Panda Siddhartha

Person

Beacon, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Field effect device with reduced thickness gate
- Patent number 8,492,803
- Issue date Jul 23, 2013
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for post silicide spacer removal
- Patent number 7,977,185
- Issue date Jul 12, 2011
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a cross-section hourglass shaped channel region f...
- Patent number 7,863,197
- Issue date Jan 4, 2011
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure having low and high performance devi...
- Patent number 7,776,695
- Issue date Aug 17, 2010
- International Business Machines Corporation
- John C. Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to increase strain enhancement with spacerless FET and dual...
- Patent number 7,709,317
- Issue date May 4, 2010
- International Business Machines Corporation
- Haining S. Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stressed field effect transistors on hybrid orientation substrate
- Patent number 7,687,829
- Issue date Mar 30, 2010
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for making strained channel field effect trans...
- Patent number 7,645,656
- Issue date Jan 12, 2010
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of processing wafers with resonant heating
- Patent number 7,645,356
- Issue date Jan 12, 2010
- International Business Machines Corporation
- Siddhartha Panda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect device with reduced thickness gate
- Patent number 7,459,382
- Issue date Dec 2, 2008
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to engineer etch profiles in Si substrate for advanced semic...
- Patent number 7,442,618
- Issue date Oct 28, 2008
- Chartered Semiconductor Manufacturing, Ltd.
- Yung Fu Chong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for shielding a wafer from charged particles d...
- Patent number 7,438,822
- Issue date Oct 21, 2008
- International Business Machines Corporation
- Hongwen Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stressed field effect transistors on hybrid orientation substrate
- Patent number 7,405,436
- Issue date Jul 29, 2008
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for multilayer photoresist dry development
- Patent number 7,344,991
- Issue date Mar 18, 2008
- Tokyo Electron Limited
- Vaidyanathan Balasubramaniam
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Grant
Silicon nitride etching methods
- Patent number 7,288,482
- Issue date Oct 30, 2007
- International Business Machines Corporation
- Siddhartha Panda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Endpoint detection for the patterning of layered materials
- Patent number 7,285,775
- Issue date Oct 23, 2007
- International Business Machines Corporation
- Michael R. Sievers
- G01 - MEASURING TESTING
Information Patent Grant
Gas filled reactive atomic force microscope probe
- Patent number 7,278,300
- Issue date Oct 9, 2007
- International Business Machines Corporation
- Michael R. Sievers
- G01 - MEASURING TESTING
Information Patent Grant
Non-destructive in-situ elemental profiling
- Patent number 7,256,399
- Issue date Aug 14, 2007
- International Business Machines Corporation
- Siddhartha Panda
- G01 - MEASURING TESTING
Information Patent Grant
Silicon precursors for deep trench silicon etch processes
- Patent number 7,186,660
- Issue date Mar 6, 2007
- International Business Machines Corporation
- Siddhartha Panda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In situ doped embedded sige extension and source/drain for enhanced...
- Patent number 7,176,481
- Issue date Feb 13, 2007
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for making strained channel field effect trans...
- Patent number 7,135,724
- Issue date Nov 14, 2006
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of controlled sublithographic structures
- Patent number 7,087,532
- Issue date Aug 8, 2006
- International Business Machines Corporation
- David M Dobuzinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for making heterojunction bipolar transistor h...
- Patent number 6,982,442
- Issue date Jan 3, 2006
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of improving etch uniformity in deep silicon etching
- Patent number 6,806,200
- Issue date Oct 19, 2004
- International Business Machines Corporation
- David Dobuzinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of etching high aspect ratio openings
- Patent number 6,743,727
- Issue date Jun 1, 2004
- International Business Machines Corporation
- Gangadhara S. Mathad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to increase the etch rate and depth in high aspect ratio str...
- Patent number 6,709,917
- Issue date Mar 23, 2004
- International Business Machines Corporation
- Siddhartha Panda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of trench sidewall enhancement
- Patent number 6,706,586
- Issue date Mar 16, 2004
- International Business Machines Corporation
- Christophe N. Collins
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD TO INCREASE STRAIN ENHANCEMENT WITH SPACERLESS FET AND DUAL...
- Publication number 20100187636
- Publication date Jul 29, 2010
- International Business Machines Corporation
- Haining S. Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT DEVICE WITH REDUCED THICKNESS GATE
- Publication number 20090159934
- Publication date Jun 25, 2009
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-SECTION HOURGLASS SHAPED CHANNEL REGION FOR CHARGE CARRIER MO...
- Publication number 20080258180
