Natividad Vasquez JR.

Person

San Francisco, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Resistive switching memory devices and method(s) for forming the re...
- Patent number 12,075,712
- Issue date Aug 27, 2024
- Crossbar, Inc.
- Sundar Narayanan
Information Patent Grant
Resistive switching memory having confined filament formation and m...
- Patent number 11,997,932
- Issue date May 28, 2024
- Crossbar, Inc.
- Sundar Narayanan
Information Patent Grant
Using aluminum as etch stop layer
- Patent number 11,944,020
- Issue date Mar 26, 2024
- Crossbar, Inc.
- Sundar Narayanan
Information Patent Grant
Using aluminum as etch stop layer
- Patent number 10,873,023
- Issue date Dec 22, 2020
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory stack liner comprising dielectric block layer material
- Patent number 10,749,110
- Issue date Aug 18, 2020
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Liner layer for dielectric block layer
- Patent number 10,522,754
- Issue date Dec 31, 2019
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrative resistive memory in backend metal layers
- Patent number 10,319,908
- Issue date Jun 11, 2019
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scalable silicon based resistive memory device
- Patent number 10,290,801
- Issue date May 14, 2019
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device for a non-volatile (NV) resistive memory and a...
- Patent number 10,192,927
- Issue date Jan 29, 2019
- Crossbar, Inc.
- Mark Harold Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed high voltage metal oxide semiconductor transistor for RRAM...
- Patent number 10,115,819
- Issue date Oct 30, 2018
- Crossbar, Inc.
- Harry Yue Gee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithically integrated resistive memory using integrated-circuit...
- Patent number 10,096,653
- Issue date Oct 9, 2018
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flatness of memory cell surfaces
- Patent number 10,062,845
- Issue date Aug 28, 2018
- Crossbar, Inc.
- Harry Yue Gee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithically integrated resistive memory using integrated-circuit...
- Patent number 9,741,765
- Issue date Aug 22, 2017
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-oxide interface layer for two-terminal memory
- Patent number 9,601,690
- Issue date Mar 21, 2017
- Crossbar, Inc.
- Harry Yue Gee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory (RRAM) cell and method for forming t...
- Patent number 9,595,670
- Issue date Mar 14, 2017
- Crossbar, Inc.
- Harry Yue Gee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating resistive memory device switching material...
- Patent number 9,583,701
- Issue date Feb 28, 2017
- Crossbar, Inc.
- Harry Yue Gee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mitigating damage from a chemical mechanical planarization process
- Patent number 9,437,814
- Issue date Sep 6, 2016
- Crossbar, Inc.
- Harry Yue Gee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for surface roughness reduction after silicon germanium thin...
- Patent number 9,425,046
- Issue date Aug 23, 2016
- Crossbar, Inc.
- Harry Yue Gee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scalable RRAM device architecture for a non-volatile memory device...
- Patent number 9,412,790
- Issue date Aug 9, 2016
- Crossbar, Inc.
- Mark Harold Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-oxide interface layer for two-terminal memory
- Patent number 9,166,163
- Issue date Oct 20, 2015
- Crossbar, Inc.
- Harry Yue Gee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barrier structure for a silver based RRAM and method
- Patent number 8,946,667
- Issue date Feb 3, 2015
- Crossbar, Inc.
- Mark Harold Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective removal method and structure of silver in resistive switc...
- Patent number 8,716,098
- Issue date May 6, 2014
- Crossbar, Inc.
- Scott Brad Herner
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
RESISTIVE SWITCHING MEMORY DEVICES AND METHOD(S) FOR FORMING THE RE...
- Publication number 20220320429
- Publication date Oct 6, 2022
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE SWITCHING MEMORY HAVING CONFINED FILAMENT FORMATION AND M...
- Publication number 20220320432
- Publication date Oct 6, 2022
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USING ALUMINUM AS ETCH STOP LAYER
- Publication number 20210151671
- Publication date May 20, 2021
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LINER LAYER FOR DIELECTRIC BLOCK LAYER
- Publication number 20170365780
- Publication date Dec 21, 2017
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USING ALUMINUM AS ETCH STOP LAYER
- Publication number 20170288139
- Publication date Oct 5, 2017
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED HIGH VOLTAGE METAL OXIDE SEMICONDUCTOR TRANSISTOR FOR RRAM...
- Publication number 20160351625
- Publication date Dec 1, 2016
- Crossbar, Inc.
- Harry Yue Gee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATIVE RESISTIVE MEMORY IN BACKEND METAL LAYERS
- Publication number 20150318333
- Publication date Nov 5, 2015
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHICALLY INTEGRATED RESISTIVE MEMORY USING INTEGRATED-CIRCUIT...
- Publication number 20150243886
- Publication date Aug 27, 2015
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALABLE SILICON BASED RESISTIVE MEMORY DEVICE
- Publication number 20150228893
- Publication date Aug 13, 2015
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUB-OXIDE INTERFACE LAYER FOR TWO-TERMINAL MEMORY
- Publication number 20140145135
- Publication date May 29, 2014
- Crossbar, Inc.
- Harry Yue GEE
- H01 - BASIC ELECTRIC ELEMENTS

Natividad Vasquez JR.

Person

Patents Grantslast 30 patents

Resistive switching memory devices and method(s) for forming the re...

Resistive switching memory having confined filament formation and m...

Using aluminum as etch stop layer

Using aluminum as etch stop layer

Memory stack liner comprising dielectric block layer material

Liner layer for dielectric block layer

Integrative resistive memory in backend metal layers

Scalable silicon based resistive memory device

Semiconductor device for a non-volatile (NV) resistive memory and a...

Recessed high voltage metal oxide semiconductor transistor for RRAM...

Monolithically integrated resistive memory using integrated-circuit...

Flatness of memory cell surfaces

Monolithically integrated resistive memory using integrated-circuit...

Sub-oxide interface layer for two-terminal memory

Resistive random access memory (RRAM) cell and method for forming t...

Methods for fabricating resistive memory device switching material...

Mitigating damage from a chemical mechanical planarization process

Method for surface roughness reduction after silicon germanium thin...

Scalable RRAM device architecture for a non-volatile memory device...

Sub-oxide interface layer for two-terminal memory

Barrier structure for a silver based RRAM and method

Selective removal method and structure of silver in resistive switc...

Patents Applicationslast 30 patents

RESISTIVE SWITCHING MEMORY DEVICES AND METHOD(S) FOR FORMING THE RE...

RESISTIVE SWITCHING MEMORY HAVING CONFINED FILAMENT FORMATION AND M...

USING ALUMINUM AS ETCH STOP LAYER

LINER LAYER FOR DIELECTRIC BLOCK LAYER

USING ALUMINUM AS ETCH STOP LAYER

RECESSED HIGH VOLTAGE METAL OXIDE SEMICONDUCTOR TRANSISTOR FOR RRAM...

INTEGRATIVE RESISTIVE MEMORY IN BACKEND METAL LAYERS

MONOLITHICALLY INTEGRATED RESISTIVE MEMORY USING INTEGRATED-CIRCUIT...

SCALABLE SILICON BASED RESISTIVE MEMORY DEVICE

SUB-OXIDE INTERFACE LAYER FOR TWO-TERMINAL MEMORY