device
- Publication number 20040100306
- Publication date May 27, 2004
- Zoran Krivokapic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double and triple gate MOSFET devices and methods for making same
- Publication number 20040075122
- Publication date Apr 22, 2004
- Ming-Ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Finfet having improved carrier mobility and method of its formation
- Publication number 20040061178
- Publication date Apr 1, 2004
- Advanced Micro Devices Inc
- Ming-Ren Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mosfets incorporating nickel germanosilicided gate and methods for...
- Publication number 20040061191
- Publication date Apr 1, 2004
- Advanced Micro Devices, Inc.
- Eric N. Paton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K GATE DIELECTRIC PROCESS WITH SELF ALIGNED DAMASCENE CONTACT...
- Publication number 20010053594
- Publication date Dec 20, 2001
- QI XIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF GATE DOPING BY ION IMPLANTATION
- Publication number 20010030349
- Publication date Oct 18, 2001
- MING-REN LIN
- H01 - BASIC ELECTRIC ELEMENTS

Ming Ta Lin

Person

Patents Grantslast 30 patents

System and methods for providing fast cacheable access to a key-val...

Tone classification for physical channels with multiplexed data

System and methods for providing fast cacheable access to a key-val...

Error detection for a wireless channel

Low-latency lightweight distributed storage system

Unified control for digital timing recovery and packet processing

Parallel processing of both code synchronization and frequency sync...

Double and triple gate MOSFET devices and methods for making same

Strained fully depleted silicon on insulator semiconductor device

Method of forming finned semiconductor devices with trench isolation

Apparatus and methods for detection of interface in radio-frequency...

Double and triple gate MOSFET devices and methods for making same

Apparatus and methods for detection of interface in radio-frequency...

Fully silicided gate structure for FinFET devices

Method of forming finned semiconductor devices with trench isolation

Method of forming fin structures using a sacrificial etch stop laye...

Method of forming isolation regions for integrated circuits

Tensile strained substrate

Shallow trench isolation process

Reversed T-shaped finfet

Systems and methods for forming multiple fin structures using metal...

Method of forming isolation regions for integrated circuits

Doped structure for finfet devices

Methods for fabricating a semiconductor device, which include selec...

Strained fully depleted silicon on insulator semiconductor device a...

Reversed T-shaped FinFET

Heat removal in SOI devices using a buried oxide layer/conductive l...

Method for doping structures in FinFET devices

Doped structure for FinFET devices

Flash memory device

Patents Applicationslast 30 patents

SYSTEM AND METHODS FOR PROVIDING FAST CACHEABLE ACCESS TO A KEY-VAL...

TONE CLASSIFICATION FOR PHYSICAL CHANNELS WITH MULTIPLEXED DATA

ERROR DETECTION FOR A WIRELESS CHANNEL

Error Correction in GPS Signal

LOW-LATENCY LIGHTWEIGHT DISTRIBUTED STORAGE SYSTEM

SYSTEM AND METHODS FOR PROVIDING FAST CACHEABLE ACCESS TO A KEY-VAL...

DOUBLE AND TRIPLE GATE MOSFET DEVICES AND METHODS FOR MAKING SAME

METHOD OF FORMING FINNED SEMICONDUCTOR DEVICES WITH TRENCH ISOLATION

METHOD OF FORMING FIN STRUCTURES USING A SACRIFICIAL ETCH STOP LAYE...

METHOD OF FORMING FINNED SEMICONDUCTOR DEVICES WITH TRENCH ISOLATION

METHOD OF FORMING ISOLATION REGIONS FOR INTEGRATED CIRCUITS

STRAINED FULLY DEPLETED SILICON ON INSULATOR SEMICONDUCTOR DEVICE

DOPED STRUCTURE FOR FINFET DEVICES

FULLY SILICIDED GATE STRUCTURE FOR FINFET DEVICES

Tensile strained substrate

Strained fully depleted silicon on insulator semiconductor device a...

Dual-metal CMOS transistors with tunable gate electrode work functi...

Method for forming structures in finfet devices

Shallow trench isolation for strained silicon processes

Semiconductor with tensile strained substrate and method of making...

Shallow trench isolation for strained silicon processes

Two transistor nor device

Double and triple gate MOSFET devices and methods for making same

Finfet having improved carrier mobility and method of its formation

Mosfets incorporating nickel germanosilicided gate and methods for...

HIGH-K GATE DIELECTRIC PROCESS WITH SELF ALIGNED DAMASCENE CONTACT...

METHOD OF GATE DOPING BY ION IMPLANTATION