- Publication date Oct 23, 2008
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESSED FIELD EFFECT TRANSISTORS ON HYBRID ORIENTATION SUBSTRATE
- Publication number 20080251817
- Publication date Oct 16, 2008
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD OF MANUFACTURING A STRAINED FinFET WITH STRESS...
- Publication number 20080173942
- Publication date Jul 24, 2008
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING ISOLATION REGION WITH VARIABLE LI...
- Publication number 20070293016
- Publication date Dec 20, 2007
- International Business Machines Corporation
- Zhijiong Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT DEVICE WITH REDUCED THICKNESS GATE
- Publication number 20070221964
- Publication date Sep 27, 2007
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE HAVING LOW AND HIGH PERFORMANCE DEVI...
- Publication number 20070158753
- Publication date Jul 12, 2007
- International Business Machines Corporation
- John C. Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR POST SILICIDE SPACER REMOVAL
- Publication number 20070161244
- Publication date Jul 12, 2007
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO INCREASE STRAIN ENHANCEMENT WITH SPACERLESS...
- Publication number 20070108525
- Publication date May 17, 2007
- International Business Machines Corporation
- Haining S. Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS FILLED REACTIVE ATOMIC FORCE MICROSCOPE PROBE
- Publication number 20070068234
- Publication date Mar 29, 2007
- International Business Machines Corporation
- Michael R. Sievers
- G01 - MEASURING TESTING
Information Patent Application
POLYSILICON ETCHING METHODS
- Publication number 20070056930
- Publication date Mar 15, 2007
- International Business Machines Corporation
- Seiji Iseda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR POST-RIE PASSIVATION OF SEMICONDUCTOR SURFACES FOR EPITA...
- Publication number 20070048980
- Publication date Mar 1, 2007
- International Business Machines Corporation
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to engineer etch profiles in Si substrate for advanced semic...
- Publication number 20070020861
- Publication date Jan 25, 2007
- Chartered Semiconductor MFG LTD and 2) IBM
- Yung Fu Chong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR MAKING STRAINED CHANNEL FIELD EFFECT TRANS...
- Publication number 20060292779
- Publication date Dec 28, 2006
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON NITRIDE ETCHING METHODS
- Publication number 20060252269
- Publication date Nov 9, 2006
- International Business Machines Corporation
- Siddhartha Panda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-DESTRUCTIVE IN-SITU ELEMENTAL PROFILING
- Publication number 20060227321
- Publication date Oct 12, 2006
- International Business Machines Corporation
- Siddhartha Panda
- G01 - MEASURING TESTING
Information Patent Application
METHOD AND APPARATUS FOR PRECISE TEMPERATURE CYCLING IN CHEMICAL/BI...
- Publication number 20060154280
- Publication date Jul 13, 2006
- International Business Machines Corporation
- Siddhartha Panda
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
IN SITU DOPED EMBEDDED SIGE EXTENSION AND SOURCE/DRAIN FOR ENHANCED...
- Publication number 20060151837
- Publication date Jul 13, 2006
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stressed field effect transistors on hybrid orientation substrate
- Publication number 20060145264
- Publication date Jul 6, 2006
- Internaional Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENDPOINT DETECTION FOR THE PATTERNING OF LAYERED MATERIALS
- Publication number 20060118718
- Publication date Jun 8, 2006
- Michael R. Sievers
- G01 - MEASURING TESTING
Information Patent Application
STRUCTURE AND METHOD FOR MAKING STRAINED CHANNEL FIELD EFFECT TRANS...
- Publication number 20060065914
- Publication date Mar 30, 2006
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of Controlled Sublithographic Structures
- Publication number 20060068596
- Publication date Mar 30, 2006
- International Business Machines Corporation
- David M. Dobuzinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus and method for shielding a wafer from charged particles d...
- Publication number 20060037940
- Publication date Feb 23, 2006
- Hongwen Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR PRECISE TEMPERATURE CYCLING IN CHEMICAL/BI...
- Publication number 20050244933
- Publication date Nov 3, 2005
- International Business Machines Corporation
- Siddhartha Panda
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
STRUCTURE AND METHOD OF MAKING HETEROJUNCTION BIPOLAR TRANSISTOR HA...
- Publication number 20050151165
- Publication date Jul 14, 2005
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and apparatus for etching an organic layer
- Publication number 20050136666
- Publication date Jun 23, 2005
- TOKYO ELECTRON LIMITED
- Vaidyanathan Balasubramaniam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of processing wafers with resonant heating
- Publication number 20050112900
- Publication date May 26, 2005
- Siddhartha Panda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and system for deep trench silicon etch
- Publication number 20040256353
- Publication date Dec 23, 2004
- TOKYO ELECTRON LIMITED
- Siddhartha Panda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and apparatus for multilayer photoresist dry development
- Publication number 20040180269
- Publication date Sep 16, 2004
- TOKYO ELECTRON LIMITED
- Vaidyanathan Balasubramaniam
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE

