Narbeh Derhacobian

Person

Belmont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods of operating integrated circuit devices having volatile and...
- Patent number 10,446,747
- Issue date Oct 15, 2019
- Adesto Technology Corporation
- Narbeh Derhacobian
- G11 - INFORMATION STORAGE
Information Patent Grant
Read operations and circuits for memory devices having programmable...
- Patent number 9,570,166
- Issue date Feb 14, 2017
- Adesto Technologies Corporation
- Nad Edward Gilbert
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable impedance element circuits and methods
- Patent number 9,159,414
- Issue date Oct 13, 2015
- Adesto Technologies Corporation
- Narbeh Derhacobian
- G11 - INFORMATION STORAGE
Information Patent Grant
Application of relaxation voltage pulses to programmble impedance e...
- Patent number 9,007,814
- Issue date Apr 14, 2015
- Adesto Technologies Corporation
- Narbeh Derhacobian
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells, devices and method with dynamic storage elements and...
- Patent number 8,995,173
- Issue date Mar 31, 2015
- Adesto Technologies Corporation
- Narbeh Derhacobian
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuits and methods having programmable impedance elements
- Patent number 8,947,913
- Issue date Feb 3, 2015
- Adesto Technologies Corporation
- Narbeh Derhacobian
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Read operations and circuits for memory devices having programmable...
- Patent number 8,913,444
- Issue date Dec 16, 2014
- Adesto Technologies Corporation
- Nad Edward Gilbert
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-terminal phase change devices
- Patent number 8,822,967
- Issue date Sep 2, 2014
- Agate Logic, Inc.
- Louis Charles Kordus
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuits having programmable impedance elements
- Patent number 8,687,403
- Issue date Apr 1, 2014
- Adesto Technologies Corporation
- Narbeh Derhacobian
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit devices and systems having programmable impedanc...
- Patent number 8,675,396
- Issue date Mar 18, 2014
- Adesto Technologies Corporation
- Narbeh Derhacobian
- G11 - INFORMATION STORAGE
Information Patent Grant
PMC-based non-volatile CAM
- Patent number 8,659,926
- Issue date Feb 25, 2014
- Adesto Technologies Corporation
- Narbeh Derhacobian
- G11 - INFORMATION STORAGE
Information Patent Grant
Reconfigurable memory arrays having programmable impedance elements...
- Patent number 8,331,128
- Issue date Dec 11, 2012
- Adesto Technologies Corporation
- Narbeh Derhacobian
- G11 - INFORMATION STORAGE
Information Patent Grant
PMC-based non-volatile CAM
- Patent number 8,320,148
- Issue date Nov 27, 2012
- Adesto Technologies Corporation
- Narbeh Derhacobian
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable impedance element circuits and methods
- Patent number 8,294,488
- Issue date Oct 23, 2012
- Adesto Technologies Corporation
- Narbeh Derhacobian
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-terminal phase change devices
- Patent number 8,183,551
- Issue date May 22, 2012
- Agale Logic, Inc.
- Louis Charles Kordus, II
- G11 - INFORMATION STORAGE
Information Patent Grant
Reconfigurable logic structures
- Patent number 7,755,389
- Issue date Jul 13, 2010
- Agate Logic, Inc.
- Colin Neal Murphy
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrically-alterable non-volatile memory cell
- Patent number 7,095,076
- Issue date Aug 22, 2006
- Virage Logic Corporation
- Kim-Kwong Michael Han
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrically-alterable non-volatile memory cell
- Patent number 6,788,574
- Issue date Sep 7, 2004
- Virage Logic Corporation
- Kim-Kwong Michael Han
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory cell with a nitridated oxide layer
- Patent number 6,750,157
- Issue date Jun 15, 2004
- Advanced Micro Devices, Inc.
- Richard M. Fastow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of programming a non-volatile memory cell using a baking pro...
- Patent number 6,618,290
- Issue date Sep 9, 2003
- Advanced Micro Devices, Inc.
- Janet S. Y. Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Higher program VT and faster programming rates based on improved er...
- Patent number 6,590,811
- Issue date Jul 8, 2003
- Advanced Micro Devices, Inc.
- Darlene G. Hamilton
- G11 - INFORMATION STORAGE
Information Patent Grant
Charge injection
- Patent number 6,567,303
- Issue date May 20, 2003
- Advanced Micro Devices, Inc.
- Darlene G. Hamilton
- G11 - INFORMATION STORAGE
Information Patent Grant
Simultaneous formation of charge storage and bitline to wordline is...
- Patent number 6,555,436
- Issue date Apr 29, 2003
- Advanced Micro Devices, Inc.
- Mark T. Ramsbey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using a negative gate erase voltage applied in steps of decreasing...
- Patent number 6,549,466
- Issue date Apr 15, 2003
- Advanced Micro Devices, Inc.
- Narbeh Derhacobian
- G11 - INFORMATION STORAGE
Information Patent Grant
Planar structure for non-volatile memory devices
- Patent number 6,541,816
- Issue date Apr 1, 2003
- Advanced Micro Devices, Inc.
- Mark T. Ramsbey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NAND array structure and method with buried layer
- Patent number 6,529,410
- Issue date Mar 4, 2003
- Advanced Micro Devices, Inc.
- Michael Han
- G11 - INFORMATION STORAGE
Information Patent Grant
Using hot carrier injection to control over-programming in a non-vo...
- Patent number 6,519,182
- Issue date Feb 11, 2003
- Advanced Micro Devices, Inc.
- Narbeh Derhacobian
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing high voltage transistor with modified field...
- Patent number 6,514,830
- Issue date Feb 4, 2003
- Advanced Micro Devices, Inc.
- Hao Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using a low drain bias during erase verify to ensure complete remov...
- Patent number 6,501,681
- Issue date Dec 31, 2002
- Advanced Micro Devices, Inc.
- Michael Van Buskirk
- G11 - INFORMATION STORAGE
Information Patent Grant
Single bit array edges
- Patent number 6,493,261
- Issue date Dec 10, 2002
- Advanced Micro Devices, Inc.
- Darlene G. Hamilton
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Multi-Terminal Phase Change Devices
- Publication number 20120182794
- Publication date Jul 19, 2012
- Agate Logic Inc.
- Louis Charles Kordus, II
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
RECONFIGURABLE LOGIC STRUCTURES
- Publication number 20090134910
- Publication date May 28, 2009
- Cswitch Corp., a California Corporation
- Colin Neal Murphy
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Methods for Fabricating Multi-Terminal Phase Change Devices
- Publication number 20080206922
- Publication date Aug 28, 2008
- Antonietta Oliva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and apparatus for programming phase change devices
- Publication number 20080025080
- Publication date Jan 31, 2008
- CSWITCH Corporation
- Vei-Han Chan
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-terminal phase change devices
- Publication number 20070235707
- Publication date Oct 11, 2007
- Louis Charles Kordus
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Reconfigurable logic structures
- Publication number 20070146012
- Publication date Jun 28, 2007
- Cswitch Corp. a California Corporation
- Colin Neal Murphy
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Multi-terminal phase change devices
- Publication number 20070096071
- Publication date May 3, 2007
- CSWITCH Corporation
- Louis Charles Kordus
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Content-addressable memory having phase change material devices
- Publication number 20070097740
- Publication date May 3, 2007
- Cswitch Corp., a California Corporation
- Narbeh Derhacobian
- G11 - INFORMATION STORAGE
Information Patent Application
Methods for fabricating multi-terminal phase change devices
- Publication number 20070099405
- Publication date May 3, 2007
- CSWITCH Corporation
- Antonietta Oliva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Simultaneous formation of charge storage and bitline to wordline is...
- Publication number 20020192910
- Publication date Dec 19, 2002
- Mark T. Ramsbey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGHER PROGRAM VT AND FASTER PROGRAMMING RATES BASED ON IMPROVED ER...
- Publication number 20020159293
- Publication date Oct 31, 2002
- Darlene G. Hamilton
- G11 - INFORMATION STORAGE
Information Patent Application
Planar structure for non-volatile memory devices
- Publication number 20020063277
- Publication date May 30, 2002
- Mark T. Ramsbey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for reducing processing steps when fabricating a flash memor...
- Publication number 20020031888
- Publication date Mar 14, 2002
- Hao Fang
- H01 - BASIC ELECTRIC ELEMENTS

