Paolo Cappelletti

Person

Milan, IT

People

Patents Grantslast 30 patents

Information Patent Grant
Phase-change memory cell
- Patent number 12,114,580
- Issue date Oct 8, 2024
- Paolo Giuseppe Cappelletti
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase-change memory cell
- Patent number 11,653,579
- Issue date May 16, 2023
- Paolo Giuseppe Cappelletti
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device
- Patent number 11,641,786
- Issue date May 2, 2023
- Commissariat a l'Energie Atomique et aux Energies
- Paolo Giuseppe Cappelletti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 11,355,702
- Issue date Jun 7, 2022
- STMicroelectronics S.r.l.
- Paolo Giuseppe Cappelletti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell
- Patent number 11,227,992
- Issue date Jan 18, 2022
- STMicroelectronics S.r.l.
- Paolo Giuseppe Cappelletti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 10,910,558
- Issue date Feb 2, 2021
- STMicroelectronics S.R.L.
- Paolo Giuseppe Cappelletti
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor constructions and methods of forming memory cells
- Patent number 9,577,188
- Issue date Feb 21, 2017
- Micron Technology, Inc.
- Carmela Cupeta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor constructions and methods of forming memory cells
- Patent number 9,166,159
- Issue date Oct 20, 2015
- Micron Technology, Inc.
- Carmela Cupeta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation for a memory
- Patent number 8,963,220
- Issue date Feb 24, 2015
- Micron Technology, Inc.
- Alessandro Grossi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation for a memory
- Patent number 8,664,702
- Issue date Mar 4, 2014
- Micron Technology, Inc.
- Alessandro Grossi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation for a memory
- Patent number 8,546,856
- Issue date Oct 1, 2013
- Micron Technology, Inc.
- Alessandro Grossi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation for a memory
- Patent number 8,097,506
- Issue date Jan 17, 2012
- Micron Technology, Inc.
- Alessandro Grossi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure with high input impedance and high current cap...
- Patent number 7,560,782
- Issue date Jul 14, 2009
- Fabio Pellizzer
- G11 - INFORMATION STORAGE
Information Patent Grant
Manufacturing method for non-active electrically structures in orde...
- Patent number 7,320,904
- Issue date Jan 22, 2008
- STMicroelectronics S.r.l.
- Paolo Giuseppe Cappelletti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Analysis of the quality of contacts and vias in multi-metal fabrica...
- Patent number 7,304,485
- Issue date Dec 4, 2007
- STMicroelectronics S.r.l.
- Paolo Cappelletti
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory cell with plural read transistors
- Patent number 7,012,832
- Issue date Mar 14, 2006
- Western Digital (Fremont), Inc.
- Kyusik Sin
- G11 - INFORMATION STORAGE
Information Patent Grant
Manufacturing method for non-active electrically structures in orde...
- Patent number 7,001,800
- Issue date Feb 21, 2006
- STMicroelectronics S.r.l.
- Paolo Giuseppe Cappelletti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Test structure for the measurement of contact to gate distance in n...
- Patent number 6,903,995
- Issue date Jun 7, 2005
- STMicroelectronics S.r.l.
- Emilio Camerlenghi
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrically erasable and programmable non-volatile memory cell
- Patent number 6,876,033
- Issue date Apr 5, 2005
- STMicroelectronics S.r.l.
- Paolo Cappelletti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making floating gate non-volatile memory cell with low er...
- Patent number 6,841,445
- Issue date Jan 11, 2005
- SGS-Thomson Microelectronics S.r.l.
- Paolo Cappelletti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for integrating in a same chip a non-volatile memory and a...
- Patent number 6,713,347
- Issue date Mar 30, 2004
- STMicroelectronics S.r.l.
- Paolo Giuseppe Cappelletti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making floating gate non-volatile memory cell with low er...
- Patent number 6,710,394
- Issue date Mar 23, 2004
- SGS-Thomson Microelectronics S.r.l.
- Paolo Cappelletti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
EEPROM type non-volatile memory cell and corresponding production m...
- Patent number 6,576,950
- Issue date Jun 10, 2003
- STMicroelectronics S.r.l.
- Paolo Cappelletti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile semiconductor memory capable of selectively erasing a p...
- Patent number 6,532,171
- Issue date Mar 11, 2003
- STMicroelectronics S.r.l.
- Roberto Gastaldi
- G11 - INFORMATION STORAGE
Information Patent Grant
Process for integrating in a same chip a non-volatile memory and a...
- Patent number 6,410,387
- Issue date Jun 25, 2002
- STMicroelectronics, SRL
- Paolo Giuseppe Cappelletti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory cell with a single level of polysilicon, in par...
- Patent number 6,410,389
- Issue date Jun 25, 2002
- STMicroelectronics S.r.l.
- Paolo Cappelletti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making floating gate non-volatile memory cell with low er...
- Patent number 6,399,444
- Issue date Jun 4, 2002
- SGS-Thomson Microelectronics S.r.l.
- Paolo Cappelletti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic memory device having bit lines with block selector switches
- Patent number 6,284,585
- Issue date Sep 4, 2001
- STMicroelectronics S.r.l.
- Emilio Camerlenghi
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-test and correction of loss of charge errors in a flash memory...
- Patent number 6,275,960
- Issue date Aug 14, 2001
- STMicroelectronics S.r.l.
- Paolo Cappelletti
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
EEPROM memory cell with a single level of polysilicon programmable...
- Patent number RE37308
- Issue date Aug 7, 2001
- STMicroelectronics S.r.l.
- Paolo G. Cappelletti
- 257 - Active solid-state devices