Panda Siddhartha

Person

Patents Grantslast 30 patents

Field effect device with reduced thickness gate

Method and apparatus for post silicide spacer removal

Method of forming a cross-section hourglass shaped channel region f...

Semiconductor device structure having low and high performance devi...

Method to increase strain enhancement with spacerless FET and dual...

Stressed field effect transistors on hybrid orientation substrate

Structure and method for making strained channel field effect trans...

Method of processing wafers with resonant heating

Field effect device with reduced thickness gate

Method to engineer etch profiles in Si substrate for advanced semic...

Apparatus and method for shielding a wafer from charged particles d...

Stressed field effect transistors on hybrid orientation substrate

Method and apparatus for multilayer photoresist dry development

Silicon nitride etching methods

Endpoint detection for the patterning of layered materials

Gas filled reactive atomic force microscope probe

Non-destructive in-situ elemental profiling

Silicon precursors for deep trench silicon etch processes

In situ doped embedded sige extension and source/drain for enhanced...

Structure and method for making strained channel field effect trans...

Formation of controlled sublithographic structures

Structure and method for making heterojunction bipolar transistor h...

Method of improving etch uniformity in deep silicon etching

Method of etching high aspect ratio openings

Method to increase the etch rate and depth in high aspect ratio str...

Method of trench sidewall enhancement

Patents Applicationslast 30 patents

METHOD TO INCREASE STRAIN ENHANCEMENT WITH SPACERLESS FET AND DUAL...

FIELD EFFECT DEVICE WITH REDUCED THICKNESS GATE

CROSS-SECTION HOURGLASS SHAPED CHANNEL REGION FOR CHARGE CARRIER MO...

STRESSED FIELD EFFECT TRANSISTORS ON HYBRID ORIENTATION SUBSTRATE

STRUCTURE AND METHOD OF MANUFACTURING A STRAINED FinFET WITH STRESS...

SEMICONDUCTOR STRUCTURE INCLUDING ISOLATION REGION WITH VARIABLE LI...

FIELD EFFECT DEVICE WITH REDUCED THICKNESS GATE

SEMICONDUCTOR DEVICE STRUCTURE HAVING LOW AND HIGH PERFORMANCE DEVI...

METHOD AND APPARATUS FOR POST SILICIDE SPACER REMOVAL

STRUCTURE AND METHOD TO INCREASE STRAIN ENHANCEMENT WITH SPACERLESS...

GAS FILLED REACTIVE ATOMIC FORCE MICROSCOPE PROBE

POLYSILICON ETCHING METHODS

METHOD FOR POST-RIE PASSIVATION OF SEMICONDUCTOR SURFACES FOR EPITA...

Method to engineer etch profiles in Si substrate for advanced semic...

STRUCTURE AND METHOD FOR MAKING STRAINED CHANNEL FIELD EFFECT TRANS...

SILICON NITRIDE ETCHING METHODS

NON-DESTRUCTIVE IN-SITU ELEMENTAL PROFILING

METHOD AND APPARATUS FOR PRECISE TEMPERATURE CYCLING IN CHEMICAL/BI...

IN SITU DOPED EMBEDDED SIGE EXTENSION AND SOURCE/DRAIN FOR ENHANCED...

Stressed field effect transistors on hybrid orientation substrate

ENDPOINT DETECTION FOR THE PATTERNING OF LAYERED MATERIALS

STRUCTURE AND METHOD FOR MAKING STRAINED CHANNEL FIELD EFFECT TRANS...

Formation of Controlled Sublithographic Structures

Apparatus and method for shielding a wafer from charged particles d...

METHOD AND APPARATUS FOR PRECISE TEMPERATURE CYCLING IN CHEMICAL/BI...

STRUCTURE AND METHOD OF MAKING HETEROJUNCTION BIPOLAR TRANSISTOR HA...

Method and apparatus for etching an organic layer

Method of processing wafers with resonant heating

Method and system for deep trench silicon etch

Method and apparatus for multilayer photoresist dry development