Narbeh Derhacobian

Person

Patents Grantslast 30 patents

Methods of operating integrated circuit devices having volatile and...

Read operations and circuits for memory devices having programmable...

Programmable impedance element circuits and methods

Application of relaxation voltage pulses to programmble impedance e...

Memory cells, devices and method with dynamic storage elements and...

Circuits and methods having programmable impedance elements

Read operations and circuits for memory devices having programmable...

Multi-terminal phase change devices

Circuits having programmable impedance elements

Integrated circuit devices and systems having programmable impedanc...

PMC-based non-volatile CAM

Reconfigurable memory arrays having programmable impedance elements...

PMC-based non-volatile CAM

Programmable impedance element circuits and methods

Multi-terminal phase change devices

Reconfigurable logic structures

Electrically-alterable non-volatile memory cell

Electrically-alterable non-volatile memory cell

Nonvolatile memory cell with a nitridated oxide layer

Method of programming a non-volatile memory cell using a baking pro...

Higher program VT and faster programming rates based on improved er...

Charge injection

Simultaneous formation of charge storage and bitline to wordline is...

Using a negative gate erase voltage applied in steps of decreasing...

Planar structure for non-volatile memory devices

NAND array structure and method with buried layer

Using hot carrier injection to control over-programming in a non-vo...

Method of manufacturing high voltage transistor with modified field...

Using a low drain bias during erase verify to ensure complete remov...

Single bit array edges

Patents Applicationslast 30 patents

Multi-Terminal Phase Change Devices

RECONFIGURABLE LOGIC STRUCTURES

Methods for Fabricating Multi-Terminal Phase Change Devices

Method and apparatus for programming phase change devices

Multi-terminal phase change devices

Reconfigurable logic structures

Multi-terminal phase change devices

Content-addressable memory having phase change material devices

Methods for fabricating multi-terminal phase change devices

Simultaneous formation of charge storage and bitline to wordline is...

HIGHER PROGRAM VT AND FASTER PROGRAMMING RATES BASED ON IMPROVED ER...

Planar structure for non-volatile memory devices

Method for reducing processing steps when fabricating a flash memor...