Patents Applicationslast 30 patents

Information Patent Application
PHASE-CHANGE MEMORY CELL
- Publication number 20230389450
- Publication date Nov 30, 2023
- STMicroelectronics S.r.l.
- Paolo Giuseppe CAPPELLETTI
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MEMORY
- Publication number 20230032898
- Publication date Feb 2, 2023
- STMicroelectronics S.r.l
- Paolo Giuseppe CAPPELLETTI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE
- Publication number 20220302379
- Publication date Sep 22, 2022
- COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES
- Paolo Giuseppe CAPPELLETTI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING CELL
- Publication number 20220238603
- Publication date Jul 28, 2022
- STMicroelectronics S.r.l
- Paolo Giuseppe CAPPELLETTI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY CELL
- Publication number 20210249594
- Publication date Aug 12, 2021
- STMicroelectronics S.r.l.
- Paolo Giuseppe CAPPELLETTI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL
- Publication number 20200381618
- Publication date Dec 3, 2020
- STMicroelectronics S.r.l
- Paolo Giuseppe CAPPELLETTI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20200052199
- Publication date Feb 13, 2020
- STMicroelectronics S.r.l
- Paolo Giuseppe CAPPELLETTI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE
- Publication number 20200052198
- Publication date Feb 13, 2020
- STMicroelectronics S.r.l
- Paolo Giuseppe CAPPELLETTI
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Constructions and Methods of Forming Memory Cells
- Publication number 20160056375
- Publication date Feb 25, 2016
- Micron Technology, Inc.
- Carmela Cupeta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Constructions and Methods of Forming Memory Cells
- Publication number 20140346429
- Publication date Nov 27, 2014
- Carmela Cupeta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION FOR A MEMORY
- Publication number 20140027834
- Publication date Jan 30, 2014
- Micron Technology, Inc.
- Alessandro Grossi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shallow Trench Isolation For A Memory
- Publication number 20100155804
- Publication date Jun 24, 2010
- Alessandro Grossi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR MANUFACTURING AN ARRAY OF CELLS INCLUDING SELECTION BIP...
- Publication number 20090014709
- Publication date Jan 15, 2009
- STMicroelectronics S.r.l.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor structure with high input impedance and high current cap...
- Publication number 20070126064
- Publication date Jun 7, 2007
- STMicroelectronics S.r. I.
- Fabio Pellizzer
- G11 - INFORMATION STORAGE
Information Patent Application
Manufacturing method for non-active electrically structures in orde...
- Publication number 20060189136
- Publication date Aug 24, 2006
- STMicroelectronics S.r.l.
- Paolo Giuseppe Cappelletti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing method for non-active electrically structures in orde...
- Publication number 20050032278
- Publication date Feb 10, 2005
- STMicroelectronics S.r.l.
- Paolo Giuseppe Cappelletti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Analysis of the quality of contacts and vias in multi-metal fabrica...
- Publication number 20040268275
- Publication date Dec 30, 2004
- STMicroelectronics S.r. I.
- Paolo Cappelletti
- G01 - MEASURING TESTING
Information Patent Application
Method of making floating gate non-volatile memory cell with low er...
- Publication number 20040173840
- Publication date Sep 9, 2004
- SGS-THOMSON MICROELECTRONICS S.R.L.
- Paolo Cappelletti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrically erasable and programmable non-volatile memory cell
- Publication number 20040061168
- Publication date Apr 1, 2004
- STMicroelectronics S.r. I.
- Paolo Cappelletti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Test structure for the measurement of contact to gate distance in n...
- Publication number 20030235097
- Publication date Dec 25, 2003
- STMicroelectronics S.r.I.
- Emilio Camerlenghi
- G11 - INFORMATION STORAGE
Information Patent Application
Method of making floating gate non-volatile memory cell with low er...
- Publication number 20020140021
- Publication date Oct 3, 2002
- SGS-THOMSON MICROELECTRONICS S.R.L.
- Paolo Cappelletti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for integrating in a same chip a non-volatile memory and a...
- Publication number 20020140047
- Publication date Oct 3, 2002
- STMicroelectronics S.r. I.
- Paolo Giuseppe Cappelletti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor memory
- Publication number 20020041534
- Publication date Apr 11, 2002
- STMicroelectronics S.r.l.
- Roberto Gastaldi
- G11 - INFORMATION STORAGE

