Paul J.-M. Tsang

Person

Poughkeepsie, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Dual phase and hybrid phase shifting mask fabrication using a surfa...
- Patent number 5,465,859
- Issue date Nov 14, 1995
- International Business Machines Corporation
- Jonathan D. Chapple-Sokol
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Fabrication and laser deletion of microfuses
- Patent number 5,374,590
- Issue date Dec 20, 1994
- International Business Machines Corporation
- Kerry L. Batdorf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and fabrication of SiCr microfuses
- Patent number 5,340,775
- Issue date Aug 23, 1994
- International Business Machines Corporation
- Roy A. Carruthers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiCr microfuses
- Patent number 5,285,099
- Issue date Feb 8, 1994
- International Business Machines Corporation
- Roy A. Carruthers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inverse T-gate FET transistor with lightly doped source and drain r...
- Patent number 5,241,203
- Issue date Aug 31, 1993
- International Business Machines Corporation
- Louis L. Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an inverse T-gate FET transistor
- Patent number 5,120,668
- Issue date Jun 9, 1992
- IBM Corporation
- Louis L. Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of making BiCMOS devices having closely spaced device regions
- Patent number 5,015,594
- Issue date May 14, 1991
- International Business Machines Corporation
- Shao-Fu S. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of dielectrically isolated integrated circuit devices
- Patent number 4,960,717
- Issue date Oct 2, 1990
- International Business Machines Corporation
- Victor J. Silvestri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective epitaxial growth structure and isolation
- Patent number 4,908,691
- Issue date Mar 13, 1990
- International Business Machines Corporation
- Victor J. Silvestri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective epitaxial growth structure and isolation
- Patent number 4,728,624
- Issue date Mar 1, 1988
- International Business Machines Corporation
- Victor J. Silvestri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication methods for high performance lateral bipolar transistors
- Patent number 4,583,106
- Issue date Apr 15, 1986
- International Business Machines Corporation
- Narasipur G. Anantha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication methods for high performance lateral bipolar transistors
- Patent number 4,546,536
- Issue date Oct 15, 1985
- International Business Machines Corporation
- Narasipur G. Anantha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a lateral PNP transistor
- Patent number 4,510,676
- Issue date Apr 16, 1985
- International Business Machines, Corporation
- Narasipur G. Anantha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for making high performance lateral bipolar transistors
- Patent number 4,492,008
- Issue date Jan 8, 1985
- International Business Machines Corporation
- Narasipur G. Anantha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing field effect transistors
- Patent number 4,442,589
- Issue date Apr 17, 1984
- International Business Machines Corporation
- Ven Y. Doo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication process of sub-micrometer channel length MOSFETs
- Patent number 4,419,809
- Issue date Dec 13, 1983
- International Business Machines Corporation
- Jacob Riseman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of bit lines for ram device
- Patent number 4,403,394
- Issue date Sep 13, 1983
- International Business Machines Corporation
- Joseph F. Shepard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor
- Patent number 4,392,149
- Issue date Jul 5, 1983
- International Business Machines Corporation
- Cheng T. Horng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an MOS dynamic RAM with lightly doped drain
- Patent number 4,366,613
- Issue date Jan 4, 1983
- IBM Corporation
- Seiki Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating improved bipolar transistor utilizing selec...
- Patent number 4,309,812
- Issue date Jan 12, 1982
- International Business Machines Corporation
- Cheng T. Horng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming monocrystalline silicon carbide on silicon subs...
- Patent number 4,028,149
- Issue date Jun 7, 1977
- IBM Corporation
- John L. Deines
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming recessed regions of thermally oxidized silicon a...
- Patent number 3,998,674
- Issue date Dec 21, 1976
- International Business Machines Corporation
- Donald P. Cameron
- H01 - BASIC ELECTRIC ELEMENTS

Paul J.-M. Tsang

Person

Patents Grantslast 30 patents

Dual phase and hybrid phase shifting mask fabrication using a surfa...

Fabrication and laser deletion of microfuses

Structure and fabrication of SiCr microfuses

SiCr microfuses

Inverse T-gate FET transistor with lightly doped source and drain r...

Method of forming an inverse T-gate FET transistor

Process of making BiCMOS devices having closely spaced device regions

Fabrication of dielectrically isolated integrated circuit devices

Selective epitaxial growth structure and isolation

Selective epitaxial growth structure and isolation

Fabrication methods for high performance lateral bipolar transistors

Fabrication methods for high performance lateral bipolar transistors

Method of fabricating a lateral PNP transistor

Methods for making high performance lateral bipolar transistors

Method for manufacturing field effect transistors

Fabrication process of sub-micrometer channel length MOSFETs

Formation of bit lines for ram device

Bipolar transistor

Method of fabricating an MOS dynamic RAM with lightly doped drain

Process for fabricating improved bipolar transistor utilizing selec...

Process for forming monocrystalline silicon carbide on silicon subs...

Method for forming recessed regions of thermally oxidized silicon a...