Paolo Cappelletti

Person

Patents Grantslast 30 patents

Phase-change memory cell

Phase-change memory cell

Memory device

Memory device

Memory cell

Memory device

Semiconductor constructions and methods of forming memory cells

Semiconductor constructions and methods of forming memory cells

Shallow trench isolation for a memory

Shallow trench isolation for a memory

Shallow trench isolation for a memory

Shallow trench isolation for a memory

Transistor structure with high input impedance and high current cap...

Manufacturing method for non-active electrically structures in orde...

Analysis of the quality of contacts and vias in multi-metal fabrica...

Magnetic memory cell with plural read transistors

Manufacturing method for non-active electrically structures in orde...

Test structure for the measurement of contact to gate distance in n...

Electrically erasable and programmable non-volatile memory cell

Method of making floating gate non-volatile memory cell with low er...

Process for integrating in a same chip a non-volatile memory and a...

Method of making floating gate non-volatile memory cell with low er...

EEPROM type non-volatile memory cell and corresponding production m...

Nonvolatile semiconductor memory capable of selectively erasing a p...

Process for integrating in a same chip a non-volatile memory and a...

Non-volatile memory cell with a single level of polysilicon, in par...

Method of making floating gate non-volatile memory cell with low er...

Electronic memory device having bit lines with block selector switches

Self-test and correction of loss of charge errors in a flash memory...

EEPROM memory cell with a single level of polysilicon programmable...

Patents Applicationslast 30 patents

PHASE-CHANGE MEMORY CELL

PHASE CHANGE MEMORY

MEMORY DEVICE

SWITCHING CELL

PHASE-CHANGE MEMORY CELL

MEMORY CELL

MEMORY DEVICE

MEMORY DEVICE

Semiconductor Constructions and Methods of Forming Memory Cells

Semiconductor Constructions and Methods of Forming Memory Cells

SHALLOW TRENCH ISOLATION FOR A MEMORY

Shallow Trench Isolation For A Memory

PROCESS FOR MANUFACTURING AN ARRAY OF CELLS INCLUDING SELECTION BIP...

Transistor structure with high input impedance and high current cap...

Manufacturing method for non-active electrically structures in orde...

Manufacturing method for non-active electrically structures in orde...

Analysis of the quality of contacts and vias in multi-metal fabrica...

Method of making floating gate non-volatile memory cell with low er...

Electrically erasable and programmable non-volatile memory cell

Test structure for the measurement of contact to gate distance in n...

Method of making floating gate non-volatile memory cell with low er...

Process for integrating in a same chip a non-volatile memory and a...

Semiconductor memory